Verma 2020
Verma 2020
In this work, the authors fabricated and characterized efficient inverted organic solar cells by modifying them with a
highly transparent sol–gel-derived zinc oxide (ZnO) film as an electron transport layer and optimized molybdenum
trioxide (MoO3) as a hole transport layer with a very low-bandgap polymer, poly[N-900-hepta-decanyl-2,7-carbazole-alt-
5,5-(40,70-di-2-thienyl-20,10,30-benzothiadiazole)] (PCDTBT), in bulk heterojunction (BHJ) composites with the fullerene
derivative [6,6]-phenyl-C70-butyric acid methyl ester (PC70BM) BHJ in various solvents. Variations in the sol concentration,
thickness, surface and optical characteristics of inverted organic solar cell glass/indium tin oxide/zinc oxide/PCDTBT:
PC70BM/molybdenum trioxide/silver (Ag) structures were investigated and analyzed. The thickness of zinc oxide increased
as the sol concentration increased from 10 to 100 nm. With the modification of the PCDTBT:PC70BM solvent, the device
efficiency improved from 4.22 to 7.43%, which was accompanied by an improvement in the open-circuit voltage (Voc)
from 0.87 to 1.03 V and enhancement of the short-circuit current density (Jsc) from 9.1 to 13.5 mA/cm2.
1
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Nanomaterials and Energy Effect of ZnO ETL and MoO3 HTL with
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solar cells
Verma, Shukla and Tiwari
nanoparticle (NP) research regarding the synthesis of metal oxide studies showing that a higher efficiency is achieved with an active
particles, allowing one to predict precisely the composition, layer thickness of up to 200 nm. Thus, the authors optimized the
structure, size, form and optoelectronic properties. Metal-oxide optimum 80 nm thickness of PCDTBT:PC70BM photoactive
semiconductor nanocrystals based on sol–gel synthesis routes, layers.39 First, the authors observed that the efficiency of inverted-
such as zinc oxide (ZnO), titanium dioxide and s-molybdenum structure OSCs was enhanced with a highly transparent sol–gel-
trioxide, have attracted intensive interest during the last few years, derived zinc oxide ETL by varying and controlling the
because their outstanding optical and electrical properties qualify concentration of the sol. In addition, replacing the commonly
them for multiple optoelectronic applications, particularly for thin- used Pedot:PSS with zinc oxide helps increase the fill factor
film solar cells. Efficient solar cells with MoO3 interface layers (FF). Second, molybdenum trioxide improved device stability
were reported to have superior environmental stability, paving the without encapsulated PCDTBT:PC70BM such that solar cells
way for the fabrication of more efficient and stable organic BHJ remain intact, even after being kept in the air for several days,
solar cells.33 In another work,34 structures with mainly ITO/ while cells fabricated with other materials such as Pedot:PSS
indium (In)-doped zinc oxide/poly[N-900-hepta-decanyl-2,7- showed rapid degradation. In this work, the authors fabricated
carbazole-alt-5,5-(40,70-di-2-thienyl-20,10,30-benzothiadiazole)] efficient inverted BHJ OSCs using a sol–gel-derived zinc oxide
(PCDTBT):[6,6]-phenyl-C71-butyric acid methyl ester (PC71BM)/ electron-selective layer and a molybdenum trioxide-selective
molybdenum trioxide/aluminum were successfully fabricated. The layer. Thermally evaporated molybdenum trioxide thin films with
inverted OSCs with 6.74% In-doped ZnO exhibited a maximum a thickness of 10 nm were deposited as cathode interfacial layers.
