Reference 03
Reference 03
DOI: 10.1002/mmce.21628
RESEARCH ARTICLE
KEYWORDS
Int J RF Microw Comput Aided Eng. 2018;e21628. wileyonlinelibrary.com/journal/mmce © 2018 Wiley Periodicals, Inc. 1 of 12
https://doi.org/10.1002/mmce.21628
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environment. Microstrip line, coplanar strip line (CPS) and CPW slot antenna and its performance. Section 4 describes
coplanar waveguide are the transmission lines used for the the implementation of the rectifier circuit, design and analy-
rectenna.7 Compared with the CPS and the CPW, the micro- sis of the broadband rectenna. Further this section measures
strip line needs a ground via for connecting the active com- and analyses the rectenna conversion efficiency and output
ponents present in the rectifier. The coplanar strip lines are DC voltage. Finally, Section 5 presents the conclusion and
suitable for the design of the rectenna, but require addition the future scope of the work.
balun circuit for measurement.8,9 The CPW transmission line
generic structure shown in Figure 2 have the following
advantages, it can be easily integrated with the active and 2 | E XI S T I N G A P P R O AC H
passive components, it does not require any ground via, and
it has low dispersion and radiation loss. The above parame- In the past few years, different kinds of rectenna have been
ters are perfectly suitable for the design of the rectenna. developed for RF energy harvesting applications. Mahima
The CPW fed slot antenna has two advantages such as et al.12 reported a broadband bend triangular omnidirectional
wide bandwidth and simple impedance matching network.10 antenna at the frequency band of 850 MHz to 1.94 GHz for
The CPW fed rectifier circuit is designed using polytetra- RF energy harvesting applications. A maximum conversion
fluoroethylene (PTFE) dielectric material which has the efficiency of 60% and 17% were obtained for a load of
maximum power transfer capability with a low dielectric 500 Ω at 980 and 1800 MHz. A dual band microstrip
constant(εr = 2.1), very low loss tangent (0.0018 at antenna with gain enhancement had been investigated.13 A
10 GHz), negligible water absorption and a high temperature high efficiency rectenna was introduced14 at 2.45 GHz with
resistance(the melting point is about 327 C), PTFE dielectric the peak gain of 8.6 dBi. The antenna was designed to
material have suitable technical advantages like it provides directly match with rectifier circuit at 2.45 GHz, which pro-
isolation between the antenna and the metallic structure, it vides the maximum conversion efficiency of 83% with a
reduces the current cancelation in the antenna, it reduces the load resistance of 1400 Ω.
power loss. Thus, PTFE is the suitable dielectric material Dukju Ahn et al.15 presented millimeter sized wireless
which improves the performance of the rectenna. power transmission for biomedical implants. This WPT system
The antenna, rectifier and integrated rectenna are fabri- was based on the principle of inductive coupling between the
cated and tested. The performance of the rectenna is verified two coils; it achieves power transfer efficiency of 0.56% and
by both simulation and measured results. From the results, it power delivered to the load of about 224 μW at 200 MHz with
is observed that the proposed rectenna may be used for 12 mm separation between the two coils in the tissue environ-
powering the low power devices such as sensors, implant- ment. A microstrip antenna array based wireless power trans-
able biomedical devices, and internet of things (IoT) mission system was introduced16 for the ISM band of 5.8 GHz.
applications.11 Joseph et al.17 developed a broad-band rectenna array for recy-
This article is organized as follows: Section 2 introduces cling ambient microwave energy. Besides, the wide band
the existing approaches used for designing the rectenna. rectenna,18 the triple band differential rectenna provides the
Section 3 briefly discusses the design of the broadband maximum conversion efficiency of 86%, when 11 dBm micro-
wave power was received at 433 MHz with a load resistive of
5 Ω,19 and the multiband rectenna20 were studied for harvesting
the RF energy applications.
Recently many researchers have focused on the design of
an efficient antenna for wireless energy harvesting application.
Sandhya et al.21 presented a miniature implantable antenna for
rectenna application. Many CPW fed antenna design for differ-
ent frequency band have been investigated.22–27 An analytical
model of a Schottky diode has been investigated.28 From the
FIGURE 2 Generic structure of CPW transmission line existing research, the ISM frequency band of 5.8 GHz has been
SARANYA AND KESAVAMURTHY 3 of 12
selected, because the frequency band is less crowded and the The proposed CPW fed slot antenna length (L1) is
size of the rectenna will be reduced, when compared with approximately one-guide wavelength (λg) is determined by
2.45 GHz. the following Equations (1) and (2),
C=f
λg ¼ pffiffiffiffiffiffiffi ð1Þ
3 | AN TEN N A DE SIGN εeff
where, εeff is the effective constant and f is the resonant
3.1 | Antenna configuration frequency. The effective dielectric constant is equal to the
The proposed CPW fed broadband slot antenna is shown in average dielectric constant of the substrate and the air.
