E-MOSFET

Last Updated : 27 May, 2024

Enhancement MOSFET which is commonly called as E-MOSFET

is a type of field effect transistor which is used mainly in voltage-
controlled devices. It is a unipolar device, i.e. device in which
conduction of current takes place either by electrons or holes. It is
a three-terminal device which is mainly used as amplifier or in
switching devices.

This type of transistor can be used both in analog and digital

devices. These transistors are more popular than Bipolar junction
transistors due to less power dissipation and negligible leakage
current. These are smaller in size and hence find its application in
integrated circuits (ICs).

Table of Content
Enhancement Type MOSFET
Symbol
Types of E-MOSFET
N-Channel E-MOSFET
P-Channel E-MOSFET
Working
Characteristics
Difference Between Depletion MOSFET and Enhancement
MOSFET
Features of
Advantages
Disadvantages
Applications
What is Enhancement Type MOSFET?
The full form of E-MOSFET is Enhancement- Metal Oxide
Semiconductor Field Effect Transistor. It is called as enhancement
MOSFET because for a creating a conduction channel between
drain and source terminal, a positive voltage is required at the
gate terminal. Metal is for the metallic contacts that are used to
connect drain(D), gate(G) and source(S) terminals.

Oxide is for the silicon dioxide (SiO2) layer which is used as an

insulating layer between substrate and gate terminal.
Semiconductor is for the structure which is used in the
construction of this transistor. To sum up, the name E-MOSFET is
given to this type of device.
 E-MOSFET

Enhancement MOSFET Symbol

The Symbol for the N-channel enhancement MOSFET is given
below. In the Symbol we can see that the dotted lines which is
connected between the Substrate and source terminals shows the
enhancement mode type. In the E MOSFET the conductivity is
enhances by using increase oxide layer which will add the charge
carries in the channel which is known as Inversion layer.

Circuit-symbol-of-n-channel-E-MOSFET

Types of E-MOSFET
Based on the type of charge carriers (electrons or holes), E-
MOSFET can be classified into two types:
 N-Channel E-MOSFET
P-Channel E-MOSFET

N-Channel E-MOSFET
This type of MOSFET is called as n-channel MOSFET because
the flow of current takes place by conduction of negative charge
carriers, i.e., electrons.

Construction of N-Channel E-MOSFET

A n-channel E-MOSFET consists mainly of three terminals:

Source(S), Gate(G) and Drain(D). A substrate (SS) is made up of
a p-type semiconductor and is internally connected with source
terminal or sometimes brought out in a form fourth terminal. The
other three terminals, i.e., drain, gate and source as connected to
each other by n-doped region through metallic contacts. The
figure given below shows the construction of N-Channel E-
MOSFET:

Construction-of-N-Channel-E-MOSFET

Circuit symbol of N-Channel E-MOSFET

Circuit symbol of N-channel E-MOSFET is shown below:

 Circuit-symbol-of-n-channel-E-MOSFET

P-Channel E-MOSFET
This type of MOSFET is called as p-channel MOSFET because
the flow of current takes place by conduction of positive charge
carriers, i.e., holes.

Construction of P-Channel E-MOSFET

A p-channel E-MOSFET consists mainly of three terminals:

Source(S), Gate(G) and Drain(D). A substrate (SS) is made up of
a n-type semiconductor and is internally connected with source
terminal or sometimes brought out in a form fourth terminal. The
other three terminals, i.e., drain, gate and source as connected to
each other by p-doped region through metallic contacts. The
figure given below shows the construction of p-channel E-
MOSFET:
 Construction-of-p-channel-E-MOSFET

Circuit symbol of P-Channel E-MOSFET

Circuit symbol of p-channel E-MOSFET is shown below:

Circuit-symbol of P-channel E-MOSFET

Working of E-MOSFET
The working principle of E-MOSFET is that when a positive
voltage is applied on the gate terminal, then a conduction channel
appears between source and drain terminal.

In n-channel E-MOSFET when the value of gate-to-source voltage

is zero, then no drain current flows in a transistor. When the value
of gate-to-source voltage is positive then the holes in p-doped
region would be repelled by the positive terminal voltage which is
applied at gate terminal.

By this a depletion region is created near silicon dioxide layer.

But, minority charge carriers of substrate, i.e., electrons would be
attracted to the gate terminal near the insulating layer of silicon
dioxide. When there is increase in positive voltage from gate-to-
source terminal, the gathering of electrons near insulating layer of
silicon dioxide increases.

