Solids and Crystals

1. The nature of binding for a crystal with alternate and evenly spaced
positive and negative ions is [CBSE PMT 2000]
(a) Covalent (b) Metallic
(c) Dipolar (d) Ionic
2. For a crystal system, a = b = c,  =  =   90 , the system is
o
[BHU 2000]
(a) Tetragonal system (b) Cubic system
(c) Orthorhombic system (d) Rhombohedral system
3. Biaxial crystal among the following is [Pb. CET 1998]
(a) Calcite (b) Quartz
(c) Selenite (d) Tourmaline
4. The temperature coefficient of resistance of a conductor is
[AFMC 1998]
(a) Positive always (b) Negative always
(c) Zero (d) Infinite
5. Potassium has a bcc structure with nearest neighbour distance 4.525
Å. Its molecular weight is 39. Its density in kg/m is 3
[DCE 1997]
(a) 900 (b) 494
(c) 602 (d) 802
6. The expected energy of the electrons at absolute zero is called [RPET 1996]
(a) Fermi energy (b) Emission energy
(c) Work function (d) Potential energy
7. In a triclinic crystal system [EAMCET (Med.) 1995]
(a) ab c ,     (b) a  b  c ,     
(c) a b c ,     (d) a  b  c ,     
8. Metallic solids are always opaque because [AFMC 1994]
(a) Solids effect the incident light
(b) Incident light is readily absorbed by the free electron in a metal
(c) Incident light is scattered by solid molecules
(d) Energy band traps the incident light
9. In which of the following ionic bond is present
[EAMCET (Med.) 1994]
(a) NaCl (b) Ar
(c) Si (d) Ge
10. Which of the following materials is non crystalline
[CBSE PMT 1993]
(a) Copper (b) Sodium chloride
(c) Wood (d) Diamond
 Electronics 1557

11. The coordination number of Cu is [AMU 1992]

(a) 1 (b) 6
(c) 8 (d) 12 (a) Zero (b) ke 2 / a 2
12. Which one of the following is the weakest kind of bonding in solids[CBSE PMT 1992; KCET 1992]
(a) Ionic (b) Metallic (c) ke 2 a 2 (d) Data is incomplete
(c) Vander Waals (d) Covalent 23. Sodium has body centred packing. If the distance between two
nearest atoms is 3.7 Å, then its lattice parameter is
13. In a crystal, the atoms are located at the position of
[AMU 1985] [Pb. PET 2002]
(a) Maximum potential energy (a) 4.8 Å (b) 4.3 Å
(b) Minimum potential energy (c) 3.9 Å (d) 3.3 Å
(c) Zero potential energy
24. Which of the following is an amorphous solid
(d) Infinite potential energy
[AIIMS 2005; J & K CET 2004]
14. Crystal structure of NaCl is [NCERT 1982]
(a) Glass (b) Diamond
(a) Fcc (b) Bcc
(c) Salt (d) Sugar
(c) Both of the above (d) None of the above
15. What is the coordination number of sodium ions in the case of 25. Copper has face centered cubic (fcc) lattice with interatomic spacing
sodium chloride structure [CBSE PMT 1988] equal to 2.54Å. The value of the lattice constant for this lattice is [CBSE

(a) 6 (b) 8 (a) 1.27 Å (b) 5.08 Å

(c) 4 (d) 12 (c) 2.54 Å (d) 3.59 Å
16. The distance between the body centred atom and a corner atom in 26. In good conductors of electricity, the type of bonding that exists is [CBSE
sodium (a = 4.225 Å) is [CBSE PMT 1995]
(a) Ionic (b) Vander Waals
(a) 3.66 Å (b) 3.17 Å
(c) Covalent (d) Metallic
(c) 2.99 Å (d) 2.54 Å
27. Bonding in a germanium crystal (semi- conductor) is
17. A solid that transmits light in visible region and has a very low
melting point possesses [J & K CET 2001] [CPMT 1986; KCET 1992; EAMCET (Med.) 1995;
(a) Metallic bonding (b) Ionic bonding MP PET/PMT 2004]
(c) Covalent bonding (d) Vander Waal’s bonding (a) Metallic (b) Ionic
18. Atomic radius of fcc is [J & K CET 2001] (c) Vander Waal's type (d) Covalent
a a 28. The ionic bond is absent in [J & K CET 2005]
(a) (b)
2 2 2 (a) NaCl (b) CsCl

3 3 (c) LiF (d) H O 2

(c) a (d) a
4 2
19. A solid reflects incident light and it’s electrical conductivity Semiconductors
decreases with temperature. The binding in this solids
(a) Ionic (b) Covalent 1. The majority charge carriers in P-type semiconductor are
(c) Metallic (d) Molecular [MP PMT 1999; CBSE PMT 1999;
20. The laptop PC’s modern electronic watches and calculators use the MP PET 1991; MP PET/PMT 1998; MH CET 2003 ]
following for display (a) Electrons (b) Protons
(a) Single crystal (b) Poly crystal (c) Holes (d) Neutrons
(c) Liquid crystal (d) Semiconductors
2. A P-type semiconductor can be obtained by adding
21. The nearest distance between two atoms in case of a bcc lattice is
[NCERT 1979; BIT 1988; MP PMT 1987; 90]
equal to [J & K CET 2004]
(a) Arsenic to pure silicon
2 3
(a) a (b) a (b) Gallium to pure silicon
3 2
(c) Antimony to pure germanium
a
(c) q 3 (d) (d) Phosphorous to pure germanium
2
3. The valence of an impurity added to germanium crystal in order to
22. What is the net force on a Cl placed at the centre of the bcc
–
convert it into a P-type semi conductor is
structure of CsCl [DCE 2003; AIIMS 2004] [MP PMT 1989; CPMT 1987]

Cs +
Cs + (a) 6 (b) 5
(c) 4 (d) 3
Cs+ Cs+
Cl
a Cs+
Cs+
a
Cs+ a Cs+
 1558 Electronics
4. In a semiconductor, the concentration of electrons is (c) Silicon, germanium, tellurium
8  10 14 / cm 3 and that of the holes is 5  1012 cm 3 . The (d) Silicon, tellurium, germanium
semiconductor is [MP PMT 1997; RPET 1999;
13. When a semiconductor is heated, its resistance
Kerala PET 2002]
[KCET 1992; MP PMT 1994; MP PET 1992, 2002;
(a) P-type (b) N-type
RPMT 2001; DCE 2001]
(c) Intrinsic (d) PNP-type
(a) Decreases (b) Increases
5. In P-type semiconductor, there is [MP PMT 1989]
(c) Remains unchanged (d) Nothing is definite
(a) An excess of one electron
14. In an insulator, the forbidden energy gap between the valence band
(b) Absence of one electron and conduction band is of the order of
(c) A missing atom [DPMT 1988; EAMCET (Engg.) 1995; MP PET 1996]
(d) A donar level
(a) 1 MeV (b) 0.1 MeV
6. The valence of the impurity atom that is to be added to germanium
crystal so as to make it a N-type semiconductor, is (c) 1 eV (d) 5 eV
[MNR 1993; MP PET 1994; CBSE PMT 1999; AIIMS 2000]
15. A N-type semiconductor is [AFMC 1988; RPMT 1999]
(a) 6 (b) 5
(a) Negatively charged (b) Positively charged
(c) 4 (d) 3
(c) Neutral (d) None of these
7. Silicon is a semiconductor. If a small amount of As is added to it,
then its electrical conductivity [MP PMT 1996] 16. The energy band gap of Si is
(a) Decreases (b) Increases [MP PET 1994, 2002; BHU 1995; RPMT 2000]
(c) Remains unchanged (d) Becomes zero (a) 0.70 eV
8. When the electrical conductivity of a semi- conductor is due to (b) 1.1 eV
the breaking of its covalent bonds, then the semiconductor is said to
be (c) Between 0.70 eV to 1.1 eV
[AIIMS 1997; KCET (Engg.) 2002]
(d) 5 eV
(a) Donar (b) Acceptor
17. The forbidden energy band gap in conductors, semiconductors and
(c) Intrinsic (d) Extrinsic
insulators are EG1 , EG2 and EG3 respectively. The relation
9. A piece of copper and the other of germanium are cooled from the among them is
room temperature to 80 K, then which of the following would be a
correct statement [MP PMT 1994; RPMT 1997]
[IIT-JEE 1988; Bihar CEE 1992; CBSE PMT 1993; (a) EG1  EG2  EG3 (b) EG1  EG2  EG3
MP PET 1997; RPET 1999; AIEEE 2004]
(a) Resistance of each increases (c) EG1  EG2  EG3 (d) EG1  EG2  EG3
(b) Resistance of each decreases 18. Which statement is correct [MP PMT 1994]
(c) Resistance of copper increases while that of germanium
decreases (a) N-type germanium is negatively charged and P-type germanium
is positively charged
(d) Resistance of copper decreases while that of germanium
increases (b) Both N-type and P-type germanium are neutral
10. To obtain P-type Si semiconductor, we need to dope pure Si (c) N-type germanium is positively charged and P-type germanium
with [IIT-JEE 1988; MP PET 1997, 93; is negatively charged
Pb. PMT 2001, 02; UPSEAT 2004] (d) Both N-type and P-type germanium are negatively charged
(a) Aluminium (b) Phosphorous 19. When Ge crystals are doped with phosphorus atom, then it becomes
(c) Oxygen (d) Germanium [AFMC 1995; Orissa PMT 2004]

11. Electrical conductivity of a semiconductor (a) Insulator (b) P-type

[MP PMT 1993, 2000; RPET 1996] (c) N-type (d) Superconductor
(a) Decreases with the rise in its temperature 20. Let n P and n e be the number of holes and conduction electrons
(b) Increases with the rise in its temperature respectively in a semiconductor. Then
(c) Does not change with the rise in its temperature [MP PET 1995]
(d) First increases and then decreases with the rise in its (a) n P  n e in an intrinsic semiconductor
temperature
12. Three semi-conductors are arranged in the increasing order of their (b) n P  n e in an extrinsic semiconductor
energy gap as follows. The correct arrangement is
(c) n P  n e in an intrinsic semiconductor
[MP PMT 1993]
(a) Tellurium, germanium, silicon (d) n e  n P in an intrinsic semiconductor
(b) Tellurium, silicon, germanium
 Electronics 1559
21. Wires P and Q have the same resistance at ordinary (room) (c) Will first decrease and then increase
temperature. When heated, resistance of P increases and that of Q (d) Will not change
decreases. We conclude that
31. If N P and N e be the numbers of holes and conduction electrons in
[MP PMT 1995; MP PET 2001] an extrinsic semiconductor, then
(a) P and Q are conductors of different materials [MP PMT 1999; AMU 2001]
(b) P is N-type semiconductor and Q is P-type semiconductor (a) N P  Ne
(c) P is semiconductor and Q is conductor
(b) N P  Ne
(d) P is conductor and Q is semiconductor
(c) N P  Ne
22. The impurity atoms which are mixed with pure silicon to make a P-
type semiconductor are those of [MP PMT 1995] (d) N P  N e or N P  N e depending on the nature of impurity
(a) Phosphorus (b) Boron 32. In intrinsic semiconductor at room temperature, number of
(c) Antimony (d) Copper electrons and holes are
[EAMCET (Engg.) 1995; JIPMER 2001, 02]
23. Holes are charge carriers in [IIT-JEE 1996]
(a) Equal (b) Zero
(a) Intrinsic semiconductors (b) Ionic solids
(c) Unequal (d) Infinite
(c) P-type semiconductors (d) Metals 33. (USS 133) Indium impurity in germanium makes
24. In extrinsic P and N-type, semiconductor materials, the ratio of the [EAMCET (Engg.) 1995]
impurity atoms to the pure semiconductor atoms is about [MP PET 2003]
(a) N-type (b) P-type
(a) 1 (b) 10 1 (c) Insulator (d) Intrinsic
34. Fermi level of energy of an intrinsic semiconductor lies
(c) 10 4 (d) 10 7
[EAMCET (Med.) 1995]
25. A hole in a P-type semiconductor is [MP PET 1996]
(a) In the middle of forbidden gap
(a) An excess electron (b) A missing electron (b) Below the middle of forbidden gap
(c) A missing atom (d) A donor level (c) Above the middle of forbidden gap
26. The forbidden gap in the energy bands of germanium at room (d) Outside the forbidden gap
temperature is about [MP PMT/PET 1998]
35. In a semiconductor the separation between conduction band and
(a) 1.1eV (b) 0.1eV valence band is of the order of
[EAMCET (Med.) 1995; AIIMS 2000]
(c) 0.67eV (d) 6.7 eV
(a) 100 eV (b) 10 eV
27. In P-type semiconductor the majority and minority charge carriers
are respectively (c) 1 eV (d) 0 eV
[EAMCET 1994; MP PMT/PET 1998; MH CET 2000]
36. The intrinsic semiconductor becomes an insulator at
(a) Protons and electrons (b) Electrons and protons [EAMCET (Med.) 1995; KCET (Engg./Med.) 1999;
(c) Electrons and holes (d) Holes and electrons MP PET 2000; CBSE PMT 2001]
28. At zero Kelvin a piece of germanium [MP PET 1999] (a) 0C (b) 100C
(a) Becomes semiconductor (c) 300 K (d) 0 K
(b) Becomes good conductor
37. The addition of antimony atoms to a sample of intrinsic germanium
(c) Becomes bad conductor transforms it to a material which is
(d) Has maximum conductivity [AMU 1995]
29. Electronic configuration of germanium is 2, 8, 18 and 4. To make it
(a) Superconductor (b) An insulator
extrinsic semiconductor small quantity of antimony is added [MP PET 1999]
(a) The material obtained will be N-type germanium in which (c) N-type semiconductor (d) P-type semiconductor
electrons and holes are equal in number 38. Resistance of semiconductor at 0K is [RPET 1997]
(b) The material obtained will be P-type germanium (a) Zero (b) Infinite
(c) The material obtained will be N-type germanium which has
(c) Large (d) Small
more electrons than holes at room temperature
(d) The material obtained will be N-type germanium which has less 39. In a good conductor the energy gap between the conduction band
electrons than holes at room temperature and the valence band is
[KCET 1993; EMCET (Med.) 1994]
30. A semiconductor is cooled from T1 K to T2 K. Its resistance
(a) Infinite (b) Wide
[MP PET 1999]
(c) Narrow (d) Zero
(a) Will decrease
(b) Will increase 40. The impurity atom added to germanium to make it N-type
semiconductor is [KCET 1993; KCET (Engg./Med.) 2000]
 1560 Electronics
(a) Arsenic (b) Iridium (a) Increased (b) Decreased
(c) Aluminium (d) Iodine (c) Remain same (d) Zero
41. When N-type of semiconductor is heated 50. In a P-type semiconductor, germanium is doped with
[CBSE PMT 1993; DPMT 2000] [AFMC 1999]
(a) Number of electrons increases while that of holes decreases (a) Boron (b) Gallium
(b) Number of holes increases while that of electrons decreases (c) Aluminium (d) All of these
(c) Number of electrons and holes remains same 51. In N-type semiconductors, majority charge carriers are
(d) Number of electrons and holes increases equally [AIIMS 1999]
42. To obtain a P-type germanium semiconductor, it must be doped (a) Holes (b) Protons
with [CBSE PMT 1997; Pb. PET 2000] (c) Neutrons (d) Electrons
(a) Arsenic (b) Antimony 52. Semiconductor is damaged by the strong current due to
(c) Indium (d) Phosphorus [MH CET 2000]
43. The temperature coefficient of resistance of a semiconductor (a) Lack of free electron (b) Excess of electrons
[AFMC 1998, MNR 1998] (c) Excess of proton (d) None of these
(a) Is always positive 53. GaAs is [RPMT 2000]
(b) Is always negative (a) Element semiconductor
(c) Is zero
(b) Alloy semiconductor
(d) May be positive or negative or zero
(c) Bad conductor
44. P-type semiconductor is formed when [RPET 1999]
(d) Metallic semiconductor
A. As impurity is mixed in Si
B. Al impurity is mixed in Si 54. If ne and nh are the number of electrons and holes in a
C. B impurity is mixed in Ge semiconductor heavily doped with phosphorus, then
D. P impurity is mixed in Ge [MP PMT 2000]
(a) A and C (b) A and D (a) ne  nh (b) ne  nh
(c) B and C (d) B and D
45. In case of a semiconductor, which of the following statement is (c) ne  nh (d) ne  nh
wrong [Pb. PMT 1999]
55. An N-type and P-type silicon can be obtained by doping pure silicon
(a) Doping increases conductivity with [EAMCET (Med.) 2000]
(b) Temperature coefficient of resistance is negative
(a) Arsenic and Phosphorous (b) Indium and Aluminium
(c) Resisitivity is in between that of a conductor and insulator
(d) At absolute zero temperature, it behaves like a conductor (c) Phosphorous and Indium (d) Aluminium and Boron
46. Energy bands in solids are a consequence of 56. N-type semiconductors will be obtained, when germanium is doped
[DCE 1999, 2000; AIEEE 2004] with [AIIMS 2000]
(a) Ohm’s Law (a) Phosphorus (b) Aluminium
(b) Pauli’s exclusion principle (c) Arsenic (d) Both (a) or (c)
(c) Bohr’s theory 57. The state of the energy gained by valance electrons when the
(d) Heisenberg’s uncertainty principle temperature is raised or when electric field is applied is called as [CBSE

47. In a P-type semiconductor (a) Valance band (b) Conduction band

[AIIMS 1997; Orissa JEE 2002; MP PET 2003] (c) Forbidden band (d) None of these
(a) Current is mainly carried by holes 58. To obtain electrons as majority charge carriers in a semiconductor,
the impurity mixed is [MP PET 2000]
(b) Current is mainly carried by electrons
(a) Monovalent (b) Divalent
(c) The material is always positively charged
(d) Doping is done by pentavalent material (c) Trivalent (d) Pentavalent

48. At ordinary temperatures, the electrical conductivity of semi 59. For germanium crystal, the forbidden energy gap in joules is
conductors in mho /mete r is in the range [MP PET 2003] [MP PET 2000]

(a) 10 3 to 10 4 (b) 10 6 to 10 9 (a) 1.12  10 19 (b) 1.76  10 19

(c) 10 6 to 10 10 (d) 10 10 to 10 16 (c) 1.6  10 19 (d) Zero
49. When the temperature of silicon sample is increased from 27C to 60. A pure semiconductor behaves slightly as a conductor at
100C , the conductivity of silicon will be [MH CET (Med.) 2001; BHU 2000; AFMC 2001]
[RPMT 1999] (a) Room temperature (b) Low temperature
 Electronics 1561
(c) High temperature (d) Both (b) and (c) (b) N-type semiconductor is formed
61. Which is the correct relation for forbidden energy gap in conductor, (c) Both (a) and (b)
semi conductor and insulator (d) None of these
[RPMT 2001; AIEEE 2002]
72. To a germanium sample, traces of gallium are added as an impurity.
(a) Egc  Egsc  Eginsulator The resultant sample would behave like
(b) Eginsulator  Egsc  Egconductor [AIIMS 2003]
(a) A conductor
(c) Egconductor  Eginsulator  Egsc
(b) A P-type semiconductor
(d) Egsc  Egconductor  Eginsulator (c) An N-type semiconductor
62. The band gap in Germanium and silicon in eV respectively is (d) An insulator [MP PMT 2001]
(a) 0.7, 1.1 (b) 1.1, 0.7 73. For non-conductors, the energy gap is
(c) 1.1, 0 (d) 0, 1.1 [EAMCET (Engg.) 1995; MP PET 1996; RPET 2003]
63. P-type semiconductors are made by adding impurity element [MP PMT 2001]
(a) 6 eV (b) 1.1 eV
(a) As (b) P (c) 0.8 eV (d) 0.3 eV
(c) B (d) Bi 74. Donor type impurity is found in [RPET 2003]
64. At room temperature, a P-type semiconductor has (a) Trivalent elements (b) Pentavalent elements
[Kerala PMT 2002]
(c) In both the above (d) None of these
(a) Large number of holes and few electrons
75. The difference in the variation of resistance with temperature in a
(b) Large number of free electrons and few holes metal and a semiconductor arises essentially due to the difference in
(c) Equal number of free electrons and holes the [AIEEE 2003]
(d) No electrons or holes (a) Variation of scattering mechanism with temperature
65. In intrinsic semiconductor at room temperature, number of (b) Crystal structure
electrons and holes are [JIPMER 2001, 02; MP PMT 2002]
(c) Variation of the number of charge carriers with temperature
(a) Unequal (b) Equal
(d) Type of bon
(c) Infinite (d) Zero
76. The charge on a hole is equal to the charge of
66. The valence band and conduction band of a solid overlap at low
temperature, the solid may be [MP PMT 2004]

