SUMMER HOLIDAY HOMEWORK ASSIGNMENT

CLASS: XII
SUBJECT:- PHYSICS
CHAPTER:- SEMICONDUCTOR ELECTRONICS: MATERIALS, DEVICES
AND SIMPLE CIRCUITS

I. MULTIPLE CHOICE QUESTION

1) A p-type semiconductor is
a) Positively charged
b) Negatively charges
c) Uncharged
d) Uncharged at 0K but charges at higher temperatures

2) Number of electrons in the valence shell of a pure semiconductor is

a) 1
b) 2
c) 3
d) 4

3) In a half wave rectifier, the r.m.s. value of the a.c. components of the
wave is
a) Equal to d.c. value
b) More than d.c. value
c) Less than d.c. value
d) Zero

4) In semiconductors, at room temperature

a) The conduction band is completely empty
b) The valence band is partially empty and the conduction band is partially
filled
c) The valence band is completely filled and the conduction band is
partially filled
d) The valence band is completely filled

5) Barrier potential of a P-N junction diode does not depend on

 a) Doping density
b) Diode design
c) Temperature
d) Forward bias

6) If the two ends of a p-n junction are joined by a wire

a) There will not be a steady current in the circuit
b) There will be a steady current from the n-side to the p-side
c) There will be a steady current from the p-side to the n-side
d) There may or may not be a current depending upon the resistance of the
connecting wire
7) Forward biasing is that in which applied voltage
a) Increases potential barrier
b) Cancels the potential barrier
c) In equal to 1.5 volt
d) None of these

8) When p-n junction diode is forward biased then

a) Both the depletion region and barrier height are reduced
b) The depletion region is widened and barrier height is reduced
c) The depletion region is reduced and barrier height is increased
d) Both the depletion region and barrier height are increased

9) Filter circuit
a) Eliminates a.c. component
b) Eliminates d.c. component
c) Does not eliminate a.c. component
d) None of these

10) Bridge type rectifier uses

a) Four diodes
b) Six diodes
c) Two diodes
d) One diodes

11) What is the resistivity of a pure semiconductor at absolute zero?

a) Zero
b) Infinity
 c) Same as that of conductors at room temperature
d) Same as the insulators at room temperature

12) What is the charge on a hole in a semiconductor?

a) Positive
b) Negative
c) Neutral
d) Cannot be determined

13) A p-n junction diode is used as:

a) Amplifier
b) Rectifier
c) Oscillator
d) Filter

14) In a p-type semiconductor, the majority carrier are:

a) Electrons
b) Holes
c) Protons
d) Neutrons

15) The energy gap in a semiconductor lies between:

a) 0-1 eV
b) 1-3 eV
c) 3-5 eV
d) 5-10 eV

16) In an intrinsic semiconductor, the number of electrons is equal to the

number of:
a) Donors
b) Acceptors
c) Holes
d) Neutrons

17) The reverse bias in a diode:

a) Increases current flow
b) Blocks majority carrier flow
 c) Allows large current
d) Reduces resistance

18) Zener diode is used for:

a) Rectification
b) Amplification
c) Voltage regulation
d) Oscillation

19) The process of adding impurity to a semiconductor is called:

a) Doping
b) Biasing
c) Filtering
d) Rectifying

20) A transistor can be used as a:

a) Resistor
b) Amplifier
c) Rectifier
d) Capacitor

II. ASSERTION AND REASON QUESTIONS:

The following questions consist of two statement:-

 (a) Both, A and R, are true and R is the correct explanation of A

 (b) Both, A and R, are true but R is not the correct explanation of A

 (c) If A is true but R is false

 (d) If A is false but R is true

1. Assertion: A pure semiconductor has a negative temperature coefficient

of resistance.
Reason: In a semiconductor, raising the temperature releases more
charge carriers, increasing conductance and decreasing resistance.
 2. Assertion: If the temperature of a semiconductor is increased, its
resistance decreases.

Reason: The energy gap between the conduction band and valence band
is very small.

3. Assertion: In semiconductors, thermal collisions are responsible for

taking a valence electron to the conduction band.

Reason: The number of conduction electrons increases with time as

thermal collisions continuously take place.

4. Assertion: A p-type semiconductor is a positive type crystal.

Reason: A p-type semiconductor is an uncharged crystal.

5. Assertion: Silicon is preferred over germanium for making

semiconductor devices.
Reason: The energy gap in germanium is more than the energy gap in
silicon.

