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PYL102 Semiconductor Practice Prob

The document contains practice problems related to principles of electronic materials, focusing on semiconductor physics and calculations involving effective mass, Fermi levels, intrinsic carrier concentrations, and junction characteristics. It includes questions on mobility, conductivity, and the effects of temperature on semiconductor behavior. The problems require applying fundamental equations and concepts to determine various semiconductor parameters and characteristics.

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18 views3 pages

PYL102 Semiconductor Practice Prob

The document contains practice problems related to principles of electronic materials, focusing on semiconductor physics and calculations involving effective mass, Fermi levels, intrinsic carrier concentrations, and junction characteristics. It includes questions on mobility, conductivity, and the effects of temperature on semiconductor behavior. The problems require applying fundamental equations and concepts to determine various semiconductor parameters and characteristics.

Uploaded by

akshatbhasin666
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
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PYL-102: PRINCIPLES OF ELECT.

MATERIALS
Practice Problems

1. The effective mass of the hole is five times the effective mass of an electron. Calculate
the Fermi level position of a semiconductor with a bandgap of 0.7eV at room
temperature.
2. Relation between bandgap and temperature for Si is given by

Find a concentration of electrons in the conduction band of intrinsic (undoped) Si


at T = 77 K if at 300 K ni = 1.05 × 10^10 cm−3
3. The approximate value of p-n junction current under forward bias is given by I = I0
exp(eV/kBT). Show that the incremental resistance Re (= ΔV/ΔI) is inversely
proportional to current?

4. Using general equation for p, show that (dp/dE) is maximum in the valence band at Ev
– E = (kBT)/2.

5. The mobilities of electrons and holes in intrinsic Ge are 0.39 and 0.19 m2/V-s
respectively. Determine the intrinsic carrier concentration and conductivity of Ge at
300 K if the band gap of Ge is 0.67 eV and the effective masses of electrons and holes
are 0.55m0 and 0.37m0 respectively, m0 being the electronic rest mass. How many
dopants must be added per cubic metre of Ge to increase its conductivity by a factor of
104?

6. Show that the product of electron and hole concentrations in a semiconductor is


constant at a given temperature. How is the energy gap determined from the
measurement of electrical conductivity of a semiconductor?

7. The conductivity of a semiconductor changes when the concentration of electrons is


varied by changing the position of impurity level. Show that it passes through a
minimum when the concentration of electrons becomes ni √𝜇𝑝 ⁄𝜇𝑛 where ni is the
intrinsic carrier concentration, 𝜇𝑛 and 𝜇𝑝 represent the mobilities of electrons and holes
respectively. Determine the minimum value of conductivity.

8. Calculate the temperatures at which p-n junctions made with Si, Ge and GaN will lose
their rectifying characteristics.
Assume that, in all cases the acceptor and the donor concentration: Na = Nd = 1014 cm−3,
Eg are independent of the temperature and are 1.12, 0.66 and 3.44 eV for Si, Ge and
GaN, respectively.
Intrinsic carrier concentrations at room temperature are niGe = 2 × 1013, niSi = 1010, and
niGaN = 10−9 cm−3. The effective mass of the electron and holes for the three materials
are: (mn*= 1.18m0, mp*= 0.59m0) for Si, (mn*= 0.57m0, mp*= 0.37m0) for Ge and (mn*=
0.22m0, mp*= 0.61m0) for GaN, where m0 is the rest mass.

9. In a certain semiconductor, consider the following energy band diagram. Sample is


maintained at 300 K with Ei- EF= Eg/4 at x = ± L and EF-Ei = Eg/4 at x = 0. The notations
carry the usual meaning. Eg = 1.42 eV, ni=1010 cm-3, hole mobility: 400 cm2/V s

Red vertical lines are for eye guidance.


Besides, the electrostatic potential (V) inside the semiconductor as a function of x is
given by: (potential smoothly changes at ±L)

(i) Sketch the electric field inside the semiconductor as a function of x.


Hint: Ex=−(dV/dx) and there is no discontinuity at ±L.
(ii) Calculate the resistivity of the (x>L) portion of the semiconductor.
(iii) Identify whether the semiconductor is under equilibrium, or there is an external
electric field applied. justify.
(iv) Determine the electron and hole current density (Jn and Jp respectively) at x = ±L/2.

11. Find the built-in potential for a p-n Si junction at room temperature if the bulk
resistivity of Si is 5.5 Ω cm. Electron mobility in Si at RT is 1100 cm 2/Vs; µn/µp
= 3.1; ni = 1.4 × 1010 cm−3. Consider, at room temperature all donors and acceptors
are ionized.
Calculate the total depletion-layer width for applied bias voltages V = −5 V, 0,
and +0.1 V. Consider Si = 11.9.
12. A hole diffusion current of 7 mA is injected into an n-type silicon device of
cross-section 1 mm2 and the excess hole concentration falls off exponentially with
distance from the injecting contact. If the diffusion coefficient is 1.15 x 10-3 m2/s
and 0.3 mm from the contact the excess hole concentration is 23% of that at the
contact, calculate the excess hole concentration at the contact.

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