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Semi DPP

The document covers topics related to semiconductors, including energy band theory, electrical properties, P-N junctions, and their applications such as rectifiers and solar cells. It includes various questions and answers about semiconductor properties, doping effects, and diode characteristics. Key concepts discussed include energy gaps, depletion regions, and the behavior of diodes under different biasing conditions.

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9 views22 pages

Semi DPP

The document covers topics related to semiconductors, including energy band theory, electrical properties, P-N junctions, and their applications such as rectifiers and solar cells. It includes various questions and answers about semiconductor properties, doping effects, and diode characteristics. Key concepts discussed include energy gaps, depletion regions, and the behavior of diodes under different biasing conditions.

Uploaded by

HemantSuman
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© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
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Semi Conductors & 42 Electronics | DPP-1 Qi Qe Qs Qs Qs Qé Qz Qs Topics Covered : Energy Band theory and electrical properties of matter Energy bands in solids are a consequence of : () Ohm's Law (2) Pauli's exclusion principle (3) Bobr's theory (4) Heisenberg's uncertainty prineiple A Ge specimen is doped with Al The concentration of acceptor atoms is ~ 108! atoms/m?. Given that the intrinsic concentration of electron hole pairs is~ 10", the concentration of electrons in the specimen is 4) 107m 2) 10%1ms (8) 10%ms (4) 102m? ‘The energy gap of silicon is 1.14 eV. The maximum wavelength at which silicon will begin absorbing energy is, (a) 10888 A (2) 1088.8 A (3) 108.88 A @) 10.888 A Based on the energy band description, solid can be classified as a semiconductor if the energy gap between the valence band and conduction band is ()30V GeV @)E,<3eV )E,=00V ‘The forbidden energy gap in Ge is 0.72 eV. Given, he = 12400 eV — A, The maximum wavelength of radiation that will generate electron hole pair is (a) 172220 A 17224 (172224 172A Pure Si at 500 K has equal number of electron (n,) and hole (n,) concentrations of 1.6 x 1038 mrs, Doping by indium increases n,, to 4.5 X 102 m-, The doped semiconductor is of (1) n-type with electron concentration n, = 2.5 % 102! m-! (2) p-type having electron concentration n, = 5 10" m- (3) n= type with electron concentration n, = 5% 102 ms (4) p~ type with electron concentration n, = 2.5 X 10 m-t ‘The resistance of a germanium junction diode whose V — 1 is shown in figure is (Vj, = 0. (5 ka 2) 0.2k2 (3)2.9ka @ (3) ko A source voltage of 8V drives the diode in figure through a current-limiting resistor of 100 ohm. Then he mapaitadaof the elope la line.on the ¥-Toharanberition cf the diode Lav re 1002 0.01 2) 100 (3) 0.08 12.5 © scanned with OKEN scanner Qe 1en is made into a P-type semi-conductor by doping, on an average, one indium atom per 5 10" silicon atoms. If the number density of atoms in the silicon specimen is 5 x 10% atoms/m?, then the number of acceptor atoms in silicon per cubic centimeter will be (1) 2.5 % 10% atomsvem? (2) 1.0 10" atomslem? (3) 1.0 10 atomslem’ (4) 2.5 x 10% atomelem* Q.10 The valence of an impurity added to germanium crystal in order to convert