Archive of SID

Effects of CT and VT Connection Point on Distance Protection

of Transmission Lines with FACTS Devices

H. Shateri* and S. Jamali*

Abstract: This paper presents the effects of instrument transformers connection points on
the measured impedance by distance relays in the presence of Flexible Alternating Current
Transmission System (FACTS) devices with series connected branch. Distance relay
tripping characteristic itself depends on the power system structural conditions, pre-fault
operational conditions, and especially the ground fault resistance. The structural and
controlling parameters of FACTS devices as well as the connection points of instrument
transformers affect the ideal tripping characteristic of distance relay. This paper presents a
general set of equations to evaluate the measured impedance at the relaying point for a
general model of FACTS devices to consider different affecting parameters.

Keywords: Distance protection, Fault resistance, FACTS devices, Tripping characteristic.

1 Introduction1 devices on the protective systems, especially the

The measured impedance at the relaying point is the distance protection, which is the main protective device
basis of the distance protection operation. There are at UHV, EHV, and HV levels.
several factors affecting the measured impedance at the Unlike power system parameters, the structural and
relaying point. Some of these factors are related to the controlling parameters of FACTS devices could affect
power system parameters prior to the fault instance, the measured impedance even in the absence of the fault
which can be categorized into two groups. First group is resistance. In the presence of FACTS devices, the
the structural conditions, while the second group is the conventional distance characteristic such as Mho and
operational conditions [1-3]. In addition to the power Quadrilateral are greatly subjected to mal-operation in
system parameters, the fault resistance, in the single- the form of over-reaching or under-reaching the fault
phase to ground faults, could greatly influence the point.
measured impedance, in such a way that for zero fault Regarding the high levels of currents and voltages in the
resistance, the power system parameters do not affect UHV, EHV, and HV systems, it is essential to provide
the measured impedance. In other words, power system the current and voltage signals for the protective system
parameters affect the measured impedance only in the via the instrument transformers. In the presence of
presence of the fault resistance, and as the fault FACTS devices at the near end of the line, the
resistance increases, the impact of power system connection points of the Voltage Transformers (VT)
parameters becomes more severe. and/or the Current Transformer (CT) can be either
In the recent years FACTS devices are introduced to the behind or in front of these devices. As the connection
power systems to increase the transmitting capacity of points changes, considerable variations in the measured
the lines and provide the optimum utilization of the impedance could be resulted.
system capability. This is done by pushing the power Reference [4] has presented the measured impedance at
systems to their limits. It is well documented in the the relaying point in the presence of UPFC on a single
literature that the introduction of FACTS devices in circuit line, and [5] has presented the measured
power systems has a great influence on their dynamics. impedance in the presence of series connected FACTS
As power system dynamics changes, many sub-systems devices (TCSC, TCPST, and UPFC) on a double circuit
are affected, including the protective systems. line. The importance of instrument transformers
Therefore, it is essential to study effects of FACTS connection points on distance relays performance has
been mentioned in [6-7] for TCSC and in [8] for UPFC.
Iranian Journal of Electrical & Electronic Engineering, 2006.
References [6-8] has discussed the effect of FACTS
* The authors are with the Center of Excellence for Power Systems devices by means of simulation or simple symbolic
Automation and Operation, Department of Electrical Engineering, equations, and unlike [4-5] has not presented the
Iran University of Science and Technology, Narmak, Tehran 16846, detailed accurate equations. The effects of the
Iran.
E-mail: [email protected], [email protected]. instrument transformers connection points have been