[Orissa JEE 2002; BCECE 2004] (a) Zero (b) Proton

(a) A metal (b) A semiconductor (c) Neutron (d) Electron
(c) An insulator (d) None of these 77. When germanium is doped with phosphorus, the doped material has [MP PM
67. Which impurity is doped in Si to form N-type semi-conductor?[CBSE PMT 1996; AIEEE
(a)2002]
Excess positive charge
(a) Al (b) B (b) Excess negative charge
(c) As (d) None of these (c) More negative current carriers
68. In a semiconductor [AIEEE 2002; AIIMS 2002] (d) More positive current carriers
(a) There are no free electrons at any temperature 78. A Ge specimen is doped with Al. The concentration of acceptor
(b) The number of free electrons is more than that in a conductor atoms is ~10 atoms/m . Given that the intrinsic concentration of
21 3

(c) There are no free electrons at 0 K electron hole pairs is ~ 1019 / m 3 , the concentration of electrons
(d) None of these in the specimen is [AIIMS 2004]

69. The energy band gap is maximum in [AIEEE 2002] (a) 1017 / m 3 (b) 1015 / m 3
(a) Metals (b) Superconductors
(c) 10 4 / m 3 (d) 10 2 / m 3
(c) Insulators (d) Semiconductors
79. Which of the following has negative temperature coefficient of
70. The process of adding impurities to the pure semiconductor is called
resistance [AFMC 2004]
[MH CET 2002]
(a) Copper (b) Aluminium
(a) Drouping (b) Drooping
(c) Iron (d) Germanium
(c) Doping (d) None of these
80. In semiconductors at a room temperature [CBSE PMT 2004]
71. When phosphorus and antimony are mixed in zermaniun, then [CPMT 2003]
(a) The valence band is partially empty and the conduction band is
(a) P-type semiconductor is formed
partially filled
 1562 Electronics
(b) The valence band is completely filled and the conduction band (b) The gap between conduction band and valence band is more
is partially filled than 16 eV
(c) The valence band is completely filled (c) The gap between conduction band and valence band is near
(d) The conduction band is completely empty about 1 eV
81. Regarding a semiconductor which one of the following is wrong (d) The gap between
[CPMT 2004] conduction band and valence band will be 100
(a) There are no free electrons at room temperature eV and more

(b) There are no free electrons at 0 K 89. Resistivity of a semiconductor depends on [MP PMT 1999]

(c) The number of free electrons increases with rise of (a) Shape of semiconductor
temperature (b) Atomic nature of semiconductor
(d) The charge carriers are electrons and holes (c) Length of semiconductor
82. Which of the following statements is true for an N-type semi- (d) Shape and atomic nature of semiconductor
conductor [CPMT 2004] 90. Electric current is due to drift of electrons in [CPMT 1996]
(a) The donor level lies closely below the bottom of the conduction (a) Metallic conductors
band
(b) Semi-conductors
(b) The donor level lies closely above the top of the valence band
(c) Both (a) and (b)
(c) The donor level lies at the halfway mark of the forbidden
energy gap (d) None of these
(d) None of above 91. The energy gap of silicon is 1.14 eV. The maximum wavelength at
83. Choose the correct statement [DCE 2004] which silicon will begin absorbing energy is
[MP PMT 1993]
(a) When we heat a semiconductor its resistance increases
(a) 10888 Å (b) 1088.8 Å
(b) When we heat a semiconductor its resistance decreases
(c) 108.88 Å (d) 10.888 Å
(c) When we cool a semiconductor to 0 K then it becomes super
conductor 92. Which of the following energy band diagram shows the N-type
(d) Resistance of a semiconductor is independent of temperature semiconductor [RPET 1986]

84. In a P-type semi-conductor, germanium is dopped with Conduction Conduction

band (CB) band (CB)
[MH CET 2003] (a) (b)
(a) Gallium (b) Boron Impurity
Eg 1eV 1eV level
(c) Aluminium (d) All of these
Valance Valance
85. A piece of semiconductor is connected in series in an electric circuit. band (VB) band (VB)
On increasing the temperature, the current in the circuit will [RPMT 2003]
Valance Valance
(a) Decrease (b) Remain unchanged band (VB) band (VB)
(c) (d)
(c) Increase (d) Stop flowing 1eV
Impurity
level 1eV
86. Intrinsic semiconductor is electrically neutral. Extrinsic
semiconductor having large number of current carriers would be Conduction
[AMU (Engg.) 2001] Conduction
band (CB) band (CB)
(a) Positively charged
(b) Negatively charged 93. The mobility of free electron is greater than that of free holes
because
(c) Positively charged or negatively charged depending upon the
type of impurity that has been added (a) The carry negative charge
(d) Electrically neutral (b) They are light
87. If n and v be the number of electrons and drift velocity in a
e d
(c) They mutually collide less
semiconductor. When the temperature is increased (d) They require low energy to continue their motion
[Pb. CET 2000]
94. The relation between the number of free electrons in
(a) n increases and v decreases
e d

semiconductors (n) and its temperature (T) is

(b) n decreases and v increases
e d

(c) Both n and v increases (a) n  T 2 (b) n  T

e d

(d) Both n and v decreases

e d (c) n  T (d) n  T 3 / 2
88. In extrinsic semiconductors [EAMCET (Engg.) 1999]
(a) The conduction band and valence band overlap
95. The electron mobility in N-type germanium is 3900 cm /v-s and its 2
(c) To make it neutral before disposal
conductivity is 6.24 mho/cm, then impurity concentration will be if (d) To carry out further purification
the effect of cotters is negligible
Semiconductor Diode
(a) 10 cm 15
(b) 10 /cm
13 3

(c) 10 /cm 12 3
(d) 10 /cm
16 3 1. In the forward bias arrangement of a PN-junction diode
[MP PMT 1994, 96, 99]
96. Which of the energy band diagrams shown in the figure corresponds
(a) The N-end is connected to the positive terminal of the battery
to that of a semiconductor
3
[Orissa JEE 2003]
(b) The P-end is connected to the positive terminal of the battery
CB (c) The direction of current is from N-end to P-end in the diode
CB (d) The P-end is connected to the negative terminal of battery
2. In a PN-junction diode [MP PET 1993]
(a) (b)
(a) The current in the reverse biased condition is generally very
small

VB
(b) The current in the reverse biased condition is small but the
VB forward biased current is independent of the bias voltage
(c) The reverse biased current is strongly dependent on the
CB applied bias voltage
CB
(c) (d) (d) The forward biased current is very small in comparison to
reverse biased current
Eg >> KT Eg = KT
VB 3. The cut-in voltage for silicon diode is approximately
VB
(a) 0.2 V (b) 0.6 V
97. The energy band diagrams for three semiconductor samples of
silicon are as shown. We can then assert that (c) 1.1 V (d) 1.4 V
[Haryana CEE 1996] 4. The electrical circuit used to get smooth dc output from a rectifier
circuit is called [KCET 2003]
(a) Oscillator (b) Filter
(c) Amplifier (d) Logic gates
5. PN-junction diode works as a insulator, if connected
X Y Z
(a) Sample X is undoped while samples Y and Z have been doped [CPMT 1987]
with a third group and a fifth group impurity respectively (a) To A.C. (b) In forward bias
(b) Sample X is undoped while both samples Y and Z have been
doped with a fifth group impurity (c) In reverse bias (d) None of these
(c) Sample X has been doped with equal amounts of third and fifth 6. The reverse biasing in a PN junction diode
group impurities while samples Y and Z are undoped
[MP PMT 1991; EAMCET 1994; CBSE PMT 2003]
(d) Sample X is undoped while samples Y and Z have been doped
with a fifth group and a third group impurity respectively (a) Decreases the potential barrier
98. Carbon, silicon and Germanium atoms have four valence electrons (b) Increases the potential barrier
each. Their valence and conduction band are separated by energy
band gaps represented by (E ) . (E ) and (E ) respectively. Which one
g C g Si g Ge
(c) Increases the number of minority charge carriers
of the following relationship is true in their case [CBSE
(d)PMT 2005] the number of majority charge carriers
Increases
(a) (Eg )C  (Eg )Si (b) (Eg )C  (Eg )Si 7. The electrical resistance of depletion layer is large because
(c) (Eg )C  (Eg )Ge (d) (Eg )C  (Eg )Si (a) It has no charge carriers
99. A semiconductor dopped with a donor impurity is (b) It has a large number of charge carriers
[AFMC 2005] (c) It contains electrons as charge carriers
(a) P-type (b) N-type (d) It has holes as charge carriers
(c) NPN type (d) PNP type
8. In the circuit given below, the value of the current is
100. In a semiconducting material the mobilities of electrons and holes
are  and  respectively. Which of the following is true + 42005]
[AIIMS V PN 300 + 1V
e h

(a) e 
h  (b) e  h
(a) 0 amp (b) 10 2 amp
(c) e  h (d)  e  0;  h  0
(c) 10 2 amp (d) 10 3 amp
101. Doping of intrinsic semiconductor is done [Orissa JEE 2005]
(a) To neutralize charge carriers 9. What is the current in the circuit shown below
(b) To increase the concentration of majority charge carriers [AFMC 2000; RPMT 2001]
– 4V PN 300 – 1V

(a) 0 amp (b) 10 2 amp

(c) 1 amp (d) 0.10 amp
 Electronics 1565

10. If the forward voltage in a semiconductor diode is doubled, the

width of the depletion layer will [MP PMT 1996] (c) (d)
(a) Become half (b) Become one-fourth
(c) Remain unchanged (d) Become double
11. The PN junction diode is used as 18. Which of the following statements concerning the depletion zone of
an unbiased PN junction is (are) true
[CPMT 1972; AFMC 1997; CBSE PMT 1999;
[IIT-JEE 1995]
AIIMS 1999; RPMT 2000; MP PMT 04]
(a) The width of the zone is independent of the densities of the
(a) An amplifier (b) A rectifier dopants (impurities)
(c) An oscillator (d) A modulator (b) The width of the zone is dependent on the densities of the
dopants
12. When a PN junction diode is reverse biased
(c) The electric field in the zone is produced by the ionized dopant
(a) Electrons and holes are attracted towards each other and move atoms
towards the depletion region (d) The electric field in the zone is provided by the electrons in the
(b) Electrons and holes move away from the junction depletion conduction band and the holes in the valence band
region 19. A semiconductor device is connected in a series circuit with a
battery and a resistance. A current is found to pass through the
(c) Height of the potential barrier decreases
circuit. If the polarity of the battery is reversed, the current drops
(d) No change in the current takes place almost to zero. The device may be
13. Two PN-junctions can be connected in series by three different [MP PET 1995; CBSE PMT 1998]
methods as shown in the figure. If the potential difference in the (a) A P-type semiconductor (b) An N-type semiconductor
junctions is the same, then the correct connections will be [IIT-JEE 1989]
(c) A PN-junction (d) An intrinsic semiconductor
P N N P P N P N N P N P 20. The approximate ratio of resistances in the forward and reverse bias
of the PN-junction diode is
[MP PET 2000; MP PMT 1999, 2002, 03; Pb. PMT 2003]

+ – + – + – 2
(a) 10 : 1 (b) 10 2 : 1
1 2 3
(c) 1 : 10 4 (d) 1 : 10 4
21. In a junction diode, the holes are due to
(a) In the circuit (1) and (2) (b) In the circuit (2) and (3) [CBSE PMT 1999; Pb. PMT 2003]
(c) In the circuit (1) and (3) (d) Only in the circuit (1) (a) Protons (b) Neutrons
14. A PN- junction has a thickness of the order of [BIT 1990] (c) Extra electrons (d) Missing of electrons
22. In forward bias, the width of potential barrier in a P-N junction
(a) 1 cm (b) 1 mm
diode [EAMCET (Engg.) 1995; CBSE PMT 1999

(c) 10 6 m (d) 10 12 cm RPMT 1997, 2002, 03]

(a) Increases
15. In the depletion region of an unbiased P-N junction diode there are [KCET 1999; CBSE PMT 1999;
(b) Decreases
RPMT 2001; MP PMT 1994, 2003]
(c) Remains constant
(a) Only electrons
(d) First increases then decreases
(b) Only holes
23. The cause of the potential barrier in a P-N diode is
(c) Both electrons and holes
[CBSE PMT 1998; RPMT 2001]
(d) Only fixed ions
(a) Depletion of positive charges near the junction
16. On increasing the reverse bias to a large value in a PN-junction
diode, current [MP PMT 1994; BHU 2002] (b) Concentration of positive charges near the junction

(a) Increases slowly (b) Remains fixed (c) Depletion of negative charges near the junction
(c) Suddenly increases (d) Decreases slowly (d) Concentration of positive and negative charges near the
junction
17. In the case of forward biasing of PN-junction, which one of the
following figures correctly depicts the direction of flow of carriers 24. In a PN-[CBSE
junction
PMTdiode
1995] not connected to any circuit
– + – + [IIT-JEE 1998]
P – + N P – + N
(a) – + (b) – +
 – +   – +  (a) The potential is the same everywhere
– + – +
(b) The P-type is a higher potential than the N-type side
(c) There is an electric field at the junction directed from the N-
Vp Vp type side to the P- type side
– + – +
P – + N P – + N
– – +
 –
+
+   – + 
– + – +

Vp Vp
 1566 Electronics
(d) There is an electric field at the junction directed from the P-
type side to the N-type side 32. The reason of current flow in P-N junction in forward bias is
25. Which of the following statements is not true [RPMT 2000]
[IIT-JEE 1997 Re-Exam] (a) Drifting of charge carriers
(a) The resistance of intrinsic semiconductors decrease with (b) Minority charge carriers
increase of temperature (c) Diffusion of charge carriers
(b) Doping pure Si with trivalent impurities give P-type (d) All of these
semiconductors 33. The resistance of a reverse biased P-N junction diode is about [MP PM
(c) The majority carriers in N-type semiconductors are
(a) 1 ohm (b) 10 2 ohm
holes
(c) 10 3 ohm (d) 10 6 ohm
(d) A PN-junction can act as a semiconductor diode
34. Consider the following statements A and B and identify the correct
26. The dominant mechanisms for motion of charge carriers in forward choice of the given answers
and reverse biased silicon P-N junctions are A: The width of the depletion layer in a P-N junction diode increases
[IIT-JEE 1997 Cancelled; RPMT 2000; AIIMS 2000] in forwards bias
(a) Drift in forward bias, diffusion in reverse bias B: In an intrinsic semiconductor the fermi energy level is exactly
in the middle of the forbidden gap
(b) Diffusion in forward bias, drift in reverse bias
[EAMCET (Engg.) 2000]
(c) Diffusion in both forward and reverse bias (a) A is true and B is false (b) Both A and B are false
(d) Drift in both forward and reverse bias (c) A is false and B is true (d) Both A and B are true
27. In P-N junction, avalanche current flows in circuit when biasing is 35. [RPET 1997]
In comparison to a half wave rectifier, the full wave rectifier gives
(a) Forward (b) Reverse lower [AFMC 2001]

(c) Zero (d) Excess (a) Efficiency (b) Average dc

28. The depletion layer in the P-N junction region is caused by (c) Average output voltage (d) None of these
[CBSE PMT 1994] 36. Avalanche breakdown is due to [RPMT 2001]
(a) Collision of minority charge carrier
(a) Drift of holes
(b) Increase in depletion layer thickness
(b) Diffusion of charge carriers
(c) Decrease in depletion layer thickness
(c) Migration of impurity ions (d) None of these
(d) Drift of electrons 37. Which is reverse biased diode [DCE 2001]
29. Which one is reverse-biased [DCE 1999]
10V (a) (b) –20V
15V
(a) (b) – 5V 5V
– 10V –10V
(c) 15V (d) 10V
– 5V
10V – 5V
(c) (d)
– 10V 38. Zener breakdown in a semi-conductor diode occurs when
10V [UPSEAT 2002]
30. In a P-N junction diode if P region is heavily doped than n region (a) Forward current exceeds certain value
then the depletion layer is [RPMT 1999] (b) Reverse bias exceeds certain value
(a) Greater in P region (c) Forward bias exceeds certain value
(b) Greater in N region (d) Potential barrier is reduced to zero
(c) Equal in both region 39. When forward bias is applied to a P-N junction, then what happens
to the potential barrier VB , and the width of charge depleted
(d) No depletion layer is formed in this case
region x [UPSEAT 2002, 03;
31. Which one is in forward bias [RPMT 2000]
Roorkee 1999; RPET 2003; AIEEE 2004]
(a) VB increases, x decreases
(a) (b)
(b) VB decreases, x increases
+ –
(c) VB increases, x increases

(c) (d) None of these (d) VB decreases, x decreases

– +
 Electronics 1567
40. The potential barrier, in the depletion layer, is due to (d) Low potential at N side and zero potential at P side
[EAMCET (Engg.) 1998; 48. For the given circuit of PN-junction diode, which of the following
Pb. PMT 1999; Pb. PET 2001; AIIMS 2002] statement is correct [CBSE PMT 2002]
(a) Ions (b) Holes R
(c) Electrons (d) Both (b) and (c)
41. In the given figure, which of the diodes are forward biased ?
+5V [Kerala PET 2002]

+10V V
1. R 2. (a) In forward biasing the voltage across R is V
(b) In forward biasing the voltage across R is 2V
+5V (c) In reverse biasing the voltage across R is V
(d) In reverse biasing the voltage across R is 2V
3. 4. – 12V 49. On adjusting the P-N junction diode in forward biased
– 10 V R
[RPET 2003]

5. – 5V (a) Depletion layer increases (b) Resistance increases

(c) Both decreases (d) None of these
R 50. In the middle of the depletion layer of a reverse-biased PN junction,
(a) 1, 2, 3 (b) 2, 4, 5
the [AIEEE 2003]
(c) 1, 3, 4 – 10V (d) 2, 3, 4
42. Function of rectifier is [AFMC 2002, 04] (a) Potential is zero (b) Electric field is zero
(a) To convert ac into dc (b) To convert dc into ac (c) Potential is maximum (d) Electric field is maximum
(c) Both (a) and (b) (d) None of these 51. Barrier potential of a P-N junction diode does not depend on
43. When the P end of P-N junction is connected to the negative (a) Temperature (b) Forward bias
terminal of the battery and the N end to the positive terminal of the
battery, then the P-N junction behaves like (c) Doping density
[MP PET 2002] (d) Diode design
(a) A conductor (b) An insulator 52. A crystal diode is a [MP PET 2004]
(c) A super-conductor (d) A semi-conductor (a) Non-linear device (b) Amplifying device
44. If the two ends P and N of a P-N diode junction are joined by a wire
[MP PMT 2002] (c) Linear device (d) Fluctuating device
(a) There will not be a steady current in the circuit 53. Of the diodes shown in the following diagrams, which one is reverse
(b) There will be a steady current from N side to P side biased [CBSE PMT 2004]

(c) There will be a steady current from P side to N side (a) (b)
–12V
(d) There may not be a current depending upon the resistance of R R
the connecting wire
45. A potential barrier of 0.50 V exists across a P-N junction. If the – 10V
– 5V
depletion region is 5.0  10 7 m wide, the intensity of the electric +5V +10V
field in this region is [UPSEAT 2002] (c) (d)
R
(a) 1.0  10 V/m
6
(b) 1.0  10 V/m
5
+5V R

(c) 2.0  10 5 V/m (d) 2.0  10 6 V/m

46. If no external voltage is applied across P-N junction, there would be 54. In a PN[Orissa
junction photo cell, the value of photo-electromotive force
JEE 2002]
(a) No electric field across the junction produced by monochromatic light is proportional to [CBSE PMT 2004]

(b) An electric field pointing from N-type to P-type side across the (a) The voltage applied at the PN junction
junction (b) The barrier voltage at the PN junction
(c) An electric field pointing from P-type to N-type side across the
junction (c) The intensity of the light falling on the cell
(d) A temporary electric field during formation of P-N junction (d) The frequency of the light falling on the cell
that would subsequently disappear 55. Which is the correct diagram of a half-wave rectifier
47. In a PN-junction [CBSE PMT 2002]
[Orissa PMT 2004]
(a) P and N both are at same potential
(a) + (b) +
(b) High potential at N side and low potential at P side
(c) High potential at P side and low potential at N side

– –
 1568 Electronics

(a) (b) + –

+
(c) + (d) +
+ – –
(c) (d)

56. The maximum efficiency of full wave rectifier is – 64. Which one of the following statements is not correct
–
[J & K CET 2004] [SCRA 2000]

(a) 100% (b) 25.20% (a) A diode does not obey Ohm's law
(b) A PN junction diode symbol shows an arrow identifying the
(c) 40.2% (d) 81.2%
direction of current (forward) flow
57. Serious draw back of the semiconductor device is (c) An ideal diode is an open switch
[Pb. PMT 2004] (d) An ideal diode is an ideal one way conductor
(a) They cannot be used with high voltage 65. Which of the following semi-conductor diodes is reverse biased [DPM

(b) They pollute the environment (a) (b)

– 5V 10V
(c) They are costly
(d) They do not last for long time
(c) 10V 5V (d) – 5V – 15V
58. Select the correct statement [RPMT 2003]

(a) In a full wave rectifier, two diodes work alternately 66. No bias is applied to a P-N junction, then the current
(b) In a full wave rectifier, two diodes work simultaneously [RPMT 1999]

(c) The efficiency of full wave and half wave rectifiers is same (a) Is zero because the number of charge carriers flowing on both
sides is same
(d) The full wave rectifier is bi-directional. (b) Is zero because the charge carriers do not move
59. In order to forward bias a PN junction, the negative terminal of (c) Is non-zero
battery is connected to [RPMT 2003] (d) None of these
(a) P–side (b) Either P–side or N–side 67. Zener diode is used as [CBSE PMT 1999]

