Lecture-03 Basics

&Analog Electronics ESE

PYQs Part-03
Question-01
The modified work function of an n-channel MOSFET is -0.85 V. If
the interface charge is 3 × 10-4C/m2 and the oxide capacitance is 300
µF/m2, the flat band voltage is

(a) –1.85 V

(b) –0.15 V

(c) +0.15 V

(d) +1.85 V

[ESE-2002]
Question-02
Consider following statements:

1. BJT is a current controlled device with high input impedance and high
gain bandwidth

2. FET is a voltage controlled device with high input impedance and low
gain bandwidth

3. UJT is a negative resistance device and can be used as an oscillator

4. BJT, FET and UJT can all be used for amplification.

Which of these statements are correct?

(a) 1 and 2 (b) 2 and 3

(c) 3 and 4 (d) 1 and 4

[ESE-2005]
Question-03
Match List-I (Circuit Symbol) with List-II (Device) and select the
correct answer using the code given below the lists:

List-I List-II
A. 1. N-channel IFRT

B. 2. Varactor

C. 3. Tunnel diode

D. 4. P-channel MOSFET
Codes:

A B C D

(a) 3 2 1 4

(b) 1 4 3 2

(c) 3 4 1 2

(d) 1 2 3 4

[ESE-2005]
Question-04
What is the main difference between MOSFETS and BJTs in terms of their
I-V characteristics?

(a) Current is quadratic with VGS for MOSFETs and linear with VBE for
BJTs

(b) Current is linear with VGS for MOSFETs and exponential with VBE for
BJTs

(c) Current is exponential with VGS/VBE in both these devices, but rise is
faster in MOSFETS

(d) Current is quadratic with VGS for MOSFETs and exponential with VBE
for BJTs

[ESE-2006]
Question-05
Assertion (A): In JFET, the phenomenon of thermal runaway is not
observed around room temperature.

Reason (R): The heat dissipation in the semiconductor increases its

temperature which increases the carrier mobility with temperature.

(a) Both A and R are true and R is the correct explanation of A

(b) Both A and R are true but R is NOT the correct explanation of A

(c) A is true but R is false

(d) A is false but R is true

[ESE-2006]
Question-06
In a source follower, consider the following statements:

1. The voltage gain of a source follower is always less than one.

2. It has some current gain and power gain.

3. Its output resistance can be made low.

Which of these statements are correct?

(a) 1 and 2 only (b) 2 and 3 only

(c) 1 and 3 only (d) 1, 2 and 3

[ESE-2007]
Question-07
Assertion (A): MOSFETs perform very well in parallel operation.

Reason (R): MOSFET has smaller turn-off time.

(a) Both A and R are true and R is the correct explanation of A

(b) Both A and R are true but R is not the correct explanation of A

(c) A is true but R is false

(d) A is false but R is true

[ESE-2007]
Question-08
The lower turn off time of MOSFET when compared to BJT can be
attributed to which one of the following?

(a) Input impedance

(b) Positive temperature coefficient

(c) Absence of minority carriers

(d) On-state resistance

[ESE-2007]
Question-09
Two MOSFETS M1 and M2 are connected in parallel to carry a total
current of 20 A. The drain to source voltage of M1 is 2.5 V and that
of M2 is 3 V. What are the drain currents of M1 and M2 when the
current sharing series resistances are each of 0.5 Ω?

(a) 10.5 A and 9.5 A

(b) 9.5 A and 10.5 A

(c) 10.5 A and 10.5 A

(d) 9.5 A and 9.5 A

[ESE-2009]
 Question-10
If a transistor has the value of common base current gain 0.98, then
what is the value of common emitter current gain?

(a) 48

(b) 49

(c) 50

(d) 51

[ESE-2023]
Question-11
A JFET is set up as a follower, with µ = 200, rd = 100 kΩ and source
load resistor RL = 1 kΩ. The output resistance R0 is-

(a) 1000 Ω

(b) 500 Ω

(c) 333 Ω

(d) 666 Ω

[ESE-2010]
Question-12
Thermal runaway is not encountered in FETs because-

(a) IDS has a zero temperature coefficient.

(b) IDS has a negative temperature coefficient.

(c) IDS has a positive temperature coefficient

(d) The mobility of the carriers increases with increase in

temperature.