131 Iranian Journal of Electrical & Electronic Engineering, Vol. 2, Nos. 3 & www.SID.ir
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studied for TCSC in [9], for UPFC in [10], and for impedance. This impedance represents the impedance of
SSSC in [11] by means of presenting the measured SSSC coupling transformer.
impedance at the relaying point in the case of the When the energy source only has the ability of
various instrument transformers connection points. In maintaining the dc voltage and supplying the losses,
[9-11] the effects of the instrument transformers SSSC only could compensate the reactive power. In this
connection points have been presented for each device case the magnitude of injected voltage can be controlled
individually. This paper intends to study the effects of due to compensation strategy, but the phase angle of the
the instrument transformers connection points generally injected voltage would be perpendicular to the line
by means of considering the general model for all of the current. The injected voltage could either lead or lag the
concerning FACTS devices and presenting the line current by 90°.
generalized equations for the measured impedance.
The measured impedance at the relaying point in the 2.3 TCPST
presence of FACTS devices with series connected Thyristor Controlled Phase Shifter Transformer
branch, including TCSC, SSSC, TCPST, UPFC, at the (TCPST) consists of two transformers, magnetizing and
near end of the line for different distance relay booster transformers, which are connected through a
instrument transformers connection points. This is done thyristor switching device [7,12]. Magnetizing
by presenting the general equations set for the general transformer is the shunt connected transformer while the
model of FACTS devices. Regarding the presented booster transformer is connected in series with the
measured impedance and the tripping characteristic, it transmission line. The injected voltage via the booster
can be seen how much a distance relay is sensitive to its transformer is perpendicular to the input voltage of
instrument transformers connection points in the TCPST.
presence of FACTS devices with series branch at the The equivalent circuit of TCPST is shown in Fig. 3.
near end of the line. This model consists of two branches, a shunt and a
series branch. The shunt branch is related to the
2 Modeling FACTS Devices magnetizing transformer, which is presented by the
As mentioned, FACTS devices with series connected magnetizing transformer impedance, ZSh, and its
branch, including TCSC, SSSC, TCPST, UPFC, are voltage, ESh. The series branch is corresponding to the
studied here. The model of each of these devices and the boosting transformer, which is represented by the
general model for these devices are presented in this booster transformer impedance, ZSe, and its series
section. injected voltage re jθ Vi.
The parameters of the series branch, r and θ, could be
2.1 TCSC represented according to the phase angle shifting, φ, as:
Thyristor Controlled Series Compensator (TCSC)
consists of a fixed capacitor in parallel with a thyristor
controlled reactor [7,12]. TCSC can be controlled by r = tan( ϕ ) (2)
adjusting the conducting duration of the reactor. TCSC
can be modeled as a variable reactance, capacitive or θ = sign (ϕ) π / 2 (3)
inductive, regarding the conducting duration of the
thyristors, the inductance of the rector, and the ZTCSC
capacitance of the capacitor, as it is shown in Fig. 1.
The reactance of TCSC is usually defined as the per unit Fig. 1 Equivalent circuit (model) of TCSC.
of the positive sequence impedance of the transmission
line, which is given as TCSC compensation degree, KC,
as below:
Vin re jγ ZSSSC
Vin _ + Vout
Z TCSC = − j K C X1L (1)
Fig. 2 Equivalent circuit (model) of SSSC.

2.2 SSSC
ESe= re jθ Vi
Static Synchronous Series Compensator (SSSC) is Vi ZSe Vo
placed in the group of series connected FACTS devices.
SSSC consists of a voltage source inverter connected in
ZSh
series via a coupling transformer to the transmission
line. A source of energy is required for providing and
maintaining the dc voltage across the dc capacitor and ESh
compensation of SSSC losses [12].
Figure 2 shows the model of SSSC which consists of a
series connected voltage source in series with an Fig. 3 Equivalent circuit (model) of TCPST.

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2.4 UPFC In the case of a non-zero fault resistance, the measured
Unified Power Flow Controller (UPFC) consists of two impedance is not equal to the impedance of the line
converters, series and shunt connected converters to the section located between the relaying and fault points. In
transmission line, which have a common dc link via a this case, the structural and operational conditions of the
dc storage capacitor [8,12]. The shunt connected power system affect the measured impedance. The
converter inject or absorb the reactive power and structural conditions are evaluated by the short circuit
provide the required active power of the series levels at the line ends, SSA and SSB. The operational
converter. The series connected converter injects a conditions prior to the fault instance can be represented
variable voltage, in the form of both variable magnitude by the load angle of the line, δ, and the ratio of the
and phase angle. These converters are operating voltage magnitude at the line ends, h, or in general
independently from the reactive power point of view, EB / EA = he -jδ. In the absence of FACTS devices and
but the required active power of series connected with respect to Fig. 4 and Fig. 5, the measured
converter, and the losses of both converters and storage impedance can be expressed by the following equations.
capacitor, is provided via the shunt connected converter. More detailed calculations can be found in [2].
The equivalent circuit of UPFC is the same as that is
shown in Fig. 3, which consists of two branches, a shunt A B
Z1SA p Z1L F (1-p) Z1L Z1SB
and a series branch, the same as TCPST. The shunt
branch is related to the shunt connected converter, EA ~ ~ EB
which is presented by the impedance ZSh and the voltage
source ESh. The series branch is corresponding to the
series connected converter; and is represented by the Z2SA p Z2L (1-p) Z2L Z2SB
impedance ZSe and the voltage source re jθ Vi. 3Rf

2.5 General Model

The model of Fig. 3 could be utilized as the general
Z0SA p Z0L (1-p) Z0L Z0SB
model for FACTS devices. The model of TCPST and
UPFC are just the same as Fig. 3. In the case of SSSC, if
the impedance of the shunt branch becomes infinite, the
model of SSSC would be resulted. For TCSC, if the
impedance of the shunt branch becomes infinite and r Fig. 5 Equivalent circuit of phase A to ground fault.
becomes zero, the model of TCSC would be the result.
The parameters of the general model for each of FACTS
devices are presented in Table 1. Z1A = Z1SA + p Z1L (4)

