Seat No.: ________ Enrolment No.

___________

GUJARAT TECHNOLOGICAL UNIVERSITY

BE –SEMESTER 1&2(NEW SYLLABUS)EXAMINATION- WINTER 2018

Subject Code: 3110016 Date: 08-01-2019

Subject Name: basic electronics
Time: 10:30 am to 01:00 pm Total Marks: 70
Instructions:
1. Attempt all questions.
2. Make suitable assumptions wherever necessary.
3. Figures to the right indicate full marks.
Marks
Q.1 (a) Explain V-I characteristic of tunnel diode. 03
(b) What is zener breakdown? What is avalanche breakdown? Compare both 04
the type of breakdown.

(c) Write a short note: V-I characteristic of P-N junction diode. 07

Q.2 (a) Design and explain basic NAND gate using DTL logic. 03
(b) Explain following gate using their truth table, logic symbol and equation. 04
Ex-NOR, NAND, NO
(c) Draw and Explain bridge rectifier. Explain advantage and disadvantage of 07
bridge rectifier over full wave rectifier.
OR
(c) Write a short note: Biased clipper circuit. 07
Q.3 (a) Derive the relation between current gain α and β 03
(b) What is DC load line? Explain with necessary diagram. 04
(c) Draw and explain input and output characteristic of transistor in common 07
emitter configuration.
OR
Q.3 (a) What is stability factor? Explain. 03
(b) Give comparison between CE, CB and CC configuration of transistor. 04
(c) What are the different method for biasing the transistor. Explain any two 07
method with necessary circuit diagram.
Q.4 (a) Why biasing circuits are required? 03
(b) Explain why NAND and NOR gate are called universal gate? 04
(c) Explain application of transistor as a switch. 07
OR
Q.4 (a) List out the salient feature of emitter follower. 03
(b) Explain various properties of CB amplifier. 04
(c) Draw and explain the transistor a.c. equivalent circuit. 07

Q.5 (a) Give comparison of BJT and JFET. 03

(b) Draw and explain the self bias circuit of FET. 04
(c) Draw and explain various characteristic of JFET 07
OR
Q.5 (a) What are the advantage of N-Channel MOSFET over P-Channel MOSFET. 03
(b) Explain the application of FET as a buffer amplifier. 04
(c) Write a short note: E-Type MOSFET 07

1
 Seat No.: ________ Enrolment No.___________

GUJARAT TECHNOLOGICAL UNIVERSITY

BE - SEMESTER–I &II (NEW) EXAMINATION – SUMMER-2019
Subject Code: 3110016 Date: 07/06/2019
Subject Name: Basic Electronics
Time: 10:30 AM TO 01:00 PM Total Marks: 70
Instructions:
1. Attempt all questions.
2. Make suitable assumptions wherever necessary.
3. Figures to the right indicate full marks.
Marks
Q.1 (a) Differentiate between insulator, conductor and semiconductor 03
(b) Explain forward bias PN junction diode with diagram 04
(c) Explain
junctionfull
di wave bridge rectifier with neat diagram 07

Q.2 (a) Explain LED diode 03

(b) State different types of diodes. Describe process of testing diode with multi 04
meter.
(c) What is break down diode?? Explain working of zener break down and 07
avalanche break down
OR
(c) Why biasing is important in transistor? Explain voltage divider bias with 07
diagram.
Q.3 (a) What is use of coupling and bypass capacitor? 03
(b) Explain PIN photo diode 04
(c) Draw the circuit of transistor in CE configuration. Sketch the output 07
characteristics and explain active, saturation and cutoff regions
OR
Q.3 (a) What is varactor diode? How capacitance of a diode varies with reverse 03
voltage?
(b) Explain AC loadline with respect to BJT 04
(c) Compare CE, CB and CC configuration with respect to different transistor 07
characteristics
Q.4 (a) What is FET? State important features of FET. 03
(b) Compare BJT and FET 04
(c) Write short note on MOSFET. 07
OR
Q.4 (a) Explain clipping circuit 03
(b) Explain (i) Unipolar device (ii) Transconductance 04
(c) Write shortnote on JFET 07

Q.5 (a) Draw the symbol of NPN and PNP transistor. What is use of transistor? 03
(b) Among TTL and CMOS digital logic family which one is better and why? 04
(c) Draw symbol and explain truth table of all basic logic gates 07