(c) N–side (d) None of these (a) Half wave rectifier (b) Full wave rectifier
(c) ac voltage stabilizer (d) dc voltage stabilizer
60. The diode shown in the circuit is a silicon diode. The potential
difference between the points A and B will be 68. The width of forbidden gap in silicon crystal is 1.1 eV. When the
crystal is converted in to a N-type semiconductor the distance of
[RPMT 2002] Fermi level from conduction band is
2 S
A B
(a) 6 V [EAMCET (Med.) 1999]

(b) 0.6 V (a) Greater than 0.55 eV (b) Equal to 0.55 eV

(c) Lesser than 0.55 eV (d) Equal to 1.1 eV
(c) 0.7 V
69. A semiconductor X is made by doping a germanium crystal with
(d) 0 V arsenic (Z = 33). A second semiconductor Y is made by doping
6V
61. Zener breakdown takes place if [RPMT 2000] germanium with indium (Z = 49). The two are joined end to end
and connected to a battery as shown. Which of the following
(a) Doped impurity is low (b) Doped impurity is high statements is correct
(c) Less impurity in N-part (d) Less impurity in P-type [Orissa JEE 1998]
X Y
62. Consider the following statements A and B and identify the correct
choice of the given answers
(A) A zener diode is always connected in reverse bias
(B) The potential barrier of a PN junction lies between 0.1 to 0.3 V
approximately [EAMCET 2000] (a) X is P-type, Y is N-type and the junction is forward biased
(a) A and B are correct (b) X is N-type, Y is P-type and the junction is forward biased
(b) A and B are wrong (c) X is P-type, Y is N-type and the junction is reverse biased

(c) A is correct but B is wrong (d) X is N-type, Y is P-type and the junction is reverse biased
70. In P-N junction, the barrier potential offers resistance to
(d) A is wrong but B is correct
[AMU 1995, 96]
63. The correct symbol for zener diode is [RPMT 2000]
 Electronics 1569
(a) Free electrons in N region and holes in P region (a) 50 Hz (b) 70.7 Hz
(b) Free electrons in P region and holes in N region (c) 100 Hz (d) 25 Hz
(c) Only free electrons in N region 78. In a full wave rectifiers, input ac current has a frequency ‘’. The
(d) Only holes in P region output frequency of current is [BHU 2005]

71. Symbolic representation of photodiode is [RPMT 1995] (a) /2 (b) 

(c) 2 (d) None of these
(a) (b)
79. A diode having potential difference 0.5 V across its junction which
does not depend on current, is connected in series with resistance
(c) (d) of 20  across source. If 0.1 A passes through resistance then what
72. To make a PN junction conducting [IIT-JEE 1994] is the voltage of the source
(a) The value of forward bias should be more than the barrier [DCE 2005]
potential (a) 1.5 V (b) 2.0 V
(b) The value of forward bias should be less than the barrier (c) 2.5 V (d) 5 V
potential
(c) The value of reverse bias should be more than the barrier
Junction Transistor
potential
(d) The value of reverse bias should be less than the barrier
1. When NPN transistor is used as an amplifier
potential
[AIEEE 2004]
73. Which is the wrong statement in following sentences? A device in
which P and N-type semiconductors are used is more useful then a (a) Electrons move from base to collector
vacuum type because [MP PET 1992] (b) Holes move from emitter to base
(a) Power is not necessary to heat the filament (c) Electrons move from collector to base
(b) It is more stable
(d) Holes move from base to emitter
(c) Very less heat is produced in it
2. The phase difference between input and output voltages of a CE
(d) Its efficiency is high due to a high voltage across the junction circuit is [MP PET 2004]
74. The depletion layer in silicon diode is 1 m wide and the knee (a) 0 o
(b) 90 o

potential is 0.6 V, then the electric field in the depletion layer will (c) 180 o
(d) 270 o

be
3. An oscillator is nothing but an amplifier with
(a) Zero
[MP PET 2004]
(b) 0.6 Vm –1

(a) Positive feed back (b) Large gain

(c) 6  10 V/m
4

(c) No feedback (d) Negative feedback

(d) 6  10 V/m
5
4. The emitter-base junction of a transistor is …… biased while the
collector-base junction is ……. biased
75. In the diagram, the input is across the terminals A and C and the
output is across the terminals B and D, then the output is [CBSE PMT 1994] [KCET 2004]

B (a) Reverse, forward (b) Reverse, reverse

(a) Zero
(c) Forward, forward (d) Forward, reverse
(b) Same as input
5. In an NPN transistor the collector current is 24 mA. If 80% of
(c) Full wave rectifier A C electrons reach collector its base current in mA is
(d) Half wave rectifier [Kerala PMT 2004]
76. The current through an ideal PN-junction shown in the following (a) 36 (b) 26
circuit diagram will be [AMUD1998] (c) 16 (d) 6
(a) Zero P N 100 6. A NPN transistor conducts when [CPMT 2003]
(b) 1 mA (a) Both collector and emitter are positive with respect to the base
1V 2V (b) Collector is positive and emitter is negative with respect to the
(c) 10 mA
base
(d) 30 mA
(c) Collector is positive and emitter is at same potential as the
77. If a full wave rectifier circuit is operating from 50 Hz mains, the
base
fundamental frequency in the ripple will be
(d) Both collector and emitter are negative with respect to the base
[UPSEAT 2000; CBSE PMT 2003; AIEEE 2005]
 1570 Electronics
7. In the case of constants  and  of a transistor 16. The transistors provide good power amplification when they are
used in [AMU 1999]
[CET 2003]
(a) Common collector configuration
(a)  =  (b)  < 1  > 1
(b) Common emitter configuration
(c)  = 1 (d)  > 1  < 1
(c) Common base configuration
8. Which of the following is true [DPMT 2002]
(d) None of these
(a) Common base transistor is commonly used because current
gain is maximum 17. The transfer ratio of a transistor is 50. The input resistance of the
(b) Common emitter is commonly used because current gain is transistor when used in the common-emitter configuration is 1 K.
maximum The peak value for an A.C input voltage of 0.01 V peak is [CBSE

(c) Common collector is commonly used because current gain is (a) 100 A (b) 0.01 mA
maximum
(c) 0.25 mA (d) 500 A
(d) Common emitter is the least used transistor
18. For a transistor the parameter  = 99. The value of the parameter 
9. If  = 0.98 and current through emitter i = 20 mA, the value of  is
e
is [Pb CET 1998]
[DPMT 2002]
(a) 0.9 (b) 0.99
(a) 4.9 (b) 49
(c) 96 (d) 9.6 (c) 1 (d) 9
19. A transistor is used in common emitter mode as an amplifier. Then [IIT-JE
lC
10. For a common base configuration of PNP transistor  0 .98 (a) The base-emitter junction is forward biased
lE
then maximum current gain in common emitter configuration will (b) The base-emitter junction is reverse biased
be [CBSE PMT 2002] (c) The input signal is connected in series with the voltage applied
(a) 12 (b) 24 to the base-emitter junction
(c) 6 (d) 5 (d) The input signal is connected in series with the voltage applied
11. In a PNP transistor working as a common-base amplifier, current to bias the base collector junction
gain is 0.96 and emitter current is 7.2 mA. The base current is [AFMC 2002;
20.Pb. PET a PNP transistor the base is the N-region. Its width relative to the
In 2002]
(a) 0.4 mA (b) 0.2 mA P-region is [DCE 1997]

(c) 0.29 mA (d) 0.35 mA (a) Smaller (b) Larger

12. If l1 , l2 , l3 are the lengths of the emitter, base and collector of a (c) Same (d) Not related
transistor then [KCET 2002]
21. A common emitter amplifier is designed with NPN transistor ( =
(a) l1  l2  l3 (b) l3  l2  l1 0.99). The input impedance is 1 K and load is 10 K. The voltage
gain will be [CPMT 1996]
(c) l3  l1  l2 (d) l3  l1  l2
(a) 9.9 (b) 99
13. In an NPN transistor circuit, the collector current is 10 mA. If 90%
of the electrons emitted reach the collector, the emitter current ( i ) (c) 990 (d) 9900
E

and base current (i ) are given by [KCET 2001]

B
22. The symbol given in figure represents [AMU 1995, 96]
(a) i = – 1 mA, i = 9 mA
E B
(a) NPN transistor
(b) i = 9 mA, i = – 1 mA E C
E B
(b) PNP transistor
(c) i = 1 mA, i = 11 mA
(c) Forward biased PN junction diode
E B

(d) i = 11 mA, i = 1 mA
E B

(d) Reverse biased NP junction diode B

14. In a common emitter transistor, the current gain is 80. What is
the change in collector current, when the change in base current 23. The most commonly used material for making transistor is
is 250 A [CBSE PMT 2000] [MNR 1995]

(a) 80  250 A (b) (250 – 80) A (a) Copper (b) Silicon

(c) (250 + 80) A (d) 250/80 A (c) Ebonite (d) Silver
15. Least doped region in a transistor [KCET 2000] 24. An NPN-transistor circuit is arranged as shown in figure. It is
(a) Either emitter or collector [BHU 1994]
(b) Base N
P RL
(c) Emitter N Vout
(d) Collector Vin
 Electronics 1571

lc la
(c) (d)
la lc
(a) A common base amplifier circuit 32. Which of these is unipolar transistor [Pb PMT 2004]
(b) A common emitter amplifier circuit (a) Point contact transistor (b) Field effect transistor
(c) A common collector amplifier circuit
(c) PNP transistor (d) None of these
(d) Neither of the above
33. For a transistor, in a common emitter arrangement, the alternating
25. The part of a transistor which is heavily doped to produce a large current gain  is given by [DPMT 2004]
number of majority carriers, is [CBSE PMT 1993]
 I   I 
(a) Base (b) Emitter (a)    C  (b)    B 
(c) Collector (d) None of these  I B  V
C
 IC  VC

26. For a transistor, the current amplification factor is 0.8. The  I   I 

transistor is connected in common emitter configuration. The (c)    C 
 (d)    E 
change in the collector current when the base current changes by 6  I E  VC  IC  VC

mA is [Haryana CET 1991]

34. The relation between  and  parameters of current gains for a
(a) 6 mA (b) 4.8 mA transistors is given by [Pb. PET 2000]

(c) 24 mA (d) 8 mA  
(a)   (b)  
27. In a common base amplifier circuit, calculate the change in base current 1 1
if that in the emitter current is 2 mA and  = 0.98 1 1
(c)   (d)  
[BHU 1995]  
(a) 0.04 mA (b) 1.96 mA 35. When NPN transistor is used as an amplifier [DCE 2002]

(c) 0.98 mA (d) 2 mA (a) Electrons move from base to emitter

28. In case of NPN-transistors the collector current is always less than (b) Electrons move from emitter to base
the emitter current because [AIIMS 1983]
(c) Electrons moves from base to emitter
(a) Collector side is reverse biased and emitter side is forward
biased (d) Holes moves from base to emitter
(b) After electrons are lost in the base and only remaining ones 36. In the CB mode of a transistor, when the collector voltage is
reach the collector changed by 0.5 volt. The collector current changes by 0.05 mA. The
(c) Collector side is forward biased and emitter side is reverse output resistance will be [Pb. PMT 2003]
biased
(a) 10 k (b) 20 k
(d) Collector being reverse biased attracts less electrons
(c) 5 k (d) 2.5 k
29. In a transistor circuit shown here the base current is 35 A. The
value of the resistor R is
b
37. Which of the following is used to produce radio waves of constant
E C amplitude [DCE 2004]
(a) Oscillator (b) FET
(a) 123.5 k
B (c) Rectifier (d) Amplifier
(b) 257 k Rb RL 38. While a collector to emitter voltage is constant in a transistor, the
(c) 380.05 k + – collector current changes by 8.2 mA when the emitter current
changes by 8.3 mA. The value of forward current ratio h is [KCET
(d) None of these 9V
fe

(a) 82 (b) 83
30. In a transistor, a change of 8.0 mA in the emitter current produces
a change of 7.8 mA in the collector current. What change in the (c) 8.2 (d) 8.3
base current is necessary to produce the same change in the 39. Consider an NPN transistor amplifier in common-emitter
collector current configuration. The current gain of the transistor is 100. If the
collector current changes by 1 mA, what will be the change in
(a) 50 A (b) 100 A emitter current [AIIMS 2005]

(c) 150 A (d) 200 A (a) 1.1 mA (b) 1.01 mA

(c) 0.01 mA (d) 10 mA
31. In a transistor configuration -parameter is
40. In a common base amplifier the phase difference between the input
[Orissa PMT 2004]
signal voltage and the output voltage is
lb lc [CBSE PMT 1990; AIEEE 2005]
(a) (b)
lc lb (a) 0 (b)  / 4
 1572 Electronics
(c)  /2 (d)  B 0 1 0 1
41. In NPN transistor the collector current is 10 mA. If 90% of electrons X 0 1 1 1
emitted reach the collector, then (a) NAND (b) OR
[Kerala PMT 2005]
(c) AND (d) XOR
(a) Emitter current will be 9 mA
4. The combination of ‘NAND’ gates shown here under (figure) are
(b) Emitter current will be 11.1 mA equivalent to [Haryana CEET 1996]
(c) Base current will be 0.1 mA
(d) Base current will be 0.01 mA
42. NPN transistor are preferred to PNP transistor because they have [J & K CET 2005] A
C
(a) Low cost
(b) Low dissipation energy B
(c) Capability of handing large power
(d) Electrons having high mobility than holes
43. In a transistor in CE configuration, the ratio of power gain to A C
voltage gain is [J & K CET 2005] B
(a)  (b)  / 
(a) An OR gate and an AND gate respectively
(c)  (d) 
(b) An AND gate and a NOT gate respectively
44. In the study of transistor as an amplifier, if   Ic / Ie and
  Ic / Ib , where Ic , Ib and I are the collector, base and emitter (c) An AND gate and an OR gate respectively
e

currents, then (d) An OR gate and a NOT gate respectively.

[CBSE PMT 2000; KCET 2000; Orissa JEE 2005]
5. A truth table is given below. Which of the following has this type of
1   truth table [CBSE PMT 1996; UPSEAT 2002]
(a)   (b) 
 1  A 0 1 0 1
 1  B 0 0 1 1
(c)   (d) 
1  
y 1 0 0 0
Digital Electronics (a) XOR gate (b) NOR gate
1. Given below are symbols for some logic gates (c) AND gate (d) OR gate
6. The truth table shown in figure is for [Pb. CET 1998]

(1) (2)
A 0 0 1 1
B 0 1 0 1
Y 1 0 0 1
(3) (4) (a) XOR (b) AND
The XOR gate and NOR gate respectively are [AFMC 1994] (c) XNOR (d) OR
(a) 1 and 2 (b) 2 and 3 7. For the given combination of gates, if the logic states of inputs A, B,
(c) 3 and 4 (d) 1 and 4 C are as follows A = B = C = 0 and A = B = 1, C = 0 then the logic
2. Given below are four logic gate symbol (figure). Those for OR, NOR states of output D are
and NAND are respectively [NSEP 1994] (a) 0, 0
A
y y (b) 0, 1 B
A A G2
G1 D
B B (c) 1, 0
(1) (2) C
(d) 1, 1
A y A y 8. Boolean algebra is essentially based on [AIIMS 1999]
B B
(3) (4) (a) Truth (b) Logic
(c) Symbol (d) Numbers
(a) 1, 4, 3 (b) 4, 1, 2 9. The logic behind ‘NOR’ gate is that it gives
(c) 1, 3, 4 (d) 4, 2, 1 [CPMT 1999, AFMC 1999]
3. The following truth table corresponds to the logic gate (a) High output when both the inputs are low
[BHU 1994; CPMT 2000; J & K CET 2004] (b) Low output when both the inputs are low
A 0 0 1 1 (c) High output when both the inputs are high
 Electronics 1573
(d) None of these
(c) C = A B (d) C  A  B
10. A logic gate is an electronic circuit which [BHU 2000]
19. This symbol represents [CBSE PMT 1996]
(a) Makes logic decisions
(b) Allows electrons flow only in one direction (a) NOT gate
(c) Works binary algebra (b) OR gate A
(d) Alternates between 0 and 1 values Y
(c) AND gate
B
11. A gate has the following truth table [CBSE PMT 2000] (d) NOR gate
P 1 1 0 0
20. Which logic gate is represented by following diagram
Q 1 0 1 0
R 1 0 0 0 [DCE 2001]

The gate is (a) AND

(a) NOR (b) OR (b) OR
(c) NAND (d) AND
(c) NOR
12. How many NAND gates are used to form an AND gate
(d) XOR
[MP PET 2004]
(a) 1 (b) 2
(c) 3 (d) 4 21. Symbol represents [Kerala PMT 2001]
13. Which of the following gates will have an output of 1
[CBSE PMT 1998]
(a) NAND gate (b) NOR gate
(a) 1 (b) 0
0 (c) NOT gate (d) XNOR gate
1
22. To get an output 1 from the circuit shown in the figure, the input
must be [UPSEAT 2002]
(c) 0 (d) 0
(a) A  0, B  1, C  0
1 1 A
B
(b) A  1, B  0, C  0
14. Which represents NAND gate [DCE 2002]
(c) A  1, B  0, C  1
C
(a) (b) (d) A  1, B  1, C  0

23. The combination of the gates shown in the figure below produces [DCE 2
(c) (d)
(a) NOR gate A
A
15. The given truth table is of [AMU 1998; J & K CET 2002]
(b) OR gate Y
(c) AND gate B
A X
(d) XOR gate B
0 1
24. The output of a NAND gate is 0 [UPSEAT 2004]
1 0
(a) If both inputs are 0
(a) OR gate (b) AND gate (b) If one input is 0 and the other input is 1
(c) NOT gate (d) None of above (c) If both inputs are 1
16. What will be the input of A and B for the Boolean expression (d) Either if both inputs are 1 or if one of the inputs is 1 and the
( A  B)  ( A  B)  1 [TNPCEE 2002] other 0
25. A gate in which all the inputs must be low to get a high output is
(a) 0, 0 (b) 0, 1
called [UPSEAT 2004]
(c) 1, 0 (d) 1, 1 (a) A NAND gate (b) An inverter
17. If A and B are two inputs in AND gate, then AND gate has an (c) A NOR gate (d) An AND gate
output of 1 when the values of A and B are
26. Which logic gate is represented by the following combination of
[TNPCEE 2002] logic gates [AIIMS 2004]
(a) A = 0, B = 0 (b) A = 1, B = 1
(c) A = 1, B = 0 (d) A = 0, B = 1 A
Y
18. The Boolean equation of NOR gate is [Haryana CET 2002]
B
(a) C = A + B (b) C  A  B
(a) OR (b) NAND
 1574 Electronics
(c) AND (d) NOR 5. The grid voltage of any triode valve is changed from –1 volt to – 3
27. The output of OR gate is 1 [CBSE PMT 2004] volt and the mutual conductance is 3  10 4 mho. The change in
(a) If both inputs are zero plate circuit current will be [MNR 1999]

(b) If either or both inputs are 1 (a) 0.8 mA (b) 0.6 mA

(c) Only if both input are 1 (c) 0.4 mA (d) 1 mA
(d) If either input is zero
6. In a triode, gm  2  10 3 ohm 1 ;   42 , resistance load,
28. Which gates is represented by this figure [DCE 2003]
R  50 kilo ohm. The voltage amplification obtained from this
(a) NAND gate triode will be [MNR 1999]
(b) AND gate A (a) 30.42 (b) 29.57
Y
(c) NOT gate B
(c) 28.18 (d) 27.15
(d) OR gate
7. In an amplifier the load resistance R L is equal to the plate
29. Sum of the two binary numbers (1000010)2 and (11011)2 is [DCE 2004]
resistance (rp ) . The voltage amplification is equal to
(a) (111101)2 (b) (111111)2
[CPMT 1995]
(c) (101111)2 (d) (111001)2 (a)  (b) 2 
30. The truth-table given below is for which gate (c)  / 2 (d)  / 4
[CBSE PMT 1994, 98 2002; DPMT 2002; BCECE 2005]
8. For a given plate-voltage, the plate current in a triode is maximum
A 0 0 1 1 when the potential of
B 0 1 0 1 [IIT-JEE 1985; CPMT 1995; AFMC 1999]
C 1 1 1 0 (a) The grid is positive and plate is negative
(a) XOR (b) OR (b) The grid is positive and plate is positive
(c) AND (d) NAND (c) The grid is zero and plate is positive
31. Which of the following logic gate is an universal gate (d) The grid is negative and plate is positive
[AIIMS 2005]
(a) OR (b) NOT
(c) AND (d) NOR

Valve Electronics (Diode and Triode)

1. Thermionic emission from a heated filament varies with its
temperature T as
[CBSE PMT 1990; RPMT 2000; CPMT 2002]
1
(a) T (b) T
2
(c) T (d) T 3 / 2
2. Number of secondary electrons emitted per number of primary
electrons depends on [RPET 2000]
(a) Material of target
(b) Frequency of primary electrons
(c) Intensity
(d) None of the above
3. Due to S.C.R in vacuum tube [RPET 2000]