Table 1 General model for FACTS devices. Z1B = Z1SB + (1 − p) Z1L (5)
ZSh ESh ZSe r θ
TCSC ∞ -- ZTCSC 0 --
SSSC ∞ -- ZSSSC r θ Z0 A = Z0SA + p Z0 L (6)
TCPST ZSh ESh ZSe r θ
UPFC ZSh ESh ZSe r θ
Z0 B = Z0SB + (1 − p) Z0 L (7)
3 Measured Impedance at Relaying Point
Distance relays operate based on the measured Z1A Z1B Z Z
ZΣ = 2 + 0A 0 B (8)
impedance at the relaying point. In the absence of Z1A + Z1B Z0 A + Z0 B
FACTS devices and for zero fault resistance, the
measured impedance by a distance relay only depends
Z1B
on the length of the line section between the fault and C1 = (9)
the relaying points. In Fig. 4 this impedance is equal to Z1A + Z1B
pZ1L, where p is per unit length of the line section lied
between the fault and the relaying points, and Z1L is the Z0 B
line positive sequence impedance in ohms. C0 = (10)
Z0 A + Z0 B
EA A B EB
Z1SA p Z1L F (1-p) Z1L Z1SB
~ ~ Z0 L − Z1L
K 0L = (11)
3Z1L
Rf

1 − h e − jδ
K ld = (12)
Fig. 4 Equivalent circuit for single phase to ground fault. Z1A h e − jδ + Z1B

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Once FACTS devices are installed at the near end of the
Cld = ( ZΣ + 3R f )K ld (13) line, (4), (6), (12), and (13) should be modified and
some new equations are introduced:
3R f
ZA = p Z1L + (14)
C ld + 2C1 + C 0 (1 + 3K 0 L ) ZSe
C1S = (15)
Z1L
It can be seen for zero fault resistance, the measured
impedance at the relaying point is the impedance of the ZSe
line section between the relaying and the fault points. C 0S = (16)
Z0 L
The power system conditions only affect the measured
impedance in the presence of the fault resistance.
In the presence of FACTS devices at the near end of the Z1AI = Z1SA (17)
line, as shown in Fig. 6, four different cases could be
considered due to the CT and VT connection points. Z1AF = (p + C1S ) Z1L (18)
A FACTS Device
CT Z1BF = Z1SB + (1 − p) Z1L (19)

Z1BI = Z1SB + (1 + C1S ) Z1L (20)

VT

Z0 AI = Z0SA (21)

Z0 AF = (p + C0S ) Z0 L (22)
a) VT behind, CT behind FACTS device

A FACTS Device ZSh Z1AI

Z1A = Z1AF + (23)
CT ZSh + Z1AI

ZSh Z0 AI
VT Z0 A = Z0 AF + (24)
ZSh + Z0 AI

ZSh
C1A = (25)
ZSh + Z1AI
b) VT behind, CT in front of FACTS device

A FACTS Device ZSh

C0A = (26)
CT ZSh + Z0 AI

Den = Z1AI [ Z1AFhe− jδ + Z1BF (1 + re jθ )E Sh ]

VT
[ Z1AI (1 + re jθ ) + Z1AF ]he− jδ  (27)
+ ZSh  jθ

+ Z1BF (1 + re ) 

c) VT in front of, CT behind FACTS device K ld ∆ = Z1AI[(1 + re jθ )ESh − he− jδ ]

(28)
− Z1BI [1 − E Sh ]
A FACTS Device
CT
C ld ∆ = ( ZΣ + 3R f )K ld ∆ / Den (29)

VT Cld + 2C1 (1 − C1A ) 

CSh = Z1AF  ∆  (30)
+ C 0 (1 − C 0 A )(1 + 3K 0 L )

C ZSe = (C0S − C1S )(1 + 3K 0 L )C 0 Z1L (31)

d) VT in front of, CT in front of FACTS device
Fig. 6 Various CT and VT connection points.

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4 Distance Relay Ideal Tripping Characteristic in
K VSe = Z1AI Z1BI ESh + ZSh [ Z1AIhe − jδ + Z1BI ] (32) Presence of TCSC
The impacts of the installation of TCSC on a
C VSe = −( ZΣ + 3R f )K VSe re jθ / Den (33) transmission line have been tested for a practical
system. A 400 kV Iranian transmission line with the
length of 300 km has been used for this study. The
K ld b = Z1BI [1 − ESh ] + ZSh [1 + re jθ − he − jδ ] (34) structure of this line is shown in [13]. By utilizing the
Electro-Magnetic Transient Program (EMTP) [14]
C ld b = ( ZΣ + 3R f )K ld b / Den various sequence impedances of the line are evaluated
(35)
according to its physical dimensions. The calculated
impedances and the other parameters of the system are:
K ld f = Z1AI [(1 + re jθ )ESh − he − jδ ] Z1L = 0.01133 + j 0.3037 Ω/km
(36) Z0L = 0.1535 + j 1.1478 Ω/km
+ ZSh [1 + re jθ − he− jδ ]
Z1SA = 0.6972 + j 7.9696 Ω
Z0SA = 3.1058 + j 11.5911 Ω
Cld f = ( ZΣ + 3R f )K ld b / Den (37) Z1SB = 1.3945 + j 15.9391 Ω
Z0SB = 6.2117 + j 23.1822 Ω
h = 0.96
Depending on the instrument transformers connection
δ = 16º
points, (14) should be modified.
In the absence of FACTS devices, Fig. 7 shows the ideal
In the case of VT behind and CT behind the device:
tripping characteristic of the distance relay which is the
measured impedance at the relaying point as the fault
ZA = (p + C1S ) Z1L resistance varies from 0 to 200 ohms, while the fault
CSh + C ZSe + CVSe + 3R f location changes from the relaying point up to the far
(38)
+ end of the transmission line.
Cld b + 2C1C1A + C0C0 A (1 + 3K 0 L ) Due to the absence of the shunt branch in TCSC, the
connection point of CT is not important from measured
impedance point of view. Therefore, four mentioned
In the case of VT behind and CT in front of the device:
cases are reduced into two cases. Here, two cases of VT
behind and in front of TCSC are studied.
C Z Se + C VSe + 3R f
ZA = (p + C1S ) Z1L + (39) 4.1 VT behind TCSC
Cld f + 2C1 + C0 (1 + 3K 0 L )
In the case of TCSC, due to the absence of the shunt
branch or infinite ZSh, coefficients C1A and C0A are equal
In the case of VT in front of and CT behind the device: to 1; and Cldf and Cldb are equal and they are represented
with Cld. On the other hand, series voltage source is
zero; therefore, both (38) and (39) are simplified as:
CSh + 3R f
ZA = p Z1L + (40)
Cld b + 2C1C1A + C0 C0 A (1 + 3K 0 L )
C Z Se + 3R f
ZA = (p + C1S ) Z1L + (42)
Cld + 2C1 + C0 (1 + 3K 0 L )
In the case of VT in front of and CT in front of the
device:
100