PCE of 5.58%, which is the best efficiency reported so far for
these types of solar cells. The device performance was optimized 2. Device structures
by varying the indium doping concentration. Thus, the authors In this work, inverted device structures, glass/ITO/zinc oxide/
achieved the PCE by incorporating indium into the zinc oxide PCDTBT:PCBM/silver, were stacked from bottom to top, as
films.34 Two years later, the stability of PCDTBT:PC71BM-based shown in Figure 1(a). The energy level diagram of the inverted
BHJ OSCs for over the course of a year was investigated, and it device structure is presented in Figure 1(b).
was concluded that in the most stable devices, the observed
lifetime is limited by the thermally induced stress between the 3. Experimental methods and device
device layers, as well as material degradation as a result of edge fabrication
ingress of water or moisture through the encapsulation.35 The The ITO substrate was prepared through the following procedure:
purpose of the present work is to enhance the efficiency and ITO-coated glass substrates were prepared in 12.5 mm2 sizes by
stability of BHJ inverted OSC devices with PCDTBT:[6,6]- removing a 2 mm ITO glass (purchased from Techinstro) pattern
phenyl-C70-butyric acid methyl ester (PC70BM) active material for the contact using ultraviolet (UV) treatment for 10 min. The
employing zinc oxide as the ETL and molybdenum trioxide as the patterned ITO was cleaned by ultrasonication with soap water,
HTL by optimization and modification. The use of zinc oxide and deionized water, acetone and isopropyl alcohol for 10 min each.
molybdenum trioxide provides both stability and transparent The completely cleaned ITO substrates were dried on a hot plate
layers for the devices. More specifically, the primary aim of the and subsequently treated by using a plasma asher for 10 min to
fabrication efforts of interest in this work is to fabricate accurately remove oxide contamination. The plasma-treated ITO substrates
the device properties of BHJ solar cells and hence optimize the were directly transferred into a spin coater for pre-prepared
efficiency of BHJ OSC devices. First, the physics involved in the sol–gel zinc oxide solution deposition. Sol–gel zinc oxide
functioning of BHJ PVs was investigated. Then, fabrication and solutions were synthesized and prepared as discussed in the
characterization of devices of inverted BHJ OSCs were carried literature.40–42 For preparing zinc oxide thin films, the authors
out. Afterward, results of measurements of the thickness, surface used zinc acetate dihydrate (Zn(CH3COO)2·2H2O; 99.9%,
topography and optical and electrical characteristics of PCDTBT: Sigma-Aldrich). Zinc acetate dihydrate was dissolved in
PC70BM BHJ inverted OSCs are presented. Finally, the work 2-methoxyethanol anhydrous (C3H8O2; 99.8%, Merck) to prepare
ends with conclusions. zinc oxide sol, and ethanolamine (MEA) (NH2CH2CH2OH;
99.9%, Sigma-Aldrich) was added dropwise to obtain
Furthermore, ETLs (e.g. titanium dioxide or zinc oxide) also homogeneous and transparent sols. Consequently, the prepared
function to reorganize the light intensity inside the BHJ active sols with varying concentrations of precursors were spin-coated
layer, thus enhancing the harvesting of light energy.36–38 The on pre-patterned ITO glass substrates.
authors observed that the use of zinc oxide as the ETL improved
the PCE and significantly increased both the device lifetime and BHJ OSCs with inverted structures were fabricated on the ITO
stability. The authors carefully chose molybdenum trioxide for in- substrates as discussed earlier. An active layer with a thickness of
depth studies because of its good transmittance as well as wide around 80–90 nm was deposited by spin-coating a solution of
bandgap and easy fabrication using thermal evaporation PCDTBT:PC70BM (1:4) dissolved in chlorobenzene (CB) and
techniques. BHJ solar cells fabricated with PCDTBT:PC70BM as dichlorobenzene (DCB) on top of the pre-spin-coated ITO/zinc
the photoactive layer, zinc oxide as the ETL and molybdenum oxide samples. Just after the spin-coating of the active layer
trioxide as the HTL show better performance. There are various solution, the samples were transferred to hot plates for annealing
2
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Nanomaterials and Energy Effect of ZnO ETL and MoO3 HTL with
PCDTBT:PC70BM-based BHJ organic
solar cells
Verma, Shukla and Tiwari
–2.6 eV
+
–3.4 eV
– V
Ag –3.8 eV
–4.3 eV
PCDTBT MoO3
MoO3 HTL
PCDTBT:PC70BM –4.2 eV
–4.8 eV
ZnO ZnO PCBM Ag
ITO ITO
Glass substrate –5.3 eV
–5.6 eV
–6.2 eV
–7.7 eV
(a) (b)
Figure 1. (a) Device structure of PCDTBT:PCBM inverted BHJ OSCs; (b) energy level diagram of the proposed inverted device structure
at 70°C for 10 min and by covering the sample using a petri dish, 4. Results and discussion
so that the solvent was slowly evaporated. After the sample had It is possible that the improvement in the device performance is due
been completely dried, it was ready for deposition of a to the proper thickness and better surface quality of the film, which
molybdenum trioxide HTL with an optimal thickness of 10 nm. provides better wettability and adhesion with the photoactive layer.
