Electronic Circuits

Bipolar Junction
Transistor (BJT)

Dr Naser Sedghi

[email protected]
 Learning Outcomes

• BJT structure
• BJT operation
• BJT configurations
• BJT equivalent circuit
• Large signal, and dc models
• BJT characteristics
• Modes of operation

Electronic Circuits ELEC104 2

 Transistor

The invention of the

transistor in 1960s
revolutionised
electronics (then
based on valve
technology) and led
to the downsizing of
electronic circuits and
the realisation of the
personal computers.

Electronic Circuits ELEC104 3

 Why is this Lecture Useful?
• BJT is the first transistor invented.
• It has many applications in analog and digital circuits.
• It is widely used in discrete and integrated amplifier circuits,
like OpAmps.
• Another application is in integrated voltage regulator circuits.
• It has also applications in digital integrated circuits.
• Although its digital applications are overshadowed by another
transistor, MOSFET, the two widely used logic families, TTL and
ECL are made of BJTs.
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BJT Structure
Bipolar Junction Transistor (BJT)
BJT simply consists of two pn junctions.

n p n

But it’s more than that.

Transistor ≠
Electronic Circuits ELEC104 6
 BJT Operation

n p n

R2 V2 V1 R1

• The pn junction at the right is in forward bias.

• Electrons diffuse from n to p and recombine with holes.
• The pn junction at the left is in reverse bias.
• There is a larger depletion region at the junction between n and p.
• The doping concentration of p is less than n. The depletion region
in p side is wider than n side.

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 A Closer Look
Depletion
Region

n - + p n

Electric Diffused
Field Electrons

• A large number of electrons diffuse from n at the right side to p.

• Very few of them have the chance to recombine (low doping, narrow p).
• When they reach to depletion region of the left junction they are drifted away by strong
electric filed.
• There is a large current in the reverse pn junction at the left (nearly the same as the right
side pn junction).
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 Current at Terminals
Collector (C) Emitter (E)
n p n
IC IE

RC VCC IB Base (B) VEE RE

• The n at the right side emits electrons to the p. It is called Emitter.

• The electrons are drifted to the n at the left side by strong field. They are then
collected by the terminal to n. It is called Collector.
• Very few electrons are recombined in p, creating a small current at its terminal.
• The p region, despite its very small current, controls the current between two n
regions. It is called Base.

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 npn Transistor Currents and Voltages
C
Collector (C) n p n Emitter (E)

B IC IE

RC VCC IB Base (B) VEE RE

E
Transistor Symbol (npn)

• The pn junction between base and emitter is in forward bias.

Main transistor equations: • The voltage across it, , is like the voltage of a forward bias
diode (0.6, 0.7 V for Si).
• The pn junction between collector and base is in reverse bias.
Its voltage, , depends on and the external circuit.

Electronic Circuits ELEC104 10

 Question

The semiconductors on both sides of the figure are n-type. If we

put the left pn junction in forward and the right one in reverse
(swap collector and emitter), will it still work as a transistor?

Collector (C) n p n Emitter (E)

IC IE

RC VCC IB Base (B) VEE RE

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 pnp Transistor Currents and Voltages
C
Collector (C) p n p Emitter (E)

B IC IE

RC VCC IB Base (B) VEE RE

E
Transistor Symbol (pnp)
• The same way a pnp transistor can be
Main transistor equations: fabricated.
• The main current in pnp transistor is by holes.
• The direction of all currents and polarity of all
voltages are opposite of the npn transistor.

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 BJT Structure

What you need to know:

• The basic structure of the BJT.
• Different regions in a BJT (emitter, collector, and base).
• How a BJT works.
• npn and pnp transistors.

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BJT Configurations
 Common Base Configuration
RC npn RE RC pnp RE

IC IE IC IE
IB VEE VCC IB VEE
VCC

RC RE RC RE
+VCC −VEE −VCC +VEE
IC IE IC IE
IB IB

• Forward bias is applied between base and emitter and

reverse bias is applied between collector and base. The configuration is called
• Base is common between the two bias circuits. common base (CB).
• Bias sources are shown with double subscript: VCC, VEE.