III. CASE BASED QUESTIONS:

Cased Based Question 1:

It is a heavily doped p-n junction which under forward bias emits spontaneous
radiation. The diode is encapsulated with the transparent cover so the emitted
light can come out. When the diode is forward biased, electrons are sent from
n  p (where they are majority carriers) and holes are sent from p  n (where
they are majority carriers). At the junction boundary, the concentration of
minority carriers increases as compared to the equilibrium concentration (i.e.,
when there is no bias).
Thus at the junction boundary on either side of the junction, excess minority
carriers are there which recombine with majority carriers near the junction.
On recombination, the energy is released in the form of photons. Photons with
energy equal to slightly less than the band gap are emitted. When the forward
current of the diode is small, the intensity of light emitted is small. As the
forward current increases, intensity of light increases and reaches a maximum.
Further increase in the forward current increases, intensity of light increases
and reaches a maximum. Further increase in the forward current results in
decrease of the intensity. LED’s are biased such that the light emitting
efficiency is maximum.
The V-I characteristics of a LED is similar to that of a Si junction diode. But, the
threshold voltages are much higher and slightly different for each colour. The
reverse breakdown voltages of LED’s are very low. Typically around 5 V. So care
should be taken that higher reverse voltages do not appear across them. LED’s
that can emit red, yellow, orange, green and blue light are commercially
available.
Read the above case/passage and answer the following questions:
(i) LED is a:
a) Lightly doped p-n junction diode.
b) Heavily doped p-n junction diode.
c)Moderately doped p-n junction diode.
d)Two back to back p-n junction diode.
(ii) LED emits light:
(a) when reversed biased.
(b) when forward biased.
(c) when forward or reverse biased.
(d) when heated.
(iii) During recombination at the junction, emitted photons have:
(a) energy equal to or slightly less than the band gap.
(b) energy greater than the band gap.
(c) energy which has no relation with the band gap.
(d) very low energy compared to band gap.
(iv) Threshold voltage of LED is:
(a) lower compared to other p-n junction diodes and slightly different for each
colour.
(b) lower compared to other p-n junction diodes and same for all colours.
(c) higher compared to other p-n junction diodes and same for all colours.
(d) higher compared to other p-n junction diodes and slightly different for each
colour.
(v) The reverse breakdown voltages of LED’s are:
(a) very low and typically around 0.5 V.
(b) very high and typically around 50 V.
(c) very low and typically around 5 V.
(d) very low and typically around 0.05 V.

Cased Based Question 2:

Semiconductors play a crucial role in modern electronics. The most common

semiconductor materials are silicon (Si) and germanium (Ge). These materials
have electrical conductivity between conductors and insulators, and their
properties can be significantly altered through a process called doping, which
introduces impurities to increase charge carriers.

Semiconductors are classified as intrinsic (pure) or extrinsic (doped). In an n-

type semiconductor, the majority carriers are electrons, while in a p-type, they
are holes. By joining these two types, we get a p-n junction diode, a device
that conducts current primarily in one direction. When forward biased, the p-n
junction allows current to flow. In reverse bias, it blocks current until a certain
threshold known as the breakdown voltage is reached.

Transistors are another fundamental semiconductor device. A bipolar junction

transistor (BJT) consists of three regions – emitter, base, and collector. In an n-
p-n transistor, a small base current controls a much larger collector current,
enabling the transistor to act as an amplifier. These properties are exploited in
electronic circuits such as amplifiers, oscillators, and logic gates.

One of the practical applications of semiconductors is in light-emitting diodes

(LEDs), which emit light when forward biased. The energy of the emitted
photons is directly related to the band gap of the semiconductor material
used. Another important application is the photodiode, a device that operates
in reverse bias and is sensitive to light. It converts light into

systems. electrical current and is used in automatic lighting systems, solar

panels, and optical communication.
With the advent of digital electronics, logic gates formed from semiconductor
devices are the building blocks of all digital circuits. Basic gates like AND, OR,
and NOT are used to perform logic operations in computers, calculators, and
embedded

Read the above case/passage and answer the following questions:

Q1. What is the role of doping in semiconductors?

a) To make them magnetic
b) To increase resistance
c) To introduce more charge carriers
d) To convert them into insulators

Q2. In a p-n junction diode.

a) Current flows in both directions
b) Current flows in forward bias only
c) Current flows in reverse bias only
d) No current flows at all region

Q3. Which region is doped and very thin?

a) Emitter
b) Base
c) Collector
d) Substrate

Q4. An LED emits light when:

a) Reverse biased
b) Forward biased
c) At zero bias
d) Connected in parallel

Q5. Which of the following devices is used to detect light and convert it into
current?
a) LED
b) p-n junction diode
c) Transistor
d) Photodiode

IV. NUMERICALS:
 1. Distinguish between N-type and P-type semiconductors on the basis of
energy band diagrams

2. Explain how an intrinsic semiconductor can be converted into N-type and

P-type semiconductor. Give one example of each and their energy band
diagrams.