90
3R f
ZA = p Z1L + (41) 80
Cld f + 2C1 + C0 (1 + 3K 0 L ) 70
Reactance, X (Ohms)

60

Since (38) to (41) are calculated based on the general 50

model of FACTS devices, these equations could be used 40

for each of the mentioned FACTS devices. 30

As mentioned, TCPST injects a series voltage which is 20
perpendicular to its input voltage and it leads or lags the
10
input voltage. On the other hand, UPFC injects a series
0
voltage with the variable magnitude and phase angle. 0 50 100 150 200 250 300
Resistance, R (Ohms)
Therefore, studies about UPFC will cover cases
concerning with TCPST. So here TCPST has not be Fig. 7 Distance relay tripping characteristic; without FACTS
devices.
studied individually.

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The effect of an inactive TCSC presence on the line In this case, like the previous case, it can be seen that as
could be seen in Fig. 7. Here, the compensation degree the compensation degree increases, the measured
is zero and TCSC does not inject or absorb any reactive resistance decreases, otherwise, in the case of TCSC in
power. It can be seen that inactive TCSC does not affect the inductive mode the measured resistance increases.
the measured impedance at the relaying point. As the compensation degree increases, the measured
Figure 8 shows the impact of TCSC compensation reactance does not vary considerably, in both inductive
degree variation on the measured impedance at the and capacitive modes. In this case, as the compensation
relaying point. Here, KC takes the values 0.3, 0.2, 0.1, degree increases, the tripping characteristic approaches
0.0, and –0.1. The negative value of compensation the reactance axis (shrinks), on the other hand for the
degree represents the inductive mode of TCSC. inductive compensation, the tripping characteristic
It can be seen that as the compensation degree increases, expands and the measured impedance deviates more
the measured resistance decreases, otherwise, in the than the case without TCSC installation on the line.
inductive mode the measured resistance increases. On
the other hand, as the compensation degree increases, 5 Distance Relay Ideal Tripping Characteristic in
the tripping characteristic transfers downwards, and in Presence of SSSC
the inductive mode the tripping characteristic transfers Due to the absence of the shunt branch in SSSC, the
upwards. The magnitude of the tipping characteristic same as TCSC, the connection point of CT is not
transfer is proportional to TCSC equivalent reactance. important. Therefore, two cases of VT behind and in
As the compensation degree increases, the tripping front of SSSC are studied.
characteristic shrinks horizontally and transfers
downwards. 5.1 VT behind SSSC
In the case of SSSC, due to the absence of shunt branch,
4.2 VT in front of TCSC unit C1A and C0A, and equality of Cldf and Cldb to Cld,
In the case of TCSC, due to the absence of shunt both (38) and (39) are simplified as:
branch, unit C1A and C0A, equality of Cldf and Cldb to Cld,
and the absence of series voltage source, both (40) and
C Z Se + C VSe + 3R f
(41) are simplified as: ZA = (p + C1S ) Z1L + (44)
Cld + 2C1 + C0 (1 + 3K 0 L )

