Silan

Microelectronics SVSP35NF65P7D3_Datasheet

35A, 650V SUPER JUNCTION MOS POWER TRANSISTOR

DESCRIPTION 2

SVSP35NF65P7D3 is an N-channel enhancement mode high

voltage power MOSFETs produced using Silan’s DPMOS technology. 1
It achieves low conduction loss and switching losses. It leads the
design engineers to their power converters with high efficiency, high 3
power density, and superior thermal behavior. Furthermore, it’s
1.Gate 2.Drain 3.Source
universal applicable, i.e., suitable for hard and soft switching
topologies.

FEATURES

 35A, 650V, RDS(on)(typ.)=85m@VGS=10V

1
 New revolutionary high voltage technology 2 3

 Periodic avalanche rated TO-247-3L

 Extreme dv/dt rated
 High peak current capability

ORDERING INFORMATION
Part No. Package Marking Hazardous Substance Control Packing Type
SVSP35NF65P7D3 TO-247-3L P35NF65 Halogen free Tube

HANGZHOU SILAN MICROELECTRONICS CO.,LTD Rev.:1.2

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 Silan
Microelectronics SVSP35NF65P7D3_Datasheet

ABSOLUTE MAXIMUM RATINGS (UNLESS OTHERWISE NOTED, TJ=25C)

Characteristics Symbol Ratings Unit
Drain-Source Voltage VDS 650 V
Gate-Source Voltage VGS ±30 V
TC=25°C 35
Drain Current ID A
TC=100°C 22
Drain Current Pulsed(Pulse time 5µs) IDM 140 A

Power Dissipation (TC=25C) 298 W

PD
- Derate above 25C 2.4 W/C
Single Pulsed Avalanche Energy (Note1) EAS 1131 mJ
Reverse diode dv/dt (Note 2) dv/dt 50 V/ns
MOSFET dv/dt ruggedness (Note 3) dv/dt 100 V/ns
Operation Junction Temperature Range TJ -55～+150 C
Storage Temperature Range Tstg -55～+150 C

THERMAL CHARACTERISTICS
Ratings
Characteristics Symbol Test conditions Unit
Min. Typ. Max.
Thermal Resistance,
RθJC -- -- -- 0.42 C/W
Junction-to-Case
Thermal Resistance,
RθJA -- -- -- 50 C/W
Junction-to-Ambient
+2
Soldering Temperature (in line) Tsold 15 -0 sec, 1time -- -- 260 C

HANGZHOU SILAN MICROELECTRONICS CO.,LTD Rev.:1.2

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 Silan
Microelectronics SVSP35NF65P7D3_Datasheet

ELECTRICAL CHARACTERISTICS (UNLESS OTHERWISE NOTED, TJ=25C)

Characteristics Symbol Test conditions Min. Typ. Max. Unit
Drain -Source Breakdown Voltage BVDSS VGS=0V, ID=250µA 650 -- -- V
VDS=650V, VGS=0V, TJ=25C -- -- 6.0
Drain-Source Leakage Current IDSS µA
VDS=650V, VGS=0V, TJ=125C -- 80 --
Gate-Source Leakage Current IGSS VGS=±30V, VDS=0V -- -- ±100 nA
Gate Threshold Voltage VGS(th) VGS=VDS, ID=250µA 2.5 -- 4.5 V
Static Drain- Source
RDS(on) VGS=10V, ID=17.5A -- 85 100 m
on State Resistance
Gate resistance Rg f=1MHz -- 1.1 -- 
Input Capacitance Ciss -- 2923 --
Output Capacitance Coss VDS=100V, VGS=0V, f=1.0MHz -- 109 -- pF
Reverse Transfer Capacitance Crss -- 20 --
Turn-on Delay Time td(on) -- 28 --
VDD=325V, VGS=10V,
Turn-on Rise Time tr -- 69 --
RG=1.6Ω, ID=35A ns
Turn-off Delay Time td(off) -- 92 --
(Note 4,5)
Turn-off Fall Time tf -- 28 --
Total Gate Charge Qg -- 139 --
Gate-Source Charge Qgs VDD=520V, VGS=10V, ID=35A -- 21 -- nC
Gate-Drain Charge Qgd (Note 4,5) -- 92 --
Gate-plate voltage Vplateau -- 7.1 -- V

SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS

Characteristics Symbol Test conditions Min. Typ. Max. Unit
Continuous Source Current IS TC=25C, Integral Reverse P-N -- -- 35
A
Pulsed Source Current ISM Junction Diode in the MOSFET -- -- 140
Diode Forward Voltage VSD IS=35A, VGS=0V -- -- 1.4 V
Reverse Recovery Time Trr -- 125 -- ns
IS=35A, VGS=0V,
Reverse Recovery Charge Qrr -- 0.6 -- µC
dIF/dt=100A/µs (Note 4)
Reverse Recovery Peak Current Irrm -- 10 -- A
Notes:
1. L=79mH, IAS=5.0A, VDD=100V, RG=25, starting temperature TJ=25C;
2. VDS=0~400V, ISD<=35A, TJ=25C;
3. VDS=0~400V;
4. Pulse Test: Pulse width ≤300μs,Duty cycle≤2%;
5. Essentially independent of operating temperature.

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 Silan
Microelectronics SVSP35NF65P7D3_Datasheet
TYPICAL CHARACTERISTICS

Figure 1. On-Region Characteristics Figure 2. On-Region Characteristics

100 70
VGS=5.0V VGS=5.0V
VGS=5.5V VGS=5.5V
VGS=6.0V 60 VGS=6.0V
80 VGS=7.0V VGS=7.0V
Drain Current – ID(A)

Drain Current – ID(A)

VGS=8.0V VGS=8.0V
VGS=10V 50 VGS=10V
VGS=15V VGS=15V
60 40
Notes:
30 1.250µS pulse test
40
Notes: 2.TJ=125°C
1.250µS pulse test 20
2.TJ=25°C
20
10

0 0
0 5 10 15 20 0 5 10 15 20
Drain-Source Voltage – VDS(V) Drain-Source Voltage – VDS(V)

Figure 3. Transfer Characteristics Figure 4. On-Resistance Variation vs. Drain Current

Drain-Source On-Resistance–RDS(ON)(mΩ)

1000 120
-55°C
VGS=20V
25°C
VGS=10V
150°C
Drain Current – ID(A)

100
100

10

80
1
Notes:
1.250µS pulse test
Note: TJ=25°C
2.VDS=30V
0.1 60
0 2 4 6 8 10 0 10 20 30 40 50
Gate-Source Voltage– VGS(V) Drain Current – ID(A)

Figure 5. On-Resistance Variation vs. Figure 6. Gate-source Turn-on Voltage

Drain-Source On-Resistance–RDS(ON)(mΩ)

Gate-Source Voltage vs. Temperature characteristics

500 1.4
TJ=25°C
Gate-source Turn-on Voltage –

TJ=150°C
400 1.2
VGS(th)(Normalized)

300 1.0

200 0.8

100 0.6

Note:ID=17.5A Note:ID=250µA
0 0.4
4 5 6 7 8 9 10 -100 -50 0 50 100 150 200
Gate-Source Voltage– VGS(V) Junction Temperature – TJ(°C)

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 Silan
Microelectronics SVSP35NF65P7D3_Datasheet
TYPICAL CHARACTERISTICS (CONTINUED)

Figure 7. Body Diode Forward Voltage

Variation vs. Source Current and Temperature Figure 8. Capacitance Characteristics
100 100000
-55°C Ciss Ciss=Cgs+Cgd(Cds=shorted)
Coss
Reverse Drain Current – IDR(A)

25°C Coss=Cds+Cgd
Crss Crss=Cgd
150°C 10000

Capacitance(pF)
10
1000

100
1

Notes: 10
Notes:
1.250µS pulse test 1. VGS=0V
2.VGS=0V 2. f=1MHz
0.1 1
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0 100 200 300 400 500 600
Source-Drain Voltage– VSD(V) Drain-Source Voltage – VDS(V)
Figure 10. Breakdown Voltage
Figure 9. Gate Charge Characteristics
1.2
Variation vs. Temperature
12
Drain-Source Breakdown Voltage–

VDS=520V
Gate-Source Voltage– VGS(V)

VDS=325V
10
VDS=130V
1.1
BVDSS(Normalized)

6 1.0

4
0.9
2

Note: ID=35A
0 0.8
0 30 60 90 120 150 -100 -50 0 50 100 150 200
Total Gate Charge – Qg(nC) Junction Temperature – TJ(°C)

Figure 11. On-resistance Variation vs. Temperature Figure 12. Max. Safe Operating Area
3.0 103
Drain-Source On-Resistance

2.5
– RDS(ON)(Normalized)

