Semiconductor Electronics - Materials, Devices and Simple Circuits Case Study Based Questions Case Study 1 Consider a thin p-type silicon (p-Si) semiconductor wafer. By adding precisely a small pentavalent impurity, part of the p-Si wafer can be converted into n-Si. There are several processes by which a semiconductor can be formed. The wafer quantity of now contains p-region and n-region and a metallurgical junction between p and n- regions. Two important processes occur during the formation of a p-n junction: diffusion and drift. We know that in an n-type semiconductor, the concentration of electrons is more compared to the concentration of holes. Similarly, in a p-type semiconductor, the concentration of holes is more than the concentration of electrons. During the formation of p-n junction and due to the concentration gradient across p and n-sides, holes diffuse from p-side to n-side (p — n) and electrons diffuse from n-side to p-side (n — p). This motion of charge carriers gives rise to diffusion current across the junction Read the given passage carefully and give the answer of the following questions: Q1. How can a p-type semiconductor be converted into n-type semiconductor? a. By adding pentavalent impurity b. By adding trivalent impurity c. By not possible d. By heavy dopingQ2. Which of the following is true about n-type semiconductor? a. Concentration of electrons is less than that of holes. b. Concentration of electrons is more than that of holes. ¢. Concentration of electrons is equal to that of holes. d, None of the above Q3. Which of the following is true about p-type semiconductor? a. Concentration of electrons is less than that of holes. b. Concentration of electrons is more than that of holes. c. Concentration of electrons is equal to that of holes. d. None of the above Q4. Which of the following is the reason about diffusion current? a. Diffusion of holes from p ton b. Diffusion of electrons from n to p c, Both a. and b. d. None of the above Solutions 1. (a) By adding pentavalent impurity 2. (b) Concentration of electrons is more than that of holes. 3. (a) Concentration of electrons is less than that of holes. 4. (0) Both a. and b. Case Study 2 A semiconductor diode is basically a pn-junction with metallic contacts provided at the ends for the application of an external voltage. Itis a two terminal device. When an external voltage is applied across a semiconductor diode such that p-side is connected to the positive terminal of the battery and n-side to the negative terminal, itis said to be forward biased, When an external voltage is applied across the diode such that n-side is positive and p-side is negative, it is said to be reverse biased. Anideal diode is one whose resistance in forward biasing is zero and the resistance is infinite in reverse biasing, When the diode is forward biased, it is found that beyond forward voltage called knee voltage, the conductivity is very high. When the biasing voltage is more than the knee voltage, the potential barrier is overcome and the current increases rapidly with increase in forward voltage. When the diode is reverse biased, the reverse bias voltage produces a very small current about a few microamperes which almost remains constant with bias. This small current is reverse saturation current. Read the given passage carefully and give the answer of the following questions: Q1. In the given figure, a diode D is connected to an external resistance R = 100 0 and an emf of 3.5 V. If the barrier potential developed across the diode is 0.5 V, the current in the circuit will be: 2 1000 R | 35V a.40 mA b. 20 mA c.35mA d.30mA 2. Inwhich of the following figures, the pn diode is reverse biased? -12V a R b Vv +5V ~10V R c d. +5V R Q3. Based on the V-/ characteristics of the diode, we can classify diode as: a. bilateral device b. ohmic device c.non-ohmic device d, passive elementOR ‘Two identical pn-junctions can be connected in series by