Question 1.

(10 points)
Below shows a layout (top view) of a circuit implemented in CMOS technology. The circuit consists of a
transistor, a resistor, and a capacitor. VDS

&
(a) Please draw the schematic of the circuit. [2 pts]
out

Vin
-

I
-

(b) What is the W/L ratio of the transistor? [2 pts] * = =

10

(c) Find the resistance of the polysilicon bar. [3 pts]

R=
= x0x0
g5 , = 15625 er

(d) Find the capacitance of the parallel plate. [3 pts]

C =
x =
xbx4x8854x =
To

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 Question 2. (5 points)
An input step is given at t = 0 to the below RC circuit.
(a) Please “sketch” the voltage waveform at vo. [2 pts]
(b) Please derive an expression for the “dynamic error” as a function of sampling time (ts).
[3 pts]

The dynamic error is defined as the voltage difference between vo at ts and the vo at t = ∞.

high-pass
Vo

i
time domain

(D-V)
Vo

L
R

>
-
t
t = o

abs Vo =
-
2 - -

R
Vo(s) 0
E
=

# Vo =

- RCV
Vo(ts) =
e dt
to

error F
E S-domain

Iit
-

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 Question 3. (13 points)
Below is an ideal op-amp circuit that can be used to scale and add a DC bias to a pure AC input
signal 𝑣𝑖𝑛 . 𝑉𝐷𝐷 is a DC signal.

VDD

2R
R
vin +
vout
-
R

a) (3 points) Solve for the output voltage 𝑣𝑜𝑢𝑡 as a function of 𝑉𝐷𝐷 using the principle of
superposition to zero 𝑣𝑖𝑛 .
Hint: Since 𝑉𝐷𝐷 is a DC signal, you may consider that the capacitor has infinite impedance.

+=
=
RIY) U += (1 +
Vaut
(
= 1 +

Vent = (1 + 1)
=
b) (3 points) Solve for the output voltage 𝑣𝑜𝑢𝑡 as a function of 𝑣𝑖𝑛 , 𝑅, and 𝐶 using the
principle of superposition to zero 𝑉𝐷𝐷 .

Ut = [RXWin =
n

R + 2R

( * U+
Vaut
(1 RIY) U
= + +=

Want =

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 𝑣𝑜𝑢𝑡
c) (4 points) Using the answer from part (b), draw the magnitude plot for the transfer
𝑣𝑖𝑛
function. Label the low frequency gain, the high frequency gain, as well as pole(s) and/or
zero(s).
SE low freg gain is
E(t =
+ 1

Yout =

SRC + #
high freg .

gain = 213
at : 1/RC
one
pole
one zero at : 2/RC

20
log (4/3) -

!
= 2 5 dB
.

·
20log(2/3).
-
-
-
-

"
-

= 3 5 dB
Trad(s]
-

URC

d) (3 points) Using the sum of answers from part (a) and (b), draw the total output signal
𝑣𝑜𝑢𝑡 for the input signal 𝑣𝑖𝑛 drawn below. Assume 𝑣𝑖𝑛 has much lower frequency than
1
and that there is no clipping. Label minimum, average, and maximum values in terms
𝑅𝐶
of 𝑉𝐷𝐷 .

S ,
then out
, total
Vin Vout
1 ------- +

-1
0 T
4
T
2
3T
4
T
t

2-
2
2
--------
T
4
T
2

-
3T
4
T

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 MO S

x=0

Question 2. (14 points)

For a MOSCAP with p-type substrate. Given VFB = -0.4 V, NA= 1016 cm-3, oxide (𝜀𝑜𝑥 =6𝜀0 )
thickness of 10nm, and semiconductor 𝜀𝑠 =12𝜀0 . At 300K and ni=1010cm-3. The right-hand side
is the semiconductor. x=0 at the oxide-semiconductor interface.
a. (3 points) Calculate the threshold voltage.
b. (4 points) Draw the charge density, electric field, and potential profile at the voltage
right before the threshold. Please mark tox, WD, ES, and Eox on your plot. Please express
Eox as a function of ES. Also symbolically mark the value of charge density and the
surface potential with 𝜙𝑝 (it has a certain expression when reaching the threshold, use
𝑘𝑇 𝑁
𝜙𝑝 = − ln ( 𝑛𝐴)). No need to compute numerical values.
𝑞 𝑖
c. (3 points) Draw the CV plot. Please symbolically mark all critical values. No need to
compute Cmin. Just express it as Cox and Cdep.
d. (4 points) At the same bias condition, if the VFB increases to -0.3V, how will the QG
change? Please draw the QG-V plot before and after the VFB changes on the same figure
and explain it. No need to compute numerical values.

a
-
V = VIB-29p Cox = 5 m
NA
-

-p =

E -

Mi
=
0 .
36V

V = 0, 4 + 0 . 72 +
0 .

093 = 0 .
4/3V
E
b .
Q I

#
Eox
= 2 Es

-
Es

I I S

Wa

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 V
-

--

24p
I 3
-

tox Wa

C T

-
Cox

I
I
-

I
<min
2 x ep
=
VFB
VT

QG
da M

before

+ ↓ After
Qa
-
- I
↓
↓ -

I I >
if consider the
2
decreases
sign
VF VFB V V For IQGI ,
↓
↓
in inversion and depletion region,
it decreases
.

in accumulation region ,
it increases .