it into a P-type semi conductor is, Ms @s @a as Q.11 _ Formi level of energy of an intrinsic semiconductor lies (1) In the middle of forbidden gap (2) Below the middle of forbidden gap (3) Above he middle of forbidden gap (4) Outside the forbidden gap Answer & Solutions )y 4G) 5G) —G ) 1) 1. Formation of energy bands in solids are due to Pauli's exclusion principle. & If i is the current in the diode and V is 2 In, => (LOM = 108m, = 10Hms, voltage drop across it, then for given Sirure voltage equation is, he _ 66x10 x3%10" 7 3. Doggy = HE = 9GX10 T3810" — ogee A ix100+V=8> Pau Lax 16x10-™ = i=-(0.0NV+0.08 5 = he 5. Enerey gap, B= >= ‘Thus the slope of iV graph = t =0.01 1 = he = 124000VA _ yr909 4 9. Number density of atoms in silicon specimen 6 =5 x 10% atomim? since one atom of indium is dopped in 5 x 107 si atoms, s0 no. of indium atoms dopped per em? of 0.5 x 10'°= 5x 10° - 5x10¥ oe a Sesies silicon, n= PG = BX 10! atom/on ‘Semiconductor is p-type and n,=5 % 10? m+. a on 1 b 7. V,=knee voltage =0.3 V ney an Sd Resistance = 4V. VB. ai © scanned with OKEN scanner Semi Conductors & Electronics | DPP-2 Topics Covered : P-N junction and its properties, Potential barrier, Depletion region Qu Qe Qs Qs ‘The reverse biasing in a PN junction diode (1) Decreases the potential barrier (2) Increases the potential barrier (@) Increases the number of minority charge carriers (4) Increases the number of majority charge carriers ‘The cause of the potential burrier in a P-N diode is (1) Depletion of positive charges near the junction (2) Concentration of positive charges near the junction (3) Depletion of negative charges near the junetion (4) Concentration of positive and negative charges near the junction If the forward voltage in a semiconductor diode is doubled, the width of the depletion layer will (2) Become half (2) Become one-fourth (3) Remain unchanged (4) Become double For the given circuit of PN-junction diode, which of the following statement is correct, R be Vv (2) In forward biasing the voltage across R is V (2) In forward biasing the voltage across R is 2V (8) In reverse biasing the voltage across R is V (4) In reverse biasing the voltage across tis 2V Of the diodes shown in the following diagrams, which one is reverse biased +5 ty I 10 a rR @ rR @ Re @ * sv OR “Vv > —tov A potential barrier of 0.50 V exists across a P-N junction. If the depletion region is 6.0 x 107 m wide, the intensity of the electric field in this region is, (Q) 1.0% 10°-Vim @)10%105Vin (8) 2.0% 105 Vim (4) 2.0 10 Vin CAREER POINT | Physics 391 © scanned with OKEN scanner Semi Conductors & Electronics | DPP-2 Topics Covered : P-Njunciion and its properties, Potential barrier, Depletion region Qu Qe Qs Qs ‘The reverse biasing in a PN junction diode (1) Decreases the potential barrier (2) Increases the potential barrier (@) Increases the number of minority charge carriers (4) Increases the number of majority charge carriers ‘The cause of the potential barrier in a P-N diode is (1) Depletion of positive charges near the junction (2) Concentration of positive charges near the junction (3) Depletion of negative charges near the junetion (4) Concentration of positive and negative charges near the junction If the forward voltage in a semiconductor diode is doubled, the width of the depletion layer will (Q) Become half (2) Become one-fourth (3) Remain unchanged (4) Become double For the given