three different methods as shown in the figure. If the potential difference in the junctions is the same, then the correct connections will be PL }-{nfpy Pla} {Py a) n]p} {pp LILI 1 2 3 a. in the circuits (1) and (2) b. in the circuits (2) and (3) in the circuits (1) and (3) d. only in the circuit (1) a4. I(inmA) (in mA) The V-I characteristic of a diode is shown in the figure. The ratio of the resistance of the diode at / = 15 mA to the resistance at V = -10 Vis: (CBSE SQP 2023-24) a. 100 b. 10° 10 d. 10% Solutions 1. (d) The potential difference across the resistance R is D 1002 V=35V-O5V=3V Dt By ohms law, <—0.5V—r<-v->} The current in the circuit, =“ 3Y 3x07 A 1H R 1002 35V= 30x 103A =30mA +5V 2. (9 7 3. (c) non-ohmic device OR (b) in the circuits (2) and (3) 4. (d) From the given curve, we have V=08 V for current /= 20 mA and V=0.7 V for current |= 10 mA Resistance at != 15 mA Al= (20-10) mA=10 x 107A and AV=(0.8-07)=01V Thus p-AV__91 _ing Al 10x 107 Resistance at V =~ 10 V: J=-1pA=-1x10°8A 10 10x10" 2 1x10" «- Ratio of resistance -__10__jg-s 1.0x107 Case Study 3 Asilicon p-n junction diode is connected to a resistor R and a battery of voltage Vs through milliampere (mA) as shown in figure. The knee voltage for this junction diode is Vw=0.7 V. The p-n junction diode requires a minimum current of 1 mA to attain a value higher than the knee point on the V-I characteristics of this junction diode. ‘Assuming that the voltage V across the junction is independent of the current above the knee point. A p-n junction is the basic building block of many semiconductors, devices like diodes. Important process occurring during the formation of a p-n junction are diffusion and drift. In an n-type semiconductor concentration of electrons is more as compared to holes. in a p-type semiconductor, concentration of holes is more as compared to electrons.p-n junction diode Read the given passage carefully and give the answer of the following questions: Q1. If Ve =5 V, then what will be the maximum value of R so that the voltage Vis above the knee point voltage? Q2. If Ve=5 V, then what will be the value of R in order to establish a current to 6 mA in the circuit? Q3. When the diode is reverse biased with a voltage of 6 V and Vi = 0.63 V, calculate the total potential. Q4. If Ve =6 V, then calculate the power dissipated in the resistor R, when a current of 6 mA flows in the circuit. Solutions 1. Voltage drop across R, Vp = Va—- Vy=5-0.7=43V Given, —Inin= 1x 1077 A Maximum value of resistance, 43 ein ln =43 «10? =43 ka mA=6 x 103A; Vp = Va-Vy=5-0.7=43V Vp 43 ' 6x10? 3. Total potential, V,= V,;+ Vp=0.63 + 6 = 6.63 V 4. Given, Vp = GV; Vy= 0.7V. Vp=6 -0.7=5.3V Power dissipated, P= 1x Vp = (6 x 107°) x 5.3 = 318 x 10? W=318 mw 2. Given, R= =7179Case Study 4 Rectifier is a device which is used for converting alternating current or voltage into direct current or voltage. Its working is based on the fact that the resistance of p-n junction becomes low when forward biased and becomes high when reverse biased. Ahalf wave rectifier uses only a single diode while a full wave rectifier uses two diodes as shown in figures (a) and (b). Input | Vo (a) Half wave rectifier Input | ¢ z Dt (b) Full wave rectifier Dt Output voltage V, —S Read the given passage carefully and give the answer of the following questions: Q1. If the rms value of sinusoidal input to a full wave Ve rectifier is 2 then what is the rms value of the rectifier’s output? Q2. When an input of frequency 200 Hz is fed at input, what will be the ratio of output frequencies of half wave rectifier and full wave rectifier? Q3. A p-n junction diode is shown in figure can act as a rectifier. An alternating voltage source (V) is connected in the circuit. Show the waveform of current (/) in the resistor (R). vO R Q4. What will be the fundamental ripple frequency in a half wave rectifier circuit operating from 50 Hz mains frequency?Solutions 1. The rms value of