AO7413

20V P-Channel MOSFET

General Description Product Summary

The AO7413 uses advanced trench technology to VDS -20V

provide excellent RDS(ON), low gate charge and operation ID (at VGS=-10V) -1.4A
with gate voltages as low as 2.5V. This device is suitable RDS(ON) (at VGS= -10V) < 113mW
for use as a load switch applications.
RDS(ON) (at VGS= -4.5V) < 135mW
RDS(ON) (at VGS= -2.5V) < 180mW

Typical ESD protection HBM Class 2

D
SC-70
(SOT-323)
Top View

G
D G
S

Absolute Maximum Ratings TA=25°C unless otherwise noted

Parameter Symbol Maximum Units
Drain-Source Voltage VDS -20 V
Gate-Source Voltage VGS ±12 V
Continuous Drain TA=25°C -1.4
ID
Current TA=70°C -1.2 A
C
Pulsed Drain Current IDM -13
TA=25°C 0.35
B
PD W
Power Dissipation TA=70°C 0.22
Junction and Storage Temperature Range TJ, TSTG -55 to 150 °C

Thermal Characteristics
Parameter Symbol Typ Max Units
Maximum Junction-to-Ambient A t ≤ 10s 300 360 °C/W
RqJA
Maximum Junction-to-Ambient A D Steady-State 350 425 °C/W
Maximum Junction-to-Lead Steady-State RqJL 280 320 °C/W

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 AO7413

Electrical Characteristics (TJ=25°C unless otherwise noted)

Symbol Parameter Conditions Min Typ Max Units

STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage ID=-250mA, VGS=0V -20 V
VDS=-20V, VGS=0V -1
IDSS Zero Gate Voltage Drain Current mA
TJ=55°C -5
IGSS Gate-Body leakage current VDS=0V, VGS= ±12V ±10 mA
VGS(th) Gate Threshold Voltage VDS=VGS, ID=-250mA -0.5 -0.85 -1.2 V
ID(ON) On state drain current VGS=-4.5V, VDS=-5V -13 A
VGS=-10V, ID=-1.4A 94 113
mW
TJ=125°C 130 160
RDS(ON) Static Drain-Source On-Resistance
VGS=-4.5V, ID=-1.3A 111 135 mW
VGS=-2.5V, ID=-1.1A 150 180 mW
gFS Forward Transconductance VDS=-5V, ID=-1.4A 5 S
VSD Diode Forward Voltage IS=-1A,VGS=0V -0.76 -1 V
IS Maximum Body-Diode Continuous Current -1 A
DYNAMIC PARAMETERS
Ciss Input Capacitance 250 325 400 pF
Coss Output Capacitance VGS=0V, VDS=-10V, f=1MHz 40 63 85 pF
Crss Reverse Transfer Capacitance 22 37 52 pF
Rg Gate resistance VGS=0V, VDS=0V, f=1MHz 11.2 17 W
SWITCHING PARAMETERS
Qg Total Gate Charge 3.2 4.5 nC
Qgs Gate Source Charge VGS=-4.5V, VDS=-10V, ID=-1.4A 0.6 nC
Qgd Gate Drain Charge 0.9 nC
tD(on) Turn-On DelayTime 11 ns
tr Turn-On Rise Time VGS=-10V, VDS=-10V, RL=7.1W, 5.5 ns
tD(off) Turn-Off DelayTime RGEN=3W 22 ns
tf Turn-Off Fall Time 8 ns
trr Body Diode Reverse Recovery Time IF=-1.4A, dI/dt=100A/ms 6.1 ns
Qrr Body Diode Reverse Recovery Charge IF=-1.4A, dI/dt=100A/ms 1.4 nC
A. The value of RqJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The
value in any given application depends on the user's specific board design.
B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance.
C. Repetitive rating, pulse width limited by junction temperature T J(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep
initialTJ=25°C.
D. The RqJA is the sum of the thermal impedance from junction to lead RqJL and lead to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300ms pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-ambient thermal impedance which is measured with the device mounted on 1in 2 FR-4 board with
2oz. Copper, assuming a maximum junction temperature of T J(MAX)=150°C. The SOA curve provides a single pulse rating.

APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES
NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO
MAKE CHANGES TO PRODUCT SPECIFICATIONS WITHOUT NOTICE. IT IS THE RESPONSIBILITY OF THE CUSTOMER TO EVALUATE
SUITABILITY OF THE PRODUCT FOR THEIR INTENDED APPLICATION. CUSTOMER SHALL COMPLY WITH APPLICABLE LEGAL
REQUIREMENTS, INCLUDING ALL APPLICABLE EXPORT CONTROL RULES, REGULATIONS AND LIMITATIONS.

AOS' products are provided subject to AOS' terms and conditions of sale which are set forth at:
http://www.aosmd.com/terms_and_conditions_of_sale

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 AO7413

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

25 10
-10V
-5V VDS=-5V
-9V
20 -4V 8
-8V
-7V -3.5V
15 6
-6V
-ID (A)

-ID(A)
-3V
10 4
-2.5V

5 2 125°C
-2V 25°C
VGS=-1.5V
0 0
0 1 2 3 4 5 0 1 2 3 4
-VDS (Volts) -VGS(Volts)
Fig 1: On-Region Characteristics (Note E) Figure 2: Transfer Characteristics (Note E)

180 1.60
Normalized On-Resistance
VGS=-2.5V ID=-1.1A, VGS=-2.5V
160
1.40
ID=-1.3A, VGS=-4.5V
RDS(ON) (mW)

140
VGS=-4.5V 1.20
ID=-1.4A, VGS=-10V
120

1.00
100 VGS=-10V

0.80
80
0 25 50 75 100 125 150 175
0 1 2 3 4
-ID (A) Temperature (°C)
Figure 3: On-Resistance vs. Drain Current and Gate Figure 4: On-Resistance vs. Junction Temperature
Voltage (Note E) (Note E)

360 1.0E+01
ID=-1.4A
320
1.0E+00
280
1.0E-01
RDS(ON) (mW)

240 125°C 25°C

-IS (A)

1.0E-02
200
125°C 1.0E-03
160

120 1.0E-04
25°C
80 1.0E-05
0 2 4 6 8 0.0 0.2 0.4 0.6 0.8 1.0 1.2
-VGS (Volts) -VSD (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage Figure 6: Body-Diode Characteristics (Note E)
(Note E)

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 AO7413

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

5 600

VDS=-10V
ID=-1.4A
4
450

Capacitance (pF)
Ciss
-VGS (Volts)

3
300
2

150 Coss
1

Crss
0 0
0 1 2 3 4 5 0 5 10 15 20
Qg (nC) -VDS (Volts)
Figure 7: Gate-Charge Characteristics Figure 8: Capacitance Characteristics

100.0 1000
TJ(Max)=150°C
10ms TA=25°C
10.0 100
RDS(ON) 100ms
Power (W)
-ID (Amps)

limited
1.0 1ms 10
10ms
DC 100ms 1
0.1
10s
TJ(Max)=150°C
TA=25°C
0.0 0.1
0.01 0.1 1 10 100 0.00001 0.001 0.1 10 1000

-VDS (Volts) Pulse Width (s)

Figure 10: Single Pulse Power Rating Junction-to-
Figure 9: Maximum Forward Biased Safe
Ambient (Note F)
Operating Area (Note F)

10
D=Ton/T In descending order
ZqJA Normalized Transient

TJ,PK=TA+PDM.ZqJA.RqJA D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse

Thermal Resistance

RqJA=425°C/W
1

0.1
PD

Ton
Single Pulse T
0.01
0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000

Pulse Width (s)

Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)

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 AO7413

AO7413
Gate Charge Test Circuit & Waveform
Vgs
Qg
- -10V
VDC
-
+ Vds Qgs Qgd
VDC
+
DUT
Vgs

Ig

Charge

Resistive Switching Test Circuit & Waveforms

RL
Vds ton toff

td(on) tr td(off) tf
Vgs
-
Vgs DUT VDC
Vdd 90%
Rg
+

Vgs 10%
Vds

Diode Recovery Test Circuit & Waveforms

Vds + Q rr = - Idt
DUT
Vgs

t rr
Vds - L -Isd -I F
Isd dI/dt
+ Vdd -I RM
Vgs VDC
Vdd
Ig
- -Vds

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