circuit of PN-junction diode, which of the following statement is correct, R be v' ) In forward biasing the voltage across R is V (2) In forward biasing the voltage across R is 2V (8) In reverse biasing the voltage across R is V (4) In reverse biasing the voltage across Ris 2V Of the diodes shown in the following diagrams, which one is reverse biased +5 ty I 10 a rR @ rR @ R @ * sv OR “Vv - —tov A potential barrier of 0.50 V exists across a P-N junction. If the depletion region is 6.0 x 10-7 m wide, the intensity of the electric field in this region is, (Q) 1.0% 10°-Vim @)1.0%10Vin (8) 2.0% 105 Vim (4) 2.0 10 Vin © scanned with OKEN scanner Qz as ‘A semiconductor X is made by doping a germanium crystal with arsenic (% = 33). A second semiconductor Y is made by doping germanium with indium (4 = 49). The two are joined end to end and connected to a battery as shown. Which of the following statements is correct (a) X is P-type, ¥ is N-type and the junction is forward biased (2) X is N-type, ¥ is P-type and the junction is forward biased (8) X is Petype, ¥ is N-type nnd the junction is reverse biased (@) X is N-type, Y is P-type and the junction is reverse biased In a reverse biased diode when the applied voltage changes by 1 V, the current is found to change by 0.5 1A. The reverse bias resistance of the diode is ()2x10.0 (2x 10° (3) 2000 (20 ‘Ap—n junction diode contains a depletion layer (1) Only if it is unbiased (2) Only if is forward biased (8) Only if it is reverse biased (4) Irrespective of whether it biased or unbiased Q.10 ‘Tho i-V characteristic of a P-N unction diode is shown below. The approximate dynamic resistance of the P. junction when a forward bias of 2volt is applied 221 Vvolt) aia 0.25.0 050 5a Answer & Solutions LQ) 24) 3) 4.0) 5.3) 6.41) 74) 8.(2) 9.4) 10.(2) 1. In reverse biasing, width of depletion layer Y becomes P-type semiconductor. Also N increase (ie., X) is connected to positive terminal of 4. In forward biasing, resistance of PN junction battery and P(ie., Y) is connected to negative diode is zero, so whole voltage appears across terminal of battery so PN-junetion is reverse the resistance. biased, 5. Because N-side is more positive as compared 8. Reverse resistance to P-side av 1 WN _1__ lsxie 6. 05 AL 05x10" x10 10, The current at 2V is 400 mA and at 2.1 V it is 7. Arsenic has five valence electrons, so it a 800 mA, donor impurity. Hence X becomes N-type ‘The dynamic resistance in this region semiconductor. Indium has only three outer AV (21-2) 1 electrons, so it is an acceptor impurity. Hence “AT > 00 —d0)x10* ~ 7 = 0757 Ba Daily Practice Problems | CAREER POINT © scanned with OKEN scanner Q.7 A semiconductor X is made by doping a germanium crystal with arsenic (% = 33). A second semiconductor Y is made by doping germanium with indium (Z = 49). The two are joined end to end and connected to a battery as shown. Which ofthe following statements is correct (1) X is P-type, ¥ is N-type and the junetion is forward biased 2) X is Naype, Y is P-type and the junction is forward biased (8) X is P-type, ¥ is N-type and the junction is reverse biased (W Xia Naype, Y is P-type and the junction is reverse biased Q.8 —_Inareverse biased diode when the applied voltage changes by 1 V, the eurrent is found to change by 045 WA. The reverse bias resistance of the diode is (2x 100 @2x100 (@) 2000 (2a Q9 Ap—njunction diode contains a depletion