(a) Ip  Decrease (b) Ip  Increase

(c) Vp  Increase (d) Vg  Increase

4. In diode, when there is saturation current, the plate resistance (rp )

is [AIIMS 1997; Haryana PMT 2000]
(a) Zero (b) Infinite
(c) Some finite quantity (d) Data is insufficient
 1576 Electronics

9. If R p  7 K, gm  2.5 millimho, then on increasing plate voltage (a) Filament voltage (b) Plate voltage
(c) Plate resistance (d) Plate current
by 50 V , how much the grid voltage is changed so that plate
19. In a triode valve [MP PET 1992]
current remains the same [RPET 1996]
(a) If the grid voltage is zero then plate current will be zero
(a) – 2.86 V (b) – 4 V
(b) If the temperature of filament is doubled, then the thermionic
(c) + 4 V (d) + 2 V current will also be doubled
10. The amplification factor of a triode is 20 and trans-conductance is 3 (c) If the temperature of filament is doubled, then the thermionic
milli mho and load resistance 3  10 4  , then the voltage gain is current
[RPMTwill nearly be four times
1996]
(a) 16.36 (b) 28 (d) At a definite grid voltage the plate current varies with plate
voltage according to Ohm’s law
(c) 78 (d) 108
20. The amplification factor of a triode valve is 15. If the grid voltage is
11. In a triode amplifier,   25, rp  40 kilo ohm and load resistance changed by 0.3 volt the change in plate voltage in order to keep the
RL  10 kilo ohm. If the input signal voltage is 0.5 volt, then plate current constant (in volt) is
[CPMT 1990]
output signal voltage will be [RPMT 1995]
(a) 0.02 (b) 0.002
(a) 1.25 volt (b) 5 volt
(c) 4.5 (d) 5.0
(c) 2.5 volt (d) 10 volt
21. The slope of plate characteristic of a vacuum tube diode for certain
12. The amplification factor of a triode is 20. If the grid potential is
mA
reduced by 0.2 volt then to keep the plate current constant its plate operating point on the curve is 10  3 . The plate resistance of
V
voltage is to be increased by
the diode and its nature respectively
[RPMT 1993, 95]
[MP PMT 1990]
(a) 10 volt (b) 4 volt (a) 100 kilo-ohms static (b) 1000 kilo-ohms static
(c) 40 volt (d) 100 volt (c) 1000 kilo-ohms dynamic (d) 100 kilo-ohms dynamic
13. For a triode rp  10 kilo ohm and gm  3 milli mho. If the load 22. A triode has a mutual conductance of 2  10 3 mho and an
resistance is double of plate resistance, then the value of voltage amplification factor of 50. The anode is connected through a
gain will be [RPMT 1994] resistance of 25  10 3 ohms to a 250 volts supply. The voltage
(a) 10 (b) 20 gain of this amplifier is [MP PMT 1989]
(c) 15 (d) 30 (a) 50 (b) 25
14. The amplification produced by a triode is due to the action of (c) 100 [AFMC 1994] (d) 12.5
(a) Filament (b) Cathode 23. 14  10 15
electrons reach the anode per second. If the power
(c) Grid (d) Plate consumed is 448 milliwatts, then the plate (anode) voltage is [MP PM
(a) 150 V (b) 200V
15. In an experiment, the saturation in the plate current in a diode is
observed at 240V. But a student still wants to increase the plate (c) 14  448 V (d) 448/14V
current. It can be done, if [MNR 1994] 24. In the circuit of a triode valve, there is no change in the plate
(a) The plate voltage is increased further current, when the plate potential is increased from 200 volt to 220
volt and the grid potential is decreased from – 0.5 volt to –1.3 volt.
(b) The plate voltage is decreased
The amplification factor of this valve is
(c) The filament current is decreased [MP PMT 1989]
(d) The filament current is increased (a) 15 (b) 20
16. In a triode amplifier, the value of maximum gain is equal to (c) 25 (d) 35
[MP PMT 1992] 25. If the amplification factor of a triode () is 22 and its plate
(a) Half the amplification factor resistance is 6600 ohm, then the mutual conductance of this valve
is mho is [MP PMT 1989]
(b) Amplification factor
(c) Twice the amplification factor 1
(a) (b) 25  10 2
(d) Infinity 300

17. For a given triode   20 . The load resistance is 1.5 times the (c) 2.5  10 2 (d) 0.25  10 2
anode resistance. The maximum gain will be 26. For a triode, at Vg  1 volt, the following observations were taken
[CPMT 1992]
Vp  75 V, Ip  2mA , Vp  100V, Ip  4 mA . The value of
(a) 16 (b) 12
plate resistance will be [MP PMT 1989]
(c) 10 (d) None of the above
18. The voltage gain of a triode depends upon [CPMT 1992] (a) 25 k (b) 20.8 k
 Electronics 1577

(c) 12.5 k (d) 100 k 36. Following is the relation between current and charge
27. The triode constant is out of the following [RPMT 1989] I  AT 2e qt / VL then value of V will be L
[RPMT 2000]

(a) Plate resistance (b) Amplification factor V kV

(a) (b)
(c) Mutual conductance (d) All the above kT T
28. The unit of mutual conductance of a triode valve is kT VT
(c) (d)
V k
[MP PMT 1988]
37. Which one is correct relation for thermionic emission
(a) Siemen (b) Ohm
[RPMT 2000]
(c) Ohm metre (d) Joule Coulomb –1

1 / 2  / kT 2  / kT
(a) J  AT e (b) J  AT e
29. With a change of load resistance of a triode, used as an amplifier,
3 / 2  / kT
from 50 kilo ohms to 100 kilo ohms, its voltage amplification (c) J  AT e (d) J  AT 2e  / 2kT
changes from 25 to 30. Plate resistance of the triode is [MP PET 1986]
38. When plate voltage in diode valve is increased from 100 volt to 150 volt
(a) 25 k (b) 75 k then plate current increases from 7.5 mA to 12 mA. The dynamic plastic
resistance will be [RPMT 2000]
(c) 7.5 k (d) 2.5 k
30. Select the correct statements from the following (a) 10 k (b) 11 k
[IIT-JEE 1984] (c) 15 k (d) 11.1 k
(a) A diode can be used as a rectifier 39. In a diode valve, the state of saturation can be obtained easily by [RPET 1998; RPMT
(b) A triode cannot be used as a rectifier (a) High plate voltage and high filament current
(c) The current in a diode is always proportional to the applied (b) Low filament current and high plate voltage
voltage (c) Low plate voltage and high cathode temperature
(d) The linear portion of the I–V characteristic of a triode is used (d) High filament current and high plate voltage
for amplification without distortion
40. Plate resistance of two triode valves is 2 K and 4 K,
31. The introduction of a grid in a triode valve affects plate current by [CPMT factor
amplification 1975, 90]
of each of the valves is 40. The ratio of voltage
(a) Making the thermionic emission easier at low temperature amplification, when used with 4 K load resistance, will be [RPET
(b) Releasing more electrons from the plate 4
(a) 10 (b)
(c) By increasing plate voltage 3
(d) By neutralising space charge 3 16
(c) (d)
32. Before the saturation state of a diode at the plate voltages of 400 V 4 3
and 200 V respectively the currents are i and i respectively. The
1 2 41. Diode is used as a/an [AIIMS 1999]
ratio i /i will be
(a) Oscillator (b) Amplifier
1 2

(a) 2 /4 (b) 2 2 (c) Rectifier (d) Modulator

(c) 2 (d) 1/2 42. The electrical circuits used to get smooth d.c. output from a rectifier
33. The value of plate current in the given circuit diagram will be circuit is called [KCET 2000]
(a) 3 mA P IP (a) Filter (b) Amplifier
RL
(b) 8 mA (c) Full wave rectifier (d) Oscillator
+
(c) 13 mA 43. Which of the following does not vary with plate or grid voltages [BHU (
1.112 A 1.125 A
(d) 18 mA + – (a) g (b) R
m p

2V
34. Coating of strontium oxide on Tungsten cathode in a valve is good (c)  (d) Each of them varies
for thermionic emission because [RPMT 1998]
44. The grid in a triode valve is used [UPSEAT 2000]
(a) Work function decreases
(a) To increases the thermionic emission
(b) Work function increases
(c) Conductivity of cathode increases (b) To control the plate to cathode current

(d) Cathode can be heated to high temperature (c) To reduce the inter-electrode capacity
35. Correct relation for triode is [RPMT 2000] (d) To keep cathode at constant potential
gm 45. In a triode valve the amplification factor is 20 and mutual
(a)   gm  rp (b) 
rp conductance is 10 mho. The plate resistance is
–3

[UPSEAT 2000]
(c)   2 gm  rp (d) None of these
(a) 2  10  3
(b) 4  10 3
 1578 Electronics
(c) 2  10  4
(d) 2  10  4 [RPET 2002]
(a) 40 (b) 45
46. The thermionic emission of electron is due to
(c) 33.3 (d) 25
[UPSEAT 2000]
56. The current in a triode at anode potential 100 V and grid potential –
(a) Electromagnetic field (b) Electrostatic field 1.2 V is 7.5 mA. If grid potential is changed to – 2.2 V, the current
becomes 5.5 mA. the value of trans conductance (g ) will be [RPMT
(c) High temperature (d) Photoelectric effect m

(a) 2 mili mho (b) 3 mili mho

47. The amplification factor of a triode is 50. If the grid potential is (c) 4 mili mho (d) 0.2 mili mho
decreased by 0.20 V, what increase in plate potential will keep the
57. Select the correct statement [RPMT 2003]
plate current unchanged [RPMT 1999]
(a) In a full wave rectifier, two diodes work alternately
(a) 5 V (b) 10 V
(b) In a full wave rectifier, two diodes work simultaneously
(c) 0.2 V (d) 50 V (c) The efficiency of full wave and half wave rectifiers is same
48. The slope of plate characteristic of a vacuum diode is (d) The full wave rectifier is bi-directional
2  10 2 mA / V . The plate resistance of diode will be 58. The amplification factor of a triode is 20. Its plate resistance is 10
kilo ohms. Mutual conductance is
[RPMT 1999] [MNR 1992; Orissa JEE 2005]
(a) 50  (b) 50 k (a) 2  10 mho
5
(b) 2  10 4 mho
(c) 500 k (d) 500 k (c) 500 mho (d) 2  10 3 mho
49. The transconductance of a triode amplifier is 2.5 mili mho having
plate resistance of 20 K, amplification 10. Find the load resistance [RPMT 2001]

(a) 5 k (b) 25 k

(c) 20 k (d) 50 k
50. The amplification factor of a triode is 18 and its plate resistance is 8
 10 . A load resistance of 10  is connected in the plate circuit.
3 4

The voltage gain will be

[RPMT 2002]
(a) 30 (b) 20
(c) 10 (d) 1
51. The ripple factor in a half wave rectifier is [RPMT 2002]
(a) 1.21 (b) 0.48
(c) 0.6 (d) None of these
52. The correct relation for a triode is [RPET 2000, 02]

Ip I p
(a) gm  (b) gm 
Vp Vg
Vg  constt . Vp  constt .

(c) Both (d) None of these

53. In a diode valve the cathode temperature must be ( = work
function) [RPET 2002]
(a) High and  should be high
(b) High and  should be low
(c) Low and  should be high
(d) Low and  should be high
54. The plate resistance of a triode is 2.5  10  and mutual 4

conductance is 2  10 mho. What will be the value of amplification

–3

factor [RPET 2002]

(a) 50 (b) 1.25  10 7

(c) 75 (d) 2.25  10 7

55. Plate voltage of a triode is increased from 200 V to 225 V. To

maintain the plate current, change in grid voltage from 5 V to 5.75 V
is needed. The amplification factor is
 Electronics 1579
(b) 2 mA
(c) 2.5 mA
(d) 3 mA
8. A P-type semiconductor has acceptor levels 57 meV above the
valence band. The maximum wavelength of light required to create a
1. A silicon speciman is made into a P-type semi-conductor by hole is (Planck’s constant h = 6.6  10 34 J-s) [MP PE
dopping, on an average, one Indium atom per 5  107 silicon atoms. (a) 57 Å (b) 57  10 3
Å
If the number density of atoms in the silicon specimen is
5  10 28 atoms / m 3 then the number of acceptor atoms in silicon (c) 217100 Å (d) 11.61  10 33 Å
per cubic centimetre will be 9. Current in the circuit will be [CBSE PMT 2001]
[MP PMT 1993, 2003]
5
(a) A
(a) 2.5  10 30 atoms / cm 3 (b) 1.0  1013 atoms / cm 3 40 20 
(c) 1.0  1015 atoms / cm 3 (d) 2.5  10 36 atoms / cm 3 5
(b) A
50 30 
2. The probability of electrons to be found in the conduction band of
an intrinsic semiconductor at a finite temperature 5 i
(c) A
[IIT-JEE 1995; DPMT 2004] 10
(a) Decreases exponentially with increasing band gap 5 20  5V
(d) A
(b) Increases exponentially with increasing band gap 20
(c) Decreases with increasing temperature 10. The diode used in the circuit shown in the figure has a constant
(d) Is independent of the temperature and the band gap voltage drop of 0.5 V at all currents and a maximum power rating
of 100 milliwatts. What should be the value of the resistor R,
3. The typical ionisation energy of a donor in silicon is connected in series with the diode for obtaining maximum current [CBSE PMT 1997]
[IIT-JEE 1992]
R 0.5 V
(a) 10.0 eV (b) 1.0 eV (a) 1.5 
(c) 0.1 eV (d) 0.001 eV (b) 5 
5
4. In PN-junction diode the reverse saturation current is 10 amp (c) 6.67 
at 27C. The forward current for a voltage of 0.2volt is [MP PMT 1993]
(d) 200  1.5 V
3 3
(a) 2037.6  10 amp (b) 203.76  10 amp
11. For a transistor amplifier in common emitter configuration for load
(c) 20.376  10 3 amp (d) 2.0376  10 3 amp impedance of 1 k (h = 50 and h = 25 A/V) the current gain is
fe oe
[AIEEE
23
[exp(7.62)  2038.6, K  1.4  10 J / K] (a) – 5.2 (b) – 15.7
5. When a potential difference is applied across, the current passing (c) – 24.8 (d) – 48.78
through [IIT-JEE 1999]
12. In the following common emitter configuration an NPN transistor
(a) An insulator at 0 K is zero with current gain  = 100 is used. The output voltage of the
(b) A semiconductor at 0 K is zero amplifier will be [AIIMS 2003]

(c) A metal at 0 K is finite

(d) A P-N diode at 300 K is finite, if it is reverse biased (a) 10 mV
6. A 2V battery is connected across the points A and B as shown in the (b) 0.1 V 10K
figure given below. Assuming that the resistance of each diode is 1K
1mV Vout
zero in forward bias and infinity in reverse bias, the current supplied (c) 1.0 V
by the battery when its positive terminal is connected to A is [UPSEAT 2002]
(d) 10 V
10 
13. In semiconductor the concentrations of electrons and holes are 8 
(a) 0.2 A
10 /m and 5  10 /m respectively. If the mobilities of electrons and
18 3 18

10 
(b) 0.4 A hole are 2.3 m /volt-sec and 0.01 m /volt-sec respectively, then
2 2

semiconductor is
(c) Zero
(a) N-type and its resistivity is 0.34 ohm-metre
(d) 0.1 A
A B (b) P-type and its resistivity is 0.034 ohm-metre
7. In the circuit, if the forward voltage drop for the diode is 0.5 V, the
current will be [UPSEAT 2003] (c) N-type and its resistivity is 0.034 ohm-metre
0.5V (d) P-type and its resistivity is 3.40 ohm-metre
(a) 3.4 mA

8V 2.2K
 1580 Electronics
14. A sinusoidal voltage of peak value 200 volt is connected to a diode (c) 21.2 Å (d) None of these
and resistor R in the circuit shown so that half wave rectification
20. In the following circuits PN-junction diodes D , D and D are ideal
occurs. If the forward resistance of the diode is negligible compared 1 2 3

to R the rms voltage (in volt) across R is approximately for the following potential of A and B, the correct increasing order
of resistance between A and B will be

D1 R

D2 R
E0= 200 Volt R
(a) 200 (b) 100 D3 R
200 R R
(c) (d) 280
2 4 4

15. The junction diode in the following circuit requires a minimum (i) – 10 VA, – 5V (ii) – 5V, – 10 V B
current of 1 mA to be above the knee point (0.7 V) of its I-V
characteristic curve. The voltage across the diode is independent of (iii) – 4V, – 12V
current above the knee point. If V = 5 V, then the maximum value
B

of R so that the voltage is above the knee point, will be (a) (i) < (ii) < (iii) (b) (iii) < (ii) < (i)
R 0.7 V (c) (ii) = (iii) < (i) (d) (i) = (iii) < (ii)
21. The circuit shown in following figure contains two diode D and D 1 2

each with a forward resistance of 50 ohms and with infinite

backward resistance. If the battery voltage is 6 V, the current
through the 100 ohm resistance (in amperes) is
VB [IIT-JEE 1997]
150
(a) 4.3 k (b) 860 k
(c) 4.3  (d) 860  D1
50
16. In the circuit given below, V(t) is the sinusoidal voltage source,
voltage drop V (t) across the resistance R is
AB
D2
[IIT 1993] 100
D1 D2 6V

(a) Zero (b) 0.02

R VAB (c) 0.03 (d) 0.036
R1=100  R2=150 
22. Find V AB
[RPMT 2000]
V ( t)
(a) 10 V
(a) Is half wave rectified
(b) 20 V 10
(b) Is full wave rectified 30V
(c) Has the same peak value in the positive and negative half cycles
(c) 30 V
(d) Has different peak values during positive and negative half VAB 10 10
cycle (d) None of these
17. The peak voltage in the output of a half-wave diode rectifier fed
23. A diode is connected to 220 V (rms) ac in series with a capacitor as
with a sinusoidal signal without filter is 10 V. The dc component of
shown in figure. The voltage across the capacitor is
the output voltage is [CBSE PMT 2004]
(a) 220 V
(a) 10 / 2 V (b) 10/ V
(b) 110 V
(c) 10 V (d) 20/ V 220 V C
(c) 311.1 V ac
18. A transistor is used as an amplifier in CB mode with a load
resistance of 5 k  the current gain of amplifier is 0.98 and the (d)
220
V
input resistance is 70 , the voltage gain and power gain 2
respectively are [Pb. PET 2003]
24. A potential difference of 2V is applied between the opposite faces of
(a) 70, 68.6 (b) 80, 75.6 a Ge crystal plate of area 1 cm and thickness 0.5 mm. If the
2

(c) 60, 66.6 (d) 90, 96.6 concentration of electrons in Ge is 2  10 /m and mobilities of
19 3

19. The Bohr radius of the fifth electron of phosphorus (atomic number m2 m2
electrons and holes are 0 .36 and 0 .14
= 15) acting as dopant in silicon (relative dielectric constant = 12) is volt  sec volt  sec
(a) 10.6 Å (b) 0.53 Å respectively, then the current flowing through the plate will be
 Electronics 1581
(a) 0.25 A (b) 0.45 A (c) 2 mA, 25 (d) 2.25 mA, 100
(c) 0.56 A (d) 0.64 A 31. The following configuration of gate is equivalent to
25. The contribution in the total current flowing through a
[AMU 1999]
3 1 OR
semiconductor due to electrons and holes are and (a) NAND
4 4 A
B AND
5 (b) XOR G1 Y
respectively. If the drift velocity of electrons is times that of
2 (c) OR NAND
G3
holes at this temperature, then the ratio of concentration of
(d) None of these
electrons and holes is G2
(a) 6 : 5 (b) 5 : 6 32. Figure gives a system of logic gates. From the study of truth table it
(c) 3 : 2 (d) 2 : 3 can be found that to produce a high output (1) at R, we must have
26. Ge and Si diodes conduct at 0.3 V and 0.7 V respectively. In the (a) X = 0, Y = 1
following figure if Ge diode connection are reversed, the valve of V 0 (b) X = 1, Y = 1 X
changes by [Based on Roorkee 2000] P
(c) X = 1, Y = 0 Y R
Ge
(d) X = 0, Y = 0
V0 33. The combination of gates shown below produces O

12 V (a) AND gate A G 1

Si 5 k
(b) XOR gate Y
G 3
G 4

(c) NOR gate

(a) 0.2 V (b) 0.4 V B G
(d) NAND gate 2

(c) 0.6 V (d) 0.8 V

34. The shows two NAND gates followed by a NOR gate. The system is
27. In the circuit shown in figure the maximum output voltage V is 0
equivalent to the following logic gate
+
Vi D1 D2 A X
(a) OR
10 V
2 k
T (b) AND Z
0 + – B
T/2 t V0
2 k (c) NAND
2 k
(a) 0 V (b) 5 V (d) None of these
– C Y
5 35. The diagram of a logic circuit is given below. The output F of the
(c) 10 V (d) V
2 circuit is represented by
28. In the following circuit find I and I
1 2 (a) W .( X  Y ) W
X
2 k
(a) 0, 0 i2 (b) W  (X  Y )
F
(b) 5 mA, 5 mA (c) W  (X  Y )
10 V W
(c) 5 mA, 0 14k 12k Y
(d) W  (X  Y )
(d) 0, 5 mA i1

