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Discussion 3

The document provides a detailed review of electrostatics and MOS-capacitors, covering key concepts such as Gauss's Law, Poisson's Equation, and boundary conditions. It discusses the behavior of MOS capacitors through different modes, including accumulation, depletion, and inversion, along with relevant equations and physical insights. Additionally, it includes examples and graphical representations to illustrate the charge, electric field, and potential across the devices.

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2 views2 pages

Discussion 3

The document provides a detailed review of electrostatics and MOS-capacitors, covering key concepts such as Gauss's Law, Poisson's Equation, and boundary conditions. It discusses the behavior of MOS capacitors through different modes, including accumulation, depletion, and inversion, along with relevant equations and physical insights. Additionally, it includes examples and graphical representations to illustrate the charge, electric field, and potential across the devices.

Uploaded by

ohenri100
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
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Discussion 3 Notes: Review of Electrostatics and MOS-Capacitors (9/18/05)

1. Quick Review on Electrostatics (1-d)

• Draw a simple capacitor (Fig Ex3.1B, page 95)


• Gauss’s Law
d εE
i. Differential Form: = ρ (Note: Even in 1-d, ? is in C/cm3 )
dx
x x

ii. Integral Form: ∫ d [εE( x' )] = εE (x ) − ε


xa
a E ( x a ) = ∫ ρ ( x' ) dx ' = Q( x )
xa
(how do you get Integral Form from Differential Form?)
(separation of variable)
• Poisson’s Equation
dϕ ( x)
i. Relationship between E- field and potential: E ( x ) = −
dx
d ϕ ( x)
2
ρ (x )
ii. =−
dx 2
ε
• Sign Conventions
i. E-field always points from positive charge to negative charge
• Boundary Conditions
i. e+E(0+)= e-E(0-) (without interface charge)
ii. e+E(0+) - e-E(0-) = Qfix (with interface charge)
iii. How to derive boundary condition from Integral Form? (3.13)
iv. f (x-)= f (x+)
• Example, derive C=Q/V using Gauss’s Law and Poisson’s Equation (use
the simple capacitor just drawn), Note that
i. After applying voltage V, at equilibrium, how does the charge
distribute?
ii. What’s the direction of the electric field? (+ve charge to –ve
charge)
iii. Any electric field out side the 2 charge sheets? (No, otherwise
charge will keep flowing until E-field disappears and E-field only
locates inside oxide!)
iv. Draw a Gaussian box surrounding the positive charge. How does it
cut the E- field? (No cutting at top but cutting at bottom)
v. Apply Gauss’s Law using Integral Form => eox Eox = Q
vi. What’s the relationship between E- field and potential drop across
dϕ ( x)
the oxide? E ( x ) = − , integration to get V= Eox ×tox (because
dx
E-field is constant, why? We assumed infinitely large planes)
vii. Therefore, V=Q(x)/ eox ×tox and we define capacitance as tox / eox
viii. Question: If there is fixed charge in oxide, we should use boundary
equation e+ E(0+) - e-E(0-) = Qfix . Is C=Q/V still valid? (Yes,
because we are interested in differential capacitance, C=dQ/dV in
most device problems.)

2. Go over the physical insights/pictures of MOS Capacitors from accumulation


mode to inversion mode briefly

• Thermal Equilibrium
i. n+ gate and p-sub are just resembling PN junction
ii. Space charge region in substrate is thick
iii. Space charge region in n+ gate is thin
1. Why? (heavily doped, recall depletion width equation)
2. Concept of sheet charge and delta charge
iv. QGo = - QBo
v. What’s the potential drop from gate to substrate? (f n+- f p+)
vi. Why there is potential drop even external bias is zero? (Concept of
build in voltage again)
• Flatband Voltage
i. To have zero potential drop by applying VFB
• Accumulation Mode (V GB<VFB )
i. Just a simple capacitor
• Depletion
i. Surface electron concentration is much smaller than the acceptor
ion concentration
ii. ns=ni×10f s/60mV
iii. When will it be significant? ns = Na => f s = - f p+
• Inversion
i. Threshold voltage equation
1. VTn = VFB - 2f p+ + 1/Cox × (2qeN a(-2f p+))0.5
2. What’s the physical meaning of each term?
3. Example of MOSCAP
• Use Example 3.7 (page 146-148)
• Part a): accumulation mode, draw and describe qualitative ly the charge,
E-field and potential vs. distance graphs. Concepts (simple capacitor and
delta charge)
• Part b): substitution
• Part c): inversion mode, draw and describe qualitative the charge, e- field
and potential vs. distance. Concepts (similar to page 160, figure 3.34, E-
field in oxide is triple that in Si, don’t have to indicate numerical values,
note all the turning points and abrupt points and give physical insights)
• Skip Part d) if time does not allow.

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