layer () Only if tis unbinsed 2) Only if is forward biased (3) Only if itis reverse biased (4) Irrespective of whether itis biased or unbiased Q.10 The i-V charnctoristic of a P-N unction diode is shown below. The approximate dynamic resistance of the P-N junction when a forward bins of 2volt is applied 221 Vévolr aia 0.250 05a sa Answer & Solutions 122 3 40 5@ A) 7) «88 —_—«O) 1. In reverse biasing, width of depletion layer Y becomes P-type semiconductor. Also N increase (ie., X) is connected to positive terminal of 4. In forward biasing, resistance of PN junction battery and P(e., Y) is connected to negative diode is zero, so whole voltage appears across the resistance, Because N-side is more positive as compared to P-side. 0.5 Bao Arsenic has five valence electrons, so it a donor impurity. Hence X becomes N-type semiconductor. Indium has only three outer electrons, 80 it isan acceptor impurity. Hence terminal of battery so PN-junction is reverse biased. 8 Reverse resistance We} _ loxine, Al 0.8107 10. The current at 2V is 400 mA and at 2.1 V it is 800 mA. ‘The dynamic resistance in this region AV __@1-3___1 Lg 959 ‘Al (G00—400)x10-" 4 © scanned with OKEN scanner Semi Conductors & Electronics | DPP-3 Topics Covered : FE/RB characteristic, Application (as a Rectifier), PN junction application as solar cell, LED Q.1_ A half-wave rectifier ix being used to rectify an alternating voltage of frequency 50 Hz, The number of pulses of rectified current obtained in one second is a) 50 (2)25 (3) 100 (4) 200. Q.2 The peak voltage in the output of a half-wave diode rectifier fed with a sinusoidal signal without filter is 10 V. The de component of the output voltage is @ ey (2 ov @2v Bv. Q3__ Ifa full wave rectifier circuit is operating from 50 Hx mains, the fundamental frequency in the ripple will be (1) 25 He (2) 50 He (3) 70.7 He (4) 100 He, QA The diode used in the circuit shown in Figure has a constant voltage drop of 0.6 V at all currents and a maximum power rating of 100 milliwatt. What should be the value of the resistor R, connected in series with the diode, for obtaining maximum current? RosVv T 1.6 Lysy __| M152 50 (9) 6.670 (4) 2000 Q.5 Assuming thatthe junction diode is ideal, in the ercuit shown in figure, the current through the dnd is 199.0 +1V 2: Q) zero @ima (@)10mA (4) 30mA. Q.6 What is the current flowing in R, in the circuit shown in figure ? Given : R, = 500 Wand R, = 1 kQ. 10V ovr ee (2) 0 mA @)5mA (8) 10 mA. (4) 15 ma, | CAREER POINT | Physics g 3 8 © scanned with OKEN scanner Semi Conductors & Electronics | DPP-3 Topics Covered : FE/RB characteristic, Application (as a Rectifier), PN junction application as solar cell, LED Q.1_ A half-wave rectifier is being used to rectify an alternating voltage of frequency 50 Hz, The number of pulses of rectified current obtained in one second is a) 50 (2)25 (3) 100 (4) 200. Q.2 The peak voltage in the output of a half-wave diode rectifier fed with a sinusoidal signal without filter is 10 V. The de component of the output voltage is «ey (wv @2v BV. Q3__ Ifa full wave rectifier circuit is operating from 50 Hx mains, the fundamental frequency in the ripple will be (1) 25 He (2) 50 He (3) 70.7 He (4) 100 He, QA The diode used in the circuit shown in Figure has a constant voltage drop of 0.6 V at all currents and a maximum power rating of 100 milliwatt. What should be the value of the resistor R, connected in