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Assignment 3

The document outlines the assignment for a course on BJTs and MOSFETs, detailing 25 questions that cover topics such as the construction and operation of BJTs, amplifier configurations, biasing techniques, and the hybrid-pi model. Each question is associated with specific learning outcomes and levels of cognitive understanding. The assignment requires both theoretical explanations and practical calculations related to electronic circuits.

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nithilasatheesh2005
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5 views

Assignment 3

The document outlines the assignment for a course on BJTs and MOSFETs, detailing 25 questions that cover topics such as the construction and operation of BJTs, amplifier configurations, biasing techniques, and the hybrid-pi model. Each question is associated with specific learning outcomes and levels of cognitive understanding. The assignment requires both theoretical explanations and practical calculations related to electronic circuits.

Uploaded by

nithilasatheesh2005
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
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Download as PDF, TXT or read online on Scribd
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Assignment 2 (EC for ME ME102)

(Course Instructor: Piyush Tewari, ECE, DTU) MM:100

1. Explain the construction of an NPN and PNP BJT. Draw the schematic symbols for
both types. [CO 1] [L2] [4]

2. Describe the basic operation of a BJT in the active region. How do majority and
minority carriers contribute to the current flow? [CO 1] [L2] [4]

3. What are the three regions of operation in a BJT? Explain the conditions required for
each region. [CO 1] [L2] [4]

4. Compare the input and output characteristics of a BJT in the Common Emitter (CE)
and Common Base (CB) configurations. [CO 1] [L4] [4]

5. Why is the Common Emitter (CE) configuration the most widely used in amplifier
circuits? Explain with relevant characteristics. [CO 1] [L2] [4]

6. What is the purpose of DC biasing in a BJT amplifier? Explain the concept of the
operating point (Q-point). [CO 1] [L2] [4]

7. Draw the load line for a BJT amplifier circuit. How is the Q-point determined using the
load line? [CO 1] [L3] [4]

8. Explain the significance of the Q-point in ensuring proper amplification without


distortion. [CO 1] [L2] [4]

9. What are the disadvantages of the fixed-bias circuit? How does the voltage divider bias
circuit overcome these limitations? [CO 1] [L4] [4]

10. Compare the stability of the Q-point in fixed-bias and voltage divider bias circuits. [CO
1] [L4] [4]

11. What is the role of feedback resistors in voltage divider bias circuits? How do they
improve stability? [CO 1] [L2] [4]

12. Explain the concept of thermal runaway in BJTs. How can it be prevented in biasing
circuits? [CO 1] [L2] [4]

13. What is the significance of the Early effect in BJTs? How does it affect the output
characteristics? [CO 1] [L2] [4]

14. Compare the construction and operation of Depletion-Type MOSFET and


Enhancement-Type MOSFET. Draw their schematic symbol and transfer
characteristics. [CO 1] [L4] [4]

15. Draw the output characteristics 𝐼𝐷 vs 𝑉𝐷𝑆 of an Enhancement-Type MOSFET. Explain


the significance of the ohmic, saturation, and cutoff regions. [CO 1] [L3] [4]

16. What is the significance of the threshold voltage 𝑉𝑇𝐻 in an Enhancement-Type


MOSFET? How does it affect the biasing? [CO 1] [L2] [4]
17. What is the hybrid-pi model of a BJT? Draw the small-signal equivalent circuit and
explain the significance of each component. [CO 2] [L3] [4]

18. Define transconductance 𝑔𝑚 and small-signal input resistance 𝑟𝜋 . How are they related
to the DC bias conditions of the BJT? [CO 2] [L2] [4]

19. Derive the expressions for voltage gain 𝐴𝑣 , input impedance 𝑍𝑖𝑛 , and output impedance
𝑍𝑜𝑢𝑡 of a CE amplifier using the hybrid-pi model. [CO 2] [L3] [4]

20. Illustrate the effect of the bypass capacitor 𝐶𝐸 on the voltage gain of a npn CE BJT
amplifier. [CO 2] [L4] [4]

21. For a fixed-bias BJT circuit,𝑅𝐵 = 470 𝑘Ω , 𝑅𝐶 = 2.2 𝑘Ω , 𝛽 = 150, and 𝑉𝐶𝐶 = 12 𝑉 .
Calculate 𝐼𝐵 , 𝐼𝐶 and 𝑉𝐶𝐸 . [CO 2] [L3] [4]

22. For a voltage divider bias circuit, 𝑅1 = 10 , 𝑅2 = 2.2 𝑘Ω, 𝑅𝐶 = 3.3 𝑘Ω, 𝑅𝐸 =
1 𝑘Ω, 𝛽 = 200 and 𝑉𝐶𝐶 = 15 𝑉 . Calculate 𝐼𝐵 , 𝐼𝐶 and 𝑉𝐶𝐸 . [CO 2] [L3] [4]

23. A CE amplifier has the following parameters: 𝑅𝐶 = 4.7 𝑘Ω , 𝑅𝐸 = 1 𝑘Ω , 𝛽 = 100,


and 𝑉𝐶𝐶 = 12 𝑉 . Calculate the voltage gain and input impedance. [CO 2] [L3] [4]

24. A CE amplifier has 𝑅𝐶 = 3.3 𝑘Ω , 𝑅𝐸 = 1 𝑘Ω , 𝑔𝑚 = 50 𝑚𝑆, and 𝑟𝜋 = 2.5 𝑘Ω .


Calculate the voltage gain and input impedance if the emitter resistor is bypassed by a
capacitor. [CO 2] [L3] [4]

25. Illustrate the significance of the Early effect in the hybrid-pi model. How is it
represented in the small-signal equivalent circuit? [CO 2] [L4] [4]

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