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 Common Base dc Current Gain
RC
npn RE
pnp
RC RE
+VCC −VEE −VCC +VEE
IC IE IC IE
IB IB

• Charge carriers (electrons in npn and holes in pnp) are diffused or injected from emitter to base.
• Very few of them are recombined and make the base current.
• Majority of them are drifted by strong field in CB junction and are collected by collector.

𝐼 𝐶 =𝛼 𝐼 𝐸 is common base dc current gain, very close to 1, e.g. 0.99.

𝛼 𝛼 is a very large number,

𝐼 𝐶 =𝛼 𝐼 𝐸 = 𝐼 𝐵= 𝛽 𝐼 𝐵 𝛽=
1 −𝛼 1 −𝛼 e.g. 100, 500.

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 Common Emitter Configuration
npn +VCC

• If we apply a bias between

IC RC IC RC
collector and emitter, as long as
VCC
RB RB
+VBB
the BE junction will be in forward IB IB
VBB IE
bias and the circuit operation will IE
be the same.
• Forward bias is applied between pnp − VCC
base and emitter and the bias
RC IC RC
applied between collector and IC
VCC
emitter keeps CB junction in RB RB
reverse. − VBB
VBB IB IB
• Emitter is common, so it is called IE IE
common emitter.
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 Common Emitter Configuration
npn +VCC

𝐼 𝐶 =𝛼 𝐼 𝐸 IC RC

RB
+VBB
𝛼 IB
𝐼 𝐶 =𝛼 𝐼 𝐸 = 𝐼 𝐵= 𝛽 𝐼 𝐵 IE
1 −𝛼

𝐼𝐶 𝛼
𝛽= =
𝐼 𝐵 1 −𝛼
pnp − VCC

IC RC
is common emitter dc current gain.
Very large, 100, 500, 1000. RB
− VBB
𝐼𝐶
𝐻 𝐹𝐸 = h 𝐹𝐸 = 𝛽= IB
IE
𝐼𝐵

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BJT Models
 Transistor Equivalent Circuit
αNIED αIICD
npn
IC IE
C E
ICD IED

B
• This is a precise transistor model which works on any situations.
• In normal operation (forward mode or normal mode), BE is in forward and CB is in
reverse: and .
• We can bias BC as forward and EB in reverse. In this case collector acts as emitter,
and emitter acts as collector.
• It is called reverse (inverse) mode: and .
• However, the current gain, ,is very low (in range of 0.1, 0.2, …).
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 BJT Modes of Operation
αNIED αIICD
npn
IC IE
C E
ICD IED

Active: ,
Active Reverse: ,
Cut off: ,
Saturation: ,

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 Large Signal and dc Model (CB)
αNIED αNICD

Active mode IC IE
C E
ICD IED

B
IC αIE IE IC αIE IE
C + −
E C + −
E

VCB − + VBE VCB − + VBE

B B
Large signal model dc model
(common base) (common base)

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 Large Signal and dc Model (CE)
iB iC IB IC
B+ C B+ C
+ +
vBE βiB vCE VBE βIB VCE

− − − −
E E E E

Large signal model (equivalent circuit) dc model (equivalent circuit)

(common emitter) (common emitter)
𝑉 𝐵𝐸 ≈ 0.6 V
𝑖𝐶 = 𝛽 𝑖 𝐵 𝐼 𝐶= 𝛽 𝐼 𝐵
𝛼 𝛼
𝛽= h 𝐹𝐸= 𝛽= 𝐻 𝐹𝐸 =
1− 𝛼 1− 𝛼

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 BJT Large Signal and dc Models

What you need to know:

• Common base configuration.
• Common emitter configuration.
• BJT equivalent circuit.
• Large signal and dc models.
• Common base and common emitter dc current gain.

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BJT Characteristics
 Transistor Characteristics
Common emitter (CE)

Input characteristics Output characteristics

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 Transistor Characteristics

Active

Saturation

Cut off

Input characteristics Output characteristics

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 BJT Characteristics

What you need to know:

• Input and output characteristics.
• Regions of operation (active, cut-off, and saturation)

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Modes of Operation
 Modes of Operation (Active)
+VCC IB IC
B+ C
+
IC RC VBE βIB VCE

+ − −
RB E E
+VBB VCE
+
IB VBE
−
− 𝐼 𝐶= 𝛽 𝐼 𝐵

• BE in forward bias, .
• CB in reverse bias, , usually a large
voltage.