Subsequently, a silver cathode layer with a thickness of 100 nm Therefore, thickness optimization, surface roughness, structural
was deposited on top of molybdenum trioxide by thermal morphology, absorbance and semicrystallinity analysis were carried
evaporation in a vacuum system with a pressure of 10−6 mbar. All out to investigate the surface quality of each film mainly composed
these fabrication processes were carried in a glove box at Organic of zinc oxide and PCDTBT:PC70BM layers.
Electronics Laboratory, Indian Institute of Technology, Bombay,
under an Indian Nanoelectronics User Program-funded program. The thickness was optimized and confirmed by using a Dektak
The typical active cell area of the devices fabricated in this work profilometer. Atomic force microscopy (AFM) measurements of the
was taken to be around 0.045 cm2 by using a metal shadow mask zinc oxide and PCDTBT:PC70BM thin films were carried out, and
during the evaporation of the cathode (silver). The authors used the results are shown in Figures 2(a)–2(c) and 3(a)–3(c), respectively.
epoxy to stick and UV treatment for curing for 10 min. The The zinc oxide thin films were made up of a large number of peaks
voltage–current (V–I) characteristics were taken using a Keithley that grew in size as the film thickness was increased. In XRD peaks
2400 source meter under an illumination of simulated AM1.5 the contact area between PCDTBT:PC70BM and molybdenum
sunlight with an intensity of 100 mW/cm2 provided by an LED trioxide may generate and allow for efficient hole collection. AFM
solar simulator (LSH-7320, class ABA type), whose intensity was images of the surface of the studied films confirm a remarkable
calibrated by using a standard single-crystal silicon (Si) solar cell. change in the morphology of the film. Figure 2 shows the AFM
0 nm 0 nm 0 nm
(a) (b) (c)
Figure 2. AFM images of zinc oxide films with (a) 0.1, (b) 0.2 and (c) 0.5 M concentrations on glass/ITO samples
3
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Nanomaterials and Energy Effect of ZnO ETL and MoO3 HTL with
PCDTBT:PC70BM-based BHJ organic
solar cells
Verma, Shukla and Tiwari
0 nm 0 nm 0 nm
(a) (b) (c)
Figure 3. AFM images of PCDTBT:PC70BM films with (a) 0.1, (b) 0.2 and (c) 0.5 M concentrations on glass/ITO samples
images of zinc oxide thin film on ITO glass samples at different 10 min was studied with SEM, and the SEM image is shown in
concentrations of 0.1, 0.2 and 0.5 M with a scanning area of 1 mm2. Figure 4. In Figure 4, it can be seen that the prepared particles
The roughness of the film increased with increasing concentration. formed clusters. The underlying mechanism of this behavior is that
Figure 3 shows the AFM images of PCDTBT:PCBM samples on as the sol–gel concentration increases, the amount of solutes in the
zinc oxide/ITO glass substrates. The roughness of the film decreased sol increases, thereby increasing the probability of solutes clustering
on thermal annealing, showing more pronounced peaks, which can together, forming larger grains.44 The grain size revealed from the
be possible evidence of growing units of donor and acceptor SEM image is consistent with surface roughness measurement and
materials. However, it is not so easy to conclude anything precisely larger grain size results for rougher film, and the crystallite size of
from the AFM images, since these show only the topography of the the annealed thin films is in the range 20–80 nm diameter.