102 10µs
Drain Current - ID(A)

2.0
100µs

1.5 101 1ms

10ms
DC
Operation in This Area is
1.0 Limited by RDS(ON)
100
Notes:
0.5 1. VGS=10V Note:
1.ID=f(VDS);TC=25°C;
2. ID=17.5A
2.Single Pulse
0.0 10-1
-100 -50 0 50 100 150 200 100 101 102 103
Junction Temperature – TJ(°C) Drain Source Voltage - VDS(V)

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 Silan
Microelectronics SVSP35NF65P7D3_Datasheet
TYPICAL CHARACTERISTICS (CONTINUED)

Figure 13. Power dissipation vs. Case Temperature Figure 14. Max. Drain Current vs. Case Temperature
350 40

300 35
Power Dissipation – PD(W)

30

Drain Current -ID (A)

250
25
200
20
150
15
100
10

50 5

0 0
0 25 50 75 100 125 150 175 0 25 50 75 100 125 150 175
Case Temperature – TC(°C) Case Temperature – TC(°C)
Figure 15. Transient Thermal Impedance
0
vs. On-pulse Duration
10
70%
Normalized Thermal Impedance

50%

30%

10-1 10%

5%

2%

1%
10-2
0.5%

0.2%

Single Pulse Note: D=tp/T

10-3
10-6 10 -5
10 -4 -3
10 10-2 10-1 100
On-pulse Duration – tp (S)

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 Silan
Microelectronics SVSP35NF65P7D3_Datasheet
TYPICAL TEST CIRCUIT

Gate Charge Test Circuit & Waveform

Same Type
as DUT VGS
Qg
10V

VGS VDS
Qgs Qgd

DUT
Vgs(th)
Ig

Qg(th) Charge

Resistive Switching Test Circuit & Waveform

RL
VDS
VDS
90%

VGS

RG DUT VDD
10%
VGS
VGS td(on) td(off)
tr tf
ton toff

Unclamped Inductive Switching Test Circuit & Waveform

L 1 2 BVDSS
EAS =
VDS 2 LIAS BVDSS VDD
BVDSS
ID
IAS

RG DUT
VDD
ID(t)
VGS VDS(t)
VDD
tp

tp Time

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 Silan
Microelectronics SVSP35NF65P7D3_Datasheet
PACKAGE OUTLINE

TO-247-3L UNIT: mm

E A MILLIMETER
A2 SYMBOL
Q

MIN NOM MAX

φP
A 4.80 5.00 5.20
A1 2.21 2.41 2.59
E2

A2 1.85 2.00 2.15

D

b 1.11 _ 1.36
_
b2 1.91 2.25
_
b4 2.91 3.25
_
c 0.51 0.75
L1

D 20.80 21.00 21.30

E 15.50 15.80 16.10

E2 4.40 5.00 5.20
L

e 5.44 BSC

L 19.72 19.92 20.22

_ _
L1 4.30
b2 C
b A1 Q 5.60 5.80 6.00
b4
e P 3.40 — 3.80

Important notice :
1. The instructions are subject to change without notice！
2. Customers should obtain the latest relevant information before placing orders and should verify that such information is
complete and current. Please read the instructions carefully before using our products, including the circuit operation
precautions.
3. Our products are consumer electronic products or the other civil electronic products.
4. When using our products, please do not exceed the maximum rating of the products, otherwise the reliability of the whole
machine will be affected. There is a certain possibility of failure or malfunction of any semiconductor product under specific
conditions. The buyer is responsible for complying with safety standards and taking safety measures when using our products
for system design, sample and whole machine manufacturing, so as to avoid potential failure risk that may cause personal
injury or property loss.
5. It is strongly recommended to identify the trademark when buying our products. Please contact us if there is any question.
6. Product promotion is endless, our company will wholeheartedly provide customers with better products!
7. Website: http: //www.silan.com.cn

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 Silan
Microelectronics SVSP35NF65P7D3_Datasheet

Part No.: SVSP35NF65P7D3 Document Type: Datasheet

Copyright: HANGZHOU SILAN MICROELECTRONICS CO.,LTD Website: http: //www.silan.com.cn

Rev.: 1.2
Revision History:
1. Update figures 6, 12 and 14
2. Add figure 15
Rev.: 1.1
Revision History:
1. Update ELECTRICAL CHARACTERISTICS
2. Update the template of datasheet
Rev.: 1.0
Revision History:
1. First release

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