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Oc Unit 4

Photo detectors are essential components in fiber optic communication systems, converting optical signals into electrical signals. The most common types are P-I-N photodiodes and avalanche photodiodes (APDs), which have specific performance requirements such as high responsivity and low noise. APDs utilize avalanche breakdown for increased sensitivity and gain, while P-I-N photodiodes are characterized by their intrinsic layer that enhances photon absorption and response speed.

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9 views12 pages

Oc Unit 4

Photo detectors are essential components in fiber optic communication systems, converting optical signals into electrical signals. The most common types are P-I-N photodiodes and avalanche photodiodes (APDs), which have specific performance requirements such as high responsivity and low noise. APDs utilize avalanche breakdown for increased sensitivity and gain, while P-I-N photodiodes are characterized by their intrinsic layer that enhances photon absorption and response speed.

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3-12. PHOTO DETECTORS: ae Photo detector }——elechriced energy * Photo Detectox ig one of the componeng Used fo Lhe reciever circuit of epiicd fiber communication + Ir senses the Varying opticat Alqnas falling Upon x and converlg tndo corresponding. Varying elerrical Rigral * The moat Commonly Aged Photoclebectorg are 1. P-I-N Photo Detector 2. Avalanche Photo Diode Photo detector must met lt following important vequiremeank Je give an optimum pexformance - 4. High responsivity. @ Sensitiving in Be emiszion wavelength vange of Lhe epkicod Zource being wLUiBed - 2. TngenstHive te Variations in-kmperature 3. Addition of noiée Js the ayster Bhould be minimum 4. High REsponsivty J Fast vegporse Speed}. S- Showd have a long operating dife. 6. Should be cob ef fecive Nodi *. photo Detedorg ave aio Couled 9% phos diodes which detectg the presence of Light and conver tg it- Tr CleCticod ignal - + Photo detecdorg Chote cliocles) are ususlyy operated tm « nay 2 - a in “ Reverge biag. zr, & [Ee neat & 2 Cente : When Photodiode %% fLaminoulid Wht Light (phatoné ) * foi th, energy (he ) qreaker than.” tha enexgy 9p CE) foe : emi vorducior, then electron—hole parva are ‘d due & Absorption of. Protons. L._P-I-N Photo Dtode + IIASA Tt dent @—> Hole 3 ~ Photors O—>Elechon p re ln reac! neat RL oe pur 7 shrucuse & Figured: & pINn photo diode A PIN photo-cliode comsislh of a wide fndrimic Semicond udox Aapes between fhe ‘p' and’ N’ Semiconductor reziong % Bhown 0 wide, there PS in $iqured. Since the intrinsic Layer i 5 otomg Will be abéorbed a thigh probability. thal tncoming ph In Ti rather than in Ute P @ N-Tegiong. Thia hag an Frproved CFF Fcrenup and the Speed velative 6 Che imple pNn- Photodiode. , Photo > Baad = \ denerated electron Ep ‘poet 5 ! ie u S \ 2 Photon! 2 hr>e, | = t Photo conduction Rand) Eppey ' ‘Fehepaided ohe ‘Oe Depletion cae Photo carrie, ' Teqion { Valente Band Figuee: Energy Band diagram for a PIN diode -- eens a jor owe Wor king t- AAA, When an Inadent photon hag an energy h?ee, the Photon can give Up TE energy and exctlé an electron from te valence band 0 the conduction band. Thi® process generateg mobile (movabl) electron~hole parrg ag Shown ty Hyure 2. These electron, gind holeg are Gilled a8" PholeGraias Thevefure photo Cartierg Produceg @ Photo Cument, When a | Pever&e- blag Voltage fs applied Acwag the device The photo cument "I," Flouss Lhrugh, extern lead Resistor OAd produces elect col oudput Ligne. The déajance moved by charged Carsterg feknown af Ire . “dtpfusion Aengis: Asses travelling trig dicdance Lhe carriers Fewombine. Taetimetaken for tecombinadion % known 8 “ carrter Lifetime’, os Dif busion Legis Por eledrong 2 Ly=V Ont aoa Diffusion bengih for hole, Lp =f Dp Tp *Respornivitp g lohort Dp= eledaon OFF UdION Co. effi ent: in rt/ & PIN-Photode- S Ldedor iz Dp= hole DFFFUsIon Co-e£EP Genk tr cnt |s. =!P_ _@ Ge carries ee 4 eledaoan), Whe, T= Generate a Cpe Grnier aa cone I. Retadides ophicel peer. Gat Performance Pavameterg of PIN-photodetuor: (reps. YP) rnrrnrnw LR RRR OR Problems) 1 Qypodun siFicierey = Crt] Tt 16 defined 98 the Yatio ef Number of electron-hole pairg generated 6 Che number of incident photons ie, "= Number of electron-hole pair generated Number ef Tncident photon te, ae Ye= corresponding Cleckon ralz (elechoms per Second) Tp = Tncdent photon vee . Cphotong per fecone ) where, Node. Quantum effi cienay i generally leag than Unity. © RESPONSI VITY t- (RD TH lg defined af Mie photocunet generaitd LIpy fate of {incident eptical Power. Et ie densted by ‘Ri ond t4 meagured in AlW- ey Reapontivity Ces =P aw! 0 ar Who Ip= Generated photo current = YY 3 whore Y=h6 xl 'e P= Incident opdic) power = h? = he A * Relation befween 2xlenal Quantum efi dens (')) 4 Respowsivity ig, R= Ww. nya, he ~ he Whee y= Quantum effidiensy + T= Fr eng A= Photon roavelingf- fie 6.605 x10 Ts no C= 3x10 ms! Wi> Gu sie, peewsigaalh t= it Ws the MAK MWY waveleagt q electon- hole TL iz denoted by * de’ Mobhewods cally hb. k+G , the Photon Energy , Ege Bandgap ener9 oy photon that Teas Epraten = Fy 2 et Ag S > Eq a aah writin Ape photon wavelength ig ARA« ih ia ag -? Probl Nees | bie fi o. —t, &f pormulae ¢ whore a) G . ne e+ Y= electon ralr is Sustae ® f=? ~ A photon of enesqy F=l-53xi5 us. eT A a he 66asxi ano! ase tnetden dre Photodiode, ns Sx10'T — [uchich hag a vesporrsivity = 32pm O-6S5Aw. If the Opfical power leve : Pe “3p 48 lopiw find the photocurrent Te find p+ wk-T, Responsivity |genesajed. 