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 Modes of Operation (Cut Off)
iB iC
B+ C • BE in reverse bias or forward with a
+ voltage less than cut-in voltage.
vBE βiB vCE • No current in base, therefore no
current in collector.
− −
E E

𝐼 𝐵 =0 𝐼 𝐶 =0
B + +
C

𝑉 𝐵𝐸 𝑉 𝐶𝐸
− −
E E
𝑉 𝐵𝐸 <𝑉 𝐵𝐸 ¿
𝑉 𝐶𝐸 =𝑉 𝐶𝐶 − 𝑅 𝐶 𝐼 𝐶 =𝑉 𝐶𝐶
Electronic Circuits ELEC104 31
 Modes of Operation (Saturation)
IB IC
B C Saturation
+ +

VBE VCE(sat) VCE

− −
E E
𝑉 𝐵𝐸 =0.6 V
𝑉 𝐶𝐸 =𝑉 𝐶𝐸 ( sat ) =0 ¿ 0.3 V ≈ 0
• Both BE and BC junctions in
forward bias. 𝐼𝐶
• very close to zero. Condition for saturation: 𝐼 𝐵>
• independent from transistor 𝛽
𝐼𝐶
parameters. < 𝛽 ( active )
𝐼𝐵
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 BJT Modes of Operation

What you need to know:

• Modes of operation (active, cut off, and saturation).
• Large signal and dc models for each mode.
• Condition for saturation.

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Small Signal Models
 BJT Analog Applications
+VCC
• In analog applications, like in
amplifiers, BJT works in the
active region.
• This is done by a dc bias circuit. RC
RB Co
• A small signal from source is Load
amplified by the transistor and is Source
Ci +
delivered to the load. Rs

• The dc and small signal (most of + vo RL

the time ac) analysis are done vs vi
separately. −
−
• dc analysis: bias in active region.
• Small signal or ac analysis: using
BJT small signal model.

Electronic Circuits ELEC104 35

 Small Signal Model
• For ac analysis we need an equivalent circuit or a model.
• There are various small signal models for transistor.
• The most common model is the hybrid model (h
parameters).
ib ic
• Hybrid-π model is also used, particularly in analysis of
B C
wideband amplifiers.
i
+ +
b ic
B C 1
vbe hie hfeib v
+ + h𝑜𝑒 ce
− −
vbe hie hfeib vce E E
A more precise model
− −
E E
hie: CE input resistance
Simplified common emitter (CE)
hybrid model hfe ≈ β: CE ac current gain
hoe : CE output conductance
Electronic Circuits ELEC104 36
CE Input Resistance hie
is dynamic resistance of the pn junction at base-
Input characteristics emitter. It can be found from input characteristics.
iB

| |
Slope = 𝑣 𝑏𝑒 𝑑 𝑣 𝐵𝐸
h 𝑖𝑒= 𝐼 𝐵= 𝐼𝐵
ib 𝑖𝑏 𝑑 𝑖𝐵
Q
IB
From pn junction equation (Lecture 2):

𝜂 𝑉 𝑇 𝛽𝜂 𝑉 𝑇
VBE
vBE h 𝑖𝑒= =
𝐼𝐵 𝐼𝐶
vbe
Example:
100 × 26 mV
h 𝑖𝑒= =2.6 k Ω
1 mA

Electronic Circuits ELEC104 37

 CE Small Signal Current Gain hfe
Example:

8 mA 80 μA
ic ib
Q

4 mA 40 μA

𝑖𝑐
h 𝑓𝑒= 𝑉 𝐶𝐸 =
𝑖𝑏 |𝑑 𝑖𝐶
𝑑 𝑖𝐵
𝑉 𝐶𝐸
|
is the CE ac current gain. h 𝑓𝑒 ≈ 𝛽=h 𝐹𝐸
It can be found from output characteristics.

Electronic Circuits ELEC104 38

 CE Output Conductance hoe

ic
h 𝑜𝑒 =
𝑖𝑐
|
𝑣 𝑐𝑒
𝐼 𝐶=
𝑑 𝑖𝐶
𝑑 𝑣 𝐶𝐸 |
𝐼𝐶

• : slope of the output characteristics.