29. For the transistor circuit shown below, if  = 100, voltage drop 36. The plate current i p
in a triode valve is given
between emitter and base is 0.7 V then value of V will be CE
ip  K(Vp   Vg )3 / 2 where i is in milliampere and V and V are
p p g

in volt. If r = 10 ohm, and g m  5  10 3 mho , then for

p
4

100  ip  8 mA and Vp  300 volt, what is the value of K and grid

(a) 10 V
C cut off voltage [Roorkee 1992]
(b) 5 V 8.6 k
18 V
(c) 13 V
VCE (a) – 6V, (30) 3/2
(b)  6V , (1 / 30) 3/2
B
(d) 0 V E (c) + 6V, (30) 3/2
(d) + 6V, (1/30) 3/2

30. In NPN transistor, 10 electrons5 enters

10
in emitter region in 10 sec. If –6 37. The linear portions of the characteristic curves of a triode valve give
V the following readings [Roorkee 1985]
2% electrons are lost in base region then collector current and
current amplification factor () respectively are Vg (volt) 0 –2 –4 –6
(a) 1.57 mA, 49 (b) 1.92 mA, 70
 1582 Electronics

Ip (mA ) for Vp  150 volts 15 12.5 10 7.5 (c) 20, 6 k, 16.7 m mho (d) None of these
44. A triode whose mutual conductance is 2.5 m A/volt and anode
Ip (mA ) for Vp  120 volts 10 7.5 5 2.5
resistance is 20 kilo ohm, is used as an amplifier whose amplification
The plate resistance is is 10. The resistance connected in plate circuit will be [MP PET 1989; RPMT 1998]
(a) 2000 ohms (b) 4000 ohms (a) 1 k (b) 5 k
(c) 8000 ohms (d) 6000 ohms
(c) 10 k (d) 20 k
38. The relation between dynamic plate resistance (r ) of a vacuum
p

diode and plate current in the space charge limited region, is 45. In the grid circuit of a triode a signal E  2 2 cos t is applied.
(a) rp  Ip (b) rp  Ip3 / 2 If  = 14 and r =10 k then root mean square current flowing
p

through RL  12 k  will be
1 1
(c) rp  (d) rp  (a) 1.27 mA (b) 10 mA
Ip (I p )1 / 3
39. The relation between I and V for a triode is (c) 1.5 mA (d) 12.4 mA
p p

Ip  (0.125 Vp  7.5) mA 46. For a triode  = 64 and g =1600  mho. It is used as an amplifier
m

and an input signal of 1V (rms) is applied. The signal power in the

Keeping the grid potential constant at 1V, the value of r will be p
load of 40 k will be
(a) 8 k (b) 4 k
(a) 23.5 mW (b) 48.7 mW
(c) 2 k (d) 8 k (c) 25.6 mW (d) None of these
40. An alternating voltage of 141.4V (rms) is applied to a vacuum diode
47. Amplification factor of a triode is 10. When the plate potential is 200
as shown in the figure. The maximum potential difference across the
condenser will be volt and grid potential is – 4 volt, then the plate current of 4mA is
observed. If plate potential is changed to 160 volt and grid potential
(a) 100 V is kept at – 7 volt, then the plate current will be
P
(a) 1.69 mA (b) 3.95 mA
(b) 200 V
141.4 (c) 2.87 (d) 7.02 mA
K F F
(c) 100 2 V ac (rms) 48. On applying a potential of – 1 volt at the grid of a triode, the
following relation between plate voltage V (volt) and plate current
RL
p

C Ip (in mA ) is found
(d) 200 2 V

41. A metallic surface with work function of 2 eV, on heating to a Ip  0.125 Vp  7.5
temperature of 800 K gives an emission current of 1 mA. If another
metallic surface having the same surface area, same emission If on applying – 3 volt potential at grid and 300 V potential at plate,
constant but work function 4 eV is heated to a temperature of 1600 the plate current is found to be 5mA, then amplification factor of
K, then the emission current will be the triode is

(a) 1 mA (b) 2 mA (a) 100 (b) 50

(c) 4 mA (d) None of these (c) 30 (d) 20
42. A change of 0.8 mA in the anode current of a triode occurs when 49. The slopes of anode and mutual characteristics of a triode are 0.02
the anode potential is changed by 10 V. If  = 8 for the triode, then mA V and 1 mA V respectively. What is the amplification factor of
–1 –1

what change in the grid voltage would be required to produce a the valve [MP PMT 1990]
change of 4 mA in the anode current
(a) 5 (b) 50
(a) 6.25 V (b) 0.16 V
(c) 500 (d) 0.5
(c) 15.2 V (d) None of these
50. The voltage gain of the following amplifier is [AIIMS 2005]
43. The plate current in a triode is given by

Ip  0.004 (Vp  10 Vg )3 / 2 mA 100k

where I , V and V are the values of plate current, plate voltage and 1k
p p g

–
grid voltage, respectively. What are the triode parameters , r and g p m +
for the operating point at Vp  120 volt and Vg   2 volt ? Vi
10k Vo

(a) 10, 16.7 k, 0.6 m mho (b) 15, 16.7 k, 0.06 m mho
(a) 10 (b) 100
 Electronics 1583
(c) 1000 (d) 9.9

Graphical Questions
1. The temperature (T) dependence of resistivity () of a
semiconductor is represented by [AIIMS 2004]
(a)  (b) 

O T O T
(c) (d)
 

O T O T

2. In a forward biased PN-junction diode, the potential barrier in the

depletion region is of the form … [KCET 2004]
V V

(a) (b)

p n p n

V V

(c) (d)

p n p n
3. Different voltages are applied across a P-N junction and the currents
are measured for each value. Which of the following graphs is
obtained between voltage and current
[MP PET 1996; UPSEAT 2002]
I I
(a) (b)

–V +V –V +V

I I
(c) (d)

–V +V –V +V
 1584 Electronics
4. If the following input signal is sent through a PN-junction diode,
then the output signal across R will beL
+5V
10 V (a) (b) O
P N
0V – 5V
RL O

(c) (d)
–10 V + 5V O t
20 V
(a) (b)
– 10 V O t – 5V

9. A full wave rectifier circuit along with the input and output voltages
(c) 10 V (d) is shown in the figure
– 20 V
5. The curve between charge density and distance near P-N junction 1
will be Output
2 voltage
Charge Charge
density density
N P N Input
P voltage
(a) (b) Distance
Distance

Charge Charge Output

voltage A B C D
density density
N N The contribution to output voltage from diode – 2 is
P P [MP PMT 2001]
(c) (d)
Distance Distance (a) A, C (b) B, D
(c) B, C (d) A, D
6. The resistance of a germanium junction diode whose V  I is 10. A source voltage of 8V drives the diode in fig. through a current-
limiting resistor of 100 ohm. Then the magnitude of the slope load
shown in figure is (Vk  0.3 V ) I line on the V-I characteristics of the diode is
10mA
(a) 5 k (a) 0.01
(b) 0.2 k (b) 100 –
8V
(c) 2.3 k (c) 0.08 +
 10  
(d) 12.5
(d)  k  V
 2.3  Vk 2.3V 100 
11. The i-V characteristic of a P-N junction diode is shown below. The
7. In the half-wave rectifier circuit shown. Which one of the following approximate dynamic resistance of the P-N junction when a forward
wave forms is true for VCD , the output across C and D? bias of 2volt is applied
i (mA)
(a) 1  800
A C
(b) 0.25 
400
P Q VCD RL
(c) 0.5 
B D (d) 5  2 2.1 V (volt)
(a) (b)
12. The given figure shows the wave forms for two inputs A and B and
that for the output Y of a logic circuit. The logic circuit is
(A)
(c) (d)

8. The output in the circuit of figure is taken across a capacitor. It is as O T1 T2 T3 T4 t

shown in figure
(B)
+5V
10F O T1 T2 T3 T4 t
1k Vo
O

–5V
O T1 T2 T3 T4 t
 Electronics 1585
(Y)

(a) An AND gate (b) An OR gate

(c) A NAND gate (d) An NOT gate J/T2 J/T2
(c) (d)
13. In a negative logic the following wave form corresponds to the
voltage

10 volt
1/T 1/T
5 volt 18. The mutual characteristic of triode is
IP VP
(a) Vg=constant (b)
5 10 15 20 25 30 35 40 45 50 Vg=constant
(a) 0000000000 Time s
(b) in0101101000
(c) 1111111111 (d) 1010010111
14. The variation of anode current in a triode corresponding to a change VP IP
in grid potential at three different values of the plate potential is IP
(c) (d) IP
shown in the diagram. The mutual conductance of the triode is [CPMT 1986, 88] Vg=constant
VP=constant
Ip(mA)
Vp = 100V
25
Vp = 80V
20 Vp = 60V
Vg Vg
19. The value of amplification factor from the following graph will be
15
Vp
100 V
80 V
– 6V – 4V – 2V 0
(a) 2.5 m mho (b) V5.0
g(volt
m) mho 60 V
(c) 7.5 m mho (d) 10.0 m mho
15. The point representing the cut off grid voltage on the mutual
characteristic of triode is (a) 10 (b) 50
–8V –6V –4V –2V Vg
(c) 25 (d) 40
IP S
20. The correct curve between voltage gain ( Av ) and load resistance
(R L ) is
R
Q AV AV
– + (a) (b)
(a) S P 0 (b) VRp
Va
(c) O (d) P
16. For a thermionic emitter (metallic) if J represents the current
density and T is its absolute temperature then the correct curve RL RL
J 1 AV AV
between loge 2 and is (c) (d)
T T
(a) (b)
loge J/T2

loge J/T2

RL RL
21. The curve between the work function of a metal (o ) and its
temperature (T) will be
1/T 1/T
o o
loge J/T2

loge J/T2

(c) (d) (a) (b)

T T
17. If the thermionic current1/Tdensity is J and emitter temperature
1/T is T
J 1 (c) o (d) o
then the curve between 2 and will be
T T
J/T2 J/T2
(a) (b)
T T

1/T 1/T
 1586 Electronics
[RPET 1990]
22. The plate characteristic curve of a diode in space charge limited Ip T3
region is as shown in the figure. The slope of curve at point P is 5.0 (mA) T2
mA/V. The static plate resistance of diode will be T1

IP B
(mA)
VP(Volt)
(a) T1  T2  T3 (b) T1  T2  T3
150
P (c) T1  T2  T3 (d) None of the above
28. The output current versus time curve of a rectifier is shown in the
(a) 111.1 O VP
(b) 222.2 figure. The average value of the output current in this case is [AIIMS
A 50 Volt
(c) 333.3 (d) 444.4
23. The ratio of thermionic currents (I/I ) for a metal when the 0

Current
temperature is slowly increased T0 to T as shown in figure. (I and
I are currents at T and respectively). Then which one is correct?
0
[Orissa JEE 2002]Is

I / I0 D (a) 0 (b) i / Time

A 0

(c) 2i /
0
(d) i0
B 29. Which of the following figures correctly shows the phase relation
between the input signal and the output signal of triode amplifier
C
(a)
(a) A (b) B T / T0
(c) C (d) D
24. The frequency response curve of RC coupled amplifier is shown in (b)
figure. The band width of the amplifier will be

Amax
0.707 Amax (c)

(d)
f 1 f2 f3 f4
(a) f3  f2 (b) f4  f1 30. In the figure four plate characteristics of a triode at different grid
f4  f2 voltage are shown. The difference between successive grid voltage is
(c) (d) f3  f1 1 V. Which curve will have maximum grid voltage and what is its
2 value?
25. The figure represents variation of triode parameter ( or r or g ) p m

with the plate current. The correct variation of  and r are given, Ip D C
p
B
respectively by the curves A

A
Triode parmeter

O
Vp
C (a) A, V = + 4 V
g
(b) B, V = + 4 V g

Plate current (c) A, V = 0 (d) D, V = 0

(a) A and B (b) B and C g g

(c) A and C (d) None of the above

26. The mutual characteristic curves of a triode are as shown in figure.
The cut off voltage for the triode is
IP(mA)

Read the assertion and reason carefully to mark the correct option out of
the options given below:
(a) If both assertion and reason are true and the reason is the correct
explanation of the assertion.
(a) 0 V –4 –2 0 +2 (b) 2 V (b) If both assertion and reason are true but reason is not the correct
(c) – 4 V (d) 6 V explanation of the assertion.
27. For the diode, the characteristic curves are given at different (c) If assertion is true but reason is false.
temperature. The relation between the temperatures is (d) If the assertion and reason both are false.
(e) If assertion is false but reason is true.
 Electronics 1587
1. Assertion : The logic gate NOT can be built using diode.
Reason : The output voltage and the input voltage of the
diode have 180° phase difference.
[AIIMS 2005]
2. Assertion : The number of electrons in a P-type silicon
semiconductor is less than the number of electrons
in a pure silicon semiconductor at room
temperature.
Reason : It is due to law of mass action. [AIIMS 2005]
3. Assertion : In a common emitter transistor amplifier the input
current is much less than the output current.
Reason : The common emitter transistor amplifier has very
high input impedance. [AIIMS 2005]
4. Assertion : A transistor amplifier in common emitter
configuration has a low input impedence.
Reason : The base to emitter region is forward biased.
[AIIMS 2004]
5. Assertion : The resistivity of a semiconductor increases with
temperature.
Reason : The atoms of a semiconductor vibrate with larger
amplitude at higher temperature there by
increasing it's resistivity. [AIIMS 2003]
6. Assertion : If the temperature of a semiconductor is increased
then it's resistance decreases.
Reason : The energy gap between conduction band and
valence band is very small [AIIMS 1997]
7. Assertion : The temperature coefficient of resistance is positive
for metals and negative for P-type semiconductor.
Reason : The effective charge carriers in metals are
negatively charged whereas in P-type semiconductor
they are positively charged.
[AIIMS 1996]
8. Assertion : Electron has higher mobility than hole in a
semiconductor.
Reason : Mass of electron is less than the mass of hole.
9. Assertion : An N-type semiconductor has a large number of
electrons but still it is electrically neutral.
Reason : An N-type semiconductor is obtained by doping an
intrinsic semiconductor with a pentavalent
impurity.
10. Assertion : The crystalline solids have a sharp melting point.
Reason : All the bonds between the atoms or molecules of a
crystalline solids are equally strong, that they get
broken at the same temperature.
11. Assertion : Silicon is preferred over germanium for making
semiconductor devices.
Reason : The energy gap for germanium is more than the
energy gap of silicon.
12. Assertion : We can measure the potential barrier of a PN
junction by putting a sensitive voltmeter across its
terminals.
Reason : The current through the PN junction is not same in
forward and reversed bias.
13. Assertion : Semiconductors do not Obey's Ohm's law.
Reason : Current is determined by the rate of flow of charge
carriers.
 1588 Electronics
14. Assertion : Two P-N junction diodes placed back to back, will = (16 + 8 + 4 + 0 + 1) = (29)
10 10

as a NPN transistor. 29. Assertion : When PN-junction is forward biased then motion of
Reason : The P-region of two PN junction diodes back to charge carriers at junction is due to diffusion. In
back will form the base of NPN transistor. reverse biasing. The cause of motion of charge is
15. Assertion : In transistor common emitter mode as an amplifier is drifting.
preferred over common base mode.
Reason : In common emitter mode the input signal is Reason : In the following circuit emitter is reverse biased and
connected in series with the voltage applied to the collector is forward biased.
base emitter function. +1V
16. Assertion : The dominant mechanism for motion of charge
carriers in forward and reverse biased silicon P-N C
B
junction are drift in both forward and reverse bias.
Reason : In reverse biasing, no current flow through the 0V
junction. E
17. Assertion : A transistor is a voltage-operating device. –2V
Reason : Base current is greater than the collector current. 30. Assertion : De-morgan's theorem A  B  A  B may be
18. Assertion : NAND or NOR gates are called digital building explained by the following circuit
blocks.
Reason : The repeated use of NAND (or NOR) gates can
produce all the basic or complicated gates. A Y Y
19. Assertion : At 0 K Germanium is a superconductor. =
B
Reason : At 0 K Germanium offers zero resistance.
20. Assertion : Base in a transistor is made very thin as compared
to collector and emitter regions.
Reason : In the following circuit, for output inputs ABC are
Reason : Due to thin base power gain and voltage gain is 101
obtained by a transistor.
21. Assertion : The current gain in common base circuit is always A
less than one.
B
Reason : At constant collector voltage the change in collector
current is more than the change in emitter current. Y
22. Assertion : V-i characteristic of P-N junction diode is same as C
that of any other conductor.
31. Assertion : In the following circuit the potential drop across
Reason : P-N junction diode behave as conductor at room the resistance is zero.
temperature.
23. Assertion : Zener diode works on a principle of breakdown – 2V
voltage.
R = 0.1 
Reason : Current increases suddenly after breakdown voltage.
24. Assertion : NOT gate is also called inverter circuit.
Reason : NOT gate inverts the input order. – 5V

25. Assertion : In vacuum tubes (valves), vacuum is necessary for Reason : The given resistance has low value.
the movement of electrons between electrodes
otherwise electrons collide with air particle and
loses their energy.
Reason : In semiconductors devices, external heating or
vacuum is not required.
26. Assertion : The following circuit represents 'OR' gate
A
B
Y Solids and Crystals
X
1 d 2 d 3 d 4 a 5 a
Reason : For the above circuit Y  X  A  B  A  B
6 a 7 a 8 b 9 a 10 c
27. Assertion : A P-N photodiode is made from a semiconductor
for which E = 2.8 eV. This photo diode will not
g
11 d 12 c 13 b 14 a 15 a
detect the wavelength of 6000 nm. 16 a 17 d 18 b 19 c 20 c
hc 21 b 22 a 23 b 24 a 25 d
Reason : A PN photodiode detect wavelength  if  Eg .
 26 d 27 d 28 d
28. Assertion : 29 is the equivalent decimal number of binary
number 11101.
Semiconductors
Reason : (11101) = (1  2 + 1  2 + 1  2 + 0  2 + 1  2 )
2
4 3 2 1 0

10
 Electronics 1589

1 c 2 b 3 d 4 b 5 b 21 c 22 a 23 b 24 b 25 b
6 b 7 b 8 c 9 d 10 a 26 c 27 a 28 b 29 b 30 d
11 b 12 a 13 a 14 d 15 c 31 b 32 b 33 a 34 b 35 b
16 b 17 b 18 b 19 c 20 c 36 a 37 a 38 a 39 b 40 a
21 d 22 b 23 ac 24 d 25 b 41 b 42 d 43 d 44 b
26 c 27 d 28 c 29 c 30 b
31 d 32 a 33 b 34 a 35 c Digital Electronics
36 d 37 c 38 b 39 d 40 a
1 b 2 c 3 b 4 a 5 b
41 d 42 c 43 b 44 c 45 d
6 c 7 d 8 b 9 a 10 a
46 b 47 a 48 b 49 a 50 d
11 d 12 b 13 c 14 a 15 c
51 d 52 b 53 b 54 a 55 c
56 d 57 b 58 d 59 a 60 a 16 a 17 b 18 b 19 a 20 a

61 b 62 a 63 c 64 a 65 b 21 b 22 c 23 b 24 c 25 b

66 a 67 c 68 c 69 c 70 c 26 c 27 b 28 a 29 a 30 d

71 b 72 b 73 a 74 b 75 c 31 d

76 b 77 c 78 a 79 d 80 a
Valve Electronics
81 a 82 a 83 b 84 d 85 c
86 d 87 a 88 c 89 b 90 c 1 c 2 c 3 a 4 b 5 b
91 a 92 b 93 d 94 d 95 d 6 b 7 c 8 b 9 a 10 a
96 d 97 d 98 a 99 b 100 a 11 c 12 b 13 b 14 c 15 d
101 b 16 b 17 b 18 c 19 c 20 c
21 b 22 b 23 b 24 c 25 a
Semiconductor Diode
26 c 27 d 28 a 29 a 30 ad
1 b 2 a 3 b 4 b 5 c 31 d 32 c 33 c 34 a 35 a
6 b 7 a 8 b 9 a 10 a 36 c 37 b 38 d 39 b 40 c
11 b 12 b 13 b 14 c 15 d
41 c 42 b 43 d 44 b 45 c
16 c 17 c 18 bc 19 c 20 d
46 c 47 b 48 b 49 a 50 c
21 d 22 b 23 d 24 c 25 c
51 a 52 b 53 b 54 a 55 c
26 b 27 b 28 b 29 c 30 b
56 a 57 a 58 d
31 b 32 c 33 d 34 c 35 d
36 a 37 b 38 b 39 d 40 a
41 b 42 a 43 b 44 a 45 a Critical Thinking Questions
46 b 47 b 48 a 49 c 50 d
1 c 2 a 3 c 4 c 5 abd
51 d 52 a 53 c 54 c 55 b
6 a 7 a 8 c 9 b 10 b
56 d 57 a 58 a 59 c 60 a
11 d 12 c 13 a 14 b 15 a
61 b 62 c 63 a 64 c 65 a
16 d 17 b 18 a 19 a 20 c
66 b 67 c 68 c 69 d 70 a
21 b 22 a 23 d 24 d 25 a
71 c 72 a 73 d 74 d 75 c
26 b 27 b 28 d 29 c 30 a
76 a 77 c 78 c 79 c
31 b 32 c 33 d 34 b 35 c
36 b 37 d 38 d 39 d 40 b
Junction Transistor
41 c 42 a 43 a 44 b 45 a
1 a 2 c 3 a 4 d 5 d 46 c 47 a 48 a 49 b 50 b
6 b 7 d 8 b 9 b 10 b
11 c 12 d 13 d 14 a 15 b
Graphical Questions
16 b 17 d 18 b 19 ac 20 a 1 c 2 b 3 c 4 c 5 a
 1590 Electronics

