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EE 290D Nanoscale Fabrication: Prof. Chang-Hasnain 9/2/04

This document outlines lecture notes from EE 290D Nanoscale Fabrication taught by Prof. Chang-Hasnain on 9/2/04. It discusses the analysis of semiconductor materials using the time-independent Schrodinger equation and models like the Kronig-Penney model to determine energy band structures. It also covers crystal structures of common semiconductors and how the tight binding and Bloch approximations can provide solutions for energy bands in solids.

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José Raúl Espinoza
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76 views

EE 290D Nanoscale Fabrication: Prof. Chang-Hasnain 9/2/04

This document outlines lecture notes from EE 290D Nanoscale Fabrication taught by Prof. Chang-Hasnain on 9/2/04. It discusses the analysis of semiconductor materials using the time-independent Schrodinger equation and models like the Kronig-Penney model to determine energy band structures. It also covers crystal structures of common semiconductors and how the tight binding and Bloch approximations can provide solutions for energy bands in solids.

Uploaded by

José Raúl Espinoza
Copyright
© Attribution Non-Commercial (BY-NC)
Available Formats
Download as PDF, TXT or read online on Scribd
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EE 290D Nanoscale Fabrication

Prof. Chang-Hasnain 9/2/04

Analysis Flow
Semiconductor with a certain crystal structure Time-independent Schrodinger Equation Kronig-Penney Model Doping density, Temp, etc. Tight-binding Approx. Energy Band Structure E-k diagram Density of States D(E) Fermi-Dirac Distribution x Electrical, Optical, Thermal Properties
2

Effective mass

Wave functions

Electron and Hole densities, n, p


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EE 290D Nanoscale Fabrication; Prof. Chang-Hasnain

Crystal Structures
Simple Cubic Diamond structure:

Si, Ge, Sn Face centered cubic (fcc)

Zincblend

Cu, Al, Cu, Ni, Sr, Rh, Pd, Ag, Ce, Tb, Ir, Pt, Au, Pb, Th 9/2/2004

ZnS, AgI, AlAs, AlP, AlSb, BAs, BN, BP, CdS, GaAs, GaP, GaSb, HgS, HgSe, HgTe, INAs, InP, MnS, MnSe, SiC, ZnSe, ZnTe 3

EE 290D Nanoscale Fabrication; Prof. Chang-Hasnain

Time-Independent Schrodinger Wave Equation


Based on
Wave particle duality Conservation of energy

+
2

2m
2

( E V ) = 0

Discrete set of solutions


Only certain energies are allowed. The spectrum is discrete, not continuous.

Particle in a box
Lowest energy is not zero.

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EE 290D Nanoscale Fabrication; Prof. Chang-Hasnain

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EE 290D Nanoscale Fabrication; Prof. Chang-Hasnain

Energy Band of Solids


Origin of Bandgap

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EE 290D Nanoscale Fabrication; Prof. Chang-Hasnain

Origin of Bands

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EE 290D Nanoscale Fabrication; Prof. Chang-Hasnain

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EE 290D Nanoscale Fabrication; Prof. Chang-Hasnain

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EE 290D Nanoscale Fabrication; Prof. Chang-Hasnain

Kronig-Penney Model
Solutions for an electron in a single square well discrete energy levels Solutions for an electron in a chain of periodic square wells? Actual lattice potential experienced by conduction electrons: a weak potential periodic in lattice spacing a

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Bloch Theorem
Bloch Theorem
(r,k)=u(r,k) exp(ikr) u(r+c)=u(r)

Tight binding approximation


( x, k ) = ua ( x nc) eiknc

Free electron approximation


( x, k ) = ( B0 + Bm eimGx )eikx
m

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Solution for Tight Binding Approximation

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Essence of the Solutions


V0 infinite infinite well; each electron is confined to En = 2ma 2 a single atom 2 2 k V0 infinite free electron E= Discontinuities at the 2m boundaries of allowed states n energy gap (band gap, k= forbidden gap) a Total number of states in a band: 2N
N is number of primitive cells in a solid
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2 2 n2

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