This results in formation of induced n-channel between n-doped

region of drain to source terminal. This induced channel connects
drain and source terminals internally and current starts flowing
through it. The minimum voltage at which current starts flowing
through it is called as threshold voltage (VT).

The working of p-channel E-MOSFET is exactly opposite to that of

p-channel E-MOSFET, i.e., all voltage polarities are reversed and
thus the flow of current is also reversed.

Working-of-E-MOSFET

Characteristics of E-MOSFET
There are two types of characteristics of E-MOSFET- drain
characteristics and transfer characteristics. Both type of E-
MOSFET, i.e., n-channel E-MOSFET and p-channel E-MOSFET
have these characteristics, and are discussed below:
Characteristics of N-Channel E-MOSFET

Characteristics of n-channel E-MOSFET refers to the curves

which relate the current and voltage of device with each other.
There are mainly two types of characteristics in n-channel E-
MOSFET:

Drain Characteristics: These curves provide the relationship

between drain current (ID) and drain-to-source voltage (VDS).
When different values of drain current and drain-to-source
voltage are plotted on graph, it gives respective values of gate-
to-source voltage (VGS). These characteristics are also called
as V-I characteristics of a curve.

From the graph shown below, it is observed that when the positive
value of VGS is increased, the current ID will also increase. This
graph consists of two regions: non-saturated region and saturated
region. The non-saturated region of the curve is also called as
ohmic region, in this region when drain current is increased then
subsequently the value of drain-to-source voltage also increases.

Ohmic region lasts till when the value of drain-to-source voltage

reaches a threshold value called as threshold voltage (VTN). After
this voltage saturation of n-channel E-MOSFET takes place.
Hence, the region of curve after threshold voltage is achieved is
called as saturated region.
 Drain-Characteristics-of-n-channel-E-MOSFET

Transfer characteristics: These curves provide the

relationship between drain current (ID) and gate-to-source
voltage (VGS). When different values of drain current and gate-
to-source voltage are plotted on X- axis and Y-axis
respectively, it provides different values of drain-to-source
voltage (VDS). These curves are also called as
transconductance curves.

From the transfer characteristics of n-channel E-MOSFET shown

below it is observed that when the value of gate-to-source voltage
is below the threshold voltage (VTN) then no drain current flows.
When gate-to-source voltage is increased, and it reaches to
threshold voltage then drain current (ID) starts flowing.
 TRANSFER-Characteristics-of-n-channel-E-MOSFET

Characteristics of P-Channel E-MOSFET

Characteristics of p-channel E-MOSFET refers to the curves

which relate the current and voltage of device with each other.
There are mainly two types of characteristics in p-channel E-
MOSFET:

Drain Characteristics: These curves provide the relationship

between drain current (ID) and drain-to-source voltage (VDS).
When different values of drain current and drain-to-source
voltage are plotted on graph, it gives respective values of gate-
to-source voltage (VGS).

From the graph shown below, it is observed that when the

negative value of VGS is increased, the current ID will also
increase. The graph of p-channel E-MOSFET consists of two
regions: non-saturated region and saturated region. The non-
saturated region of the curve is also called as ohmic region, in this
region when drain current is increased then subsequently the
value of drain-to-source voltage also increases.

In non-saturated or ohmic region Enhancement MOSFET works

as amplifiers. Ohmic region lasts till when the value of drain-to-
source voltage reaches a threshold value called as threshold
voltage (VTP). After this voltage p-channel E-MOSFET works
under saturated region. Hence, the region of curve after threshold
voltage is achieved is called as saturated region. In this region
Enhancement-MOSFET works as a voltage-controlled resistor.
 Drain-Characteristics-of-p-channel-E-MOSFET

Transfer characteristics: These curves provide the

relationship between drain current (ID) and gate-to-source
voltage (VGS). When different values of drain current and gate-
to-source voltage are plotted on X- axis and Y-axis
respectively, it provides different values of drain-to-source
voltage (VDS).

TRANSFER-Characteristics-of-p-channel-E-MOSFET

The transfer characteristics of p-channel of Enhancement type

MOSFET is the mirror image of transfer characteristics of n-
channel E-MOSFET. In this curve the value of drain current
increases when the value of gate-to-source voltage decreases.

Voltage Divider Bias

The Voltage Divider bias for N-channel enhancement MOSFET is
given below. This configuration is similar to the divider circuit
utilized with BJT transistors. Specifically the N Channel MOSFET
requires a gate voltage higher than its source just like NPN BJT
uses base voltage higher than its emitter.