6 b 7 b 8 c 9 b 10 a 11. (d) Cu has fcc structure, for fcc structure co-ordination number =
12
11 b 12 a 13 d 14 a 15 d
12. (c) Vander Waal force is weak dipole-dipole interaction.
16 a 17 c 18 c 19 a 20 c
13. (b)
21 c 22 c 23 a 24 b 25 c
14. (a) The sodium chloride crystal structure has a fcc lattice with one
26 c 27 b 28 c 29 a 30 d
chloride ion at each lattice point and one sodium ion half a
cube length above it.
Assertion and Reason
15. (a) In NaCl crystal Na ion is surrounded by 6 Cl  ion, therefore
+

1 d 2 a 3 c 4 a 5 d coordination number of Na is 6. +

6 a 7 b 8 a 9 b 10 a
16. (a) Sodium has bcc structure. The distance between body centre
11 c 12 e 13 e 14 d 15 b
3a
and a corner 
16 d 17 d 18 a 19 d 20 a 2
21 c 22 d 23 a 24 a 25 b a
3  4 .225
26 a 27 a 28 a 29 b 30 c   3 .66 Å
2
31 b a
a
17. (d)
18. (b) For the fcc structure
r
4 r  (a  a ) 2 2 1/2
a 2 r
r a
a 2 a r
 r 
Solids and Crystals 4 2 2
a
1. (d) Ionic bonds cone into being when atoms that have low 19. (c) Metals reflects incident light by the vibrations of free electrons
ionization energies, and hence lose electrons rapidly, interact under the influence of electric field of incident wave. The
with other atoms that and to acquire excess electrons. The conductivity of metals decreases with increase of temperature
former atoms give up electrons to the latter and they there due to increase in random motion of free electrons. The
upon become positive and negative ions respectively. bonding is therefore metallic.
20. (c)
2. (d) For tetragonal, cubic and orthorhombic system
      90. 21. (b) The nearest distance between two atoms in a bcc lattice = 2
 3 a
3. (d) Tourmaline crystal is biaxial. (atomic radius)  2     3a
 4  2
4. (a) The temperature co-efficient of resistance of conductor is  
positive. 22. (a) The net force on electron placed at the centre of bcc structure
is zero. (By the principle of superposition of couloumb forces)
nA
5. (a) Density   23. (b) For bcc packing, distance between two nearest atoms
N (a)3
 3 a
where n = 2 for bcc structure , A = 39  10 kg, d  2r  2  
 4 
–3

 
2 2
N = 6.02  10 , a 
23
d  (4.525  10 10 )m 2d 2  3.7
3 3  Lattice constant a    4.3 Å
3 3
(d = nearest neighbour distance = distance between centres of
24. (a)
a
two neighbouring atoms  ) 4r
2 25. (d) 2 a  4r  a   2 (2r)  2  2 .54  3 .59 Å
2
On putting the values we get  = 907 26. (d)
6. (a) The highest energy level which an electron can occupy in the 27. (d) Covalent bonding exists in semi-conductor.
valence band at 0 K, is called Fermi energy level. 28. (d) In H O covalent bonding is present.
2

7. (a) In a triclinic crystal a  b  c and       90°

8. (b) Metallic solids are opaque because incident light is absorbed by Semiconductors
the free electrons in a metal.
9. (a) In ionic bonding electrons are transferred from one type of 1. (c) In P-type semiconductors, holes are the majority charge carriers
atoms to the other type creating positive and negative ions. For 2. (b) Ga has a valancy of 3.
example in NaCl, Na loses one electrons and Cl gains one so
that Na and Cl ions have a stable shell structure.
+ – Trivalent P - type
3. (d) Ge +
10. (c) Wood is non-crystalline. impurity semiconduc tor
4. (b) Since n > n ; the semiconductor is N-type.
e h
 Electronics 1591
5. (b) Absence of one electron, creates the positive charge of P  Type (n p  ne )
magnitude equal to that of electronic charge. Extrinsic
31. (d)
S.C.
Pantavalent N - type N  Type (ne  n p )
6. (b) Ge +
impurity semiconduc tor 32. (a) At room temperature the number of electrons and holes are
7. (b) Impurity increases the conductivity. equal in the intrinsic semiconductor.
Intrinsic 33. (b) Indium is trivalent, hence on doping with it, the intrinsic
8. (c) Conductivity is due to the semiconductor becomes P-type semiconductor.
semiconduc tor
34. (a)
breaking of covalent bond
C.B.
Extrisnsic
Conductivity is due to the Ef Energy gap (Eg)
semiconduc tor
breaking of covalent bond and excess of charge carriers due to
impurity. V.B.

9. (d) Resistance of conductors (Cu) decreases with decrease in 35. (c) In semiconductors, Forbidden energy gap is of the order of 1
temperature while that of semi-conductors (Ge) increases with eV.
decrease in temperature. 36. (d) At 0K temperature semiconductor behaves as an insulator,
because at very low temperature electrons cannot jump from
10. (a) Aluminum is trivalent impurity. the valence band to conduction band.
11. (b) With temperature rise conductivity of semiconductors 37. (c) Antimony is pentavalent.
increases.
38. (b) At 0K semiconductor behaves as insulator so it's resistance is
12. (a) infinite.
13. (a) Similar to Q. 11 39. (d) The conduction and valence bands in the conductors merge
into each other.
14. (d) In insulators, the forbidden energy gap is largest and it is of 40. (a) For N-type semiconductor, the impurity should be pentavalent.
the order of 6 eV.
41. (d) When a free electron is produced, simultaneously a hole is also
15. (c) N-type semiconductors are neutral because neutral atoms are produced.
added during doping. 42. (c) For P  type semiconductor the doping impurity should be
16. (b) trivalent.
17. (b) In insulators, the forbidden energy gap is very large, in case of 43. (b) The temperature co-efficient of resistance of a semiconductor is
semiconductor it is moderate and in conductors the energy gap always negative.
is zero. 44. (c) The resistance of semiconductor decreases with the increase in
temperature.
18. (b) Similar to Q. 15.
45. (d) At absolute zero temperature, semiconductor.
19. (c) Phosphorus is pentavalent.
46. (b) Formation of energy bands in solids are due to Pauli's exclusion
20. (c) In intrinsic semiconductors, the creation or liberation of one principle.
free electron by the thermal energy has created one hole. Thus 47. (a) In P-type semiconductors, holes are majority charge carriers.
in intrinsic semiconductors n = n
e h
48. (b)
21. (d) Conductor has positive temperature coefficient of resistance 49. (a) Conductivity of semiconductors increases with rise in
but semiconductor has negative temperature coefficient of temperature.
resistance. 50. (d) All are trivalent in nature.
22. (b) Boron is trivalent. 51. (d) In N-type semiconductors, electrons are majority charge
23. (a, c) In intrinsic semiconductors, electrons and holes both are corners.
charge carriers. In P-type semiconductors (Extrinsic 52. (b) When a strong current passes through the semiconductor it
semiconductors) holes are majority charge carriers. heats up the crystal and covalent bond are broken. Hence
because of excess number of free electrons it behaves like a
24. (d) conductor.
25. (b) 53. (b)
26. (c) Eg(Germanium )  0.67 eV 54. (a) Phosphorus is a pentavalent impurity so n > n .
e h

55. (c) Phosphorus is pentavalent while Indium is trivalent.

27. (d) In P-type semiconductors, holes are majority charge carrier and
electrons are minority charge carriers. 56. (d) Phosphorus and Arsenic both are pentavalent.
57. (b)
28. (c) At zero Kelvin, there is no thermal agitation and therefore no
electrons from valence band are able to shift to conduction 58. (d)
band. 59. (a) For Ge, Eg  0.7 eV  0.7  1.6  10 19 J  1.12  10 19 J
29. (c) Antimony is a fifth group impurity and is therefore a donor of 60. (a) At room temperature some covalent bond breaks and
electrons. semiconductor behaves slightly as a conductor.
1 61. (b)
30. (b) Resistance of semiconductor 
Temperatur e 62. (a)
 1592 Electronics
63. (c) Because boron is a trivalent impurity. 101. (b)
64. (a) In P-type semi conductor, holes are majority charge carriers.
65. (b) In intrinsic semiconductors, at room temperature n = n . e h

66. (a) In conductors valence band and conduction band overlaps.

67. (c) Because As is pentavalent impurity.
68. (c) At 0 K semiconductor behaves as an insulator.
69. (c)
70. (c)
71. (b) Antimony and phosphorous both are pentavalent.
72. (b) Gallium is trivalent impurity.
73. (a)
74. (b) One atom of pentavalent impurity, donates one electron.
75. (c)
76. (b) The charge on hole is positive.
77. (c) Phosphorus is pentavalent impurity.
78. (a) n i2  n h n e  (10 19 )2  10 21  n e  n e  10 17 / m 3 .
79. (d) Temperature co-efficient of semiconductor is negative.
80. (a) Copper, Aluminum, Iron are conductors, while Ge is
semiconductor.
81. (a) At room temperature, few bonds breaks and electron hole pair
generates inside the semiconductor.
82. (a)
83. (b) With rise in temperature, conductivity of semiconductor
increases while resistance decreases.
84. (d) Gallium, boron and aluminum are trivalent.
85. (c) Because with rise in temperature, resistance of semiconductor
decreases, hence overall resistance of the circuit increases,
which in turn increases the current in the circuit.
86. (d) Extrinsic semiconductor (N-type or P-type) are neutral.
i
87. (a) Because vd 
(ne )eA
88. (c)
89. (b) Resistivity is the intrinsic property, it doesn't depend upon
length and shape of the semiconductors.
90. (c)
hc 6 .6  10 34  3  10 8
91. (a) max    10888 Å
E 1 .14  1 .6  10 19
92. (b) In N-type semiconductor impurity energy level lies just below
the conduction band.
93. (d)
94. (d)
95. (d)   en e e
 6 .24
 ne    10 16 / cm 3
e e 1 .6  10 19 3900
96. (d) In semiconductors, the forbidden energy gap between the
valence band and conduction band is very small, almost equal
to kT. Moreover, valence band is completely filled where as
conduction band is empty.
97. (d) In sample x no impurity level seen, so it is undoped. In sample
y impurity energy level lies below the conduction bond so it is
doped with fifth group impurity.
In sample z, impurity energy level lies above the valence band
so it is doped with third group impurity.
98. (a) Forbidden energy gap for carbon is greater than that of silicon.
99. (b)
100. (a) Because electrons needed less energy to move.
 Electronics 1593
Therefore there is an electric field at the junction directed from
Semiconductor Diode the N-side to P-side
E
1. (b) P N
Holes
2. (a) In forward biased PN-junction, external voltage decreases the
potential barrier, so current is maximum. While in reversed Electrons
biased PN-junction, external voltage increases the potential
barrier, so the current is very small.
3. (b)
25. (c) In N-type semiconductor majority charge carriers are electrons.
4. (b) Filter circuits are used to get smooth dc  -filter is the best
26. (b) In forward biasing the diffusion current increases and drift
filter. current remains constant so not current is due to the diffusion.
5. (c) In reverse bias no current flows. In reverse biasing diffusion becomes more difficult so net
current (very small) is due to the drift.
6. (b) In reverse biasing, width of depletion layer increases.
27. (b) At a particular reverse voltage in PN-junction, a huge current
7. (a) Depletion layer consist of mainly stationary ions. flows in reverse direction known as avalanche current.
V (4  1) 28. (b) Due to the large concentration of electrons in N-side and holes
8. (b) Current flow is possible and i    10  2 A in P-side, they diffuses from their own side to other side. Hence
R 300 depletion region produces.
9. (a) The potential of P-side is more negative that of N-side, hence 29. (c) Only in option (c), P-side is more negative as compared to N-
diode is in reverse biasing. In reverse biasing it acts as open side.
circuit, hence no current flows. 30. (b) Depletion layer is more in less doped side.
10. (a) 31. (b) In forward biasing P-side is connected with positive terminal
and N-side with negative terminal of the battery
11. (b) It is used to convert ac into dc (rectifier)
32. (c) In forward biasing of PN-junction diode, current mainly flows
P N due to the diffusion of majority charge carriers.
33. (d)
34. (c) In forward biasing of PN junction diode width of depletion
layer decreases. In intrinsic semiconductor fermi energy level is
exactly in the middle of the forbidden gap

+ – C.B.

12. (b)
Ef
13. (b) Because in case (1) N is connected with N. This is not a series
combination of transistor. V.B.
35. (d)
14. (c)
36. (a) At high reverse voltage, the minority charge carriers, acquires
15. (d)
very high velocities. These by collision break down the covalent
16. (c) After a large reverse voltage is PN-junction diode, a huge bonds, generating more carriers. This mechanism is called
current flows in the reverse direction suddenly. This is called Avalanche breakdown.
Breakdown of PN-junction diode. 37. (b) Because P-side is more negative as compared to N-side.
17. (c) In forward biasing both positive and negative charge carriers 38. (b) When reverse bias is increased, the electric field at the junction
move towards the junction. also increases. At some stage the electric field breaks the
18. (b,c) covalent bond, thus the large number of charge carriers are
generated. This is called Zener breakdown.
19. (c) When polarity of the battery is reversed, the P-N junction
39. (d) In forward biasing both V and x decreases.
becomes reverse biased so no current flows. B

40. (a)
20. (d) Resistance in forward biasing R fr  10  and resistance in
41. (b) In figure 2,4 and 5. P-crystals are more positive as compared to
R fr 1 N-crystals.
reverse biasing RRw  10  
5
 4
R Rw 10 42. (a) ac Rectifier dc
21. (d) 43. (b) In this condition P  N junction is reverse biased.
22. (b) In forward biasing width of depletion layer decreases. 44. (a)
23. (d) V 0.5
45. (a) E   10 6 V / m .
24. (c) At junction a potential barrier/depletion layer is formed, with d 5  10 7
N-side at higher potential and P-side at lower potential.
 1594 Electronics
46. (b) Across the P  N junction, a barrier potential is developed 72. (a)
whose direction is from N region to P region. 73. (d)
47. (b) V 0.6
74. (d) By using E    6  10 5 V / m
48. (a) In forward biasing, resistance of PN junction diode is zero, so d 10 6
whole voltage appears across the resistance. 75. (c) The given circuit is full wave rectifier.
49. (c) 76. (a) The diode is in reverse biasing so current through it is zero.
50. (d) The electric field strength versus distance curve across the P-N 77. (c) In full wave rectifier, the fundamental frequency in ripple is
junction is as follows twice that of input frequency.
Electric field 78. (c) 20 
79. (c) V '  V  IR 0.1 A
P N
= 0.5 + 0.1  20
Distance = 2.5 V
51. (d)
52. (a) It doesn't Obey's ohms law.
Junction Transistor
53. (c) Because N-side is more positive as compared to P-side.
54. (c) When a light (wavelength sufficient to break the covalent 1. (a) When NPN transistor is used as an amplifier, majority charge
bond) falls on the junction, new hole electron pairs are created. carrier electrons of N-type emitter move from emitter to base and
No. of produced electron hole pair deponed upon no. of than base to collector.
photons. So photo emf or current proportional to intensity of
light. 2. (c) Phase change
55. (b) of 

81 .2
56. (d) For full wave rectifier  
r Input signal
1 f Output amplified signal
RL 3. (a) In oscillator, a portion of the output power is returned back
(feed back) to the input in phase with the starting power. This
 nmax  81.2% (r << R )
f L process is termed as positive feedback.
57. (a) Transistor
amplifier Out put
58. (a)
59. (c) In reverse biasing negative terminal of the battery is connected
to N-side.
60. (a) In the given condition diode is in reverse biasing so it acts as Feed back
open circuit. Hence potential difference between A and B is 6V network

61. (b) Zener breakdown can occur in heavily doped diodes. In lightly 4. (d) The emitter base junction is forward biased while collector base
doped diodes the necessary voltage is higher, and avalanche junction is reversed biased.
multiplication is then the chief process involved.
80 80
62. (c) 5. (d) Given ic   ie  24   ie  ie  30 mA
63. (a) 100 100
64. (c) Diode acts as open switch only when it is reverse biased By using ie  ib  ic  i = 30 – 24 = 6 mA.
b

65. (a) Because P-side is more negative than N-side.

6. (b)
66. (b) In unbiased condition of PN-junction, depletion region is
generated which stops the movement of charge carriers.
N N
67. (c) For a wide range of values of load resistance, the current in the
zener diode may change but the voltage across it remains Forward reverse
P
unaffected. Thus the output voltage across the zener diode is a biased biased
regulated voltage.
68. (c)
7. (d)  is the ratio of collector current and emitter current while 
69. (d) Arsenic has five valence electrons, so it a donor impurity. is the ratio of collector current and base current.
Hence X becomes N-type semiconductor. Indium has only three
outer electrons, so it is an acceptor impurity. Hence Y becomes 8. (b)
P-type semiconductor. Also N (i.e. X) is connected to positive  0 .98
terminal of battery and P(i.e. Y) is connected to negative 9. (b)   =49.
terminal of battery so PN-junction is reverse biased. 1  1  0.98
70. (a)  0 .96
10. (b)   =24.
71. (c) In photodiode, it is illuminated by light radiations, which in 1  1  0.96
turn produces electric current.
 Electronics 1595

ic 0.8
11. (c)   =0.96 and i = 7.2 mA 26. (c)  = 0.8    =4
(1  0 .8 )
e

ie
 ic  0.96  ie = 0.96  7.2 = 6.91 mA ic
Also    ic    ib = 4  6 = 24mA.
ib
 ie  ic  ib  7.2 = 6.91 + i  i = 0.29 mA. b b

27. (a) ic   ie  0.98  2  1.96 mA

12. (d)
90  ib  ie  ic  2  1.96  0.04 mA .
13. (d) iC   iE  10 = 0.9  i = 11mA
(b) ie  ib  ic  ic  ie  ib
E

100 28.
Also iE  iB  iC  iB  11  10  1mA. 9
29. (b) Vb  ib Rb  Rb  =257 k.
i 35  10  6
14. (a) Current gain   c  ic    ib = 80  250 A.
ib 30. (d) ie  ic  ib
15. (b) In transistor, base is least doped.  8 = 7.8 + ib  ib =0.2mA = 200 A.
16. (b)
ic
17. (d)  = 50, R = 1000 , V = 0.01V 31. (b) 
i i
ib
ic V 0 .01
 and ib  i   10  5 A 32. (b) FET is unipolar.
ib Ri 10 3 33. (a)
Hence ic  50  10 5 A  500 A . ie ib 1 1 
34. (b) ie  ib  ic   1   1    .
ic ic   (1   )
 99
18. (b)     0 .99 . 35. (b) In NPN transistor when emitter-base is forward biased,
1  1  99
electrons move from emitter to base.
19. (a,c) The circuit of a CE amplifier is as shown below. 36. (a) Here Vc  0.5 V , ic =0.05mA = 0.05  10 A –3

ie
C Output resistance is given by
ib B
Vc 0 .5
Rout    10 4  = 10k.
Ri RL Output ic 0 .05  10  3
ie
37. (a) Oscillator can produce radio waves of constant amplitude.
 i  8 .2
Input 38. (a) h fe   c    82

 b  Vce
i 8 . 3  8 .2

This has been shown a NPN transistor. Therefore base emitter ic 1  10 3
are forward, biased and input signal is connected between base 39. (b) Current gain    ib   10  5 A =0.01mA.
ib 100
and emitter.
20. (a) The base is always thin By using ie  ib  ic  ie = 1.01 + 1 = 1.01mA.