the output voltage at the load resistance, \ 7 Yims = 5 In full wave rectifier, the whole cycle is rectified so the value of input voltage will be same as output 2. Output frequency of full wave rectifier is twice the output frequency of half wave rectifier. Hence, Frequency of half wave rectifier _1 Frequency of full wave rectifier 2 3. The given circuit works as a half wave rectifier. In this circuit, we will get current through R when p-n junction diode is forward biased and no current flow when p-n junction diode is reverse biased. Thus, the current (/) through resistor (R) will be shown in the waveform. Da, t 4. As the output voltage obtained in a half wave rectifier, circuit has a single variation in one cycle of AC voltage, hence the fundamental frequency in the ripple of output voltage would be 50 Hz.Solutions for Questions 5 to 14 are Given Below Case Study 5 Biasing of Diode When the diode is forward biased, it is found that beyond forward voltage V = V,, called knee voltage, the conductivity is very high. At this value of battery biasing for p-n junction,the potential barrier is overcome and the current increases rapidly with increase in forward voltage. When the diode is reverse biased, the reverse bias voltage produces a very small current about a few microamperes which almost remains constant with bias. This small current is reverse saturation current. (i) In which of the following figures, the p-n diode is forward biased. av oy oy @ ) © @ a mW (ii) Based on the V-1 characteristics of the diode, we can classify diode as (a) bi-directional device (b) ohmic device (©) non-ohmic device (d) passive element (iii) ‘The V-I characteristic of a diode is shown in the figure. ‘The ratio of forward to reverse bias resistance is Ta 07 08 Waly (a) 100 (b) 10° (© 10 (d) 10°(iv) In the case of forward biasing of a p-n junction diode, which one of the following figures correctly depicts the direction of conventional current (indicated by an arrow mark)? @ es) ) learn © ee} (v) Ifan ideal junction diode is connected as shown, then the value of the current I is Ww Se PE (@) 0.013 (b) 0.02 (© 001A (@) 01 Case Study 6 Rectifier Rectifier is a device which is used for converting alternating current or voltage into direct current or voltage. Its working is based on the fact that the resistance of p-n junction becomes low when forward biased and becomes high when reverse biased. A half-wave rectifier uses only a single diode while a full wave rectifier uses two diodes as shown in figures (a) and (b). TF Supa tage oy bee ot Eee Dt (2) Hal wave rectifier (b) Fall wave rectifier Y (i) If the rms value of sinusoidal input to a full wave rectifier is £ then the rms value of the rectifier’s output is i? ve 7 (a) E (b) b © % @ v2ve (ii) In the diagram, the input ac is across the terminals A and C. The output across B and Dis z (a) same asthe input (b) half wave rectified (c) zero (d) full wave rectified (iii) A bridge rectifier is shown in figure. Alternating input is given across A and C. If output is taken across BD, then it is 8 (a) zero (b) same as input (©) half wave rectified (d) full wave rectified(iv) A p-n junction (D) shown in the figure can act as a rectifier. An alternating current source (V) is connected in the circuit. The current({) in the resistor(R) can be shown by of @ || ) ‘I wo ‘| C) (v) With an ac input from 50 Hz power line, the ripple frequency is (a) 50 Hz in the de output of half wave as well as full wave rectifier ()) 100 Hz in thedc output of half wave as well as full wave rectifier (©) 50H in the de output of half wave and 100 Fiz in dc output of full wave rectifier (d) 100 Hz in the de output of half wave and 50 Hz in the de output of full wave rectifier. Case Study 7 Energy Band Gap From Bohr's atomic model, we know that the electrons have well defined energy levels in an isolated atom. But due to interatomic interactions in a crystal, the electrons of the outer shells