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 Question #3. (16 points)
An N-channel MOSFET has the following parameters: W=10 𝜇m, L=1 𝜇m, Cox=4.5 fF/𝜇m2, the
oxide relative permittivity is 4, NA = 1015 cm–3, ni=1010cm-3, VTN=0.5 V, 𝜇n = 800 cm2/V/s, at
300K.
a. (3 points) Calculate the inversion charge density (C/𝑐𝑚2 ) at the drain end of the channel
at VGS=1V and VDS=0.4V. Since here we are talking about the charge in the channel, it
will be negative. QG=-Qch
b. (6 points) Ignore body effect and channel length modulation. Draw the IDS versus VDS
plot at VGS=1V. Please mark the numerical value of the saturation current, the VDS at
the onset of saturation, and the ID at VDS=0.2V. Please use mA as the unit.
c. (3 points) Briefly explain channel length modulation.
𝜕𝐼
d. (4 points) Calculate the output resistance at VGS=1V and VDS=0.2V using ro=( 𝐷𝑆 )−1.
𝜕𝑉𝐷𝑆
It is not the same as the one in the saturation region. Do not directly use that.

a
=
Cox (Vap - V) = -
4 ,
5x157 2
"
(0 .
6 -
0 .
5)

= -

4 .
5458 %m

0 .
45mA

VDs
7

0 2V
.

Visat = 1 -0 5 .
=
0 . 5v

Ipsat =

MWCox (Vns-V ) +
=
305 =
0 .
45mA

IDLIN
MaWCox (Vas-Vi-z(s
Vos
=

=
3 .
6x104x02
0-5- 0
1
0 288 mA
.

= .

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C
Pinch off increases when Vas increases which
region
.

reduces the effective Land Its increases.

d
MNCox (os-Vi)Vos-
Triode
region Ips
.
=

= Mox (Vas-V +
-

Vps)

=
3 . 6x10 x
(0 5 .
- 0
.
2)
= 108x/03

to =

yo
i
=

925 .
93 ve

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Question D5. (17 points)
Below is a circuit composed of a single transistor amplifier and a current mirror. You may
assume all three transistors are in saturation, have the same parameters, and ignore body effect.
The following parameters are given: 𝑔𝑚 = 2 mS, 𝑅𝐿 = 4 𝑘𝛺, 𝑟𝑜 = 100 𝑘𝛺.
VDD VDD

M1 Ibias
vin
Vbias

C∞
vout

RL M2 M3
+
VGS
_

a) (2 points) Assuming negligible 𝐼𝐷𝑆 dependence on 𝑉𝐷𝑆 , what is the total current through
M2 as a function of 𝐼𝑏𝑖𝑎𝑠 ?

FDs , m2 = Isias (current mirror)

b) (4 points) Draw the small signal model of this circuit including 𝑟𝑜 of the transistors (do
not use the simplified two-port model).
Hint: you can leave out M3 and greatly simplify M2.

61 DA
-

Use
-
O

Sin
&
b
N

! ·

S1/D2 o Nout

R
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 𝑣𝑜𝑢𝑡
c) (4 points) Using the small signal model in (b), solve for the input to output gain 𝑣𝑖𝑛
(numerical answer).
-gmU
out +
KCL at Vast :

>
-

Im Win =
Get + Kent-InVin-Not other RelIvo + = qm ((1/gm) /l (Rullro) II ro)
at

Im 9m(Rullro)
>
-

Em +
intro +
to gm(Rulltd) + 1 +
&
0 002 (4000 000)

V
,
1/100
.

~
0 881
.
V

0 . 002(400011100000) + 1 +
10/1000 v

d) (4 points) Now, consider the effect of parasitic capacitors 𝐶𝐷𝐵 = 10 𝑓𝐹 and 𝐶𝑆𝐵 =
10 𝑓𝐹 at both M1 and M2. Given the body is grounded, add 𝐶𝐷𝐵 and 𝐶𝑆𝐵 to the small
signal model and calculate the total equivalent capacitance at the output 𝑣𝑜𝑢𝑡 (numerical
answer).
Hint: Some capacitors might be “shorted” and can be ignored.
61 3

T I

e
-
O

Sin bN Vo CBI
D

I
-

"

can ignore " shorted

!
,
-

out
o

R
I&

E
Vo CDB2

: I

E N
& can imore "shorted!
,

Cout CsBa +
CDB2 13
(sB CDB 20
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fF
= = + =
 e) (3 points) If the output node 𝑣𝑜𝑢𝑡 has a much larger time constant than the other nodes,
estimate the 3dB frequency of this amplifier using the OCTC method (numerical answer).

61 DA

-T
Win
shorted To
-

=
I emVest
-
Vo
-

12

Un

R
·

Vo

evagm-
in =
vx(qm
+ +
RulIVo
+
t) - Otherat
=
(1gm/l (RelIto) 11 ro)
-
R2 Il Vo

Reg =
-

r 9m(iro) + 1
+

(4000 11 100
, 000)
440S
Reg
= =
000000
0 . 002(400011000000) + 1
+

13 x 10" rad
Wadiscont = 1 .
.

01 X 10. Mz

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Semiconductor and device physics equations and constants:

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Laplace Transform Pairs Opera onal Laplace transforms

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