series with the diode, for obtaining maximum current? Rog T 1.6 Lysy __] M162 50 (96670 (4) 2000 Q.5 Assuming thatthe junction diode is ideal, in the eircuit shown in figure, the current through the dnd is 109.0 +1v 2: Q) 2er0 @ima (@)10mA (4) 30 mA. Q.6 Whats the current flowing in R, in the circuit shown in figure ? Given : R, = 500 Wand R, = 1 kQ. Ry 10V ovr ee (2) 0 mA 5 mA (8) 10 mA, (4) 15 ma, © scanned with OKEN scanner Qz Qs Qs Q.10 Qu Quiz A sinusoidal voltage of peak value 200 volt is connected to a diode and resistor R in the cireuit shown so that half wave rectification occurs, If the forward resistance of the diode is negligible compared to R the rms voltage (in volt) across R is approximately. ogy Eo = 200 volt R 200 1) 200 100 @) (4) 280, J z ‘The voltage gain of the following amplifier is 100kQ, 1k pt vi fina (10 (2) 100 (8) 1000 99 In the cireuit given the current through the zener diode is 4 Rig 500kKQ 15009: pe * Vi=10V ) 5 mA () 3.83 mA 15; () 10 mA (2) 6.67 mA A zener diode, having breakdown voltage equal to 15 V, is used in a voltage regulator circuit shown in figure. The current through the diode is ; ms ov Ky “gio (2) 20 mA @5mA (3) 10 mA, (4) 15 mA A p-n photodiode is made of a material with a band gap of 2.0 eV. The minimum frequency of the radiation that can be absorbed by the material is nearly () 1 104 He, (2) 20 104 Hz (8) 10 10" Hz (4) 5104 Hz, ‘The energy of radiation emitted by LED is (1) Greater than the band gap of the semiconductor used (2) Always less than the band gap of the semiconductor used (3) Always equal to the band gap of the semiconductor used (4) Equal to or loss than the band gap of the semiconductor used Daily Practice Problems | CAREER POINT © scanned with OKEN scanner Qz Qs Qs Q.10 Qu Quiz A sinusoidal voltage of peak value 200 volt is connected to a diode and resistor Rin the circuit shown so that half wave rectification occurs. If the forward resistance of the diode is negligible compared to R the rms voltage (in volt) across R is approximately ogy Eo = 200 volt R 200 (1) 200 100 @) (4) 280, u z ‘The voltage gain of the following amplifier is 100kQ. 1k pt vi foo (10 (2) 100 (8) 1000 aoo In the cireuit given the current through the zener diode is 4 Rig 500kQ 15009: pe * Vi=10V ) 5 mA () 3.83 mA 15; () 10 mA (2) 6.67 mA A zener diode, having breakdown voltage equal to 15 V, is used in a voltage regulator circuit shown in figure. The current through the diode is ; i av Ky “gio (2) 20 mA @5mA (3) 10 mA, 4) 15 mA A p-n photodiode is made of a material with a band gap of 2.0 eV. The minimum frequency of the radiation that can be absorbed by the material is nearly () 1 104 He, (2) 20 104 Hz (8) 10 10" Hz (4) 5104 Hz, ‘The energy of radiation emitted by LED is (1) Greater than the band gap of the semiconductor used (2) Always less than the band gap of the semiconductor used (3) Always equal to the band gap of the semiconductor used (4) Equal to or loss than the band gap of the semiconductor used © scanned with OKEN scanner Q13 Qua Ge and Si diodes conduct at 0.3 V and 0.7 V respectively. In the following figure if Ge diode connection is reversed, the value of Vp changes by Ge Dt Vo ve i a 1002 (o2Vv @oav 06V, 08v ‘The junction diode in the following circuit requires a minimum current of 1 mA to be above the knee point (0.7 V) of its I-V characteristic curve, The voltage across the diode is independent of current above