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Tutorial#10

The document outlines Assignment #10 for the EE3001: Solid State Devices course, detailing problems related to MOS capacitors and their characteristics. Students are encouraged to solve the problems independently and seek help from TAs if needed. Key concepts include threshold voltage, flat-band voltage, and C-V characteristics, with specific values and assumptions provided for calculations.

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14 views2 pages

Tutorial#10

The document outlines Assignment #10 for the EE3001: Solid State Devices course, detailing problems related to MOS capacitors and their characteristics. Students are encouraged to solve the problems independently and seek help from TAs if needed. Key concepts include threshold voltage, flat-band voltage, and C-V characteristics, with specific values and assumptions provided for calculations.

Uploaded by

ee23b029
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
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Download as PDF, TXT or read online on Scribd
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EE3001: Solid State Devices

TAs: Alias George ([email protected]) and Binoy M ([email protected])


Assignment #10

Try yourself to solve the problems with detailed steps. Take a limited time quiz to test
your understanding on related concepts.
Problems will be discussed in class. You need to contact TAs or teacher if you are unable
to do anything useful by yourself or with the help of your friends.
If needed, assume the following values by default unless otherwise specified: Si is
the default semiconductor; SiO2 is the default oxide; T @room temperature is 300
K; ni @room temp. = 1010 cm−3 ; k B T=0.026 eV (at room temperature); EG,Si = 1.12 eV
and temperature independent; at 300 K, Nc =3.2 × 1019 cm−3 , Nv =1.8 × 1019 cm−3 , µn =
1350cm2 /V.s, µ p = 450cm2 /V.s; Permittivity for vacuum: ϵ0 =8.85 × 10−14 F/cm, relative
permittivity: ϵr,Si =11.8, ϵr,SiO2 =3.9; pn diode dopants are completely ionized.

1. (1 point) In a metal/SiO2 /p-Si MOS capacitor, the SiO2 layer thickness is tox and the
doping concentration of the p-type substrate is NA . The threshold voltage of the MOS
capacitor will definitely increase if (pick the correct option)
(A) tox is decreased and NA is increased
(B) tox is increased and NA is decreased
(C) both tox and NA are decreased
(D) both tox and NA are increased

2. (8 points) (a) Assuming that the flatband voltage (VFB ) is zero, find the threshold
voltage in the ideal case for a MOS capacitor with a substrate doping concentration
NA =1015 /cm3 and the gate oxide thickness tox = 100 nm.
(b) Repeat the same for different substrate doping concentrations (i) NA = 1014 /cm3 ;
(ii) NA = 1016 /cm3 ; (iii) NA = 1017 /cm3
(c) If the above MOS capacitors have Aluminium gate, find the threshold voltage in
each case considering the difference in work function. [Electron affinity of silicon is
4.05 eV and work function of Aluminium is 4.1 eV]
(d) Repeat the same for MOS capacitors with (i) n+ polysilicon gate and (ii) p+ polysil-
icon gate

3. (10 points) Fig. 1 shows the C-V characteristics of a metal-oxide-silicon (MOS) capac-
itor, where the doping concentration in silicon is 2 × 1016 /cm3 and the metal has a
work function (qϕm ) of 4.1 eV. For silicon, the electron affinity (qχs ) is 4.05 eV. Assume
that there are no charges in the oxide.
(a) What is the type (n-type/p-type) of silicon? Give reasons.

1
Figure 1: Bias dependent capacitance in MOS device.

(b) At what frequency (high frequency/low frequency) was the C-V characteristics
measured? Give reasons.
(c) If the area of the capacitor is 1 mm2 , what is the gate oxide thickness (tox )?
(d) What is the flat-band voltage (VFB )?
(e) What is the threshold voltage (Vth )?
(f) What is the minimum capacitance (Cmin ) in the C-V characteristics?

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