3R f
ZA = p Z1L + (43) Figure 10 shows the effect of an inactive SSSC presence
Cld + 2C1 + C0 (1 + 3K 0 L )
on the line. Here, injected voltage of SSSC is zero and it
does not inject or absorb any reactive power. The
The effect of an inactive TCSC presence on the line tripping characteristic without SSSC is also shown in
could be seen in Fig 7. It can be seen that inactive dotted form for comparison.
TCSC does not affect the measured impedance at the It can be seen that even in the case of an inactive SSSC,
relaying point. i.e. its injected voltage is zero, it would affect the
Figure 9 shows the impact of TCSC compensation measured impedance at the relaying point. This is due to
degree variation on the measured impedance at the the presence of the coupling transformer in series with
relaying point. Here, KC takes the values 0.3, 0.2, 0.1, the line. It can be seen that the tripping characteristic
0.0, and –0.1, the same as Fig. 8. expands slightly and transfers upward. The measured
resistance increases as well as the measured reactance.
100 100
( - 0.1 )
90 90
80 ( 0.0 ) ( 0.3 ) ( 0.2 ) ( 0.1 ) ( 0.0 )
80
( 0.1 ) ( - 0.1 )
70
( 0.2 ) 70
60
Reactance, X (Ohms)
Reactance, X (Ohms)

( 0.3 )
60
50

40 50

30 40
20
30
10
20
0
10
-10

-20 0
0 50 100 150 200 250 300 350 0 50 100 150 200 250 300 350
Resistance, R (Ohms) Resistance, R (Ohms)

Fig. 8 Distance relay tripping characteristic variation; VT Fig. 9 Distance relay tripping characteristic variation; VT in
behind TCSC. front of TCSC.

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zero fault resistance, the measured impedance is the
100
actual impedance of the line section between the
90
relaying and fault points.
80
Figure 13 shows the effect of SSSC voltage magnitude
70 variation on the measured impedance at the relaying
Reactance, X (Ohms)

60 point in the both leading and lagging modes. Here, r

50 takes the values of 0.00, 0.05, and 0.10. The tripping
40
characteristic without SSSC is also plotted in dotted
form.
30

20 140
( 0.10 Lag )
130
10
120

0 110 ( 0.05 Lag )

0 50 100 150 200 250 300
100
Resistance, R (Ohms)

Reactance, X (Ohms)
90
( 0.00 )
80
Fig. 10 Distance relay tripping characteristic; VT behind 70 ( 0.05 Lead )
60
SSSC, inactive SSSC. ( 0.10 Lead )
50
40
Figure 11 shows the effect of SSSC voltage magnitude 30
variation on the measured impedance in the both leading 20

and lagging modes. Here, r takes the values 0.00, 0.05, 10

0
and 0.10. The tripping characteristic without SSSC is 0 50 100 150 200 250 300 350 400
Resistance, R (Ohms)
also plotted in dotted form.
It can be seen that as the injected voltage increases in Fig. 11 Distance relay tripping characteristic variation; VT
the lagging mode, the measured resistance increases for behind SSSC.
the high fault resistances, while in the case of the low
fault resistances, the measured resistance decreases; for 100
zero fault resistance and high magnitudes of injected 90
voltage, the measured resistance becomes negative. On 80
the other hand, as the injected voltage increases, the
70
measured reactance also increases. The increase in the
Reactance, X (Ohms)

60
measured reactance becomes greater for the higher fault
resistances. Generally, it can be said that in the presence 50

of SSSC in the lagging mode at the near end of the 40

transmission line, the tripping characteristic expands 30

and turns in anticlockwise direction. 20

It can be seen that as the injected voltage increases in 10
the leading mode, the measured resistance changes
0
complicatedly, it decreases for the high fault resistances, 0 50 100 150 200 250 300
Resistance, R (Ohms)
while in the case of the low fault resistances, the
Fig. 12 Distance relay tripping characteristic; VT in front of
measured resistance increases. On the other hand, as the
SSSC, inactive SSSC.
injected voltage increases, the measured reactance
decreases. Generally, it can be said that in the presence
of SSSC in the leading mode at the near end of the 100

transmission line, the tripping characteristic shrinks and 90 ( 0.10 Lag )

turns in clockwise direction. 80

( 0.10 Lead )
70
Reactance, X (Ohms)

5.2 VT in front of SSSC 60

In the case of SSSC, due to the absence of shunt branch,
50
unit C1A and C0A, and equality of Cldf and Cldb to Cld,
40
both (40) and (41) are simplified as (43), the same as the
30
case of TCSC.
Figure 12 shows the effect of an inactive SSSC presence 20

on the line. It can be seen that even in the case of 10

inactive SSSC the measured impedance is affected due 0

0 50 100 150 200 250 300 350 400 450
to the presence of the coupling transformer in series Resistance, R (Ohms)

with the line. The measured resistance increases, while Fig. 13 Distance relay tripping characteristic variation; VT in
the measured reactance decreases slightly. In the case of front of SSSC.

