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CH 4

Chapter 4 discusses metal-semiconductor (M-S) contacts, which are crucial in solid-state devices, highlighting the differences between ohmic and Schottky contacts. It explains the work function, the formation of M-S contacts, and the effects of bias on these contacts. Additionally, the chapter covers the electrical characteristics and I-V behavior of ideal M-S contacts.

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25 views11 pages

CH 4

Chapter 4 discusses metal-semiconductor (M-S) contacts, which are crucial in solid-state devices, highlighting the differences between ohmic and Schottky contacts. It explains the work function, the formation of M-S contacts, and the effects of bias on these contacts. Additionally, the chapter covers the electrical characteristics and I-V behavior of ideal M-S contacts.

Uploaded by

ruru.ee12
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© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
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Chap 4.

M-S Contact

u Workfunction
u M-S Contacts Formation
u Biases of Contacts

MOS Device Physics and Designs 1 Instructor: Pei-Wen Li


Chap. 4 Dept. of E. E. NCU
M-S Contacts

u The metal-semiconductor (MS) contacts play an important role


of one kind or another in all solid-state devices
– Ohmic contact: is a critical link between the semiconductor
and the outside world.
– Schottky contact: ~ p+/n diode.

I I
Ohmic contact Schottky contact

V V

MOS Device Physics and Designs 2 Instructor: Pei-Wen Li


Chap. 4 Dept. of E. E. NCU
Ideal MS Contacts

u Vacuum level: carriers with energy above vacuum level Eo


would be completely free itself from the material.
u Work function: the energy difference between the vacuum level
and the Fermi level. φ ≡ Eo – EF
That is the energy needed for an valence electron to jump into
vacuum. ( to free itself from the binding of nuecli)

MOS Device Physics and Designs 3 Instructor: Pei-Wen Li


Chap. 4 Dept. of E. E. NCU
Work Function

u The work function is variant for different materials.


u In addition, χ : electron affinity ≡ Eo – EC, is an invariant
fundamental property of the specified semiconductor.
u Recall φ ≡ Eo – EF = χ +(EC – EF)FB

Constant for a Changes with the doping


specific material condition of a specific material

MOS Device Physics and Designs 4 Instructor: Pei-Wen Li


Chap. 4 Dept. of E. E. NCU
Formation of MS Contacts

u Once contact is formed and


reaches equilibrium conditions,
the fermi-level of two materials
should be aligned.
u φB = φM - χS : surface potential
energy barrier encountered by
electrons with E = EF in metal.

MOS Device Physics and Designs 5 Instructor: Pei-Wen Li


Chap. 4 Dept. of E. E. NCU
For φM > φS Bias of MS Contacts

⇒The potential barrier seen by the


electrons in the semiconductor reduced
VA ≥ 0 V
⇒a net electron flow from semiconductor
to metal

⇒The potential barrier seen by the


electrons in the semiconductor increased
VA < 0 V
⇒electrons in n-Si are blocked
⇒only some electrons in Metal could
surmount the potential barrier φB.
⇒Reverse current is “Small”
“Rectifying Contacts”
MOS Device Physics and Designs 6 Instructor: Pei-Wen Li
Chap. 4 Dept. of E. E. NCU
Electrical Nature of Ideal MS Contacts

MOS Device Physics and Designs 7 Instructor: Pei-Wen Li


Chap. 4 Dept. of E. E. NCU
Schottky Diode

u Built-in voltage, Vbi = (1/q)[φB – (EC – EF)FB]

MOS Device Physics and Designs 8 Instructor: Pei-Wen Li


Chap. 4 Dept. of E. E. NCU
I-V Characteristics

MOS Device Physics and Designs 9 Instructor: Pei-Wen Li


Chap. 4 Dept. of E. E. NCU
I-V Characteristics

MOS Device Physics and Designs 10 Instructor: Pei-Wen Li


Chap. 4 Dept. of E. E. NCU
Ohmic Contacts

MOS Device Physics and Designs 11 Instructor: Pei-Wen Li


Chap. 4 Dept. of E. E. NCU

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