the knee point. If V, = 5 V, then the maximum value of R so that the voltage is above the knee will be o7V "Be et (1) 4.3kQ (2) 860 kQ (34.32 (4) 8600 Q.15 A junction diode has a resistance Q when forward biased and 2500 © when reverse biased, The current in the diode, for the arrangement shown will be BY 100 OV py RO} 1 1 1 1 maa @ tA Oz Op Q.16 Assuming the diodes to be of silicon with forward resistance zero, the current | in the following cireuit is ao (2) 9.65 mA (3) 10 mA. (4) 10.36 mA CAREER POINT | Physics 395 © scanned with OKEN scanner Q13 Qua Qs Q16 Ge and Si diodes conduct at 0.3 V and 0.7 V respectively. In the following figure if Ge diode connection is reversed, the value of Vp changes by Ge Dt Vo ve i a 1002 (ov @04Vv (06V, w08v ‘The junction diode in the following circuit requires a minimum current of 1 mA ta be above tho knee point (0.7 V) of its I-V characteristic curve, The voltage across the diode is independent of current above the knee point. If V, = 5 V, then the maximum value of R so that the voltage is above the knee will be o7V "Be a () 43k (2) 860 ko (439 (4) 8609 A junction diode has a resistance of 25 © when forward biased and 2500 9 when reverse biased, The current in the diode, for the arrangement shown will be By 109 ov op 1 1 1 1 A @ 7A Ox Ops Assuming the diodes to be of silicon with forward resistance zero, the current | in the following cireuit is ao (2) 9.65 mA (3) 10 mA (4) 10.36 mA © scanned with OKEN scanner Answer & Solutions 1) 2) 34) 4.2) SA MG) 124) 13.2) 4) 18.2) 6.(2) 7.2) 8.2) 94) 10.2) 16.3) a ee3 3. In a full wave rectifier, the fundamental frequency is ripple is twice of input frequency. 10010" 05 A=02A 1 =5 03° ® 5. The diode is reverse-biased. So, current is zero. 6. Voltage across R, = 5V oa Lao 1=5x109A=5 mA. ‘The voltage drop across R, is Vp, =Vz=10V ‘The current through R, is _ Ya, _ 10 7 e102. I, = = yong 70867 * 108A = 6.67 109A=6.67 mA ‘The voltage drop across R, is 396 i Vy, = 15V— Vy, = 15V-10V ‘The current through R, is ¥ 5 Tp, = 2 = R, 5009 =102A=10x10%A=10mA The current through the zener diode is 1, = Tp, ~ Tn, = (10 -6.67)mA = 3.33mA 10. Voltage across zener diode is constant, 2502 i juke 20v ks 15mA (20-15)V _ _5V 20 omy = SO=IV = OY = 20 2 29 aad 2502 2502 1000 mA igenednde = (20 18) =5 mA. An y= RPh = 20X10" 4 gy gute 66x10 * 12. The energy emitted by LED is equal to or less than the band gap, becatise one has also two other energy bands due to the acceptor and donor levels just above Fy and just below By. 13. Consider the case when Ge and Si diodes are connected as show in the given figure. Equivalent voltage drop across the combination Ge and Si diode = 0.3 V Daily Practice Problems | CAREER POINT © scanned with OKEN scanner Answer & Solutions ty 2D 3.4) 4.2) 541) 14) 124) 132) 4.1) 15.2) 6.(2) 7.02) 8.2) 94) 10.2) 16.3) a eeF 3. In a full wave rectifier, the fundamental frequency is ripple is twice of input frequency. 