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Assignment semiconductor

The document outlines an assignment focused on semiconductors, lasers, and superconductivity, consisting of various problems related to intrinsic carrier density, resistivity, conductivity, and Hall effect calculations. It includes tasks such as calculating the concentration of charge carriers, evaluating conductivity in silicon, and determining the energy gap and Hall coefficient. Additionally, it addresses the properties of superconductors and laser emissions, requiring the application of physical principles and formulas.

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ashishtorpedo101
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6 views

Assignment semiconductor

The document outlines an assignment focused on semiconductors, lasers, and superconductivity, consisting of various problems related to intrinsic carrier density, resistivity, conductivity, and Hall effect calculations. It includes tasks such as calculating the concentration of charge carriers, evaluating conductivity in silicon, and determining the energy gap and Hall coefficient. Additionally, it addresses the properties of superconductors and laser emissions, requiring the application of physical principles and formulas.

Uploaded by

ashishtorpedo101
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
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Assignment – 3 (Semiconductors, Laser , Superconductivity)

1. The intrinsic carrier density at room temperature in Ge is 2.37 × 1019/𝑚3. If the electron
and hole mobilities are 0.38 and 0.18 𝑚2𝑉–1𝑠–1 respectively. Calculate the resistivity.
2. For an intrinsic semiconductor with gap width 𝐸g= 0.7eV, calculate the concentration of
intrinsic charge carriers at 300 K assuming that 𝑚∗e​= 𝑚∗ =h​ 𝑚 (rest
0
mass of electron).
3. The energy gap of Si is 1.1 eV. Its electron and hole mobilities at room temperatures are
0.48 and 0.013 𝑚2𝑉–1𝑠–1 respectively. Evaluate its conductivity.
4. Suppose that the effective mass of holes in a material is 4 times that of electrons. At
what
temperature would the Fermi level be shifted by 10% from the middle of the forbidden
energy gap? Given 𝐸g= 1eV.
5. i) Find the conductivity of intrinsic silicon at 300K. It is given that 𝑛i at 300K in silicon is
1.5 × 1016/𝑚3 and the mobilities of electron and holes in silicon are 0.13 and 0.05
𝑚2𝑉–1𝑠–1 respectively.
ii)​ If donor type impurity is added to the extent of one impurity atom in 108 silicon
atoms, find its conductivity.
iii)​ If acceptor type impurity is added to the extent of one impurity atom in
8
10 silicon atoms, find its conductivity.
6. The resistivity of an intrinsic semiconductor is 4.5 ohm-m at 20° and 2.0 ohm-m at 32°.
What is the energy gap?
7. A semiconducting crystal with 12 mm long, 5 mm wide and 1 mm thick has a magnetic
density of 0.5 Wb/𝑚2 applied from front to back perpendicular to largest faces. When a
current of 20 mA flows length wise through the specimen, the voltage measured across
its width is found to be 37 μV. What is the Hall coefficient of this semiconductor?
8. In a Hall experiment a current of 25 A is passed through a long foil of silver which is
0.1mm thick and 3cm wide. If the magnetic field of flux density 0.14 Wb/𝑚2is applied
perpendicular to the foil, calculate the Hall voltage development and estimate the
mobility of electrons in silver. The conductivity of silver is 6.8 × 107 Ω–1 𝑚–1 𝑎𝑛𝑑 the
Hall coefficient is (– 8.4 ×10–11) m3 / coulomb.
9. Find the probability of occupancy of electrons in the conduction band if the energy of
electrons is 𝐸F + 0.026 eV, where 𝐸F is Fermi energy. Given the Boltzmann constant k =
1.38 × 10–23 J/K.
10. A sample of germanium is made of P –type material by adding acceptor atoms at a rate
of one atom per 4 × 108 germanium atoms. 𝑛i = 2.37 × 1019/𝑚3 at 300K and all the
acceptor atoms are ionized at 300K. The density of germanium is 4. 4 × 1028/𝑚3.
Compare the density of electrons with intrinsic charge carriers.
11. The penetration depth of mercury at 3.5 K is about 750 Å. Estimate the penetration
depth at 0K.
12. A superconducting tin has a critical temperature of 3.7 K at zero magnetic field and a
critical field of 0.0306 tesla at 0K . find the critical field at 2 K.
13. Calculate the relative population of energy level N1 and N2 at 300K, λ = 600 nm.

14. A certain ruby laser emits 100 J pulses of light. Whose wavelength is 6940 Å. What is
minimum No. Of Cr+3 ions in the laser.

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