are forced to have energies different from those in isolated atoms. Each energy level splits into a number of energy levels forming a continuous band. ‘The gap between top of valence band and bottom of the conduction band in which no allowed energy levels for electrons can exist is called energy gap. Empty Filled (i) In an insulator energy band gap is (@) E,=0 (b) F< 3ev (© E>3ev (a) None of the above (ii) In a semiconductor, separation between conduction and valence band is of the order of (a) Oev (b) Lev (©) lev (d) S0eV (iii) Based on the band theory of conductors, insulators and semiconductors, the forbidden gap is smallest in (a) conductors (b) insulators (©) semiconductors (4) All of these iv) Carbon, silicon and germanium have four valence electrons each. At room temperature which one of the following statements is most appropriate ? (a) ‘The number of free electrons for conduction is significant only in Si and Ge but small in C. (b) The number of free conduction electrons is significant in C but small in Si and Ge. (©) The number of free conduction electrons is negligibly small in all the three. (d) The number of free electrons for conduction is significant in all the three. (v) Solids having highest energy level partially filled with electrons are (a) semiconductor (b) conductor (© insulator (d) none of theseCase Study 8 Light Emitting Diode (LED) Light emitting diode is a photoelectric device which converts electrical energy into light energy. It is a heavily doped p-n junction diode which under forward biased emits spontaneous radiation. The general shape of the LV characteristics of an LED is similar to that ofa normal p-n junction diode, as shown. ‘The barrier potentials (mA) Forward current (i) The I-V characteristic of an LED is sof? f&gé v lo te 7 1 4 @ ¥. © © x @ iM 1 5 at 7 oI ¥ a v ‘The schematic symbol of light emitting diode is (LED) n ‘Anode Anode Anode p 2 p e (a) ‘© () e © @ Cathode Cathode Cathode ‘Cathode (iii) An LED is constructed from a p-n junction based on a certain Ga-As-P semiconducting material whose energy gap is 1.9 eV. Identify the colour of the emitted light. (a) Blue (b) Red (©) Violet (d) Green (iv) Which one of the following statement is not correct in the case of light emitting diodes? (a) Itisa heavily doped p-n junction. (b) It emits light only when itis forward biased (c)_ Itemits light only when it is reverse biased. (d) ‘The energy of the light emitted is less than the energy gap of the semiconductor used. (v) The energy of radiation emitted by LED is (a) greater than the band gap of the semiconductor used (b) always less than the band gap of the semiconductor used (©) always equal to the band gap of the semiconductor used (d) equal to or less than the band gap of the semiconductor used.Case Study 9 Photodiode A photodiode is an optoelectronic device in which current carriers are generated by photons through photo- excitation ie, photo conduction by light. It is a p-n junction fabricated from a photosensitive semiconductor and provided with a transparent window-so as allow light to fall on its function. A photodiode can turn its current ON and OFF in nanoseconds. So, it can be used as a fastest photo-detector. hn, Anode ‘Cathode Pn (i) A.p-n photodiode is fabricated from a semiconductor with a band gap of 2.5 eV. It can detect a signal of wavelength (a) 4000nm (b) 6000 nm (©) 4000 A (d) 6000 (ii) Three photo diodes D,, D, and D, are made of semiconductors having band gap of 2.5 eV, 2 eV and 3 eV, respectively. Which one will be able to detect light of wavelength 6000 A? (a) D, (b) D, (©) Dy (@) D, and D, both (ili) Photodiode is a device (a) which is always operated in reverse bias (b) which of always operated in forward bias (©) in which photo current is independent of intensity of incident radiation (d) which may be operated in forward or reverse bias. (iv) To detect light of wavelength 500 nm, the photodiode must be fabricated from a