top film surface. These results confirmed that slow growth of the
films can modify the crystalline structure of sol–gel zinc oxide and High-resolution X-ray diffraction patterns were recorded in this
PCDTBT:PCBM polymer and the ordering of the interface work to identify crystalline phases and to estimate the crystalline
arrangement of the bulk. Moreover, it was also observable that just sizes; the patterns are shown in Figures 5(a) and 5(b). These
thermal annealing was required for complete improvement of the results show the XRD peaks for different thicknesses and
device performance. concentrations of zinc oxide thin films on ITO glass annealed at
200°C for 10 min each. These show the semicrystalline structure
The root-mean-square (RMS) and average roughness were analyzed of zinc oxide. When sunlight falls on the glass/ITO side, the
by using the WSxM 5.0 Pro Software.43 The RMS and average absorbance of the photoactive layer is essential in understanding
roughness of zinc oxide and PCDTBT:PC70BM films are high-performance OSC devices. Basically, the absorbance
summarized in Table 1. Further, for surface and roughness
characterization, scanning electron microscopy (SEM) of zinc oxide
films deposited from different concentrations of sols was carried
out. The films were composed of nano-sized zinc oxide colloids,
and the grain size increased with the increase in sol concentration.
The surface RMS roughness of the films obtained from
concentration of the zinc oxide thin films annealed at 200°C for
4
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Nanomaterials and Energy Effect of ZnO ETL and MoO3 HTL with
PCDTBT:PC70BM-based BHJ organic
solar cells
Verma, Shukla and Tiwari
(100)
(002)
(101)
(103)
*
(200)
(002)
* ZnO 4 * ZnO 4
(103)
*
Intensity: arbitrary units
ZnO 3 ZnO 3
ZnO 2 ZnO 2
ZnO 1 ZnO 1
10 20 30 40 50 60 70 80 10 20 30 40 50 60 70 80
2θ: ° 2θ: °
(a) (b)
Figure 5. XRD patterns for zinc oxide thicknesses of 10, 20, 40 and 60 nm with (a) 0.2 and (b) 0.5 M concentrations. *, unknown value;
ZnO 1, zinc oxide 10 nm thick; ZnO 2, zinc oxide 20 nm thick; ZnO 3, zinc oxide 40 nm thick; ZnO 4, zinc oxide 60 nm thick
depends on the material properties and the donor:acceptor The device performance data obtained with a BHJ layer thickness of
concentration. The absorbance spectra of PCDTBT:PC70BM with 80 nm are summarized in Table 2. The optimal thicknesses of zinc
1:4 concentration are shown in Figure 6. From the absorption oxide and molybdenum trioxide were confirmed to be 40 and 10 nm,
measurements, one can easily estimate the absorption and optical respectively. This device shows a maximum PCE = 4.22%, a short-
bandgap of the absorbing materials. The absorption spectrum circuit current Jsc = 9.1 mA/cm2, an open-circuit voltage Voc = 0.86 V
measurements can also help in recording morphological changes and an FF = 0.53. In contrast, the control device (fabricated with the
(e.g. crystallinity of the polymer) in the materials or blends during optimized and modified solvent), as shown in Table 3, has enhanced
device processing (e.g. with different thickness and thermal parameters of PCE = 7.43%, a short-circuit current Jsc = 13.51 mA/
annealing). A UV–visible–near-infrared instrument (Lambda 950) cm2, an open-circuit voltage Voc = 0.98 V and an FF = 0.56. A
was used for analysis of the coatings of thin films. It showed that maximum incident photon conversion efficiency of around 56% for
the PCDTBT:PC70BM polymer material has wide absorbance of the device was achieved. In the literature, various research groups
light around 450–680 nm wavelength. have also achieved significant results in this field for the HTL,
photoactive layer and ETL for efficient device performance of BHJ
The current density–voltage (J–V) characteristics and external OSCs. A comparison of some of the novel works reported in the
quantum efficiency (EQE) spectra of the PCDTBT:PC70BM blend in literature is summarized in Table 4.21,39,45 The maximum PCE
CB and DCB solvents in inverted OSCs fabricated with zinc oxide reported in the literature has been found to be approximately 5.96%.21
ETL and molybdenum trioxide HTL are shown in Figures 7(a)–7(d). Thus, the authors have successfully achieved a promising result,
which is a higher PCE value than that in the literature using the
PCDTBT:PC70BM absorber photoactive layer based on BHJ OSCs.