OR
Q.5 (a) State advantage of transistor 03
(b) Explain (i)universal gate (ii) EX-OR logic gate 04
(c) Give comparison between different types of digital logic families 07

****************

1
Seat No.: ________ Enrolment No.___________

GUJARAT TECHNOLOGICAL UNIVERSITY

BE - SEMESTER– I & II (NEW) EXAMINATION – WINTER 2019
Subject Code: 3110016 Date: 06/01/2020
Subject Name: Basic Electronics
Time: 10:30 AM TO 01:00 PM Total Marks: 70
Instructions:

1. Attempt all questions.

2. Make suitable assumptions wherever necessary.
3. Figures to the right indicate full marks.

Marks
Q.1 (a) Draw the circuit diagram of Half wave rectifier. 03
(b) Explain the bridge rectifier with diagrams. 04
(c) Determine the Vo for the network shown in figure 1 07

Figure 1

Q.2 (a) Explain Varactor diode and varistor. 03

(b) Why Zener diode can be used as voltage regulator? 04
Explain Zener as voltage regulator with necessary
diagram
(c) Compare the logic families and explain any one of them. 07
OR
(c) Explain Ex-OR and Ex- NOR gate with truth table and 07
construct OR gate using diodes.
Q.3 (a) Explain about DC load line and Bias point of transistor 03
(b) Explain the working of PIN Diode. 04
(c) Briefly explain the h-parameters and draw h-parameter 07
based equivalent circuit for CE transistor and derive
equation for input impedance, output impedance and
voltage gain.
OR
Q.3 (a) Write truth table of AND, NAND and NOR gates. 03
(b) Explain the selection of a Q point for a transistor bias 04
circuit and discuss the limitations on the output voltage
swing.
(c) Explain the difference between clipping and clamping 07
circuit. A positive voltage clamping circuit and a
positive voltage clipping circuit each have ±12 V square
Wave input. Sketch the output waveform for each
circuit.
Q.4 (a) Draw voltage multiplier circuit. 03
(b) Explain Transconductance and switching in FET. 04
1
 (c)Explain the Depletion region and drain characteristics of 07
n channel JFET.
OR
Q.4 (a) Discuss about VI characteristic of Ideal Diode. 03
(b) Explain FET as an Amplifier. 04
(c) Determine the voltage Vo for the network of Figure 2. 07
Give explanation for your answer.

Figure 2
Q.5 (a) Explain the working of Transistor as Switch 03
(b) Write a short note on E MOSFET as an Amplifier. 04
(c) Design a series noise clipping circuit which rectify the 07
noise signal with amplitude lower than ±VF .
OR
Q.5 (a) Explain the AC load line of transistor. 03
(b) Draw and explain seven segment display. 04
(c) Compare BJT with FET and explain D MOSFET. 07

********

2
Seat No.: ________ Enrolment No.___________

GUJARAT TECHNOLOGICAL UNIVERSITY

BE- SEMESTER–I & II(NEW)EXAMINATION – SUMMER 2022
Subject Code:3110016 Date:24-08-2022
Subject Name:Basic Electronics
Time:10:30 AM TO 01:00 PM Total Marks:70
Instructions:
1. Attempt all questions.
2. Make suitable assumptions wherever necessary.
3. Figures to the right indicate full marks.
4. Simple and non-programmable scientific calculators are allowed.
Marks

Q.1 (a) What is a diode? Write its types and applications. 03

(b) Explain the diode V-I characteristics of ideal and practical PN junction 04
semiconductor diode.
(c) Enumerate the different types of clipping circuits with their different names 07
and input-output waveforms.

Q.2 (a) Why are junction transistors called bipolar devices? 03

(b) The metal lead of the p-side of a p–n diode is soldered to the metal lead of 04
the p-side of another p–n junction diode. Will the structure form an n–p–n
transistor? If not, why?
(c) Sketch the circuit of the common collector mode of BJT and its output 07
characteristics. Derive the expression for the collector current and gain.
OR
(c) Draw the fixed-biased circuit by considering an n–p–n transistor in the CE 07
mode. Derive the expressions for stability factors. What are the functions of
the coupling capacitors?