[ESE-2010]
Question-13
The FET shown in the figure below is a

(a) Common drain

(b) Common gate

(c) Common source

(d) Common source follower

[ESE-2010]
Question-14
Compared to the bipolar junction transistor, a JFET:

1. Has a larger gain bandwidth produce

2. Is less noisy

3. Has less input resistance

4. Has current flow due to only majority carriers

(a) 1, 2, 3 and 4 are correct (b) 1 and 2 are correct

(c) 2 and 4 are correct (d) 3 and 4 are correct

[ESE-2011]
Question-15
Which one of the following statement is not correct for a MOSFET?

(a) Are easy to parallel for higher current

(b) Leakage current is relatively high

(c) Have more linear characteristic

(d) Overload and peak current handling capability are high

[ESE-2011]
Question-16
Match List-I with List-II and select the correct answer using the code
given below the lists:

List-I List-II
A. BJT 1. Population inversion
B. MOS capacitor 2. Pinch-off voltage
C. LASER diode 3. Early effect
D. JFET 4. Flat-band voltage

Codes:
(a) A-3, B-1, C-4, D-2 (b) A-2, B-1, C-4, D-3
(c) A-3, B-4, C-1, D-2 (d) A-2, B-4, C-1, D-3

[ESE-2012]
Question-17
Statement (I): Most JFETs are designed to work in depletion mode.

Statement (II): Depletion mode takes advantage of very high input

resistance or reverse biased state.

(a) Both Statement (I) and Statement (II) are individually true and
Statement (II) is the correct explanation of Statement (I).

(b) Both Statement (I) and Statement (II) are individually true but
Statement (II) is not the correct explanation of Statement (I).

(c) Statement (I) is true but Statement (II) is false.

(d) Statement (I) is false but Statement (II) is true.

[ESE-2012]
Question-18
The regions of operation of a MOSFET to work as a linear resistor
and linear amplifier are

(a) cut-off and saturation respectively

(b) triode and cut-off respectively

(c) triode and saturation respectively

(d) saturation and triode respectively

[ESE-2013]
Question-19
The following statements refer to an n channel FET operated in the active
region:

1. The gate voltage VGS reverse biases the GS junction.

2. The drain voltage VDD is negative with respect to the source.

3. The current in the n channel is due to electrons.

4. Increasing the reverse bias VGS increases the cross section for conduction.

Which of these statements are correct?

(a) 1 and 2 (b) 1 and 3

(c) 2 and 3 (d) 3 and 4

[ESE-2013]
Question-20
The value of the capacity reactance obtainable from a reactance
FET whose gm is 12 ms when the gate-to-source resistance is 1/9 of
the reactance of the gate-to-drain capacitor at frequency 5 MHz is-

(a) 650 Ω

(b) 750 Ω ത 𝛻(∈

𝛻. ത 𝑉) = −𝜌

(c) 775 Ω

(d) 800 Ω

[ESE-2013]
Question-21
Statement (I): MOSFET's are intrinsically faster than bipolar devices.

Statement (II): MOSFETs have excess minority carrier.

(a) Both Statement (I) and Statement (II) are individually true and
Statement (II) is the correct explanation of Statement (I).

(b) Both Statement (I) and Statement (II) are individually true but
Statement (II) is not the correct explanation of Statement (I).

(c) Statement (I) is true but Statement (II) is false.

(d) Statement (I) is false but Statement (II) is true.

[ESE-2013]
Question-22
Which of the following transistor is symmetrical in the same that
emitter and collector or source and drain terminals can be
interchanged?

(a) JFET

(b) MOSFET

(c) NPN transistor

(d) PNP transistor

[ESE-2014]
Question-23
When the drain voltage in an n-MOSFET is negative, it is operating
in

(a) active region

(b) inactive region

(c) ohmic region

(d) reactive region

[ESE-2015]
Question-24
Which is the important factor in the steady state characteristics of a
MOSFET?

(a) Current gain

(b) Transconductance

(c) Output resistance

(d) Drain-source voltage

[ESE-2015]
Question-25
In a 2-input CMOS logic gate, one input is left floating i.e.
connected neither to ground nor to a signal. What will be the state
of that input?