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It can be seen that as the injected voltage increases in Figure 15 shows the effect of UPFC controlling
the lagging mode, the measured resistance increases. On parameters variation on the measured impedance. Due
the other hand, as the injected voltage increases, the to the various possible operational cases for UPFC, only
measured reactance also increases. The increase in the four operational cases are considered. Here, |ESh|, r, and
measured reactance becomes greater for the higher fault θ takes the values (1): (0.90,0.00,90), (2): (0.95,0.10,0),
resistances. In the case of zero fault resistance, the (3): (1.00,0.05,90), and (4): (1.05,0.10, –90).
measured impedance is the actual impedance of the line It can be seen that as the controlling parameters of
section between the relaying and fault points. Generally, UPFC are varied, the tripping characteristic varies
it can be said that the tripping characteristic expands considerably. In the case of zero fault resistance, the
and no turning can be observed. It can be seen that as measured impedance is not equal to the impedance of
the injected voltage increases in the leading mode, the the line section between the relaying and fault points.
measured resistance decreases. On the other hand, as the
injected voltage increases, the measured reactance 6.2 VT behind, CT in front of UPFC
changes complicatedly, it increases for the faults near In the case of UPFC, (39) is the measured impedance at
the relaying point, but at the far end it increases for the the relaying point.
high fault resistances, while in the case of the low fault Figure 16 shows the effect of an inactive UPFC
resistances, it decreases. Generally, it can be said that in presence on the line. Here, injected voltage of the series
the presence of SSSC in the leading mode, the tripping branch is zero.
characteristic shrinks and no turning could be observed. It can be seen that in the presence of an inactive UPFC,
both the measured resistance and reactance increase
6 Distance Relay Ideal Tripping Characteristic in slightly. The tripping characteristic slightly transfers
Presence of UPFC upwards.
Due to the presence of the shunt branch in UPFC, unlike
the cases of TCSC and SSSC, the connection points of
both VT and CT are important. Therefore, four
240
mentioned cases are studied.
220 (2)
(1)
200
6.1 VT behind, CT behind UPFC
180 (3)
In the case of UPFC, (38) is the measured impedance at
160
Reactance, X (Ohms)

the relaying point. Figure 14 shows the effect of an

140
inactive UPFC presence on the line. Here, injected
120
voltage of the series branch is zero and it does not inject (4)
100
or absorb any reactive power. The tripping characteristic
80
without UPFC is also shown in dotted form.
60
It can be seen that in the presence of an inactive UPFC,
40
the measured resistance increases for the high fault
20
resistances, while in the case of the low fault
0
resistances, the measured resistance decreases; for zero 0 50 100 150 200 250 300 350 400 450
Resistance, R (Ohms)
fault resistance and high magnitudes of injected voltage,
the measured resistance becomes negative. On the other Fig. 15 Distance relay tripping characteristic variation; VT
hand, the measured reactance increases. The tripping behind, CT behind UPFC.
characteristic slightly transfers upward.

100
200
90
180
80
160
70
140
Reactance, X (Ohms)
Reactance, X (Ohms)

60
120
50
100
40
80
30
60
20
40
10
20
0
0 0 50 100 150 200 250 300
0 50 100 150 200 250 300 350 400
Resistance, R (Ohms)
Resistance, R (Ohms)

Fig. 14 Distance relay tripping characteristic; VT behind, CT Fig. 16 Distance relay tripping characteristic; VT behind, CT
behind UPFC, inactive UPFC. in front of UPFC, inactive UPFC.

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138
Archive of SID
Figure 17 shows the effect of UPFC controlling Figure 19 shows the effect of UPFC controlling
parameters variation on the measured impedance. Here, parameters variation on the measured impedance. Here,
|ESh|, r, and θ takes the values of mentioned cases of (1), |ESh|, r, and θ takes the values of mentioned cases of (1),
(2), (3), and (4). (2), (3), and (4).
It can be seen that as the controlling parameters of It can be seen that as the controlling parameters of
UPFC are varied, the tripping characteristic varies UPFC are varied, the tripping characteristic varies
considerably. In the case of zero fault resistance, the considerably. In the case of zero fault resistance, the
measured impedance is not equal to the impedance of measured impedance is not equal to the impedance of
the line section located between the relaying and the the line section located between the relaying and fault
fault points, but its deviation is less than the previous points, but its deviation is less comparing with that of
case. the first case.

6.3 VT in front of, CT behind UPFC 6.4 VT in front of, CT in front of UPFC
In the case of UPFC, (40) is the measured impedance at In the case of UPFC, (41) represents the measured
the relaying point. impedance at the relaying point.
Figure 18 shows the effect of an inactive UPFC Figure 20 shows the effect of an inactive UPFC
presence on the line. It can be seen that in the presence presence on the line.
of an inactive UPFC the measured resistance increases It can be seen that in the presence of an inactive UPFC
for the high fault resistances, while in the case of the the measured resistance increases slightly while the
low fault resistances, the measured resistance decreases; reactance decrease slightly. In this case no transfer of
for zero fault resistance and high magnitudes of injected the tripping characteristic could be observed.
voltage, the measured resistance becomes negative. On Figure 21 shows the effect of UPFC controlling
the other hand, the measured reactance also increases. In parameters variation on the measured impedance. Here,
this case, no transfer of the tripping characteristic could |ESh|, r, and θ takes the values of mentioned cases of (1),
be observed. (2), (3), and (4).