Q.3 (a) Write a short note on the optocoupler device? 03

(b) Explain the sixteen segment display and its applications with the necessary 04
circuit diagram.
(c) Draw the approximate hybrid model for any transistor configuration at low 07
frequencies. Show that only hie and hfe are essential in the model. Is the
approximation justified?
OR
Q.3 (a) Explain the varactor diode. 03
(b) Explain the contraction of the solar cell with its operational principle. 04
(c) What is self-bias? Draw the circuit showing self-bias of an n–p–n transistor 07
in the CE mode. Explain physically how the self-bias improves stability.

Q.4 (a) What is MOSFET device? Draw its construction diagram. 03

(b) Write short notes on the following : 04
(i) Advantages of JFET (ii) Difference between MOSFET and JFET
(c) Compare the different characteristics of the following semiconductor 07
devices: bipolar junction transistor, field-effect transistor.
OR
Q.4 (a) How will you determine the drain characteristics of JFET? What do they 03
indicate?
(b) Explain the common drain configuration for a JFET. 04
(c) Explain the JFET parameters and establish the relationship between them 07
1
Q.5 (a) What is the thermal runaway in transistors, and how can it be avoided? 03
(b) What is an Early effect, and how can it account for the CB input 04
characteristics?.
(c) What do you mean by the logic gate and its types? Explain the universal 07
logic gates.
OR
Q.5 (a) What is the ac load line in the transistor? Write its significance. 03
(b) The value of alpha increases with the increasing reverse-bias voltage of the 04
collector junction. Why?
(c) Explain the logic families and their types. Describe the characteristics of the 07
same.

**************************

2
Seat No.: ________ Enrolment No.___________

GUJARAT TECHNOLOGICAL UNIVERSITY

BE - SEMESTER–I & II(NEW) EXAMINATION – WINTER 2022
Subject Code:3110016 Date:16-03-2023
Subject Name:Basic Electronics
Time:10:30 AM TO 01:00 PM Total Marks:70
Instructions:
1. Attempt all questions.
2. Make suitable assumptions wherever necessary.
3. Figures to the right indicate full marks.
4. Simple and non-programmable scientific calculators are allowed.
Marks
Q.1 (a) Define between insulator, conductor and semiconductor. 03
(b) What is Zener breakdown? What is avalanche breakdown? Compare both 04
the type of breakdown.
(c) Explain full wave bridge rectifier with neat diagram. 07

Q.2 (a) Design and explain basic NAND gate using DTL logic. 03
(b) Discuss different types of diodes. Describe process of testing diode with 04
multi meter.
(c) Write a short note: V-I characteristic of P-N junction diode. 07
OR
(c) Why biasing is important in transistor? Explain voltage divider bias with 07
diagram.

Q.3 (a) Explain about DC load line of transistor. 03

(b) Explain PIN photo diode. 04
(c) Draw and explain input and output characteristic of transistor in common 07
emitter configuration.
OR
Q.3 (a) What is varactor diode? How capacitance of a diode varies with reverse 03
voltage?
(b) Explain the selection of a Q point for a transistor bias circuit and discuss 04
the limitations on the output voltage swing.
(c) Compare CB and CC configuration with respect to different transistor 07
characteristics.

Q.4 (a) Draw voltage multiplier circuit. 03

(b) Explain (i) Unipolar device (ii) Transconductance. 04
(c) Explain application of transistor as a switch. 07
OR
Q.4 (a) Explain FET as an Amplifier. 03
(b) Explain why NAND and NOR gate are called universal gate? 04
(c) Explain the Depletion region and drain characteristics of n channel JFET. 07

Q.5 (a) Among TTL and CMOS digital logic family which one is better and why? 03
(b) Draw and explain the self-bias circuit of FET. 04
(c) Write a short note: E-Type MOSFET. 07
OR
Q.5 (a) Derive the relation between current gain α and β. 03
(b) What are the advantages of N-Channel MOSFET over P-Channel 04
1
 MOSFET?
(c) Draw symbol and explain truth table of all basic logic gates. 07

**************************

2
Seat No.: ________ Enrolment No.___________

GUJARAT TECHNOLOGICAL UNIVERSITY

BE- SEMESTER–I & II(NEW) EXAMINATION – SUMMER 2023
Subject Code:3110016 Date:11-08-2023
Subject Name:Basic Electronics
Time:10:30 AM TO 01:00 PM Total Marks:70
Instructions:
1. Attempt all questions.
2. Make suitable assumptions wherever necessary.
3. Figures to the right indicate full marks.
4. Simple and non-programmable scientific calculators are allowed.