7 ; r=ir pst S20)" 8 Given Bg = rSaxto'7 + Reoesnd: Fo oR PoE lopw » Ip>? tote 319 Fr Me R= DY = OFXI-EXI0 WKT Ro J fy SMO >, =6 A Lp sotyty aw! | Pye RxTprO-6S* IOKI0 : R~ oF UIG Abs Given & At A> when 3x\0" phofoig Each usr > - O Wwavehergi o} | ope are inddent on a photodiode, on an ai ee |-a xio! electaong ase Colleded “at the terminalg oF Ue device. Nefesmine @) Quantum efficiency Gyre >Res posi vily at dptm No.g photens m=3xi0" No. 9 Clectsong genesaled ! Ty =haxio! Azinibtm G9 Quantum efficienty 5 a yee [-2xI0" _ Tp 3xio" [y= OF @ Responsivisy: pale. uy a) R= OAXIG XID X1X10 6: 62S (524 X 3x1DS » R= 0.288 Al. The Quantua epticienup tor Jo Ga As fa around MOY, « Find the Tespomsivi ty af— 1309 and [6oonm wavelength Tg Lhe bandgap energy of the dtode 14 0. ev, find the Cut-ope wavelengtiy m2 Giivea: Quanteisr eficienyy 0) =40/ “1 0-G BandgapEneigy: 2 Ogev be, Ege 08 x}6xlde1T — Acct 5 R=? ea 'Zo0nm Koone wk 3 Bre:- Given: 20-9 2 A ok T. Responsivi ty inkeransy R= WY = VA : 45 he a ot R= OAK Exo 6 EASK IGP K3K ID [R= F2SK1F A] Als ab AZ oonm 3 R= Tas, 242s n1Z00%i67 OF A= 1S0ONM | R= Trasrz 125 x 1S00x109 WSoonery | cub-off Wwavelengis: Cx) py he 2 66a knit COE. O-2 X06 x16 19 c= FSSRm és An JoGaAls PLN photodiode tag the folloustag powomelerg at ausavelengts [300mm - Quankisn efficiency = 069 & Surface . + deakeage Corssent is Negligible Find oul the pormary photodetector CUnrenb. ls maundain ef BER |Z0onm 27 7 Pera RW op Ke 72 - I, se Wk T Ret >) Tp= Rxfe a her 4 R= MYA _oaxké xi %lsooxis . CC ERSK IS axiok Ra 043 +} Tp = RxP=0-443x 3.6xl5% 3aspA eee ch epee Avalon e Prom pioae CAPD . “[. BReach through Avalacche pholodiocle RAPD. nt P--—- 4----- Wey =) Perketion 1(P {% vegion Absorption, aan ~ Je 1 ) 1 1 I 1 1 tay -- Fig 4: Reach trough APD (RAPD) Strusue Figquae 4 Shows Mo Schematic Atruchwe of an APD. By Werte of fhe doping concentration and phystod Gngruaion of a nt p tundion, te electrtefreid £4 High enough ts couse impact fonigation. Under noxmya operation -biag , the T- Laver Cea(prirgion &% Completely depleted . Thig Ig Known 08 Teach | Shrough condition, hence App's ave alzo_known as Reach through, APD'S . rT Apps nt & pt regions ave highly doped region. These ane Aow Tesistance Tegiong and have vesy tow Voliagedep. The 1(F) 8 Lem) region 44 Lighsly aloped (measly tse neic) The Above Cnfige- vation %% known % ptr prit seach tysough Stoucure APDIA uses Avalanche breakdows phenomena jor te operation. The App has 7 gain ishich Encreases th vesponmivisy . ; Light abdéorpton fo Apps 18 most efficient in I~ Layer. In Shas vezion, La eclectic freld Gepavates the cavaiengs ond the Clectsong Avi ft tots te avalanche region Where carrier mune p Licdion ocLUrTg . The mutiplication factor M vor all carriers generated in the photo didode is defined as I, Me™" Where a > y= Average Value toted muttiplied outpur cunenh Ip= psimary — usmuthiplied photocurrent. * Respomsi ity ef APD fa given by :- where , R — SoA + M=hMuwipl codfonfauor RAAAARAA~ARD C= Quaatum e4ticien he I“ ey a eG x15 9c J. AIRCON Avalanche phoioDiede |) — lavelenstts has a Quake efficiency ef = a 7 Boo boy at a wavelengih 9 qGoouny he CbrsxtorTs 2@= 3xl0 mm TF OS pW ef ephi Gd power pordtice Sa must plied photecer were of \oHA, find tke pofmary proto current and Must plication { fa crores > Grvens Y= 66% =0.65 aig Py = 0 SMW SOSKIO TW Pa Musi plied photocurstnh, Tye loner 5 is) pot aay photuarsent Tpst,M=! beeT MULAPL Gsi«n fader, fee es Tp ig i “ms Joxi” —O Be Cet 5 Wee primary photo caret Tp UF HNO * tr = PR Py ave — Jp Ip= nexid 90% R= he 7 axe osxie § %O° bx! ; Tee ie = Tesnesreen® e Zz O-QAAKA by Gibanrediog Tp ™O Me toxie& Wnlo > _= 45 i) Wa Photo Delecror NOE .— Dts DAR > . Re photo Dekuos ig Expeded ts A Tm epticad Communicadion Hyskems. The ty design photodeleciors bith Very goo | Tako. Tre Bignas te rwige rabfo ig given by Ss = Sigaad power Psp m photo cument_ N "photo dlelecior Noise power -} Amp Frew Noise power To achieve a igh, Shu yatio, the following conde bi om Shoud be mer: 1. High quantum effretenup 6 generale alasge Riga power Q. Amplifier Noise Showd be kept as low possible. elec vesy Weak BigraK sefove id necessary, dd Aigred ty Nojse (3) N Vot-7 Bias volloge FIgd: Stmels Model of protodetedus Rewevex Sse LWurles wf Nog x Principle Noises ascociated - ri tty the photodiodes s— ; Re RR OO ww The patacple noise, assodaded $i) ta Photodiode @ photode— tector are C Quacdur® shot Moise (L3,_,) QD Suspots dark cme Se G).Dack cumed Nove (Tp) @) Thermal (Tonryen) (ih) Bulk Dark Cuwerr Novee:( TS.) Noise S-Queton © cit ee TRig, arises from Hie SahAlicd nature ef Production ANd Colecton ef Photoelectaiy When An optic Bigna) vy inuclent on photodlelector: Lied a Wecenoled by < Te >. Th given oy <= Ge = 24 TpBe MFCM) these F(m) = aloise Piguse Be= Redever Bandvid th > Dark werd Noises PADDY >- The Dark Curent is the one pohfch Plowg CovFnuctsly Athsoug, the biag Cereh of the deri ce