In the given circuit the resistors R1 and R2 are used construct the
divider circuit which sets the gate voltage. VGs is equal to when
the source of the E-MOSFET is directly linked to ground. The
Voltage Across the Resistor R2 must be greater than VGS(th) for
proper operation.

The Characteristic equation for the E-MOSFET can be given as

K= ID
(VGS −V GS(th))2

Drain Feedback Bias

The given Figure shows the Drain Feedback Bias. This biasing
technique operates by selecting the "on" operating point on the
characteristic curve. In this the drain current is set up by
appropriately choosing the power supply and drain resistor.

Using KVL in the circuit we have

VDD = VRD + VRG + VGS

VDD = ID RD + IG RG + VGS

the gate current will be zero, so we have

 VDD = ID RD + VGS

also,

VDS = VGS

So,

VGS = VDS = VDD − ID RD

Difference Between Depletion MOSFET and

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Enhancement MOSFET
Difference between D-MOSFET (Depletion MOSFET) and E-
MOSFET (Enhancement MOSFET) is given below:

Parameter Depletion Enhancement

MOSFET MOSFET

Channel is not
Channel is
Presence of present. It is induced
present., either of
channel during the time of
n-type or p-type.
operation.

Insulating layer of Insulating layer of

silicon dioxide is silicon dioxide is
Insulating layer
presence between present between
gate and channel. gate and substrate.

It can work both in

depletion and It works only in
Working
enhancement enhancement mode.
mode.

It is normally called It is normally called

Type of transistor
 as ON transistor. as OFF transistor.

Flow of current
Flow of current does
takes place
not take place
between source
Effect of gate between source and
and drain terminal
voltage drain terminal when
when no voltage is
no voltage is applied
applied at gate
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Features of E-MOSFET
There are various features of E-MOSFET which makes it different
from other types of transistors. Some of such features are
discussed below:

In enhancement MOSFET, channel is not present permanently,

but it is induced during the time of working.
A silicon dioxide layer which acts as an insulator is present
between gate and substrate which isolates gate from the main
structure.
Due to the presence of metal-oxide (SiO2) layer input
capacitance of enhancement MOSFET is high.
It is a voltage-controlled device.
E-MOSFET can be operated at very high frequencies (up to
few mega-ohms).

Advantages of E-MOSFET
Enhancement - MOSFET offers many advantages, some of them
are listed below:
 As E-MOSFET is a voltage-controlled transistor, so it offers a
good control on the conductivity of current across source and
drain terminal.
It could be rapidly turned from off-state to on-state and vice-
versa, hence could be used in high-speed switching devices.
E-MOSFET are small in size, hence it helps in converting a
gigantic and bulky device to compact and light-weighted
devices.
E-MOSFET have high reliability as these types of transistors
have silicon dioxide layer as an insulating layer which ensure
the flow of current through the intended channels.
These transistors draw very less current from input source and
also have a minimal signal loss due to the high input
impedance of E-MOSFET.

Disadvantages of E-MOSFET
There are some limitations of using Enhancement - MOSFET,
some of them are listed below:

E-MOSFET have a complex biasing in comparison to other

types of transistors.
E-MOSFET are temperature-sensitive, i.e., change in
temperature will affect the working of the transistor.
These types of transistors are generally costlier than other
types of transistors, hence increase the cost of device in which
it is used.
E-MOSFET cannot perform efficiently at high frequencies.
The properties of E-MOSFET gets altered if the type of
semiconductor material is altered.

Applications of E-MOSFET
There are various applications of enhancement MOSFET, some of
them are discussed below:
 It is used as an amplifier.
These types of transistors also find its application in switching
devices as it can rapidly be turned on or off when voltage is
varied.
It can also be used for storing memory and hence, finds its
application in electronic memory or storage devices.
E-MOSFETs are used in inverter circuits.
It is also used in power electronic integrated circuits (IC's).

Conclusion
Thus, E-MOSFET is a type of transistor that consists mainly of
three terminals. It is voltage-controlled semiconductor device. In
E-MOSFET as no current flows from drain to source when gate is
not supplied with any voltage. So, E-MOSFET is generally called
as OFF MOSFET as no current flows from gate to source when
gate is applied with zero voltage. It could be used both in analog
and digital devices as it offers high input impedance with low
power consumption.

E-MOSFET - FAQs

What is the full form of E-MOSFET?

The full form of E-MOSFET is Enhancement -Metal Oxide

Semiconductor Field Effect Transistor.

What is the use of silicon dioxide layer in E-MOSFET?

Silicon dioxide is used in E-MOSFET as an insulating layer

between substrate and gate terminal.