semiconductor of minimum bandwidth of (a) 1.24ev (b) 0.62 ev (Q) 248eV (d) 3.2eV (v) Photodiode can be used as a photodetector to detect (a) optical signals (b) electrical signals (c) both (a) and(b) —_()_ none of these Case Study 10 p-n Junction Diode A silicon p-n junction diode is connected to a resistor Randa battery of voltage Vz through milliammeter (mA) as shown in figure. The knee voltage for this junction diode is Vy = 0.7 V. The p-n junction diode requires a minimum current of 1 mA to attain a value higher than the knee point on the J-V characteristics of this junction diode. Assuming that the voltage V across the junction is independent of the current above the knee point. Ap-njunction isthe basic buildingblock of many semiconductor devices like diodes. Important process occurring during the formation of a p-n junction are diffusion and drift. In an n-type semiconductor concentration of electrons is more as compared to holes. In a p-type semiconductor concentration of holes is more as compared to electrons.(If Vg=5 V; the maximum value of R so that the voltage V is above the knee point voltage is (a) 40kQ (b) 43kQ (© 50kQ (@) 5.7kQ (ii) If Vp =5 V, the value of R in order to establish a current to 6 mA in the cireuil'is (a) 8339 (b) 717 (© 9502 (d) 733. (iil) If Vp = 6 V, the power dissipated in the resistor R, when a-current of 6 mA flows in the circuit is (a) 30.2mw (b) 30.8 mw (© 312mw (@) 31.8mW (iv) When the diode is reverse biased with a voltage of 6 V and V;, = 0.63 V. Calculate the total potential. (@) 927 (b) 6.63.V (© 527 (@) 0.63V (v) Which of the below mentioned’statement is false regarding a p-n junction diode? (a) Diodes are uncontrolled devices. (b) Diodes are rectifying devices. (©) Diodes are unidirectional devices. () Diodes have three terminals. Case Study 11 Electron Mobility ‘The electron mobility characterises how quickly an electron can move through a metal of semiconductor when pulled by an electric field, There is an analogous quality for holes, called hole mobility. A block of pure silicon at 300 K has a length of 10 cm and an area of 1.0 cm?, A battery of emf2 V is connected across it. The mobility of electron is 0.14 m? V-! s“' and their number density is 1.5 x 10'° m™*. The mobility of holes is 0.05 m* V's"! (i) The electron current is (a) 672x 104A (b) 6.72 x 105A (©) 6.72x 10° A (d) 672x107 A (ii) ‘The hole current is (a) 20x 107A (b) 22x 107A (©) 24x 107A (d) 2.6% 107A (iii) The number density of donor atoms which are to be added up to pure silicon semiconductor to produce an n-type semiconductor of conductivity 6.4 Q-' cm! is approximately (neglect the contribution of holes to conductivity) (a) 3x10" m? (b) 3x 10% m? (©) 3x10%m? (d) 3x10" m? (iv) When the given silicon semiconductor is doped with indium, the hole concentration increases to 4.5 x 10° m™. The electron concentration in doped silicon is (a) 3x10? m? (b) 4x 10° m? (©) 5x 10° m> (d) 6x 10° m> (¥) Pick out the statement which is not correct. (a) Ata low temperature, the resistance of a semiconductor is very high. (b) Movement of holes is restricted to the valence band only. (©) Width of the depletion region increases as the forward bias voltage increases in case of a p-n junction diode. (@) Ina forward bias condition, the diode heavily conducts. Case Study 12 Doping in Semiconductor ‘p-n junction is a single crystal of Ge or Si doped in such a manner that one half portion of it acts as p-type semiconductor and other half functions as n-type semiconductor. As soon as a p-n junction is formed, the holesfrom the p-region diffuse into the n-region and electron from n region diffuse in to p-region. ‘This results in the development of Vp across the junction which opposes the further diffusion of electrons and holes through the junction. (i) In an unbiased p-n junction electrons diffuse from n-region to p-region because (a)_holes in p-region attract them (b) electrons travel across the junction