+ Kips> > Suefou_dawe cumend Noise AkeT Be RL Boe mang Cons fect = h3¢x1523 Te bs OuLE em beth = Mheve Ke 8 THis Noize =293kK Nhich ig lowe ae elucedd Using a load ban nici ee os ati Cons ahe ny ae Pestary Badge 7 Momo i 41. An ThG@ahs PIN photodiode , OF a Wovelengit, & j3, — e Les Folbwing- parameters BAA th guy 1 donm. Ty=4n4, y= 0°90, RF low a & Joce Pakage Ouse) I neglligé be - The Tatidenh ; fe ee Gaeta any eee barchndh iver terms q ite AES pap Prtmasy Photo Cred B= Ip= O9Eh 6 XIE IS 1g 66 es S343 0-230 2 Tsay >= IL4L Bez Qxher oY sé P CRP 8022 x16 ° xo * = ie AT stos> es \-34nA 4 vr Be 221? 2 Vp Bee 21616 Tx AXIEI KONE dD ae V5 gd = SEAN Ean Q. 16nA 7 * Mead. square Hegma) Deise Courceyd .- 2 22 LTT>2 A kelp ~ 4 630xi0 A293. oxi Comparision between common photo diode bearamedse x | 10 eth Waveleng hs: O-4-Deb lors org | O+b- O44 | — 6 lauantua fanaea) bf ciency WN yk. 1S-4o |Sso-cs |60-Fo Z 4: | Dask Qurrent L nA serena So-Boo | I-20 | | D bP §-| Band Widts B GH |o-3-06)05-3° | I-te TE] Brag Vv ae Me ltege B Vv So-wo}| S-to | 5-6 | el Liak te Vario) Sond BAS Symbo} Silica) St | Geren Thaahs t = pm oA—I-1 Lap 4 x -8- ne [re -It Pascumeler 5 &theis Velutex for SiGe & TaGahs makerials in the fabsi aie 9 phodi odes .

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