Scribd
Upload
28 views

Assignment 1

The assignment focuses on various calculations related to semiconductor device physics, including estimating Fermi energy, electron concentration, density of states, and intrinsic carrier concentration in silicon. It also involves determining the maximum temperature for silicon's intrinsic carrier concentration and estimating the conductivity and resistivity of intrinsic and doped silicon. The document provides specific parameters and methods for calculations related to these topics.

Uploaded by

21bcs008
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
28 views

Assignment 1

The assignment focuses on various calculations related to semiconductor device physics, including estimating Fermi energy, electron concentration, density of states, and intrinsic carrier concentration in silicon. It also involves determining the maximum temperature for silicon's intrinsic carrier concentration and estimating the conductivity and resistivity of intrinsic and doped silicon. The document provides specific parameters and methods for calculations related to these topics.

Uploaded by

21bcs008
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
You are on page 1/ 1

Assignment # 1 (Semiconductor Device Physics)

1. Estimate the Fermi energy of silver by two different methods. The silver atomic weight
is 107.9 amu, density is 10.5 gm/cc and it has face centred cubic structure with lattice
parameter of 4.09Å.
2. Calculate the number of electrons per unit volume filled up to EF/2 (Half of the Fermi
energy) in any metal at zero Kelvin.
3. Calculate the density of states per unit volume in the energy range 0 to 1eV.
4. Calculate the probability that a state in the conduction band is occupied by an electron
at 300K. The Fermi energy is 0.25eV below the conduction band. Calculate the electron
concentration in conduction band of silicon. Take electron effective mass equal to free
electron mass.
5. Calculate the intrinsic carrier concentration in silicon at 300 K. Silicon band gap is
1.12eV.
6. The intrinsic carrier concentration in silicon is desired to be no greater than 1.0×10 126
per cc. Determine the maximum temperature allowed for its silicon.
7. Calculate the position of the intrinsic Fermi level with respect to centre of the bandgap
in silicon at 300 K. Take effective mass of electron mn*=1.08m0 and effective mass of
hole mp*=0.56m0, where m0 is the free electron mass.
8. The experimentally determined intrinsic carrier concentration in a semiconductor is
given in the table below
T (K) ni (m-3)
250 1.09×1014
300 1.01×1016
350 2.65×1017
400 3.15×1018
450 2.21×1019

Estimate the semiconductor bandgap energy and the product NcNv.


9. Estimate the conductivity and resistivity of intrinsic silicon at 300 K. Given that the
mobility of electrons and holes in silicon is 1350 and 480 cm2/V-s, respectively.
10. Estimate the conductivity and resistivity of silicon doped with donor concentration of
1.0×1016 per cc. Observe the change in its conductivity when the doping concentration
is varied as 1.0×1014, 1.0×1015, 1.0×1016, 1.0×1017, 1.0×1018 per cc.

Note: Assume appropriate value of the constants you need for calculations.

You might also like