(a) 1

(b) 0

(c) same as that of the other input

(d) indeterminate (neither 1 nor 0)

[ESE-2016]
Question-26
The disadvantage of a typical MOSFET as compared to BJT is-

(a) Increased power-handling levels

(b) Reduced power-handling levels

(c) Increased voltage-handling levels

(d) Reduced voltage-handling levels

[ESE-2019]
Question-27
In a Field Effect Transistor (FET) the maximum voltage that can be
applied between any two terminals is given by

(a) Low |VGS| causing avalanche breakdown

(b) Low |VGS| causing avalanche breakdown

(c) |VDS| = 0 when gate is reverse-biased

(d) |VGS| = 0 when gate is reverse-biased

[ESE-2020]
Question-28
A depletion-type MOSFET can be operated in an enhancement
mode where negative charges are induced into n-type channel by
applying

(a) Positive Gate Voltage

(b) Negative Gate Voltage

(c) Positive Drain Voltage

(d) Negative Drain Voltage

[ESE-2020]
Question-29
The double base diode which is operated with the emitter forward
biased and a smaller emitter junction is called

(a) Field Effect Transistor (FET)

(b) Uni-Junction Transistor (UJT)

(c) Bipolar Junction Transistor (BJT)

(d) Metal Oxide Semiconductor Field Effect Transistor (MOSFET)

[ESE-2020]
Question-30
For depletion type MOSFET ID = 4.5 mA at VGS = – 2 V. What is the
value of IDSS if VP = – 5 V?

(a) 5.5 mA

(b) 12.5 mA

(c) 5.0 mA

(d) 15 mA

[ESE-2021]
 Answer Keys (Q. No. – 01 to Q. No. – 30)
1. D 11. C 21. C
2. B 12. B 22. A
3. A 13. B 23. B
4. D 14. C 24. B
5. C 15. C 25. D
6. C 16. C 26. B
7. B 17. A 27. A
8. C 18. C 28. A
9. A 19. B 29. B
10. B 20. * 30. B
Question-31
Which one of the following consists of a layer of metal at the top
named gate, a silicon dioxide layer below it, and a semiconductor
substrate as the bottom-most layer?

(a) JFET

(b) BJT

(c) MOSFET

(d) DMOSFET

[ESE-2021]
Question-32
The MOSFET is in the cut-off state, when the gate source voltage is

(a) less than gate to source voltage

(b) greater than gate to source voltage

(c) less than the threshold voltage

(d) greater than the threshold voltage

[ESE-2021]
Question-33
For an n-channel silicon FET with a = 3 × 10–4 cm and ND = 1015
electron/cm3, what is the pinch-off voltage if the dielectric constant
of silicon is
1
𝜀 = 12𝜀0 and 𝜀0 = × 10−9 ?
36𝜋

(a) 6.8 V

(b) 5.2 V

(c) 8.8 V

(d) 9.2 V

[ESE-2021]
Question-34
The common emitter configuration is widely used due to its

(a) low voltage and low power gain

(b) low voltage and high power gain

(c) high voltage and high power gain

(d) high voltage and low power gain

[ESE-2023]
Question-35
Consider the following statements regarding voltage-divider bias in a transistor:

1. The voltage-divider bias configuration uses two DC bias sources to provide

forward-reverse bias to the transistor.

2. The voltage-divider bias provides a very small base current to the transistor
compared to the bias current.

3. Two resistors R1 and R2 form a voltage divider that provides the base bias
voltage to the transistor.

Which of the above statements is/are correct?

(a) 1 and 2 only (b) 2 and 3 only

(c) 2 only (d) 1, 2 and 3

[ESE-2024]
Question-36
In an RC coupled amplifier, the gain decreases in the frequency response
due to the

(a) coupling capacitor at low frequency and bypass capacitor at high

frequency.

(b) coupling capacitor at high frequency and bypass capacitor at low

frequency.

(c) coupling junction capacitance at low frequency and coupling capacitor

at high frequency.

(d) device junction capacitor at high frequency and coupling capacitor at

low frequency.

[ESE-2001]
Question-37
For realizing a binary half-subtractor having two inputs A and B,
the correct set of logical expressions for the outputs D (A minus B)
and X (borrow) are

ҧ + 𝐴𝐵ത
1. The difference output 𝐷 = 𝐴𝐵

2. The borrow output 𝐵 = 𝐴𝐵ത

Which of the above statements is/are correct?