3. Explain the term ‘drift velocity’ of electrons in conductor. Hence, obtain

an expression for the current through a conductor in terms of ‘drift
velocity’.

4. When a Zener diode considered as a special purpose semiconductor

diode? Draw the I-V characteristics of Zener diode and explain briefly,
how reverse current suddenly increase at the breakdown voltage?
Describe briefly with the help of the circuit diagram, how a Zener diode
works to obtain a constant DC voltage from the unregulated DC output
of a rectifier.

5. If the output of a 2 input NOR gate is fed as both inputs A and B to

another NOR gate, write down a truth table to find the final output, for
all combinations of A, B.

V. 2 MARKS QUESTIONS

1. Write the application of P-N junction.

2. Write example for trivalent and pentavalent dopants?
3. Write the relation between mobility and Hall coefficient?
4. Define the word Depletion layer?
5. State Hall effect?
VI. 3 MARKS QUESTIONS

1.Define the following terms:

(i) Doping

(ii) Majority and minority carriers

(iii) Depletion region

2. Explain the use of a photodiode. How does it work? Draw its I-V
characteristics.

3. What is the difference between forward bias and reverse bias in a p-n
junction diode? How does each affect the current?

VII. 5 MARKS QUESTIONS

1. What is a transistor? Explain its working as a common emitter amplifier

with the help of a circuit diagram. Also derive an expression for voltage
gain and define current gain (β).

2. Discuss the working of a full-wave rectifier using two p-n junction diodes.
Draw the circuit diagram, input/output waveforms, and explain the role
of the transformer and filter.
ANSWER KEY:

I. ANSWERS FOR MCQ’S:

1. C
2. D
3. b
4. b
5. b
6. a
7. b
8. a
9. a
10. a
11. b
12. a
13. b
14. b
15. a
16. c
17. b
18. c
19. a
20. b

II. ANSWERS FOR A&R:

1. (a)
2. (b)
3. (c)
4. (d)
5. (c)
 III. ANSWER FOR CASE STUDY QUESTIONS:

CASE STUDY QUESTION 1:

1. (b)
2. (b)
3.(a)
4.(d)
5.(c)

CASE STUDY QUESTION 2:

1.(c)
2.(b)
3.(b)
4.(b)
5.(d)

IV. NUMERICALS:

ANSWER 1:

Feature N-type Semiconductor P-type Semiconductor

Doping element Pentavalent (e.g., Phosphorus) Trivalent (e.g., Boron)
Majority carriers Electrons Holes
Minority carriers Holes Electrons
Fermi level position Closer to the conduction band Closer to the valence band
Energy band diagram Fermi level shifts upwards Fermi level shifts downwards

ANSWER 2:

Intrinsic Semiconductor: A pure semiconductor (e.g., pure silicon or germanium) with

equal number of electrons and holes.

a) Conversion:

 To N-type: Add pentavalent impurity (e.g., Phosphorus).

o Increases electron concentration ⇒ electrons become majority carriers.

o Each impurity atom donates one free electron.

o Energy Band: Fermi level shifts closer to conduction band.

  To P-type: Add trivalent impurity (e.g., Boron).

o Increases hole concentration ⇒ holes become majority carriers.

o Creates "holes" by accepting electrons.

o Energy Band: Fermi level shifts closer to valence band.

Examples:

 N-type: Silicon doped with Phosphorus.

 P-type: Silicon doped with Boron.

ANSWER 3:

Drift Velocity (vₑ):

The average velocity acquired by free electrons in a conductor under the influence of an
electric field.

b) Expression for Current:

Let:

 n = number of free electrons per unit volume

 A = cross-sectional area of the conductor
 e = charge of electron
 vd = drift velocity

Then, total current I is:

I=nAevd

ANSWER 4:

A Zener diode is designed to work in reverse bias beyond a specific voltage called Zener
breakdown voltage.

I-V Characteristics:
  Forward Bias: Similar to normal diode.
 Reverse Bias: At Zener voltage, current rises rapidly — the diode conducts.

Zener Voltage Regulation Circuit:

Circuit Diagram Description:

 A Zener diode is connected in reverse bias across the load.

 A series resistor is connected to limit current from the unregulated power supply.

Working:

 If input voltage increases, Zener conducts more and maintains constant output
voltage.
 If input decreases but is above Zener voltage, the output remains constant.

ANSWER 5:

Given:
The output of a 2-input NOR gate is fed as both inputs to another NOR gate.

Let the original inputs be A and B.

First NOR gate:

Second NOR gate with Y fed as both inputs:

So, this acts like an OR gate.