21. (c) Voltage gain =   Resistance gain 40. (a) In CB amplifier Input and output voltage signal are in same
phase.
 0 .99
   99 41. (b)
1  (1  0 .99)
42. (d)
10  10 3
43. (d) For CE configuration voltage gain    RL / Ri
Resistance gain   10
10 3
Power gain
 Voltage gain = 99  10 = 990. Power gain   2  RL / Ri  
Voltage gain
22. (a) The arrow head in the transistor symbol always shows the
direction of hole flow in the emitter region. 44. (b) As we know iE  iC  iB
ie i 1 1 
 1 b  1   .
N N ic ic   1 

P
23. (b) Digital Electronics
24. (b) Because emitter (N) is common to both, base (P) and collector
(N).
1. (b)
25. (b) Emitter is heavily doped.
2. (c)
3. (b) For ‘OR’ gate X  A  B
 1596 Electronics
i.e. 0  0  0 , 0  1  1 , 1  0  1 , 1  1  1 Y  ( A  B).( A.B)  ( A.B ).( A  B )  ( A A ).B  A(B .B )
4. (a)
 A .B  A B  A B
A
A
A B Y
C 0 0 1
1 0 0
B 0 1 0
B 1 1 0
C  A.B  A  B  A  B (De morgan’s theorem)
Hence output C is equivalent to OR gate. 17. (b) For ‘AND’ gate, if output is 1 then both inputs must be 1.
18. (b)
A AB 19. (a)
C
B 20. (a) The given symbol is of ‘AND’ gate.
21. (b) It is the symbol of ‘NOR’ gate.
C  AB. AB  AB  AB  AB  AB  AB
22. (c) The Boolean expression for the given combination is
In this case output C is equivalent to AND gate.
output Y  ( A  B).C
5. (b) In ‘NOR’ gate Y  A  B
The truth table is
i.e. 0  0  0  1 , 1  0  1  0 A B C Y =(A+B).C
0 1  1  0 , 1 1  1  0 0 0 0 0
6. (c) For ‘XNOR’ gate Y  A B  AB 1 0 0 0
0 1 0 0
i.e. 0 . 0  0.0  1.1  0.0  1  0  1
0 0 1 0
0 . 1  0.1  1. 0  0. 1  0  0  0
1 1 0 0
1 . 0  1. 0  0. 1  1.0  0  0  0 0 1 1 1
1 . 1  1.1  0.0  1. 1  0  1  1 1 0 1 1
7. (d) The output D for the given combination 1 1 1 1

D  ( A  B).C  ( A  B)  C Hence A  1 , B  0 , C  1
23. (b)
If A  B  C  0 then D  (0  0)  0  0  0  1  1  1
A
A
If A  B  1 , C  0 then D  (1  1)  0  1  0  0  1  1
8. (b) Y

9. (a) The Boolean expression for ‘NOR’ gate is Y  A  B

B
i.e. if A  B  0 (Low), Y  0  0  0  1 (High) B
10. (a)
Y  A.B  A  B  A  B
11. (d) The Boolean expression for ‘AND’ gate is R  P.Q
This output equation is equivalent to OR gate.
1.1 = 1, 1.0 = 0, 0.1 = 0, 0.0 = 0
24. (c) If inputs are A and B then output for NAND gate is Y  AB
12. (b) Two ‘NAND’ gates are required as follows
 If A  B  1 , Y  1.1  1  0
A AB 25. (b)
Y
B 26. (c)
A
Y  AB. AB  AB Y

13. (c) For ‘NAND’ gate (option c), output  0.1  0  1 B

14. (a) AND + NOT  NAND

Y  AB
15. (c) For ‘NOT’ gate X  A According to De morgan’s theorem
16. (a) The given Boolean expression can be written as
Y  A  B  A .B  A.B
 Electronics 1597
This is the output equation of ‘AND’ gate. 8. (b) When grid is given positive potential more electrons will cross
the grid to reach the positive plate P. Hence current increases.
27. (b) The output of OR gate is Y  A  B .
28. (a) The given symbol is of NAND gate.
P
29. (a) (100010)2  25  1  24  0  23  0  2 2  0 
G
21  1  20  0  32  0  0  0  2  0  (34)10

and (11011)2  24  1  23  1  2 2  0  21  1  20  1 K
Vp
 16  8  0  2  1  (27)10 9. (a) By using     rp  gm
Vg
 Sum (100010)2  (11011)2  (34)10  (27)10  (61)10 50
 7  10 3  2 .5  10  3    Vg  2.86 V .
Now Vg
2 61 Remainder

2 30 1 LSD 10. (a) Using voltage gain Av  also   rp  gm
rp
2 15 0 1
RL
2 7 1
2 3 1  20
 rp  
2 1 1 gm 3  10  3
0 1 MSD 20 180
 Av  = =16.36.
20 11
1
 Required sum (in binary system) 3  10  3  3  10 4
(100010)2  (11011)2  (111101)2 Vout  Vout 25
11. (c) Voltage gain    
Vin rp 0 .5 40  10 3
30. (d) For ‘NAND’ gate C  A.B 1 1
RL 10  10 3
i.e. 0.0  0  1 , 0.1  0  1
 Vout  2.5 V .
1.0  0  1 , 1.1  1  0
Vp
31. (d) ‘NOR’ gates are considered as universal gates, because all the 12. (b)     Vp   VG  20  (0.2) = 4V.
gates like AND, OR, NOT can be obtained by using only NOR VG
gates.

13. (b) Voltage gain AV  and   rp  gm
rp
Valve Electronics (Diode and Triode) 1
RL
1. (c) According to Richardson-Dushman equation, number of
   10  10  3  10 3  30
3

thermions emitted per sec per unit area J  AT 2e W0 / kT 

 2 2
J  T2  Av      30  20.
rp 3 3
2. (c) Intensity  Number of electrons 1
3. (a) In SCR (Space charge region) electrons collect around the 2rp
plate, this cloud decreases the emission of electrons from the 14. (c)
cathode, hence plate current decreases.
15. (d) After saturation plate current can be increased by increasing
4. (b) the temperature of filament. It can be done by increasing the
ip ip filament current.
5. (b) By using gm   3  10  4 
v g  1  (3) 16. (b) The maximum voltage gain (A ) =  v max

4
 ip  6  10 A  0.6 mA (Which is obtained when R = ). L


 17. (b) Voltage gain Av 
6. (b) Voltage gain Av  and   rp  gm rp
rp 1
1 RL
RL
 3 3
42 42  RL  1.5 rp  Av      20  12 .
 rp   21000   Av   29.57 rp 5 5
2  10  3 1
21000 1
1 .5 rp
50  10 3

  18. (c)
7. (c) Voltage gain Av  , for rp  RL  Av  19. (c)
rp 2
1
RL Vp
20. (c)   Vp  Vg =15  0.3 = 4.5 volt.
Vg
 1598 Electronics
1 1 A1 24 3
21. (b) Plate resistance    10 6     .
slope 10  3  10  3 A2 4  4 4
= 1000 k (static). 41. (c) A diode is used as a rectifier to convert ac in to dc.
 42. (b) Fluctuating dc Filter circuit smooth dc.
22. (b) Using Av  and   rp  gm
rp 43. (d)
1
RL 44. (b)
20
 50 45. (c)   rp  gm  rp  = 2  10 . 4

 rp   3
 25  10 3  10  3
gm 2  10
46. (c)
 Av 
50
 25. Vp
25  10 3 47. (b)   
1 Vg
25  10 3
 Vp    Vg =–50(–0.20) = 10V.
P 448  10 3
23. (b) P  Vi  V    200 V
i 14  1015  1.6  10 19 48. (b) rp 
1

1
 50k  .
slope 2  10  2  10  3
(Vp1  Vp2 (200  220)
24. (c)    25. rp  gm  R L
(VG1  VG2 ) (0 .5  1 .3) 
49. (a) Voltage amplification Av  
rp R L  rp
 22 1 1
25. (a)   rp  gm  gm    . RL
rp 6600 300
20  10 3  2 .5  10 3  R L
Vp1  Vp2 75  100  10   R L  5k  .
26. (c) rp   =12.5  10  =12.5k.
3
(R L  20  10 3 )
I p1  IP2 (2  4 )  10  3
 18
27. (d) 50. (c) Voltage gain Av    10 .
rp 8  10 3
28. (a) 1 1 4
 RL 10
29. (a) Voltage amplification Av 
rp
I0 / 2 2
2
1 I 
RL 51. (a) Ripple factor r   rms  1 
  1 =1.21.
 Idc  I0 /  2

 25  ......(i) 52. (b)
rp
1 53. (b)
50  10 3
 54. (a)   rp  gm  2.5  10 4  2  10 3 =50.
and 30  ......(ii)
rp  Vp 
1 (225  200)
100  10 3 55. (c)      33.3
 Vg  (5 .75  5)
 ip  constant
an solving equation (i) and (ii), rp  25k .
30. (a, d)  I  (7 .5  5 .5)
56. (a) gm   p    2m mho
31. (d)  Vg   1 .2  (2 .2)
32. (c) Before saturation region, linear region comes. In linear region  Vp  constant
ip  Vp 57. (a)
Vp1 20

i1
 
400 2
 . 58. (d) Using   rp  gm  gm   2  10  3 .
i2 Vp2 200 1 10  10 3
33. (c) i = 1.125 – 1.112 = 0.013A = 13 mA.
p

34. (a) Critical Thinking Questions

35. (a)
36. (c) Comparing the given equation with standard equation 1. (c) Number density of atoms in silicon specimen = 5  10 atom/m 28 3

i  AT 2 e qV / kT  VL 
kT
. = 5  10 atom/cm
22 3

V
37. (b) Since one atom of indium is doped in 5  10 Si atom. So 7

number of indium atoms doped per cm of silicon.

Vp
3

150  100 50
38. (d) rp     10 3  11.1k  .
ip (12  7 .5)  10  3 4.5 5  10 22
n  1  10 15 atom / cm 3 .
39. (b) 5  10 7
  RL 2. (a) The probability of electrons to be found in the conduction
40. (c) Voltage amplification Av  
rp R L  rp band of an intrinsic semiconductor
1
RL
 Electronics 1599

1 Output voltage
P ( E)  (E  EF )
; where k = Boltzmann's constant 12. (c) Voltage gain 
Input voltage
1  e kT
Hence, at a finite temperature, the probability decreases  V = V  Voltage gain
out in

exponentially with increasing band gap.  V = V  Current gain  Resistance gain

out in

3. (c) When donor impurity (+5 valence) added to a pure silicon (+4
valence), the +5 valence donor atom sits in the place of + 4 RL 10
=V  = 10  3  100   1V .
valence silicon atom. So it has a net additional + 1 electronic in

R BE 1
charge. The four valence electron form covalent bond and get
fixed in the lattice. The fifth electron (with net – 1 electronic
13. (a) ne  8  1018 / m 3 , nh  5  1018 / m 3
charge) can be approximated to revolve around + 1 additional
charge. The situation is like the hydrogen atom for which
m2 m2
13.6 e  2 . 3 , h  0.01
energy is given by E   2 eV . For the case of hydrogen, volt  sec volt  sec
n
the permittivity was taken as  . However, if the medium has a
0
 ne  nh so semiconductor is N-type
13.6
permittivity  , relative to  , then E   2 2 eV 1
r n Also conductivity    e(ne e  nh h )
r 0

Resistivity ( )
For Si,  = 12 and for n = 1, E ~– 0.1 eV
r

4. (c) The forward current 1

  1 .6  10 19 [8  1018  2.3  5  1018  0 .01]
 
1 . 6 10 19  0 . 2 
  23 
i  is (e eV / kT  1)  10 5 e 1 .4 10  300  1   = 0.34 -m.
 
 
V0 200
14. (b) Vrms    100 V
 10 5 [2038.6  1]  20.376  10 3 A 2 2
5. (a,b,d) At 0 K, a semiconductor becomes a perfect insulator. 15. (a) At knee point voltage across the diode is 0.7V.
Therefore at 0 K, if some potential difference is applied across
an insulator or a semiconductor, current is zero. But a Hence voltage across resistance R is 5 – 0.7 = 4.3 V.
conductor will become a superconductor at 0 K. Therefore,
 using V = iR  4.3 = 1  10  R  R = 4.3 k. –3

current will be infinite. In reverse biasing at 300 K through a

P-N junction diode, a small finite current flows due to minority 16. (d) In positive half cycle one diode is in forward biasing and other
charge carriers. is in reverse biasing while in negative half cycle their polarity
6. (a) Since diode in upper branch is forward biased and in lower reverses, and direction of current is opposite through R for
branch is reversed biased. So current through circuit positive and negative half cycles so out put is not rectified.
V
i ; here rd = diode resistance in forward biasing = 0 Since R and R are different hence the peaks during positive
R  rd 1 2

half and negative half of the input signal will be different.

V 2
 i   0 .2 A . V0 10
R 10 17. (b) In half wave rectifier Vdc  
7. (a) The voltage drop across resistance = 8 – 0.5 = 7.5 V  

 Current i 
7 .5
 3.4 mA 18. (a) In common base mode  = 0.98, R = 5 k, R = 70 in

2.2  10 3
R 5  10 3
hc hc 6.6  10 34  3  10 8  voltage gain Av     0.98   70
8. (c) E     =217100Å. Rin 70
 E 57  10 3  1 .6  10 19
9. (b) The diode in lower branch is forward biased and diode in Power gain = Current gain  Voltage gain
upper branch is reverse biased
5 5 = 0.98  70 = 68.6
 i  A.
20  30 50  n2  2
19. (a) rn   r   ao  12  (5 )  0 .53 = 10.6 Å.
P 100  10 3 
10. (b) The current through circuit i    0 .2 A  Z  15
V 0.5
 voltage drop across resistance = 1.5 – 0.5 = 1 V 20. (c) (i) V = –10V and V = –5V
A B

1 Diodes D and D are reveres biased and D is forward biased.

 R  5.
1 3 2

0.2
R
11. (d) In common emitter configuration current gain
h fe R
 50
Ai   = – 48.78.
1  hoe R L 1  25  10 6  10 3 R
R
R
4
4
A – 10 V –5V B
 1600 Electronics
J e ne ve 3 / 4 ne 5 n 6
       e 
J h nh vh 1 / 4 nh 20 nh 5

R R 3 26. (b) Consider the case when Ge and Si diodes are connected as
 R AB  R    R. show in the given figure.
4 4 2
(ii) When V = – 5V and V = – 10V Equivalent voltage drop across the combination Ge and Si
A B

diode = 0.3 V
Diodes D is reverse biased D and D are forward biased
12  0 .3
2 1 3

 Current i   2 .34 mA
R 5 k
R  Out put voltage V = Ri = 5 k  2.34 mA = 11.7 V
0

R Now consider the case when diode connection are reversed. In

R
R this case voltage drop across the diode's combination = 0.7 V
4
4
12  0 .7
A R –R5 V R – 10 V B  Current i   2 .26 mA
 R AB    = R. 5 k
4 2 4
 V0  iR  2.26 mA  5 k  11.3 V
(iii) In this case equivalent resistance between A and B is also
R. Hence charge in the value of V = 11.7 –11.3 = 0.4 V 0

Hence (ii) = (iii) < (i). 27. (b) For the positive half cycle of input the resulting network is
shown below
21. (b) According to the given polarity, diode D is forward biased 1

while D is reverse biased. Hence current will pass through D +

2 1
Vi D1 +
only. D2
10 V 2 k
6 2 k – 2 k
So current i   0 .02 A 0

(150  50  100) T/2 t
+
V0
–
2 k 2 k
22. (a) Diode is in forwards biasing hence the circuit can be redrawn 2 k
as follows –
1 1
 (V ) =0 max
(Vi )max   10  5 V .
2 2
10
30V Parallel 28. (d) The equivalent circuit can be redrawn as follows
10
 5 i 2 k
VAB 10 2
10 i2

30 10 V
VAB   5  10 V 14k 12k
(10  5)
i1
23. (d) The diode D will conduct for positive half cycle of a.c. supply
because this is forward biased. For negative half cycle of a.c. From figure it is clear that current drawn from the battery
supply, this is reverse biased and does not conduct. So out put 10
i  i2   5 mA and i1  0 .
would be half wave rectified and for half wave rectified out put 2

V0 200 2 200 5  0.7

Vrms    29. (c) ib   0.5 mA  Ic   Ib  100  0.5 mA
2 2 2 8 .6

24. (d)   ne(e  h )  2  1019  1.6  10 19 (0.36  0.14) By using VCE  VCC  Ic RL  18  50  10 3  100  13V

 1.6 ( - m)1 1  Q
30. (a) Ie  1010  1.6  10 19   1.6 mA  I  
10 6  t 
l l 0 .5  10 3 25
R     Since 2% electrons are absorbed by base, hence 98% electrons
A A 1 .6  10  4 8
reaches the collector i.e.  = 0.98
V 2 16
 i   A  0.64 A  Ic  Ie  0.98  1.6  1.568 mA  1.57 mA
R 25 / 8 25
25. (a) As we know current density J = nqv  0.98
Also current amplification factor     49
 J e  ne qve and J h  nh qvh 1  0 .02
31. (b)
A (A + B)
B
G1 Y

A G3

B G
2
AB
 Electronics 1601

36. (b)   rp gm  50

3/2 Vp 2ip1 / 3

From ip  KVp   rp 
ip 3K2 / 3

 gm 


3 K 2 / 3 i1p / 3

3

K 2 / 3 K 1 / 3 (Vp  Vg )1 / 2 
Y  ( A  B). AB rp 2 2
The given output equation can also be written as 3
 K(Vp  Vg )1 / 2 = 75 K (i /K) p
1/3

Y  ( A  B).( A  B ) (De morgan’s theorem) 2

Because i was in mA, g is substituted as 5 m℧
 AA  AB  BA  BB  0  AB  A B  0  A B  AB p m

3/2
This is the expression for XOR gate.  1 
 5  75 K 2 / 3i1p / 3  75 K 2 / 3 (8)1 / 3  K   
32. (c)  30 
X
X Vp 300
P Cut off grid voltage VG     6 V
Y  50
Y R
 i  (15  10)  10  3
X 37. (d) gm   p    1 .25  10  3 
 Vg  0  ( 4 )
Q  Vp  constant
Y
 Vp  150  120
The truth table can be written as      7 .5
 Vg  0  ( 4 )
  I p  constant
X Y X Y P  X Y Q  X .Y R  PQ
 7.5
 rp    6000 ohms
0 1 1 0 1 1 0 gm 1 .25  10  3
1 1 0 0 1 1 0 Vp
1 0 0 1 0 0 1 38. (d) The dynamic plate resistance is rp 
ip
0 0 1 1 1 1 0
2/3
Hence X = 1, Y = 0 gives output R =1 i 
Now for a vacuum diode ip  KVp3 / 2  Vp   p 
33. (d) K
A A
2 
NOT
NOR NOT Vp 2  1 
  i 3 
ip 3K 2/3 p

NOT AB
AB 1
B = AB  rp  (constant) Ip1 / 3  rp 
B I1p / 3
Hence option (d) is correct.
39. (d) ip  [0.125 Vp  7.5]  10 3 amp
34. (b) The truth table of the circuit is given
Differentiating this equation w.r.t. V
A B C p

X  AB Y  BC Z  X Y ip 1
0 0 0 1 1 0  0 .125  10  3 or  0 .125  10  3  rp  8 k 
Vp rp
1 0 0 1 1 0
0 0 1 1 1 0 40. (b) Vpeak  2 Vrms  2  141.4  200 V
1 0 1 1 1 0
0 1 0 1 1 0 41. (c) The emission current i  AT 2 Se  / kT
1 1 0 0 1 0
For the two surfaces A = A , S = S , T = 800 K, 1 2 1 2 1

T2  1600 K, 1 / T1  2 / T2
0 1 1 1 0 0
1 1 1 0 0 1 2
i2  T2 
   = (2) = 4  i2  4 i1  4 mA.
Therefore,
i1  T1 
2

Output Z of single three input gate is that of AND gate.