(a) 1 only (b) 2 only

(c) Both 1 and 2 (d) Neither 1 nor 2

[ESE-2016]
Question-38
Match List-I (Hybrid parameter) with List-II (Units/definitions) and
select the correct answer:

List-I List-II
A. Hie 1. Forward Current transfer ratio
B. Hfe 2. Ohms
C. hre 3. Siemens
D. Hoe 4. Reverse Voltage transfer ratio
Codes:
(a) A-2, B-1, C-3, D-4 (b) A-1, B-2, C-4, D-3
(c) A-1, B-2, C-3, D-4 (d) A-2, B-1, C-4, D-3

[ESE-2001]
Question-39
In an RC coupled common emitter amplifier

(a) Coupling capacitance affects the h.f. response and bypass

capacitance affects the L.f. response.

(b) Both coupling and bypass capacitances affect the h.f. response.

(c) Both coupling and bypass capacitances affect the L.f. response
only.

(d) Coupling capacitance affects the L.f. response and the bypass
capacitance affects the h.f. response.

[ESE-2003]
Question-40
Assertion (A): Transistor h-parameter equivalent circuit can be used for
the analysis irrespective of the configuration (CE, CB or CC) of the
transistor used.

Reason (R): The values of h-parameter remain unchanged with transistor

configuration.

(a) Both A and R are true and R is the correct explanation of A

(b) Both A and Rare true but R is NOT the correct explanation of A

(c) A is true but R is false

(d) A is false but R is true

[ESE-2003]
Question-41
What is the purpose of impedance matching between the output of
previous stage and input of next stage in a cascaded amplifier?

(a) To achieve high efficiency

(b) To achieve maximum power transfer

(c) To achieve reduced distortion

(d) To achieve reduced noise

[ESE-2006]
Question-42
Which of the following are true for h-parameters of transistors?

1. They are real numbers at audio frequencies.

2. They are easy to measure.

3. They vary widely with temperature.

Select the correct answer using the code given below:

(a) 1 and 2 only (b) 2 and 3 only

(c) 1 and 3 only (d) 1, 2 and 3

[ESE-2007]
Question-43
The input resistance Ri and output resistance R0 of an ideal current
amplifier, in ohms, are

(a) 0 and 0

(b) ∞ and 0

(c) and ∞

(d) ∞ and ∞

[ESE-2010]
Question-44
Assertion (A): If the output voltage waveform in a transistor amplifier is
a true replica of the input waveform, then it is said to be operated in class
A mode. The Q point cannot be fixed IC = 0.

Reason (R): The positive half cycle of the input will be clipped off in the
output due to transistor being drawn into cut-off from active region.

(a) Both A and R are true and R is the correct explanation of A

(b) Both A and R are true but R is NOT the correct explanation of A

(c) A is true but R is false

(d) A is false but R is true

[ESE-2011]
Question-45
Consider the following statements.

The h-parameters of a BJT:

I. Represent the input resistance, output conductance, current gain

etc.

2. Can be easily measured in the laboratory.

3. Can be used in circuit analysis over a wide range of frequencies.

4. Constitute a simple small signal model for easy circuit analysis

at low frequencies where junction capacitances can be neglected.
Which of these statements are correct?

(a) 1, 2, 3 and 4

(b) 1, 2 and 4

(c) 1, 3 and 4

(d) 2, 3 and 4

[ESE-2011]
Question-46
Statement (I): A good amplifier should not only amplify but also should
faithfully reproduce the input signal.

Statement (II): Distortion takes place in amplifiers due to non-linearity of the

devices.

(a) Both Statement (I) and Statement (II) are individually true and Statement
(II) is the correct explanation of Statement (l).

(b) Both Statement (I) and Statement (II) are individually true but Statement
(II) is not the correct explanation of Statement (l).

(c) Statement (I) is true but Statement (II) is false.

(d) Statement (I) is false but Statement (II) is true.

[ESE-2012J
Question-47
Statement (I): Both Coupling capacitance an emitter bypass capacitance affect
the low frequency response of an R-C-coupled amplifier.

Statement (II): Both stray capacitances and emitter-to-base diffusion capacitance

have a profound effect on the low frequency response of an R-C-coupled
amplifier.

(a) Both Statement (I) and Statement (II) are individually true and Statement (II)
is the correct explanation of Statement (l).

(b) Both Statement (I) and Statement (II) are individually true but Statement (II)
is not the correct explanation of Statement (l).

(c) Statement (I) is true but Statement (II) is false.

(d) Statement (I) is false but Statement (II) is true.