Truth Table:
V. ANSWER FOR 2 MARK QUESTIONS:

ANS 1: A P-N junction has several important applications in electronics:

 Diodes: Used for rectification (AC to DC conversion).

 Light Emitting Diodes (LEDs): Emit light when forward biased.
 Photodiodes: Detect light and convert it into electrical signals.
 Solar Cells: Convert light energy into electrical energy.
 Zener Diodes: Provide voltage regulation in circuits.
 Transistors: Built using multiple P-N junctions for amplification and switching.

ANS 2:  Trivalent dopants (used for P-type semiconductors):

 Boron (B)
 Gallium (Ga)
 Indium (In)

 Pentavalent dopants (used for N-type semiconductors):

 Phosphorus (P)
 Arsenic (As)
 Antimony (Sb)

ANS 3:
ANS 4: The Depletion layer is the region around the P-N junction where mobile charge
carriers (electrons and holes) have diffused across the junction and recombined, leaving
behind immobile ionized donor and acceptor atoms.

 This region is depleted of free charge carriers.

 It acts as an insulating layer preventing current flow under zero bias.
 Electric field develops across it, forming a potential barrier.

ANS 5: Statement:
When a magnetic field is applied perpendicular to the direction of current in a conductor or
semiconductor, a voltage (Hall voltage) is developed across the material in the direction
perpendicular to both the current and the magnetic field.

Applications:

 Determining type of semiconductor (N-type or P-type)

 Measuring carrier concentration
 Measuring magnetic field strength

VI. ANSWER FOR 3 MARK QUESTIONS:

ANS 1: (i) Doping

Doping is the process of intentionally adding impurities (dopants) to a pure (intrinsic)

semiconductor to modify its electrical properties.

 Pentavalent atoms (e.g., Phosphorus) produce N-type semiconductors.

 Trivalent atoms (e.g., Boron) produce P-type semiconductors.

(ii) Majority and Minority Carriers

 Majority carriers: The charge carriers that are present in greater concentration in a
semiconductor.
o N-type: Electrons
o P-type: Holes
 Minority carriers: The less abundant charge carriers.
o N-type: Holes
o P-type: Electrons

(iii) Depletion Region

The depletion region is the area around the P-N junction where free electrons from the N-
region and holes from the P-region recombine.

 It becomes depleted of mobile carriers.

 Contains immobile, ionized donor and acceptor atoms.
  Acts as a barrier to current under no or reverse bias.

ANS 2: Use of Photodiode

A photodiode is used to detect light and convert it into an electrical current. Applications
include:

 Light sensors
 Solar panels
 Optical communication systems
 Barcode scanners

Working Principle

 Operates in reverse bias.

 When light photons strike the depletion region, they generate electron-hole pairs.
 These carriers are swept across the junction due to the electric field.
 This results in a photocurrent proportional to light intensity.

I-V Characteristics:

 In dark: Very small leakage current (dark current).

 Under light: Current increases in reverse bias with light intensity.

ANS 3: Effect on Current:

 Forward Bias: Current flows easily once threshold voltage is reached (0.7V for Si,
0.3V for Ge).
  Reverse Bias: Only a small leakage current flows until breakdown voltage is
reached.

VII. ANSWER FOR 5 MARK QUESTIONS:

ANS 1: A transistor is a three-layer, three-terminal semiconductor device used to amplify

or switch electronic signals.
Types: NPN or PNP
Terminals: Emitter (E), Base (B), Collector (C)

Input is applied between base and emitter.

 Output is taken between collector and emitter.

 Rc: Collector resistor

 Re: Emitter resistor (can be bypassed by capacitor)

 Rb: Base biasing resistor

 1. Common Emitter (CE) Amplifier
a) Circuit Diagram:

 Input is applied between base and emitter.

 Output is taken between collector and emitter.

 Rc: Collector resistor

 Re: Emitter resistor (can be bypassed by capacitor)

 Rb: Base biasing resistor

ANS 2: A full-wave rectifier converts both halves of the AC input signal into DC using
two diodes and a center-tapped
transformer.

 D1 and D2: Diodes

 Transformer: Center-tapped
secondary provides two equal but
opposite voltages

 Load: Across which output is

taken

2. Working

 During the positive half-

cycle, D1 conducts, D2 is off.
 During the negative half-cycle, D2 conducts, D1 is off.
 Both half cycles produce current in the same direction through the load, resulting in
full-wave rectification.
 2. Input/Output Waveforms
a) Input (AC):

Output (Rectified):

3. Role of the Transformer

 Steps up/down the input voltage.

 Provides center-tap to create two equal and opposite voltages.

4. Role of the Filter (Usually a Capacitor)

 Smooths the pulsating DC.

 Charges during peaks and discharges during valleys, reducing ripple.

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