due to potential difference (c) electron concentration in n-region is moreas compared to that in p-region (@) only electrons move from.» to p region and not the vice-versa (ii) Electron hole recombination in p-n junction may lead to emission of (a) light (b) ultraviolet rays (© sound (d) radioactive rays 4) Tn an unbiased p-n junction (a)_ potential at p is equal to that at (b) potential at p is +ve and that at nis ve (c)_ potential at p is more than that at n (d) potential at p is less than that at n. (iv) The potential of depletion layer is due to (a) electrons (b) holes (©) ions (d) forbidden band (v) In the depletion layer of unbiased p-n junction, (a) itis devoid of charge carriers (b) has only electrons (©) has only holes (@)_p-n junction has a weak electric field. Case Study 13 Potential Barrier ‘The potential barrier in the p-n junction diode is the barrier in which the charge recquires additional force for crossing the region. In other words, the barrier in which the charge carrier stopped by the obstructive force is known as the potential barrier. When a p-type semiconductor is brought into a close contact with n-type semiconductor, we get a p-n junction with a barrier potential 0.4 V and width of depletion region is 4.0 x 10-7 m. This p-n junction is forward biased with a battery of voltage 3V and negligible internal resistance, in series with a resistor of resistance R, ideal millimeter and key K as shown in figure. When key is pressed, a current of 20 mA passes through the diode. (a) Ai)“ w (CK (i) ‘The intersity of the electric field in the depletion region when p-n junction is unbiased is (a) 05x 10°V mt (b) 1.0 x 10°Vmt (©) 20x10°Vm! — (d) 15x 10°Vm! (ii) ‘The resistance of resistor R is (a) 1502 (b) 3002 (©) 1302 (d) 1802 (iii) In a p-n junction, the potential barrier is due to the charges on either side of the junction, these charges are (a) majority carriers (b) minority carriers (c)_ both (a) and (b) (d) fixed donor and acceptor ions.(iv) If the voltage of the potential barrier is Vg. A voltage V is applied to the input, at what moment will the barrier disappear? (a) V< Vy (b) V=Vy (©) V>Vo (d) V<< Vy (v) Ifan electron with speed 4.0 x 10° ms“! approaches the p-n junction from the n-side, the speed with which it will enter the p-side is, (@) 139x10°mst (b) 2.78 x 10° mst (©) 139x10°mst — (d) 2.78x10° mst Case Study 14 Solar Cell Solar cell is a\p-n junction diode which converts solar energy into electric energy. It is basically a solar energy converter. The upper layer of solar cell is of p-type semiconductor and very thin so that the incident light photons may easily reach the p-n junction. On the top face of p-layer, the metal finger electrodes are prepared in order to have enough spacing between the fingers for the lights to reach the p-n junction through p-layer. (i) ‘The schematic symbol of solar cell is ‘Anode ‘Anode Anode Anode : , : el @) % ) > © © bathode bathode Cathode Cathode (ii) The p-n junction which generates an emf when solar radiations fall an it, with no external bias applied, isa (a) light emitting diode —(b)_ photodiode (c) solar cell (d) None of these (iii) For satellites the source of energy is (a) Solar cell (b) Fuel cell (©) Edison cell (d) None of these (iv) Which of the following material is used in solar cell? (a) Barium (b) Silicon (©) Silver (d) Selenium (v) The efficiency of a solar cell may be in the range (a) 2to5% (b) 10to 15% (©) 30 to 40% (d) 70 to 80% HINTS & EXPLANATIONS 5. (i) (©) : The p-n diode is forward biased when ‘Then, the ratio of forward to reverse bias resistance, ‘p-side is at a higher potential than n-side. R10 iyo (i) (©) R107 (1) (Foran Os feststances (iv) (d) : In p-region the direction of conventional = Fr =Gonoxio? r 10 current is same as flow of holes. In n-region the direction of conventional current is opposite to the flow of electrons.