MARKS
Q.1 (a) Explain zener diode as a Voltage regulator. 03
(b) Compare Half wave rectifier and Full wave bridge rectifier for 04
following parameters.
(i) Average DC Voltage
(ii) Ripple Factor
(iii) PIV
(iv) Rectifier Efficiency
(c) Illustrate the need of clipper circuit and explain Positive clipper and 07
negative clipper with necessary diagram and waveforms.

Q.2 (a) Describe the need of biasing the transistor. 03

(b) Draw the symbol of NPN & PNP transistor, write its different 04
operating regions and also explain why it is called as “Bipolar
Transistor”.
(c) Discuss Common Collector(CC) configuration of transistor and 07
explain its input and output characteristics.
OR
(c) Discuss Common Base(CB) configuration of transistor and explain 07
its input and output characteristics.

Q.3 (a) Derive the relation between current gain α and β 03

(b) Describe the factors affecting the Stability of Q point. 04
(c) Explain the construction, working principle and application of 07
phototransistor.
OR
Q.3 (a) Discuss about leakage current in transistor. 03
(b) Write a short note on Thermal runaway. 04
(c) Describe the construction, the symbol, V-I characteristics and 07
application of Tunnel diode.

Q.4 (a) Discuss about transconductance curve of JFET. 03

(b) Explain transistor as a switch. 04
(c) Explain in detail different models used for AC analysis of BJT 07
circuits.
OR
Q.4 (a) Write applications of JFET. 03
(b) Explain the working of Emitter follower. 04

1
 (c) Draw h parameter equivalent model for CE amplifier and derive the 07
equation for input impedance, output impedance, Voltage gain and
current gain for CE amplifier.

Q.5 (a) Draw symbol, truth table and Boolean equation for EX-OR and EX- 03
NOR gate.
(b) Compare different logic families. 04
(c) Explain the construction and principle of operation of Enhancement 07
type P-channel MOSFET.
OR
Q.5 (a) Design AND, OR and NOT gate using NAND Gate. 03
(b) Explain Transistor Transistor Logic (TTL). 04
(c) Explain the construction, working and drain characteristics of N- 07
Channel JFET.

*************

2
 Seat No.: ________ Enrolment No.___________

GUJARAT TECHNOLOGICAL UNIVERSITY

BE - SEMESTER–I (NEW) EXAMINATION – WINTER 2023
Subject Code:3110016 Date:25-01-2024
Subject Name:Basic Electronics
Time:02:30 PM TO 05:00 PM Total Marks:70
Instructions:
1. Attempt all questions.
2. Make suitable assumptions wherever necessary.
3. Figures to the right indicate full marks.
4. Simple and non-programmable scientific calculators are allowed.
MARKS

Q.1 (a) Draw symbol and truth table for AND, NOR, EX-OR logic gates. 03
(b) Discuss forward and reverse bias operation of a P-N junction diode with depletion 04
region.

(c) Draw CB configuration and discuss its input and output characteristics with ICBO, ri, 07
ro, and current gain α.

Q.2 (a) Describe Negative clamper circuit with necessary waveforms 03

(b) Describe RC filter with its limitations. 04
(c) Draw circuit diagram of Center-taped full wave rectifier and explain its operation with 07
necessary waveforms and derivation of Vdc.
OR
(c) Describe diode approximations in detail. 07

Q.3 (a) Draw circuit for Voltage doubler and explain its operation. 03
(b) Briefly explain the effect of coupling capacitor and bypass capacitor on small signal 04
transistor amplifier.
(c) Draw circuit for Emitter feedback bias and explain in detail with its advantages and 07
disadvantages.

OR
Q.3 (a) State the difference between Avalanche breakdown and Zener breakdown. 03
(b) Discuss Zener diode as voltage regulator. 04
(c) Discuss load line, Q point, DC & AC load lines for BJT. 07

Q.4 (a) Derive relation between α & β for BJT. 03

(b) Compare different BJT configurations. 04
(c) Describe working principle and applications of PIN Photo diode and Solar cell. 07
OR
Q.4 (a) Briefly explain regions of operation for BJT. 03
(b) Discuss seven segment displays with its types. 04
(c) Draw CE configuration and discuss its input and output characteristics with ICEO, ri, 07
ro, and current gain β.