Figure 3A. The CPW structure without the use of any extra εr + εair
balun is used to match the antenna and the rectifier to εeff ¼ ð2Þ
2
improve the power conversion efficiency. The advantage of
0:5 ≤ w=h ≤ 2 ð3Þ
using the coplanar waveguide is that the diode and the pas-
sive components are integrated with the antenna with less s
≤4 ð4Þ
complexity, which is preferable for rectifying circuit design. s + 2w
The characteristic impedance of the CPW transmission line The width of the CPW feed line and gap is obtained by
is 50 Ω. The CPW fed broadband rectenna is fabricated on a Equations (3) and (4). The optimized dimensions of the
1.5-mm–thick(h) PTFE dielectric material with the dielectric antenna are shown in Table 1. The optimal antenna parame-
constant of 2.1 and loss tangent δ = 0.0018.The proposed ters including the |S11| and the gain are obtained by using
antenna has a single layer metallic structure on one side of Keysight EmPro 3D electromagnetic simulator.
the substrate whereas, the other side is without any metalli- The simulated surface current distribution of the proposed
zation. The CPW slot antenna consists of CPW feed line CPW fed slot antenna at the different frequencies 5.1, 5.8, and
separated from the ground plane with two narrow slot lines. 6.1 GHz are depicted in Figure 4. From the figure, it is clear
The two symmetrical V shaped resonating slots are intro- that the surface current distributions at various frequencies are
duced on the CPW plane, whose length have been chosen different. At 5.1 GHz, the surface current distribution is along
according to the longest working wavelength of the desired the CPW rectangular ground plane. Similarly, at 5.8 GHz fre-
frequency band and it have been fed by the center conductor quency band, the two V-shaped slot and feed line have rich
of CPW. The frequency of the operation depends on the current distributions. At 6.1 GHz, the surface current is mainly
length of the slot (L1). The input impedance of the antenna is distributed on the feed line. This indicates the slot length and
tuned by the stub length (d) and the dimensions of the copla- feed line controls the resonant frequency of the antenna.
nar waveguide.29,30 In order to increase the gain and direc-
tivity of the proposed antenna, maximum beam is directed in
3.2 | Parametric variation
one direction, a reflector plane is placed at the back side of
the antenna at the distance of D = 0.48 λ0 as shown in In the parametric variation analysis, five critical parameters
Figure 3B.The microwave power is received by the slot with effect on the performance are given and discussed. The
antenna and transmitted to the rectifying circuit. other parameters such as the slot width (Ws), feed length
FIGURE 3 Configuration of proposed CPW fed slot antenna: A, top view. B, Side view
4 of 12 SARANYA AND KESAVAMURTHY
TABLE 1 Optimized values of parameters used in designing of proposed antenna (in mm)
Parameters Wt Lt Wf Lf G Ws Ls θ D d
Values (mm) 58 38 4.1 10 1.2 0.4 20 45 10.4 3.5
(Lf), gap G, and reflecting plane distance D are kept as same 3.2.2 | Effect of varying length of the patch (Lt)
as mentioned above. The variation in the length of rectangular patch (Lt) influ-
ences the loss in the antenna. Different values of the length
3.2.1 | Effect of varying length of the slot (Ls) of patch are taken as 24, 26, 28, 30, and 32 mm, the results
The effect of varying length of the slot (Ls) is shown in show slight deviation in resonant frequency, but it has strong
Figure 5 which illustrate the influences of the slot length (Ls) influences in reflection coefficient (S11). Figure 7 shows that
for the resonant frequency. Deviation in the resonant fre- by changing the length of the patch, the reflection coefficient
quency and reflection coefficient (S11) is observed by vary- (S11), bandwidth and resonant frequency changes. It is also
ing the length of slot from 16 to 24 mm in steps of 2 mm. observed that the patch length at 28 mm gives the reflection
As the slot length decreases, the resonant frequency shifted coefficient of −23 dB at 5.8 GHz ISM band. The compari-
from 5.8 to 6.3 GHz. When the slot length increases, the res- son of frequency versus VSWR for different patch length
onant frequency shifted from 5.8 to 5.2 GHz. The frequen- (Lt) is shown in Figure 8.
cies versus voltage standing wave ratio (VSWR)
performance for different slot length (Ls) are shown in 3.2.3 | Effect of varying width of the patch (Wt)
Figure 6. It can be concluded that for the value of optimum
Effect of varying width of the patch (Wt) is shown in
slot length Ls = 20 mm, the VSWR is 1.153 is achieved at
Figure 9. It can be seen that, when Wt increases from 58 to
the resonant frequency of 5.8 GHz.
