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Design of A Two Stage Amplifier Using ACM Model 1740375315

The document discusses the design of a two-stage amplifier using the ACM model, highlighting its advantages in simulating MOS transistors and providing accurate parameter extraction. It outlines amplifier specifications, parameter extraction for 65nm technology, and design calculations for different inversion levels. The results demonstrate the impact of inversion levels on gain, power dissipation, and response speed, concluding that the ACM model is effective for initial design approximations.

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Navarathna Lakshan
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18 views12 pages

Design of A Two Stage Amplifier Using ACM Model 1740375315

The document discusses the design of a two-stage amplifier using the ACM model, highlighting its advantages in simulating MOS transistors and providing accurate parameter extraction. It outlines amplifier specifications, parameter extraction for 65nm technology, and design calculations for different inversion levels. The results demonstrate the impact of inversion levels on gain, power dissipation, and response speed, concluding that the ACM model is effective for initial design approximations.

Uploaded by

Navarathna Lakshan
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
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Download as PDF, TXT or read online on Scribd
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Design of a two stage

amplifier using ACM


model

ECEN 607(ESS)
Courtesy of
Judy Amanour-Boadu
Contents
 ACM model
 Amplifier specifications
 Extraction of parameters
 Design of amplifier
 Simulation results
Why ACM model?
 Powerful tool for the simulation of MOS
transistors
 Simple, precise equations to extract
physical parameters
 Parameters describe effects particular to
newer small channel technologies
 Valid for the efficient design of analog
circuits
 Better match between simulations and
actual circuit performance
Amplifier Specifications

Specifications Value
Avo (DC gain) > 50 dB
GBW > 20 MHz
PM (Phase Margin) > 50o
SR (Slew Rate) > 1.7 V/us
CL 50pF
Cin <0.8 pF
In band noise (DC- <10μV
10MHz)
Supply 1V
Amplifier Specifications
 Boundary conditions
𝑔𝑚1
• = 𝐺𝐵𝑊 > 20 𝑀𝐻𝑧……....(1)
𝐶𝑐
𝐼𝑡𝑎𝑖𝑙 1.7𝑉
• = 𝑆𝑙𝑒𝑤 𝑅𝑎𝑡𝑒 > ……....(2)
𝐶𝑐 𝜇𝑠
16𝐾𝑇 𝑔𝑚
• 𝑉𝑒𝑞 2𝑖𝑛 ≅ 1 + 8 …….…(3)
3𝑔𝑚1 𝑔𝑚1
𝐺𝐵𝑊 𝐺𝐵𝑊 𝐺𝐵𝑊
• 𝑃𝑀 = 180 − 𝑡𝑎𝑛−1 − 𝑡𝑎𝑛−1 − 𝑡𝑎𝑛−1 ….(4)
𝑤𝑝1 𝑤𝑝2 𝑤𝑧1
1
• Cancel zero by using 𝑅𝑧 =
𝑔𝑚8
𝜋
• Assume phase contribution of 𝑤𝑝1 is about and 𝑓𝑝2 > 80𝑀𝐻𝑧(from
2
(4) and amplifier specifications for phase margin > 60o)
𝑔𝑚8
• = 𝑓𝑝2 ⇒ 𝑔𝑚8 > 1𝑚𝑆
𝐶𝐿
• From (1) 𝑔𝑚1 > 240µ𝑆
• From (3), 𝐼𝑡𝑎𝑖𝑙 > 8.5µ𝐴
Parameter extraction for design(65nm)

 Using [1], the following parameters can be extracted


Parameter NMOS(65nm) PMOS(65nm)
Is/nA 333.8 46.8
Vth0/V 0.4238 -0.349
Gamma/V1/2 0.207 0.293
Sigma/m2 21.12f 5.679p
PCLM 0.0409 0.159
μo /cm2/Vs 267.3 70.4
θ/ V-1 0.32 0.1995

[1] A.I.A. Cunha, Schneider, M.C.; Galup-Montoro C.; “An MOS transistor model for analog circuit design”. IEEE J.of Solid-State Circuits, Vol. 33, Issue 10, pp. 1510-1518, Oct.
1998.
Amplifier dimensions calculations
 Choose if = 0.5,assume 𝑔𝑚1,8 = 1.5𝑚𝑆
 Check intrinsic cutoff frequency of transistor at if =
0.5
𝜇∅𝑡
 𝑓𝑇 = 2 1 + 𝑖𝑓 − 1 = 51.5GHz ≫ 20MHz—(5)
2𝜋𝐿2
1+ 1+𝑖𝑓
 𝐼𝑑 = 𝑔𝑚 ∗ 𝑛 ∗ ∅𝑡 ≅ 50𝜇𝐴—(6)
2
𝑊 𝑔𝑚
 = −(7)
𝐿 𝜇𝐶𝑜𝑥 𝛷𝑡 (−1+ 1+𝑖𝑓 )
𝑊 𝑊
 (65𝑛𝑚) = 336 (65𝑛𝑚) = 1276
𝐿𝑁 𝐿𝑃
𝑉𝐷𝑆𝐴𝑇
 ≅ 1 + 𝑖𝑓 − 1 + 4 ⇒ 𝑉𝐷𝑆𝐴𝑇 ≅ 0.1𝑉
∅𝑡
Amplifier design (if=8)
 Choose if = 8,choose 𝑔𝑚1,8 = 1.5𝑚𝑆
 Check intrinsic cutoff frequency of
transistor at if = 8 using (5)
 𝑓𝑇 =130GH𝑧 ≫ 20MHz
 𝐼𝑑 ≅ 93𝜇𝐴
𝑊 𝑊
 (65𝑛𝑚) = 4; 65𝑛𝑚 = 16
𝐿𝑁 𝐿𝑃
 𝑉𝐷𝑆𝐴𝑇 ≅ 0.208𝑉
Amplifier design recap
 First extract transistor parameters using ACM model and
test benches
 First check if selected inversion level is adequate for your
design, this is done by calculating the ft of transistor, ft
>>3xGBW (5)
 Use extracted parameters to calculate required
transconductances, saturation voltage, dimensions based
on specifications given as a first trial point
 Bias your circuit properly and perform your simulations
 Calculated values of M1, M2, M8 kept the same producing
relative same gm at selected currents when ACM model is
used (1)-(6).
 Reevaluate operational points to obtain required
specifications
Example of results
Results
Parameter If=0.5 If=8
Gain (dB) 65 61
Phase margin (deg) 50 60
Power dissipation (µW) 409 558
Settling time (nsec) 180 130
PSRR (dB) 66.3 62.4
Slew rate (V/µsec) 8.4 17.3
Area estimation (µ2m2) 2400 100

• Smaller inversion level, larger area, slower


response, lower power consumption
• Moderated inversion level, smaller area, larger
power consumption, faster response
Conclusions
 ACM model effective in calculation of
design parameters
 Very good first approximation
 Not region of operation specific

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