1
Q.5 (a) Compare FET with BJT. 03
(b) Explain FET as a switch. 04
(c) State different logic families and compare them in terms of fan in, fan out, propagation 07
delay, noise margin, power dissipation.

OR
Q.5 (a) Construct AND & OR gates with diodes. 03
(b) Explain FET as an amplifier. 04
(c) Explain Drain characteristics and Transfer characteristics of JFET in detail with all 07
related terms as Transconductance gm, drain resistance rd, and amplification factor µ.

*************

2
Enrolment No./Seat No_______________

GUJARAT TECHNOLOGICAL UNIVERSITY

BE - SEMESTER–I & II (NEW) EXAMINATION – SUMMER 2024
Subject Code:3110016 Date:06-07-2024
Subject Name:Basic Electronics
Time:02:30 PM TO 05:00 PM Total Marks:70
Instructions:
1. Attempt all questions.
2. Make suitable assumptions wherever necessary.
3. Figures to the right indicate full marks.
4. Simple and non-programmable scientific calculators are allowed.
Q.1 (a) Explain series positive clipper with diagram. 03
(b) Draw and explain V-I characteristic of P-N junction diode. 04
(c) Draw and Explain bridge rectifier. Explain advantage and disadvantage of bridge 07
rectifier over full wave rectifier.
Q.2 (a) Drive the relation between current gain α and β for CE configuration. 03
(b) Draw the symbol of NPN & PNP transistor. Also state the advantage of transistor. 04
(c) Draw and explain input and output characteristic of transistor in CE configuration. 07
OR
(c) Compare CE, CB, and CC configuration with respect to different transistor 07
characteristics.
Q.3 (a) Explain V-I characteristics of tunnel diode. 03
(b) Explain Schottky diode in details. 04
(c) Comparison between P-N junction Diode and Zener Diode. 07
OR
Q.3 (a) Advantage, disadvantage and application of LED. 03
(b) Compare PIN diode and Photo Diode. 04
(c) State the applications of Rectifier, and Comparison of Halfwave, Full-wave 07
center- tap and Full-wave Bridge rectifier.
Q.4 (a) List out the salient feature of emitter follower. 03
(b) Classification of Logic families in details. 04
(c) Explain application of Transistor as a switch. 07
OR
Q.4 (a) Explain Negative Clamping circuit with diagram. 03
(b) Explain why NAND and NOR gate are called universal gate. 04
(c) Discuss MOSFET in details. 07
Q.5 (a) Define the use of Coupling capacitor. 03
(b) Give Comparison of BJT and FET. 04
(c) Draw symbol and explain all logic gates in details. 07
OR
Q.5 (a) Explain the properties and application of common base amplifier. 03
(b) State advantage, disadvantage and application of FET. 04
(c) Give comparison between different types of digital logic families. 07

*********************

1
Enrolment No./Seat No_______________

GUJARAT TECHNOLOGICAL UNIVERSITY

BE- SEMESTER–I & II EXAMINATION – WINTER 2024
Subject Code:3110016 Date:17-01-2025
Subject Name:Basic Electronics
Time:10:30 AM TO 01:00 PM Total Marks:70
Instructions:
1. Attempt all questions.
2. Make suitable assumptions wherever necessary.
3. Figures to the right indicate full marks.
4. Simple and non-programmable scientific calculators are allowed.
Marks
Q.1 (a) Sketch the characteristics of ideal diode and approximate characteristics of 03
practical diodes. Briefly explain it.
(b) Draw two-diode full-wave rectifier circuit and explain its operation. 04
(c) Explain positive and negative voltage clamper circuit with waveforms. 07

Q.2 (a) What are three modes of transistor operation, explain it. 03
(b) What is you understand by transistor biasing and why it is required. 04
(c) Compare CB, CE and CC configuration. 07
OR
(c) Explain the operation of voltage divider bias circuit using an npn transistor 07
and write its voltage and current equation.