180 260
(4) (2)
240
160
220 (1)
140 200
(3)
(2) 180
120
Reactance, X (Ohms)

Reactance, X (Ohms)

160
100 140

80 120
(1)
100
60 (3)
80 (4)
40 60
40
20
20
0 0
0 50 100 150 200 250 300 350 400 0 50 100 150 200 250 300 350 400 450
Resistance, R (Ohms) Resistance, R (Ohms)

Fig. 17 Distance relay tripping characteristic variation; VT Fig. 19 Distance relay tripping characteristic variation; VT in
behind, CT in front of UPFC. front of, CT behind UPFC.

180 100

160 90

80
140
70
120
Reactance, X (Ohms)

Reactance, X (Ohms)

60
100
50
80
40
60
30
40
20

20 10

0 0
0 50 100 150 200 250 300 350 400 0 50 100 150 200 250 300
Resistance, R (Ohms) Resistance, R (Ohms)

Fig. 18 Distance relay tripping characteristic; VT in front of, Fig. 20 Distance relay tripping characteristic; VT in front of,
CT behind UPFC, inactive UPFC. CT in front of UPFC, inactive UPFC.

139 Iranian Journal of Electrical & Electronic Engineering, Vol. 2, Nos. 3 & www.SID.ir
4, July 2006
Archive of SID
the case of inactive SSSC, CVse is zero, but C1SZ1L, and
140
(2)
CZse are not zero; therefore, the measured impedance
130
120
(4) deviates from its actual value. In the case of zero fault
110
resistance, C1SZ1L, CVse, and CZse are not zero, so this
100 leads to the measured impedance deviation.
In the case of VT in front of SSSC, (43) presents the
Reactance, X (Ohms)

90
80
(1)
measured impedance. Three previously mentioned
70
(3)
deviating terms are omitted in this case. Here, no
60 transfer or turning could be observed. For zero fault
50
resistance, the measured impedance is the actual value.
40
30
As mentioned, in the case of VT behind and CT behind
20
UPFC, (38) indicates the measured impedance at the
10 relaying point. Here, the measured impedance at the
0 relaying point deviates from its value without UPFC in
0 50 100 150 200 250 300 350 400
Resistance, R (Ohms) four terms. First term is C1SZ1L, which is added to pZ1L
leads to the tripping characteristic transfer upward.
Fig. 21 Distance relay tripping characteristic variation; VT in
Second term is CSh, which is due to the presence of the
front of, CT in front of UPFC.
shunt branch. Third term is CZse, which is due to the
presence of the coupling transformer in series with the
It can be seen that as the controlling parameters of
transmission line. Fourth term is CVse, which is due to
UPFC are varied, the tripping characteristic varies
the presence of the series voltage source in series with
considerably. In the case of zero fault resistance, the
the line. In the case of inactive UPFC, CVse is zero, but
measured impedance is equal to the actual impedance of
C1SZ1L, CSh, and CZse are not zero; therefore, the
the line section between the relaying and fault points.
measured impedance deviates from its actual value. In
the case of zero fault resistance, C1SZ1L, CSh, CVse and
7 Comparison
CZse are not zero, so this leads to the measured
As mentioned, in the case of VT located behind TCSC,
impedance deviation. In the case of VT behind and CT
(42) indicates the measured impedance at the relaying
in front of UPFC, (39) indicates the measured
point, whereas in the case of VT in front of TCSC, (43)
impedance. Here, the measured impedance deviates
presents this value. In the case of VT behind TCSC, the
from its value without UPFC in three terms: C1SZ1L,
measured impedance at the relaying point deviates by
CZse, and CVse. In the case of inactive UPFC, CVse is
two terms: C1SZ1L which is added to pZ1L leads to the
zero, but C1SZ1L, and CZse are not zero; therefore, the
tripping characteristic transfer downward or upward;
measured impedance deviates from its actual value. In
and CZse which is due to the presence of TCSC
the case of zero fault resistance, C1SZ1L, CVse, and CZse
impedance. In the case of compensation degree of zero,
are not zero, so the measured impedance deviates from
or inactive mode, the equivalent impedance of TCSC
its actual value. In the case of VT in front of and CT
would be zero. Therefore, both terms would become
behind UPFC, (40) indicates the measured impedance.
zero and the tripping characteristic would be the same
Here, the measured impedance deviates from its value
as the tripping characteristic without TCSC. Otherwise,
without UPFC by two terms of C1SZ1L and CSh. In the
two terms cause the transfer and the deviation,
case of inactive UPFC, C1SZ1L and CSh are not zero;
respectively. In the case of VT in front of TCSC, (43)
therefore, the measured impedance deviates from its
represents the measured impedance which is the same as
actual value. In the case of zero fault resistance, C1SZ1L
the measured impedance in absence of TCSC, (14), and
and CSh are not zero, so this leads to the measured
two previously mentioned deviating terms are omitted.
impedance deviation. In the case of VT in front of and
Here, there is no transfer. In the case of compensation
CT in front of UPFC, (41) presents the measured
degree of zero, inactive mode, the tripping characteristic
impedance. The previously mentioned deviating terms
would be the same as the tripping characteristic without
are omitted in this case. Here, no transfer or turning
TCSC. In other cases, there would be a deviation
could be observed. In the case zero fault resistance, the
depending on TCSC compensation degree.
As mentioned, in the case of VT behind SSSC, (44) measured impedance is the actual value.
indicates the measured impedance at the relaying point.
Here, the measured impedance at the relaying point 8 Conclusions
deviates from its value without SSSC in three terms. The variation of the system conditions affects the
First term is C1SZ1L, which is added to pZ1L leads to the tripping characteristic. The combination of the changes
tripping characteristic transfer upward. Second term is in the system conditions, FACTS devices structural and
CZse, which is due to the presence of the coupling controlling parameters, and the distance relay
transformer in series with the transmission line. Third instrument transformers connection points have a
term is CVse, which is due to the presence of the series complicated influence on the measured impedance at
voltage source in series with the transmission line. In the relaying point.