(v) (©) : In the given circuit the junction diode is forward biased and offers zero resistance. V-1V_ 2V =———=001A 2002 ~ 2002 6. (i) (a) :The rms value of the output voltage at ‘The current, I= the load resistance, (ii) (a) ( (iv) (cl: The given circuit works as a half wave rectifier. In this circuit, we will get current through Rwhen p-n junction is forward biased and no current when p-n junction is reverse biased. Thus the current (D through resistor (R) will be shown in option (c). WO 7. (i) (©): In insulator, energy band gap is > 3 eV (ii) (b) :In conductor, separation between conduction and valence bands is zero and in insulator, it is greater than 1 eV. Hence in semiconductor the separation between conduction and valence band is lev. Vo Vomne = + mp (a) (iii) (a): According to band theory the forbidden gap in conductors E, = 0, in insulators E, > 3 eV and in semiconductors E, <3 eV. (iv) (a): The four valence electrons of C, Si and Ge lie respectively in the second, third and fourth orbit. Hence energy required to take out an electron from these atoms (i.e. ionisation energy E,) will be least for Ge, followed by Si and highest for C. Hence, the number of free electrons for conduction in Ge and Si are significant but negligibly small for C. (y) () 8 (i) (b):The I-V characteristics of an LED is similar to that of aSi junction diode. But the threshold voltages are much higher and slightly different for each colour. (ii) (b) (iii) (b) :A8 By =* Here, E, m Hence, the emitted light is of red colour. (iv) (c): A light emitting diode is a heavily doped p-n junction diode which emits light only when it is forward biased. ™ @ 2 he _ 6.6107 x 3x 108 9, (1) (08 Raga == — E 25x1.6x10™ = 5000 A 1, =4000 A < inae (b) : Energy of incident photon, — =* The incident radiation can be detected by a photodiode if energy of incident photon is greater than the band gap. As D, = 2eV, therefore D, will detect these radiations. (iii) (a): Photodiode is a device which is always operated in reverse bias. (iv) (©) : Let E, be the required bandwidth. Then Here, hc = 1240 eV nm, 2. = 500 nm 1240eV nm '¢ =2.48eV 500 nm (v) (a):A photodiode is a device which is used to detect optical signals. 10. (i) (b) :Voltage drop across R. Va=Vp-Vy=5-0.7=43V Here, Imig = 1% 1079 A Vp _ 43 me Tin 1x10 6 mA =6x 107 A; 5-0.7=43V R, =43x10° Q =4.3kQ (ii) (b) = Va=Vp-V; pavR__ 43 1 6x10 =7172, (iii) (d) : Here, Vy = 6 V; Vy = 0.7 V, V_=6-0.7=5.3V Power dissipated in R= 1x Vp = (6 x 10°) x 5.3 = 31.8 x 10° W =31.8mW (iv) (b) = = Vi, + V_= 0.63 + 6 = 6.63 V(¥) (d) : Diode is two terminal device, anode and cathode are the two terminals. v_2 114, (i) (a): TO 20 Vim; A= 10cm? =1.0 x 104 m* BE = 0.14 x 20 = 2.8 ms" nAev, (1.5 x 10!) x (1.0 x 104) x (1.6% 10°!) x 2.8 6.72 107A (ii) (c): Ina pure semiconductor, 1.5 x 10'° mr uy, BE 1.0 ms Iya mpAevy, = (1.5 x 10!) x (1.0 x 10°) x (1.6 x 10°19) x 1.0 24x 107A (iii) (a) : 0 = engn, o 64x10 i, (6x10) x04 = 3.14 107 =3 x 107 m> 2 (iv) (Qi == ™, (v) (c):In case of a p-n junction diode, width of the depletion region decreases as the forward bias voltage increases. 42, (i) (©) :Electron concentration in n-region is more as compared to that in p-region. So electrons diffuse from n-side to p-side. (ii) (a): When an electron and a hole recombine, the energy is released in the form of light. (iii) (a): In an unbiased p-n junction, potential at p is equal to that at n. (iv) (©): The potential of depletion layer is due to ions. (¥) (a):In the depletion layer of unbiased p-n, junction has no charge carriers. p= VB d 13. (i) (b) (i) (c): Potential difference across = Resistance x Potential difference ‘Current 30 2 (iii) (d) (iv) (b) : When the voltage will be the same that of the potential barrier disappears resulting in flow of current. (vy) (as jm =eVp + hme = FxODIO (A105 610" (0.4) + «9.11003 On solving, we get vy = 1.39 x 105 ms 14. (i) (a) © (iii) (a): Solar cells are the source of energy for satellites. (iv) (b) : Silicon is used in solar cell. (v) (b) : 10 to 15%.