1.4 × 104
5
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Nanomaterials and Energy Effect of ZnO ETL and MoO3 HTL with
PCDTBT:PC70BM-based BHJ organic
solar cells
Verma, Shukla and Tiwari
40
1
35 ZnO 40 nm
0 ZnO 20 nm
ZnO 40 nm ZnO 60 nm
−1 ZnO 60 nm 30
−2 ZnO 20 nm Chlorobenzene
25
−3
EQE: %
Chlorobenzene
J: mA/cm2
−4 20
−5
15
−6
−7 10
−8
5
−9
−10 0
−0.1 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 300 350 400 450 500 550 600 650 700 750 800
Voltage: V Wavelength: nm
(a) (b)
2 70
0 ZnO 60 nm
ZnO 60 nm 60 ZnO 40 nm
−2 ZnO 40 nm ZnO 20 nm
ZnO 20 nm 50
−4 Dichlorobenzene
Dichlorobenzene
J: mA/cm2
−6
EQE: %
40
−8
30
−10
20
−12
−14 10
−16
0
−0.1 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 300 350 400 450 500 550 600 650 700 750 800
Voltage: V Wavelength: nm
(c) (d)
Figure 7. (a) Light J–V characteristics and (b) EQE spectra of devices made from PCDTBT:PC70BM blend with optimized thickness in CB
and different zinc oxide ETL thicknesses; (c) light J–V characteristics and (d) EQE spectra of devices made from PCDTBT:PC70BM blend with
optimized thickness in DCB solvent and different zinc oxide ETL thicknesses
Table 3. Summary of inverted OSC parameters with optimized thickness and solvents
Device name Voc: V Jsc: mA/cm2 FF: % Rs: W cm2 Rsh: W cm2 PCE: %
Glass/ITO/ZnO/PCDTBT:PC70BM/MoO3/Ag_Device_1 1.03 10.86 59 440 7924 6.59
Glass/ITO/ZnO/PCDTBT:PC70BM/MoO3/Ag_Device_2 0.98 13.51 56 686 5660 7.43
Glass/ITO/ZnO/PCDTBT:PC70BM/MoO3/Ag_Device_3 1.01 12.54 53 201 7204 6.66
stable, with their PCEs remaining unchanged after being stored in Acknowledgements
the air for several days. In order to obtain more efficiency from The facilities provided by the Photonics Research Laboratory, School
multilayer inverted OSCs, further investigation must be carried of Studies in Electronics and Photonics, Pt. Ravishankar Shukla
out to enhance the overall performance of the devices based on University, Raipur, Chhattisgarh, India, are acknowledged. The
novel materials. fabrication and characterization facilities provided by the Indian
6
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Nanomaterials and Energy Effect of ZnO ETL and MoO3 HTL with
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solar cells
Verma, Shukla and Tiwari
Table 4. Comparison between this work and some other novel work reported in the literature
Device structure ETL/active layers/HTL Voc: V Jsc: mA/cm2 FF: % g: % Reference
Pedot:PSS/PCDTBT:PC70BM/MoOx 0.89 18.88 67 6.50 Sun et al.39
PCDTBT:PC70BM/titanium dioxide 0.88 10.59 63 5.96 Park et al.21
PCDTBT:PCBM with silver NPs 0.84 4.64 44 1.72 Parlak et al.45
Zinc oxide/PCDTBT:PC70BM/molybdenum trioxide 0.98 13.51 56 7.43 This work
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