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Assignment3 - Question Paper EE311

The document outlines an assignment for EE 311: Introduction to Semiconductor Devices, due on March 7, 2025. It includes five questions focused on determining various properties of semiconductors, such as effective density of states, intrinsic carrier concentration, and the effects of doping on electron and hole densities. The assignment requires calculations and assumptions related to temperature and doping levels for Silicon and other semiconductors.

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2 views1 page

Assignment3 - Question Paper EE311

The document outlines an assignment for EE 311: Introduction to Semiconductor Devices, due on March 7, 2025. It includes five questions focused on determining various properties of semiconductors, such as effective density of states, intrinsic carrier concentration, and the effects of doping on electron and hole densities. The assignment requires calculations and assumptions related to temperature and doping levels for Silicon and other semiconductors.

Uploaded by

rajrom007
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
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Download as PDF, TXT or read online on Scribd
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EE 311: Introduction to Semiconductor Devices 2024-25 2nd Semester

Assignment 3 (Due at 6 pm on 7th March 2025)

Q1) Determine conduction and valence band effective density of states and intrinsic carrier
concentration for a semiconductor whose properties are given below. Assume room temperature
and mo to be the rest mass of a free electron.
𝑚!∗#$ = 0.1𝑚% , 𝑚&∗#$ = 0.5𝑚% , 𝐸' = 1.4 𝑒𝑉.

Q2.a) Determine 𝐸( − 𝐸) vs T for Silicon with a constant electron density of 1016 cm-3. State all
the assumptions made (if any).
Q2.b) Determine 𝐸( − 𝐸) vs T for Silicon with a constant donor density of 1016 cm-3. State all the
assumptions made (if any).

Q3) A semiconductor with an effective conduction band density of states 1019 cm-3 is doped with
a donor whose energy level measured from conduction band edge is 10 meV. Will more than 90%
of donors be ionized at room temperature if the semiconductor is doped with 1017 cm-3 atoms? If
yes, then determine the temperature at which only 50% of the donors are ionized and neutralization
becomes significant.

Q4) For an N-type Silicon doped with a doping of 1015 cm-3, determine the temperature range over
which electron density can be considered equal to the doping level. You can use the following
parameters for Si: 𝑚!∗#$ = 1.08𝑚% , 𝑚&∗#$ = 0.56𝑚% , 𝐸* − 𝐸+ = 0.04 𝑒𝑉, 𝐸' = 1.12𝑒𝑉.

Q5) A piece of Silicon is doped with 1016 cm-3 donor atoms, and 1017 cm-3 acceptor atoms.
Determine the electron and hole density in the semiconductor at equilibrium at room temperature.
Determine the position of Fermi energy at T = 1K. Assume 𝐸* − 𝐸+ = 𝐸, − 𝐸- = 0.04 𝑒𝑉, 𝐸' =
1.12 𝑒𝑉, 𝑚!∗#$ = 1.08𝑚% , 𝑚&∗#$ = 0.56𝑚% .

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