• is usually very small and is ignored in
most cases.
• It is significant only at very large currents.
• : output resistance, very large, usually
vce
much larger than the other resistors in the
circuit.
• It is used only when the other resistors in
the circuit (e.g. RC) are as large.

Electronic Circuits ELEC104 39

 Hybrid-π Model
ib ic ib ic
B C B C
+ + + +
1
vbe rbe gmvbe rce vce vbe hie hfeib v
h𝑜𝑒 ce
− − − −
E E E E
Hybrid-π Model Hybrid Model

𝑟 𝑏𝑒 =𝑟 𝜋 =h𝑖𝑒 𝑟 𝑐𝑒 =1/ h𝑜𝑒

𝑖𝑏 h 𝑓𝑒
𝑔 𝑚 𝑣 𝑏𝑒=h 𝑓𝑒 𝑖𝑏 𝑔 𝑚= h 𝑓𝑒 𝑔 𝑚= Transconductance
𝑣 𝑏𝑒 h𝑖𝑒
• Hybrid-π can be used for analysis like hybrid model. 𝐼𝐶
• Mostly used in analysis of wideband amplifiers. 𝑔𝑚 ≈ =40 𝐼 𝐶
𝜂𝑉𝑇

Electronic Circuits ELEC104 40

 Small Signal Models

What you need to know:

• Hybrid and hybrid-π small signal models
• Definition of parameters in the models
• Finding h-parameters from the BJT characteristics

Electronic Circuits ELEC104 41

Darlington Pair
 Darlington Pair
C 𝐼 𝐵 2=𝐼 𝐸 1=( 1+ 𝛽1 ) 𝐼 𝐵
Q1: low power transistor
Q2: high power transistor IC1
𝐼 𝐶1 =𝛽 1 𝐼 𝐵 1
IC = IC1 + IC2
𝐼 𝐶 2=𝛽 2 𝐼 𝐵 2= 𝛽2 ( 1+ 𝛽1 ) 𝐼 𝐵
IB = IB1 IC2
B Q1

Q2
IE1 = IB2

IE = IE2
• The pair works like a single 𝛽= 𝛽1 + 𝛽2 ( 1+ 𝛽1 ) ≈ 𝛽 1 𝛽2
transistor with very large .
• It is used in power amplifiers, E
h 𝑓𝑒 ≈ h 𝑓𝑒1 h 𝑓𝑒 2
usually as emitter follower.

Electronic Circuits ELEC104 43

 Darlington Pair

What you need to know:

• Operation of Darlington pair.
• Relationship between the total β of the circuit and the β of
each transistor.
• Deriving the equation of the total β.

Electronic Circuits ELEC104 44

 BJT Applications

Electronic Circuits ELEC104 45

 BJT Amplifier
• BJT as an amplifier should work in the active region.
• This is done by a dc bias circuit.
• A small signal from source is amplified by the transistor and is
delivered to the load.
• The dc and small signal (most of the time ac) analysis are done
separately.
• dc analysis: bias in active region.
• Small signal or ac analysis: amplifier parameters.

Electronic Circuits ELEC104 46

 BJT as a Switch
• BJT as a switch works in either cut-off or saturation region.
• The BJT is switched between these two modes by a digital (binary) signal at
the input.
• It has only two values, either 0 V, or a large positive voltage, close to VCC.
• The output also has only two values (binary),
• The BJT as a switch is a logic gate: NOT.
• NOT gate or inverter is combined with AND and OR gates to make other
logic gates.
𝐼𝐶
Condition for cut-off: 𝑉 𝐵 𝐸 < 𝑉 𝐵𝐸 ¿ Condition for saturation: 𝐼 𝐵>
𝛽

Electronic Circuits ELEC104 47

 BJT Applications

What you need to know:

• Concept of the BJT operation in amplifiers and in switching.
• Modes of operation in each application.

Electronic Circuits ELEC104 48

 Overview

• BJT structure
• BJT operation
• BJT configurations
• BJT equivalent circuit
• Large signal, dc, and small signal models
• BJT characteristics
• Modes of operation
• Darlington pair
• BJT applications
Electronic Circuits ELEC104 49