64 mm, the value of reflection coefficient increases. As Wt
decreases from 58 to 54 mm, the resonant frequency slightly
FIGURE 5 Comparison of simulated S11 (dB) versus frequency for FIGURE 6 Frequency versus VSWR performance for different slot
different value of slot length (Ls) length (Ls)
SARANYA AND KESAVAMURTHY 5 of 12
FIGURE 7 Comparison of simulated S11 (dB) versus frequency for FIGURE 9 Comparison of simulated S11 (dB) versus frequency for
different value of patch length (Lt) different value of patch width (Wt)
References Structure Dimensions mm3 Substrate Frequency |S11| in dB Bandwidth (%) Gain (dBi)
6
Chen and Chiu CPW fed bended monopole 35 × 35 × 1.6 Fr4 and 4.4 3.6,6.8,9 GHz <−20 dB 3.1 to 9 GHz 2.5 dBi
antenna
Bing et al.8 CPW fed slot antenna 66.4× 54 × 1.4 Fr4 and 4.4 2.45 GHz −30 dB 33.3% 3 dBi
Lin-Tao et al.9 CPW-bed asymmetrical slot 35 × 35 × 1.6 Fr4 and 4.4 2.45 GHz −20 dB 118.7% 2.95 dBi
antenna
Li Zhang et al.10 Bent triangular antenna 94 × 82 × 1.6 Fr4 and 4.4 980 MHz and <−10 dB 0.89-1.9 GHz 7 dBi
1800 MHz
Palandoken11 Microstrip antenna 50 × 50 × 0.8 Fr4 and 4.4 1.95,2.45GHz 19 dB,35 dB - 8.3,7.8 dBi
Zhanf et al. 20
CPW fed monopole antenna 70 × 70 × 0.8 Fr4 and 4.4 2.45,5.51GHz −20 dB 41.89%, 90.91% 7.1 dBi
Proposed work CPW fed slot antenna 60 × 60 × 1.6 PTFE and 2.1 5.8 GHz −23.43 dB 20.68 8.56 dBi
H-plane 2D radiation pattern. The E plane is the plane that con- angle for the antenna. The simulated and measured antenna
tains vector of electric field while H-plane is the plane that con- gain versus frequency is plotted in Figure 18B. The mea-
tains the magnetic field. The two-dimension radiation sured peak gain is 8.66 dBi at the resonant frequency of
characteristics of the E plane and H-plane are simulated at dif- 5.8 GHz, while the simulated peak gain is 10.56 dBi at
ferent frequencies such as 5.3, 5.8, and 6.1 GHz are shown in 5.8 GHz. The measured gain varies between 6.5 and 10.44
Figure 17. In E plane, the value of Φ is 0 and 90 while H dBi in the bandwidth of 5.2-6.2 GHz. From the gain plot, it
plane the value of θ is 0 and 90 . is clear that the measured gain slightly differs from the simu-
The simulated far field 3D radiation pattern of the pro- lated value this may be due to the properties of adhesive
posed antenna at 5.8 GHz is shown in Figure 18A. The radi- copper tape. By placing the reflecting plane beyond the pro-
ation pattern shows the directivity over the phi and theta posed antenna at the distance of D the measured gain of the
antenna can be improved.
4 | R E C T I F I E R DE S IG N
FIGURE 17 Radiation pattern of the proposed antenna at: A, f = 5.8 GHz; B, f = 5.3 GHz; C, f = 6.1 GHz
the CPW ground line and feed line to act as the dc-pass fil- circuit is directly connected to the output terminal of the pro-
ter, which blocks any unrectified microwave power that posed antenna without any extra balun.
enters the load. The series capacitor C1 is used to prevent the Keysight ADS simulation tool is used for designing the
direct current path from being short-circuited, because the rectifying circuits. The simulated input impedance of the
feed line of the CPW antenna is directly connected with the Schottky diode at 5.8 GHz is 47.68-j7.975 Ω when the input
CPW ground plane. The load resistance (Rload) is connected power is −6 dBm. Hence, an input impedance matching net-
to the output of rectifier to collect the DC power. Diode and work is designed to match the input impedance of the
capacitors are directly attached with CPW structure without antenna to the diode input impedance. The input impedance
any ground vias, this reduces the parasitic effect and sim- matching network is realized by CPW Transformer. The per-
plifies the fabrication process. The design of rectifying fect impedance matching can be realized by adjusting the
SARANYA AND KESAVAMURTHY 9 of 12
V L2 1
ηð%Þ ¼ × × 100% ð5Þ
RLoad Pin
Parameters W1 L1 W2 L2 G C1 C2 C3 Rload
Value 18 mm 24 mm 3 mm 10 mm 1.2 mm 10 pF 47 pF 47 pF 1 kΩ
References Rectifier structure Maximum conversion efficiency (%) Output DC voltage (V)
Arrawatia et al.12 CPS load single port rectifier 83% @ −5 dBm 1V
Sun et al.14 Microstrip based voltage doubler circuit 46.9% –
Yang et al.16 Single port rectifier 86% @ 11 dBm 5V
Hagerty et al.17 Single shunt diode rectifier 41% –
Huang et al.18 Single voltage doubler circuit 57% @ 9 dBm 100 mV
Okba et al.19 Differential port rectifier circuit 68% @ −2 dBm 25 μV
Proposed work CPW fed voltage doubler rectifier circuit 73.4% @ −6 dBm 540 mV
SARANYA AND KESAVAMURTHY 11 of 12
5 | C O NC L U S IO N
OR CID
N. Saranya https://orcid.org/0000-0003-1523-8030
FIGURE 24 Simulated and measured conversion efficiency versus input
power levels
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