[ESE-2018]
Question-48
Which of the following conditions will be satisfied for an
impedance matched system?

(a) The decibel power gain is equal to twice the decibel voltage
gain.

(b) The decibel power gain is equal to the decibel voltage gain.

(c) The decibel power gain is half the decibel voltage gain.

(d) The decibel power gain is equal to the thrice the decibel voltage
gain.

[ESE-2019]
Question-49
The dB gain of cascaded system is simply

(a) The square of the dB gain of each stage.

(b) The sum of the dB gains of each stage.

(c) The multiplication of the dB gains of each stage.

(d) The division of the dB gains of each stage.

[ESE-2019]
Question-50
The Miller effect input capacitance CMi is

(a) (1 – Av2)Cf

(b) (1 – Av)Cf

(c) (1 – Cf)Av

(a) (1 – Cf2)Av

Where,

Cf = feedback capacitance

𝑉0
𝐴𝑣 =
𝑉𝑖

[ESE-2019]
Question-51
What is the power gain of transistor amplifier, if its current gain is
40 and voltage gain is 25?

(a) 100
If the input to a 7 flip-flop is a 100 MHz signal, the final
(b) 1200 output of three flip-flops in a cascade is
(a) 1000 MHz
(b) 520 MHz
(c) 1000 (c) 333 MHz
(d) 12.5 MHz
(d) 950 [ESE-2017]

[ESE-2022]
Question-52
Which one of the following statements is not correct regarding
common-base amplifier?

(a) The output is in the same phase as the input alternating signal.

(b) It cannot operate at higher frequency as compared to CE

amplifier.

(c) The current gain is less than unity.

(d) Impedance matching is needed when cascading because there

is very large difference in the input and output impedance, the
input impedance is low and the output high.

[ESE-2022J
Question-53
Which one of the following is a disadvantages of CE amplifier?

(a) It provides good current as well as voltage gain.

(b) It provides the maximum power gain of the three configuration.

(c) It has medium both input and output impedances.

(d) Its frequency response bandwidth is lower than the amplifiers

of the other two configurations.

[ESE-2022]
Question-54
Statement (I): When negative feedback is applied to the ideal amplifier, the
differential input voltage is zero.

Statement (II): There is no current flow into either input terminal of the ideal
op-amp.

(a) Both Statement (I) and Statement (II) are individually true and Statement
(II) is the correct explanation of Statement (l).

(b) Both Statement (I) and Statement (II) are individually true but Statement
(II) is not the correct explanation of Statement (l).

(c) Statement (I) is true but Statement (II) is false.

(d) Statement (I) is false but Statement (II) is true.

[ESE-2022]
Question-55
The junction FET is a three terminal

(a) voltage controlled voltage device

(b) current controlled voltage device

(c) voltage controlled current device

(d) current controlled current device

[ESE-2023]
Question-56
Consider the basic MOSFET circuit as shown in the figure with
variable gate voltage.

The MOSFET is given to have very large VA, VT = 4 V, IDSS = 8 mA.

What is the value of iD for VGS = 5 V? (where VA is a constant in the
range of 30 V to 200 V)

(a) 0.2 mA

(b) 0.5 mA

(c) 1.0 mA

(d) 2.0 mA

[ESE-2023]
Question-57
Which one of the following is the correct circuit symbol
representation of p-channel JFET?

(a) (b)
8

(c) (d)

[ESE-2023]
Question-58
Consider the following statements regarding FET amplifier
configurations :

1. For common-source and common-drain configurations, Rin =

R1||R2, which can be selected to be large during bias design.

2. For the common-drain configuration, the voltage gain is

generally less than unity or near unity.

3. For the common-gate configuration, the current gain cannot be

larger than unity.
Which of the above statement(s) is/are correct?

(a) 1 only

(b) 1 and 2 only

(c) 2 and 3 only

(d) 1, 2 and 3

[ESE-2023]
Question-59
Statement (I): MOSFETs are preferred over JFETs for digital
integrated circuits, either p-channel metal-oxide semiconductor or
n-channel metal-oxide semiconductor logic circuits can be
constructed.

Statement (II): The usage of a p-channel MOSFET as the active

load for an n-channel MOSFET leads to a logic family known as
complementary-symmetry MOS or 7 CMOS.
(a) Both Statement (I) and Statement (II) are individually true and
Statement (II) is the correct explanation of Statement (l).