Iranian Journal of Electrical & Electronic Engineering, Vol. 2, Nos. 3 & 4, July 2006 www.SID.ir
140
Archive of SID
Comparing the various possible connection points of the and DC Transmission, ACDC 2006, London, UK,
distance relay instrument transformers, it could be 28-31 March 2006, pp. 9-13.
observed that connecting these instrument transformers [10] Jamali S., Kalantar M., and Shateri H., “Effects of
in front of FACTS devices leads to correct impedance Instrument Transformers location on Measured
measurement in the absence of the fault resistance. Impedance by Distance Relay in Presence of
Therefore, providing the voltage and current signals UPFC,” in Proc. 2006 IEEE Power India
from voltage and current transformers in front of Conference, New Delhi, India, 10-12 April 2006.
FACTS devices, leads to much more realistic operation [11] Kazemi A., Jamali S., and Shateri H., “Effects of
of the protective relays for the faults in the first Instrument Transformers Connection Point on
protective zone. Measured Impedance by Distance Relay in
Presence of SSSC,” in Proc. 2006 International
Conference on Power System Technology,
References POWERCON 2006, Chongqing, China, 22-26
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[2] Xia Y. Q., Li K. K., and David A. K., “Adaptive [13] Jamali S. and Shateri H., “Robustness of distance
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[3] Jamali S., “A fast adaptive digital distance Exhibition: Asia and Pacific, IEEE/PES T&D
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Protection, pp. 149-152. Microtran Power System Analysis Corporation,
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A. C., “Adaptive relay setting for flexible AC
transmission systems (FACTS),” in Proc. 2000
IEEE Power Engineering Society Winter Meeting, Hossein Shateri was born in 1979
Vol. 3, pp. 1967-1972. in Karaj, Iran. He received his B.Sc.
and M.Sc. from Iran University of
[5] Dash P. K., Pradhan A. K., Panda G., and Liew
Science and Technology in Tehran
A. C., “Digital protection of power transmission in 2001 and 2003, respectively all in
lines in the presence of series connected FACTS Electrical Engineering. He is
devices,” IEEE Trans. Power Delivery, Vol. 15, currently working towards a Ph.D.
No. 1, pp. 38-43, Jan. 2000. degree in the Department of
[6] Weiguo W., Xianggen Y., Jiang Y., Xianzhong Electrical Engineering at Iran
D., and Deshu Ch., “The Impact of TCSC on University of Science and
Technology (IUST) in Tehran, Iran
Distance Protection Relay,” in Proc. 1998 IEEE since Sep. 2004. H. Shateri is a Member of the Institution of
International Conference on Power System Electrical Engineers (IEE) and a Student Member of the
Technology, POWERCON’98, Vol. 1, pp. 382- Institution of Electrical and Electronic Engineers (IEEE). His
388. field of interest includes Power System Protection, and
[7] Khederzadeh M., “The Impact of FACTS Devices Distribution Systems Protection and Automation.
on Digital Multifunction Protective Relays,” in
Proc. 2002 IEEE Conference and Exhibition on
Transmission and Distribution, Asia Pacific Sadegh Jamali was born in 1956 in
Tehran, Iran. He received his B.Sc.
IEEE/PES, Vol. 3, pp. 2043-2048. from Sharif University of
[8] Dawei F., Chengxue Zh., Zhijian H., and Wei W., Technology in Tehran in 1979,
“The Effects of Flexible AC Transmission M.Sc. from UMIST, Manchester,
System Device on Protective Relay,” in Proc. UK in 1986 and Ph.D. from City
2002 IEEE International Conference on Power University, London, UK in 1990, all
System Technology, POWERCON2002, Vol. 4, in Electrical Engineering. Dr. Jamali
is currently an Associate Professor
pp. 2608-2611.
in the Department of Electrical
[9] Jamali S. and Shateri H., “Effects of Instrument Engineering at Iran University of
Transformers Location on Measured Impedance Science and Technology in Tehran. Dr. Jamali is a Fellow of
by Distance Relay in Presence of TCSC,” in the Institution of Electrical Engineers (IEE) and the IEE
Proc. 8th IEE International Conference of AC Council Representative in Iran. His field of interest includes
Power System Protection and Distribution Systems.

141 Iranian Journal of Electrical & Electronic Engineering, Vol. 2, Nos. 3 & www.SID.ir
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