35. (c) Output of upper OR gate = W + X 42. (a) The first data gives value of plate resistance
Output of lower OR gate = W + Y Vp 10 10 5
rp   3
 
Net output F = (W + X) (W + Y) ip 0 .8  10 8
= WW + WY + XW + XY (Since WW = W) ip 
= W(1 + Y) + XW + XY (Since 1 + Y= 1) Also gm  and gm 
Vg rp
= W + XW + XY = W (1 + X) + XY = W + XY
 1602 Electronics
ip  rp 4  10 3  10 5 / 8  5  0.125 Vp  7.5  Vp  100 V
 Vg    6 .25 V
 8  change in plate voltage Vp  300  100  200 V
43. (a) Ip  0.004 (Vp  10 Vg ) 3/2
Change in grid voltage Vg  1  (3)  2V
Ip 3  Vp
  0 .004  (Vp  10 Vg )1 / 2  10  So,   
200
 100
Vg  2  Vg 2
3
 gm  0.004  (120  10  2)1 / 2  10 1
2 49. (b) The slope of anode characteristic curve 
rp
 gm  6  10 4 mho  0.6 m mho
1 V V
Comparing the given equation of I with standard equation  rp   50  50  10 3
p
0.02 mA / V mA A
Ip  K (Vp  Vg )3 / 2 we get  = 10
The slope of mutual characteristic curve = g m

 10 = 1  10 A/V.
Also from  = r  g  rp  
–3

0 .6  10  3
p m

gm    rp  gm  50  10 3  10 3  50 .
 rp  16.67  10   16.67 k .3
Vo Rf 100 k 
50. (b) Voltage gain A     100 .
44. (b)   rP  gm  20  2.5  50 Vi Ri 1 k
 RL  RL 50 R L Rf
From A   rP  R L    5RL
rP  R L A 10
Ri
20 rp –
 4 RL  rp  RL    5k 
4 4 +
Vi Vo
RL 14  12 84
45. (a) A   . Peak value of output signal
rp  RL 10  12 11
84 V 84  2
V0   2 2 V  Vrms  0  V
11 2 11 Graphical Questions
 r.m.s. value of current through the load
1. (c) With rise in temperature, resistivity of semiconductors
84  2 decreases exponentially.
 A  1.27 mA
11  12  10 3 2. (b) Potential across the PN junction varies symmetrically linear,
having P side negative and N side positive.
 64
46. (c) rp    4  10 4  3. (c) PN junction has low resistance in one direction of potential
gm 1600  10  6 difference +V, so a large current flows (forward biasing). It has
 64 a high resistance in the opposite potential difference direction
Voltage gain Av    32 –V, so a very small current flows (Reverse biasing).
rp 4  10 4
1 1 4. (c) When input voltage is – 10 V, the diode is reverse biased and
RL 40  10 3 no output is obtained. On the other hand, when input is +10 V,
 Output signal voltage the diode is forward biased and output is obtained which is
+10V. Therefore the output is of the form as show in the
V0  Av  Vi  32  1  32 V (r.m.s.) following figure.
+ 10 V
V02 (32)2
Signal power in load    25.6 mW
RL 40  10 3
0
47. (a) ip  k (Vp  Vg )3 / 2 mA
5. (a) In the depletion layer of PN junction, stationary, positive ions
 4 = k(200 – 10  4) = k  (160) 3/2 3/2
….(i) exists in the N-side and stationary negative ions exists in the P
side.
and ip  k (160  10  7)3 / 2  k  (90)3 / 2 ….(ii)
+
From equation (i) and (ii) we get
3/2 3
 90  3
ip  4     4     1 .69 mA
 160  4 Barrier potential
–
difference
48. (a) At Vg   3 V, Vp  300 V and Ip  5mA
At Vg  1V , for constant plate current i.e. Ip  5mA 6. PN junction
(b) Vk = knee voltage = 0.3 V
From Ip  0.125 Vp  7.5 V (2 .3  0 .3)
 Resistance    200  0.2k 
i (10  0)  10  3
 Electronics 1603
7. (b) Half wave rectifier, rectifies only the half cycle of input ac  Vp   (80  60) 20
signal and it blocks the other half. 19. (a)        10
 Vg  [6  (4 )] 2
8. (c) As RC time constant of the capacitor is quite large   ip  const.
(   RC  10  10 3  10  10 6  0.1 sec ), if will not 
discharge appreciably. Hence voltage remains nearly constant. 20. (c) According to | Av | 
rp
9. (b) In the positive half cycle of input ac signal diode D is forward 1
1
RL
biased and D is reverse biased so in the output voltage signal,
2

A and C are due to D . In negative half cycle of Input ac signal

1
as R increases A also increases. When R becomes too high
L v L

D conducts, hence output signals B and D are due to D .

2 2 then A = maximum = 
v

10. (a) If i is the current in the diode and V is voltage drop across it,
then for given figure voltage equation is Hence only option (c) is correct.
21. (c) With rise in temperature, work function decreases (non-
1 8
i  100  V  8  i   V  i  (0.01)V  0.08 linearly).
100 100
Vp 50
1 22. (c) Rp    333.3 
Thus the slope of i-V graph   0 .01 ip 150  10  3
RL
2
11. (b) The current at 2V is 400 mA and at 2.1 V it is 800 mA. The i T 
dynamic resistance in this region 23. (a) i  T2   
i0  T0 

V (2.1  2) 1
R    0.25 
i (800  400)  10  3 4 This is the equation of a parabola.
12. (a) From the given waveforms, the following truth table can be 24. (b) The band width is defined as the frequency band in which the
made 1
amplifier gain remains above  0 .707 of the mid
Time interval Inputs Output 2
A B Y frequency gain (A ). The low frequency f at which the gain falls
max 1

1
0T 1
0 0 0 to i.e. 0-.707 times it's mid frequency value is called
2
TT 1 2
0 1 0
lower cut off frequency and the high frequency f at which the 4

T T 1 0 0 1
2 3

gain falls to i.e. 0.707 times of it's mid frequency is

T T
3 4
1 1 1 2
known as higher cut off frequency so band width = f – f . 4 1

This truth table is equivalent to ‘AND’ gate.

25. (c) r varies with i according to relation rp  ip1 / 3 i.e. when i
p p p

13. (d) 5 volt is low signal (0) and 10 volt is high signal (1) and taking
increases, r decreases, hence graph C represents the variation
5 -sec as 1 unit. In a negative logic, low signal (0) gives high
p

of r .p

output (1) and high signal (1) gives low output (0). The output
is therefore 1010010111.  doesn't depends upon i , hence graph A is correct.
p

26. (c) From the graph it is clear that of for Vg   4 V, ip  0, so

ip (20  15)  10 3
14. (a) gm    2.5 millimho cut off voltage is – 4 volt.
Vg (4  2)
27. (b) As temperature increases saturation current also increases.
15. (d) The cut off grid voltage is that negative grid bias 28. (c)
corresponding to which the plate current becomes zero. At
point P, i = 0 29. (a) Output signal voltage has phase difference of 180° with respect
to input.
p

16. (a) According to Richardson-Dushman equation J  AT 2e b / T

30. (d) Grid is maintained between 0 volt to certain negative voltage.
J b
Taking log of this equation loge  loge A 
T2 T Assertion and Reason
J 1
i.e. graph between loge and will be a straight line
T2 T 1. (d) In diode the output is in same phase with the input therefore it
having negative slope and positive intercept (log A) on cannot be used to built NOT gate.
e

J
loge 2 axis. 2. (a) According to law of mass action, ni2  ne nh . In intrinsic
T semiconductors n = n = n and for P-type semiconductor n
i e h e

2 b / T J would be less than n , since n is necessarily more than n .

J  AT e  2  e b / T
i h i

17. (c)
T 3. (c) In common emitter transistor amplifier current gain   1, so
J 1 output current > Input current, hence assertion is correct.
i.e. will vary exponentially with , having negative slope. Also, input circuit has low resistance due to forward biasing to
T2 T emitter base junction, hence reason is false.
18. (c) This is the graph between i and V and i becomes zero at
p g p
4. (a) Input impedance of common emitter configuration
certain negative potential.
VBE

iB VCE constant
 1604 Electronics
where VBE  voltage across base and emitter (base emitter power gain and voltage gain are obtained by a transistor. If the
region is forward biased) base region was made quite thick, then majority of carriers from
emitter will combine with the carriers in the base and only small
iB  base current which is order of few microampere. number of carriers will reach the collector, so there would be
little collector current and the purpose of transistor would be
Thus input impedance of common emitter is low. defeated.
5. (d) Resistivity of semiconductors decreases with temperature. The
 I 
atoms of a semiconductor vibrate with larger amplitudes at 21. (c) The current gain in common base circuit    C 

higher temperatures there by increasing it's conductivity not  I E  VC
resistivity.
The change in collector current is always less than the change
6. (a) In semiconductors the energy gap between conduction band in emitter current.
and valence band is small ( 1 eV). Due to temperature rise,
electron in the valence band gained thermal energy and may IC  I E . Therefore,   1.
jump across the small energy gap, goes in to the conduction 22. (d) The V-i characteristic of PN- diode depends whether the
band. Thus conductivity increases and hence resistance junction is forward biased or reverse biased. This can be
decreases. showed by graph between voltage and current.
7. (b)

current (A)
8. (a) The ratio of the velocity to the applied field is called the

Forward
mobility. Since electron is lighter than holes, they move faster
in applied field than holes. Knee voltage
Reverse forward bias
9. (b) bias (V) (V)
Intrinsic + Pentalvalent
impurity
N-type
semiconductor semiconductor Zener

Reverse current
voltage
(Neutral) (Neutral) (Neutral)

(A)
10. (a) At a particular temperature all the bonds of crystalline solids
breaks and show sharp melting point.
23. (a) When the reverse voltage across the zener diode is equal to or
11. (c) The energy gap for germanium is less (0.72 eV ) than the more than the breakdown voltage, the reverse current increases
energy gap of silicon (1.1 eV ) . Therefore, silicon is preferred sharply.
over germanium for making semiconductor devices. 24. (a)
12. (e) We cannot measure the potential barrier of a PN-junction by
Input (A) Output (Y)
connecting a sensitive voltmeter across its terminals because in
the depletion region, there are no free electrons and holes and
in the absence of forward biasing, PN- junction offers infinite If A = 0, Y = 1 and A = 1, Y = 0.
resistance. 25. (b) In vacuum tubes, vacuum is necessary and the working of
13. (e) The assertion is not true. In fact, semiconductor Obeys Ohm's semiconductor devices is independent of heating or vacuum.
law for low values of electric field (~ 10 V/m). Above this, the
6

26. (a)
current becomes almost independent of electric field. Y  X  AB  AB
A X  AB
14. (d) Two PN-junctions placed back to back cannot work as NPN
transistor because in transistor the width and concentration of B
doping of P-semiconductor is less as compared to width doping This is the Boolean expression for 'OR' gate.
of N-type semiconductor type.
27. (a) For detection of a particular wavelength () by a PN photo
15. (b) Common emitter is prepared over common base because all
hc
the current, voltage and power gain of common emitter diode, energy of incident light > E  
amplifier is much more than the gains of common base
g

Eg
amplifier.
16. (d) In PN-junction, the diffusion of majority carriers takes place hc 6.6  10 34  3  10 8
For Eg  2.8 eV ,   441.9 nm
when junction is forward biased and drifting of minority Eg 2 .8  1.6  10 19
carriers takes place across the function, when reverse biased.
The reverse bias opposes the majority carriers but makes the hc
minority carriers to cross the PN-junction. Thus the small i.e.  6000 nm, so diode will not detect the wavelength
Eg
current in A flows during reverse bias.
of 6000Å.
17. (d) A transistor is a current operating device because the action of 28. (a)
transistor is controlled by the charge carriers (electrons or
holes). Base current is very much lesser than the collector 29. (b) In forward biasing of PN junction current flows due to
current. diffusion of majority charge carriers. While in reverse biasing
current flows due to drifting of minority charge carriers.
18. (a) These gates are called digital building blocks because using
these gates only (either NAND or NOR) we can compile all The circuit given in the reason is a PNP transistor having
other gates also (like OR, AND, NOT, XOR). emitter is more negative w.r.t. base so it is reverse biased and
collector is more positive w.r.t. base so it is forward biased.
19. (d) At 0K, Germanium offers infinite resistance, and it behaves as
an insulator. 30. (c) Assertion is true but reason is false
20. (a) In a transistor, the base is made extremely thin to reduce the A AB
combinations of holes and electrons. Under this condition, most B
of the holes (or electrons) arriving from the emitter diffuses
across the base and reach the collector. Hence, the collector
current, is almost equal to the emitter current, the base current Y  ( AB).C
C
being comparatively much smaller. This is the main reason that
 Electronics 1605
If A = 1, B = 0, C = 1 then Y = 0
31. (b) Both assertion and reason are true but potential difference
across the resistance is zero, because diode is in reverse biasing
hence no current flows.
 1606 Electronics

1. In a pure silicon (n = 10 /m ) crystal at 300 K, 10 atoms of

16 3 21

i
2 k
phosphorus are added per cubic meter. The new hole concentration
will be (a) 0, 0 i2

(a) 10 per m
21 3
(b) 10 per m 19 3 (b) 5 mA, 5 mA
(c) 10 per m (d) 10 per m (c) 5 mA, 0 10 V
14k 12k
11 3 5 3

(d) 0, 5 mA i1
2. In the Boolean algebra ( A  B )  A equals to
8. In space charge limited region, the plate current in a diode is 10 mA
(a) AB (b) A for plate voltage 150 V. If the plate voltage is increased to 600 V,
then the plate current will be
(c) A  B (d) A + B
3. In a given circuit as shown the two input waveform A and B are (a) 10 mA (b) 40 mA
applied simultaneously. The resultant waveform Y is (c) 80 mA (d) 160 mA
9. A triode has a plate resistance of 10 k and amplification factor 24.
A If the input signal voltage is 0.4 V (r.m.s.), and the load resistance is
Y 10 k ohm, then, the output voltage (r.m.s.) is
(a) 4.8 V (b) 9.6 V
B
(c) 12.0 V (d) None of these
10. Pure sodium (Na) is a good conductor of electricity because the 3s
and 3p atomic bands overlap to form a partially filled conduction
(a) (b) band. By contrast the ionic sodium chloride (NaCl) crystal is
(a) Insulator (b) Conductor
(c) (d) (c) Semiconductor (d) None of these
11. Would there be any advantage to adding n-type or p-type impurities
4. Two identical capacitors A and B are charged to the same potential to copper
V and are connected in two circuits at t = 0, as shown in figure. The (a) Yes (b) No
charge on the capacitors at time t = CR are respectively
(c) May be (d) Information is insufficient
+ – + –
12. In the following common emitter circuit if  = 100, V = 7V, V =
C C CE BE

Negligible R = 2 k then I = ?
C B

iB iC
R R (a) 0.01 mA RC 15 V
RB
(i) (ii) (b) 0.04 mA C
VC
(a) VC, VC (b) , VC B
e (c) 0.02 mA
E
VC VC VC (d) 0.03 mA
(c) VC, (d) ,
e e e 13. When a battery is connected to a P-type semiconductor with a
5. In transistor, forward bias is always smaller than the reverse bias. metallic wire, the current in the semiconductor (predominantly),
The correct reason is
inside the metallic wire and that inside the battery respectively due
(a) To avoid excessive heating of transistor to
(b) To maintain a constant base current
(a) Holes, electrons, ions (b) Holes, ions, electrons
(c) To produce large voltage gain
(d) None of these (c) Electrons, ions, holes (d) Ions, electrons, holes
6. In NPN transistor, if doping in base region is increased then 14. Is the ionisation energy of an isolated free atom different from the
collector current ionisation energy E for the atoms in a crystalline lattice
g

(a) Increases (b) Decreases (a) Yes (b) No

(c) Remain same (d) None of these (c) May be (d) None of these
7. In the following circuit I and I are respectively
1 2
 Electronics 1607
15. In the following circuit, a voltmeter V is connected across a lamp L.
What change would occur in voltmeter reading if the resistance R is (a) E/R (b) E/2R
reduced in value
(c) 2E/3R (d) Zero
L
V 20. In circuit in following fig. the value of Y is

VCC
0 G1
R
+ – A y
VBB G2
B
(a) Increases (b) Decreases (a) 0
(c) Remains same (d) None of these (b) 1 1 G3
16. For given electric voltage signal dc value is (c) Fluctuates between 0 and 1
V (d) Indeterminate as the circuit can’t be realised
21. A waveform shown when applied to the following circuit will
6.28V produce which of the following output waveform. Assuming ideal
diode configuration and R1  R2
t R1
(a) 6.28 V (b) 3.14 V
5V
(c) 4 V (d) 0 V
17. When a silicon PN junction is in forward biased condition with Vin
R2 V0
series resistance, it has knee voltage of 0.6 V. Current flow in it is 5
–5V
mA, when PN junction is connected with 2.6V battery, the value of
series resistance is (a) (b)
+ 5V
(a) 100  (b) 200 
(c) 400  (d) 500  – 5V

18. In the following circuit the equivalent resistance between A and B is

(c) (d)
4 6 2.5V
– 2.5V

A B
2 22. In a triode, cathode, grid and plate are at 0, – 2 and 80 V
– 10V – 2V respectively. The electrons is emitted from the cathode with energy
8 12 3 eV. The energy of the electron reaching the plate is
20
(a)  (b) 10 
3 (a) 77 eV (b) 85 eV
(c) 16  (d) 20  (c) 81 eV (d) 83 eV
19. In the following circuit of PN junction diodes D , D and D are ideal 23. The energy gap of silicon is 1.5 eV. At what wavelength the silicon
1 2 3

then i is will stop to absorb the photon

R (a) 8250 Å (b) 7250 Å
D1 (c) 6875.5 Å (d) 5000 Å
R
D2

i D3 R

(SET -27)

1. (c) By using mass action law ni2  ne nh 2. (b) ( A  B )  A  ( A  B)  A  ( A  B)  A

ni2 (1016 )2 = AA + AB = A + AB = A(1 + B) = A
 nh    1011 per m 3
ne 10 21 3. (a) (1 = high, 0 = low)
 1608 Electronics
Input to A is in the sequence, 1,0,1,0. impurities to copper decreases the conductivity because an
Input to B is in the sequence, 1, 0, 0, 1. impurity tends to scatter electrons, impeding the flow of
current.
Sequence is inverted by NOT gate.
12. (b) V  VCE  IC RL
Thus inputs to OR gate becomes 0, 1, 0, 1 and output of OR
gate becomes 0, 1, 1, 1  15 = 7 + I  2  10  i = 4 mA
C
3

Since for OR gate 0 + 1 = 1. Hence choice (a) is correct. i 4

   C  iB   0 .04 mA
4. (b) Time t = CR is known as time constant. It is time in which iB 100
1
charge on the capacitor decreases to times of it’s initial 13. (a) Charge carriers inside the P-type semiconductor are holes
e
charge (steady state charge). (mainly). Inside the conductor charge carriers are electrons and
for cell ions are the charge carriers.
In figure (i) PN junction diode is in forward bias, so current
will flow the circuit i.e., charge on the capacitor decrease and in 14. (a) The ionisation energy of an isolated atom is different from it’s
1 value in crystalline lattice, because in the latter case each
time t it becomes Q  (Qo ) ; where Qo  CV bound electron is influenced by many atoms in the periodic
e crystalline lattice.
CV
Q 15. (a) Here the emitter base junction of N-P-N transistor is forward
e biased with battery V through resistance R. When the value of
BB

In figure (ii) P-N junction diode is in reverse bias, so no R is reduced, then the emitter current i will increase. As a e

current will flow through the circuit hence change on capacitor result the collector current will also increase. (i = i – i ). Due to c e b

will not decay and it remains same i.e. CV after time t. increase in i , the potential difference across L increases and
c

5. (a) If forward bias is made large, the majority charge carriers hence the reading of voltmeter will increases.
would move from the emitter to the collector through the base 2 V0 2  6.28
with high velocity. This would give rise to excessive heat 16. (c) Vdc  Vac    4 V.
causing damage to transistor.  3.14
17. (c) 0.6V R
6. (b) Number of holes in base region increases hence recombination
of electron and hole are also increases in this region. As result
base current increases which in turn decreases the collector
current. i (2 .6  0 .6)
R = 400 .
7. (d) Equivalent circuit can be redrawn as follows 5  10  3

i 2 k
2.6V
i2
10 18. (c) According to the given figure A is at lower potential w.r.t. B.
i  5 mA  i2 Hence both diodes are in reverse biasing, so equivalent, circuit
2
can be redrawn as follows.
10 V i=0
14k 12k
1

 Equivalent resistance between A and B

i1
8. (c) In space charge limited region, the plate current is given by R = 8 + 2 + 6 = 16 .
Child's law ip  KVp3 / 2 4 6
3/2
ip 2  Vp   600 
3/2 2
Thus,  2     (4 )3 / 2  8 A B
ip1  Vp   150 
 1  8 12

or ip 2  ip1  8 = 10  8 mA = 80 mA. 19. (a) Diodes D and D are forward biased and D is reverse biased so
1 3 2

the circuit can be redrawn as follows.

9. (a) Use V0  AVs
E R
i
24  10k 24  10 R
Now A    12
10k  10k 20 R

Therefore, V0  12  0.4  4.8 volt (r.m.s.)

10. (a) In sodium chloride the Na  and Cl  ions both have noble i R
gas electron configuration corresponding to completely filled
bands. Since the bands do not overlap, there must be a gap 20. (a) Lower NOT gate inverts inputEto zero. NOT gate from NAND
between the filled bands and the empty bands above them, so gate inverts this output to 1 upper NAND gate converts this
NaCl is an insulator. input 1 and input 0 to 1.
11. (b) Pure Cu is already an excellent conductor, since it has a Thus A = 1 and B = 1 become inputs of NAND gate giving final
partially filled conduction band, furthermore, Cu forms a
output as zero. Choice A is correct.
metallic crystal as opposed to the covalent crystals of silicon or
germanium, so the scheme of using an impurity to donate or
accept an electron does not work for copper. In fact adding
 Electronics 1609

0 G1 1
1
A=1 A  B  1 1  0
G2
B=1

1 G3
0 1
21. (d) The P-N junction will conduct only when it is forward biased
i.e. when – 5V is fed to it, so it will conduct only for 3rd
quarter part of signal shown and when it conducts potential
drop 5 volt will be across both the resistors, so output voltage
across R is 2.5 V.
2

 V0   2.5 V

22. (d) There is a loss of kinetic energy of 2 eV from filament to grid.

The energy of the electron after passing through the grid will
be 3 – 2 = 1 eV

P 80 V

G 2V

F 0V
The potential difference between plate and grid is
80  (2)  82V. The electron will gain energy 82 eV from
the grid to the plate. The energy of electron reaching the plate
= 1 + 82 = 83 eV

hc 6.6  10 34  3  10 8
23. (a)    8.25  10 7 m  8250 Å
E 1 .5  1.6  10 19
The photon having wavelength equal to 8250Å or more than
this will not able to overcome the energy gap of silicon.