(b) Both Statement (I) and Statement (II) are individually true but
Statement (II) is not the correct explanation of Statement (l).

(c) Statement (I) is true but Statement (II) is false.

(d) Statement (I) is false but Statement (II) is true.

[ESE-2023]
Question-60
What are the biasing states of collector-base junction and base-emitter
junction in the active region of a common-emitter transistor amplifier?

(a) Both collector-base junction and base-emitter junction are forward

biased

(b) Both collector-base junction and base-emitter junction are reverse

biased

(c) The collector-base junction is forward biased and the base-emitter

junction is reverse biased

(d) The collector-base junction is reverse biased and the base-emitter

junction is forward biased

[ESE-2024]
Question-61
Match the following lists:

List-I List-II
(n-p-n BJT operating regions) (n-p-n BJT characteristics)
A. Cutoff region 1. IC = FIB,
IB > 0,
VBE > VBE(on)’
VCE > VCE(sat)’
B. Saturation region 2. IC = IB = IE = 0,
VBE < VBE(on)’
VBC < VBC(on)
C. Forward active region 3. IB > 0, IC > 0,
IC < FIB,
VBE > VBE(on)
Select the correct answer using the code given below,

Codes:

P Q R

(a) 1 2 3

(b) 2 3 1

(c) 1 3 2

(d) 2 1 3

[ESE-2024]
Question-62
Consider the following statements regarding negative feedback in
amplifier circuits:

1. It has reduction in overall voltage gain.

2. It has enhanced frequency response.

3. It has higher output impedance.

Which of the above statements is/are correct?

(a) 1 and 2 only (b) 2 and 3 only

(c) 2 only (d) 1.2 and 3

LESE-2024]
Question-63
The important fact about the collector current is:

(a) It is greater than emitter current.

(b) It equals the base current divided by the current gain.

(c) It is small.

(d) It approximately equals the emitter current.

[ESE-2019]
 Question-64
In a grounded-emitter transistor, when emitter current becomes
zero in cut-off region the emitter potential is called

(a) Floating Emitter Potential

(b) Breaking Emitter Potential

(c) Cascading Emitter Potential

(d) Cut-off Emitter Potential

[ESE-2020]
 Question-65
When maximum reverse-biasing voltage is applied between the
collector and base terminals of the transistor and emitter is open
circuited, breakdown occurs due to

(a) Avalanche breakdown

(b) Avalanche multiplication

(c) Punch-through

(d) Reach-through

[ESE-2020]
 Question-66
In a CB configuration, the current amplification factor is 0.97. If the
emitter current is 1 mA, the value of base current is

(a) 0.97 mA

(b) 1.0 mA

(c) 0.03 mA

(d) 1.03 mA

[ESE-2021]
 Question-67
In a common base configuration, the alpha of the transistor is 0.99,
its collector current is 1 mA and the collector to base current with
emitter open is 1 µA. The value of base current is

(a) 29 µA

(b) 19 µA

(c) 9 µA

(d) 39 µA

[ESE-2021]
 Question-68
A transistor has beta  = 105 and IC = 840 µA. What is the value of
IB?

(a) 0.008 µA

(b) 0.08 µA

(c) 0.8 µA

(d) 8 µA

[ESE-2022]
 Question-69
Which one of the following statements is not correct for a
transistor?

(a) The region at the centre is always base region.

(b) Emitter region is more heavily doped and based region is very
lightly doped.

(c) Collector region is very lightly doped compared to base region.

(d) Low power input can be converted to a large power output

with the half of a small piece of semi conductor without any
hassles of preheating and handling of large heat dissipation.

[ESE-2022]
 Question-70
For certain of the reverse voltage in a transistor, the effective base
width may reduce to zero resulting into the voltage breakdown.
This phenomenon is called

(a) early effect

(b) avalanche multiplication

(c) punch through

(d) zones breakdown

[ESE-2022]
 Answer Keys (Q. No. – 31 to Q. No. – 70)
31. C 41. D 51. B 61. B
32. C 42. B 52. D 62. A
33. A 43. A 53. B 63. D
34. C 44. B 54. C 64.A
35. B 45. B 55. B 65. B
36. D 46. C 56. B 66. C
37. D 47. B 57. D 67. C
38. C 48. B 58. B 68. C
39. C 49. B 59. B 69. B
40. B 50. C 60. D 70. C