100%10- 05 A=02A 1 =5 03° ® 5. The diode is reverse-biased. So, current is zero. 6. Voltage across R = 5V oa 1a® 1=5x109A=5 mA. ‘The voltage drop across R, is Vp, =Vz=10V ‘The current through R, is _ Ya, _ 10 7102: Ta, = = yong 72867 * 108A =6.67x109A=6.67 mA ‘The voltage drop across R, is Vy, = 15V— Vp, = 15V-10V ‘The current through R, is Ya 5) 1 = 4a = R, 5008 =102A=10*10-A=10mA The current through the zener diode is 1, = Ip, ~ Tq, = (10 -6.67)mA = 3.33mA 10. Voltage across zener diode is constant, 2502 i juke 20v ks 15mA (20-15)V _ _5V 20 omy = POZO = OY = 20 2 29 a 2502 2502 1000 mA iseneande “(20 18) =5 mA. 1, y= rh = 201610" = 4 gy gute 66x10 % 12. The energy emitted by LED is equal to or less than the band gap, becatise one has also two other energy bands due to the acceptor and donor levels just above Fy and just below By. 13. Consider the case when Ge and Si diodes are connected as show in the given figure. Equivalent voltage drop across the combination Ge and Si diode = 0.3 V © scanned with OKEN scanner => Current 2.34 mA oka Out put voltage V)= Ri KQx 2.81 mA= LTV ‘Now consider the ease when diode connection are roversed. In this case voltage drop across the diode's combination = 0.7 V 1207 <2.96mA = Current i= 5k Vo =iR= 2.26 mA x 5k 13V 14, At knee point voltage across the diode is 0.7V. Hence voltage across resistance Ris5-07 => using V 3 43=1x109%R => R=4.9k0. CAREER POINT | Physics 15. For forward bias, 20008 397 © scanned with OKEN scanner 4. => Current 2.34 mA oka Out put voltage V)= Ri KQx 2381 mA= LTV ‘Now consider the ease when diode connection are roversed. In this case voltage drop across the diode's combination = 0.7 V 12707 <226mA => Current i= BEN Vo =iR= 2.26 mA 5k2 13V At knee point voltage across the diode is 0.7V. Hence voltage across resistance Ris5-07 = using V 3 43=1x109%R => R=4.3k0. 15. For forward bias, 20008 © scanned with OKEN scanner Semi Conductors & Electronics | DPP-5 Topics Covered : Logic gate Qi Qe Qs Qa Qs Qs Qr Identity the GATE in he Figure: D5 5] L, 5 (OR (2) EX-OR (3) NOR, (@) NAND Refer to the circuit shown in Figure. What inputs X and Y will produce a high output at R? xT aa, . Do, rr Ly, -O— ()X=0,Y=0 ()X=1,Y=1 (3) X=0, Y= @)X=1,Y=0. How many NAND gates are required to make an OR gate? Ms (4 (3) 5 a6 Tdentify the Gate in Figure : @) AND @ XoR () NOR (4) NAND What is the Boolean equation for the logic gate shown? PI QY=A+B @yY= +B @Y=sK+B Which of the following is () A.B =A+B (A+B @ (3) @.B). (A.B) =AB+AB (4) T+T ‘The dingram shows a logic network. NAND ‘NOT NAND Which single gate is equivalent to the network? (2) AND (@) NAND. (NOR (@) EX-OR Daily Practice Problems | CAREER POINT © scanned with OKEN scanner Semi Conductors & Electronics | DPP-5 Topics Covered : Logic gate Qi Qe Qs Qa Qs Qs Qr Identity the GATE in he Figure: D5 5 L, 5 (OR (2) EX-OR (3) NOR, (@) NAND Refer to the circuit shown in Figure. What inputs X and Y will produce a high output at R? xT aa, . Do, oT Ly, -o— ()X=0,Y=0 ()X=1,Y=1 (3) X=0, Y= @)X=1,Y=0. How many NAND gates are required to make an OR gate? Ms (4 (3)5 a6 Tdentify the Gate in Figure : @) AND (@ XoR () NOR (4) NAND What is the Boolean equation for the logic gate shown? PI QY=A+B @yY= Which of the following is () A.B A+B (A+B @ +B @Y2K+B (3) A.B). (A.B) =AB+AB (4) T+T ‘The dingram shows a logic network. NAND ‘NOT NAND Which single gate is equivalent to the network? (2) AND (@) NAND. (NOR (@) EX-OR © scanned with OKEN scanner Q.8 How many NAND gates are required to get a half adder? m3 5 oo wr Q9 Thetruth table A [BUY 0 [00 oh 1 [ofr Lita infor (1) OR gate (2) AND gate (3) NOT gate (4) NOR gate Q.10 A combination of logic gates has the truth table below. . o 0 1 i Which combination has this table? Nor P. OR P+ > ® De @e =e] q—_Jnaxp oT Pp NAND > @ cf. RDy ® be nor! NAND’ e MAND Nor Q.11 Figure shows a combination of logic gates. ‘To what single gate is this combination equivalent? (1) EX-NOR, (2) NOR (3) EX-OR @) oR Q.12 The diagram shows a logic network. 