Q.3 (a) What is photo-diode and how it works? 03

(b) What is varactor diode, and explain how it works? 04
(c) In CE amplifier has hie = 2.1 KΩ, hfe = 75 and hoe =1 µS, voltage divider 07
resistance R1= 68 kΩ and R2= 56 kΩ, Rc=3.9 kΩ, RE= 4.7 kΩ and RL= 82
kΩ. Calculate input impedance, output impedance and voltage gain.
OR
Q.3 (a) What is tunnel diode, and explain how it works? 03
(b) Explain how Zener diode maintains constant voltage across load with 04
circuit.
(c) Draw single stage CE amplifier and analyze and explain how it works. 07

Q.4 (a) Define saturation current, pinch off voltage and transconductance in JFET. 03
(b) Do comparison between BJT and FET and write it. 04
(c) Analyze and explain CB amplifier and find its input impedance, output 07
impedance and voltage gain
OR
Q.4 (a) Define performance parameter of JFET a.c. drain resistance, 03
trnasconductance and amplification factor.
(b) In n-channel JFET with VGS(off) =-6 V and IDSS = 3 mA Solve ID value for 04
VGS =-1,-3, and -5 V.
(c) Consider a CB amplifier utilizing a BJT biased at Ic= 1 mA with Rc = 5 kΩ, 07
RL= 5 kΩ. Determine Rin, Avo, Av, and Ro.

Q.5 (a) What is logic gates and state the rule used for OR and AND gate. 03
(b) Why NAND and NOR gates are called universal gate and draw truth table 04
of NAND gate.
(c) Write and explain application of FET as amplifier and as a switch. 07

1
 OR
Q.5 ̅.
(a) Draw the logic circuit for the Boolean expression Y = ABC + D 03
(b) Explain Transistor Transistor Logic (TTL). 04
(c) Using common source circuit have a R1=5.6 MΩ, R2= 1 MΩ, RD=RS = 2.7 07
KΩ, rd = 100 KΩ and Yfs = 3000 µS calculate input impedance, output
impedance and voltage gain.

************************

2
 Enrolment No./Seat No_______________

GUJARAT TECHNOLOGICAL UNIVERSITY

BE- SEMESTER–I & II EXAMINATION – WINTER 2024
Subject Code:BE01000111 Date:10-01-2025
Subject Name:Basic Electronics Engineering
Time:10:30 AM TO 01:00 PM Total Marks:70
Instructions:
1. Attempt all questions.
2. Make suitable assumptions wherever necessary.
3. Figures to the right indicate full marks.
4. Simple and non-programmable scientific calculators are allowed.
Marks
Q.1 (a) Explain working of Zener break down. 03
(b) Explain forward bias PN junction diode with diagram. 04
(c) Write a short note: V-I characteristic of P-N junction diode. 07

Q.2 (a) Why Zener diode can be used as voltage regulator? 03

(b) Explain advantage and disadvantage of bridge rectifier over full wave rectifier. 04
(c) Explain half wave rectifier with neat diagram and also draw the output waveform. 07
OR
(c) Explain the shunt and series clipping circuits with diagram. 07

Q.3 (a) Draw the symbol of PNP transistor and NPN transistor and explain why it is 03
called ″Bipolar Transistor‫?״‬
(b) Explain solar cell with diagram. 04
(c) Draw the circuit of CB configuration of transistor and explain Input and output 07
characteristics of CB configuration of transistor.
OR
Q.3 (a) Derive relationship between α dc and β dc of a transistor. 03
(b) Explain fixed bias and self bias in a transistor. 04
(c) Derive h parameters for transistor CE amplifier. Also Draw and explain h 07
parameter equivalent model for CE amplifier.

Q.4 (a) Draw voltage multiplier circuit. 03

(b) Explain FET as an Amplifier 04
(c) Compare CE, CB and CC configuration with respect to different transistor. 07
OR
Q.4 (a) Explain in brief applications of JFET. 03
(b) Explain Transconductance and switching in FET. 04
(c) Compare the different characteristics of the following semiconductor devices: 07
bipolar junction transistor, field-effect transistor.

Q.5 (a) Explain the AC load line of transistor. 03

(b) Explain E-type MOSFET with neat diagram. 04
(c) Write a short note on Tunnel diode. 07
OR
Q.5 (a) What is DC load line? Explain with necessary diagram. 03
(b) Explain D-type MOSFET with neat diagram. 04
(c) Write a short note on seven segment display with diagram. 07

*****************************