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Assignment 1 Basic Electronics Engineering

The document is an assignment for Basic Electronics Engineering (ES-201) with a submission date of 5/05/2025. It includes various problems related to semiconductor physics, pn junctions, diode characteristics, and circuit analysis, requiring calculations and plots based on given parameters and figures. The assignment covers topics such as current flow, junction capacitance, built-in potential, and I/V characteristics for different configurations of diodes.

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13 views

Assignment 1 Basic Electronics Engineering

The document is an assignment for Basic Electronics Engineering (ES-201) with a submission date of 5/05/2025. It includes various problems related to semiconductor physics, pn junctions, diode characteristics, and circuit analysis, requiring calculations and plots based on given parameters and figures. The assignment covers topics such as current flow, junction capacitance, built-in potential, and I/V characteristics for different configurations of diodes.

Uploaded by

uietbatch2
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
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Basic Electronics Engineering (ES-201)

Assignment -1 (Assignment submission date : 5/05/2025)

1. Figure 1 shows a p-type bar of silicon that is subjected to electron injection from the
left and hole injection from the right. The electron and hole profiles are “sharp”
exponentials, i.e., they fall to negligible values at x = 2 μm and x = 0, respectively.
Determine the total current flowing through the device if the cross section area is
equal to 1 μm × 1 μm.

Fig.1
2. A pn junction with ND = 3 × 10 cm−3 and NA = 2 × 1015 cm−3 experiences a reverse
16

bias voltage of 1.6 V.


(a) Determine the junction capacitance per unit area.
(b) By what factor should NA be increased to double the junction capacitance?
3. Due to a manufacturing error, the p-side of a pn junction has not been doped. If ND =
3 × 1016 cm−3, calculate the built-in potential at T = 300 K.
4. A junction employs ND = 5 × 1017 cm−3 and NA = 4 × 1016 cm−3.
(a) Determine the majority and minority carrier concentrations on both sides.
(b) Calculate the built-in potential at T = 250 K, 300 K, and 350 K. Explain the trend.
5. Figure 2 shows two diodes with reverse saturation currents of IS1 and IS2 placed in
parallel. (a) Prove that the parallel combination operates as an exponential device.
(b) If the total current is Itot, determine the current carried by each diode.

Fig.2
6. An oscillator application requires a variable capacitance with the characteristic shown
in Fig. 3. Determine NA and ND.

Fig. 3.
7. Consider a pn junction in forward bias. (a) To obtain a current of 1mAwith a voltage
of 750 mV, how should IS be chosen? (b) If the diode cross section area is now
doubled, what voltage yields a current of 1 mA?
8. Figure 4 shows two diodes with reverse saturation currents of IS1 and IS2 placed in
series. Calculate IB, VD1, and VD2 in terms of VB, IS1, and IS2.

Fig.4

9. In the circuit of Problem 8, we wish to increase IB by a factor of 10. What is the


required change in VB?

10. Consider the circuit shown in Fig. 5, where IS = 2 × 10−15 A. Calculate VD1 and IX for
VX = 0.5 V, 0.8V, 1V, and 1.2V. Note that VD1 changes little for VX ≥ 0.8V.

Fig. 5

11. We have received the circuit shown in Fig. 6 and wish to determine R1 and IS.We
note that VX = 1V → IX = 0.2mA and VX = 2V → IX = 0.5 mA. Calculate R1 and IS.

Fig. 6

12. Plot the I/V characteristic of the circuit shown in Fig. 7.


Fig. 7.

13. If the input in Fig.7 is expressed as VX = V0 cos ωt, plot the current flowing through
the circuit as a function of time.

14. Plot IX as a function of VX for the circuit shown in Fig.8 for two cases: VB = −1V and
VB = +1V.

Fig.8

15. If in Fig.8, VX = V0 cosωt, plot IX as a function of time for two cases: VB = −1V and
VB = +1V.

16. For the circuit depicted in Fig.9, plot IX as a function of VX for two cases: VB = −1V
and VB = +1V.

Fig.9

17. Plot IX and ID1 as a function of VX for the circuit shown in Fig. 10. Assume VB > 0.
Fig. 10

18. In the circuit of Fig. 11, plot IX and IR1 as a function of VX for two cases: VB = −1V
and VB = +1V.

Fig. 11

19. For the circuit depicted in Fig. 12, plot IX and IR1 as a function of VX for two cases:
VB = −1 V and VB = +1V.

Fig. 12

20. Plot the input/output characteristics of the circuits depicted in Fig. 13 using an ideal
model for the diodes. Assume VB = 2V

.
Fig. 13

21. Repeat Problem20 with a constant-voltage diode model.

22. If the input is given by Vin = V0 cos ωt, plot the output of each circuit in Fig. 13 as a
function of time. Assume an ideal diode model.

23. Plot the input/output characteristics of the circuits shown in Fig. 14 using an ideal
model for the diodes.

Fig. 14

24. Repeat Problem 23 with a constant voltage diode model.

25. Assuming the input is expressed as Vin = V0 cos ωt, plot the output of each circuit in
Fig. 14 as a function.

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