141] NAND —__p Lx @ AND Near OR If the inputs L, M and N are all at logic 1, what are the logie states of P, Q and R? PQ R ag o 1 1 @ 0 0 1 @) 0 Oo o @M io. oO o CAREER POINT | Physics 401 © scanned with OKEN scanner Qs Qs Q.10 Qu Que How many NAND gates are required to get a half adder? a3 Qs (39 a7 ‘The truth table A [BUY [oo ohh pot bot) hie (1) OR gate (2) AND gate (3) NOT gate (4) NOR gate Acombination of logic gates has the truth table below. P oO 0. 1 1 Which combination has this table? Nor P. OR P. o Lo, @ ef om, NO? NAND NAND Qa P. NAND nov! NAND’ Figure shows a combination of logic gates. Input =n to ‘To what single gate is this combination equivalent? T P. @ — te @ NAND Nor (1) EX-NOR, (2) NOR (3) EX-OR @)OR ‘The diagram shows a logic network. Tet] Nap Lz Q ‘AND MI OR Ifthe inputs L, Mand N are all at logic 1, what are the logic states of P, Q and R? PQ R @ o 1 1 @ 0 0 1 @ 0 0 0 M4 0 0 © scanned with OKEN scanner Answer & Solutions 1.) 24) 3.2) 44) 5.3) 11.) 12.2) 1. pis Dp or K+AB > BABor B+A.B Clearly, the given combination performs the operation of EX-OR gate. 2X Y: YY) =le[=le] = Sle I= al 3. Three NAND gates are required to make an OR gate. An additional NAND gate is required to make a NOR Gate, 6. () A+B=A.B=A.B (c) (A-B).(A.B) =A.B+A.B=AB+AB (d) 0+0=0 Clearly, (4) is incorrect i A.D) A.|A+A| BHA | BI .B .B olo{ilfijo 1 ito} ofifi foto 1 0 a} Tfofotiyo | _o 1 tifoftofrt 4 1 To 644) a (4) x (2) 7. &___NAND NOT. on a ‘NoT NAND ‘The truth table far the logic networks is stated below. x y Q Q Qs 0 a i oO 0 0 1 1 1 1 1 0 1 1 1 1 1 0 1 0 From the tabla, itis clear that EX-OR gate i equivalent to this network. 8 To get n half adder, we require one AND gate and one XOK (also called HOR) gate. For 1 AND gate, 2 NAND gates are required, For 1 XOR gate, 5 NAND gatos are required. So, a total of 7 NAND gates are required for making a half adder. 10. ‘Truc tables for cases in A, B, C and D are xiven below. a 0 0 1 1 The combination of logic gates can be replaced by a single EX-OR gate. R LIMINTX]y[P[QTR 1lililolilolo Daily Practice Problems | CAREER POINT © scanned with OKEN scanner Answer & Solutions LQ) 244) 3.2) 44) 5.3) 6.4) 74) a4) 9 0.(2) 11.G) 12.2) = 7X NAND 1 LOADD or ean SO , ¥ Nor wore, ~— pal Ds 'NoT NAND BABor B+AB ‘The truth table for the loge network is stated below. AD) tho A.[A+A| BHA | 0 T T L T B -B_| .B L 0 1 1 1 ofofistiyo 1 1 of T T o 1 0 ofififoto 1 o fay From the table, it is clear that EX-OR gate i a 0 1 1 equivalent to this network. tifoftofryt 4 1 To Glenrly, the given combination performs the 8. To got a half adder, we require one AND gato ‘operation of EX-OR gate. and one XOR (also called EOR) gato, For 1 x AND gate, 2 NAND gates are required. For 1 2X XOR gate, 5 NAND gatos are required. So, a y total of 7 NAND gatos are required for making half adder. 10, True tables for cases in A, B, C and D are given below. X{Y[X YH K+ ¥) ofotr oft 1 fo fo 11 fo 3. Three NAND gates are required to make an x Tre MND gio ert ett me Pay make a NOR Gate. x 0 4. o 1 L ‘The combination of logic gates can be replaced 6 by a single EX-OR gate. @) A+B=A.B=A.B (©) (A-B).(A.B) =A.B+A.B=AB+AB @ 0+0=0 Clearly, (4) is incorreet 2 Lays afita ¥ 1 x o =|3| =f] © scanned with OKEN scanner

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