Exp.
2 - To Study Dicing and Semiconductor Device
Packaging
Aman Kumar
April 30, 2025
Introduction
This laboratory manual provides detailed procedures for experiments related to dicing
and semiconductor device packaging in Very Large Scale Integration (VLSI) processes.
The experiments are designed to familiarize students with the techniques used in wafer
dicing and packaging, critical steps in semiconductor manufacturing.
Safety Guidelines
• Wear appropriate personal protective equipment (PPE), including lab coats, safety
goggles, and gloves.
• Handle chemicals and equipment with care, following all operational protocols.
• Ensure proper ventilation when working with adhesives or solvents.
• Report any equipment malfunctions or spills immediately.
1 Wafer Dicing
Objective
To understand and perform wafer dicing using a dicing saw to separate semiconductor
dies from a silicon wafer.
Equipment
• Dicing saw (e.g., Disco DFD6341)
• Silicon wafer (4-inch, pre-patterned)
• Dicing tape
• Deionized (DI) water
• Wafer frame
• Microscope for inspection
1
Exp. 2 - To Study Dicing and Semiconductor Device Packaging 2
Procedure
1. Preparation:
• Clean the wafer using DI water and dry with nitrogen gas.
• Mount the wafer onto dicing tape and secure it in a wafer frame.
2. Dicing Setup:
• Load the wafer frame into the dicing saw.
• Set the blade height and cutting speed (e.g., 30,000 RPM, 20 mm/s feed rate).
• Align the wafer using the saw’s optical alignment system to follow scribe lines.
3. Dicing Process:
• Start the dicing process, ensuring continuous water flow for cooling and debris
removal.
• Cut along predefined scribe lines to separate dies.
4. Post-Dicing:
• Remove the wafer frame and inspect dies under a microscope for chipping or
cracks.
• Clean the dies with DI water and dry them.
Observations
• Note the quality of the cut edges (e.g., smoothness, presence of chipping).
• Record the dimensions of the separated dies.
Precautions
• Ensure the dicing blade is sharp to avoid excessive chipping.
• Monitor water flow to prevent overheating.
2 Die Bonding
Objective
To perform die bonding by attaching a semiconductor die to a substrate or lead frame
using adhesive.
Exp. 2 - To Study Dicing and Semiconductor Device Packaging 3
Equipment
• Die bonder (e.g., ESEC 2008)
• Semiconductor dies (from Experiment 1)
• Substrate or lead frame
• Epoxy adhesive (e.g., silver-filled epoxy)
• Curing oven
• Microscope
Procedure
1. Preparation:
• Clean the substrate/lead frame with isopropyl alcohol and dry it.
• Inspect dies for defects under a microscope.
2. Adhesive Application:
• Dispense a controlled amount of epoxy adhesive onto the substrate using the
die bonder’s dispenser.
3. Die Placement:
• Use the die bonder’s pick-and-place tool to position the die onto the adhesive.
• Apply gentle pressure to ensure good contact.
4. Curing:
• Place the substrate in a curing oven at 150°C for 30 minutes to cure the
adhesive.
5. Inspection:
• Inspect the bonded die under a microscope for alignment and adhesive spread.
Observations
• Check for voids or excess adhesive around the die.
• Verify die alignment and bonding strength.
Precautions
• Avoid excessive adhesive to prevent overflow.
• Ensure proper curing to achieve strong bonding.
Exp. 2 - To Study Dicing and Semiconductor Device Packaging 4
3 Wire Bonding
Objective
To connect the semiconductor die to the package leads using wire bonding.
Equipment
• Wire bonder (e.g., Kulicke Soffa 4524)
• Gold or aluminum wire (25 µm diameter)
• Bonded dies (from Experiment 2)
• Microscope
Procedure
1. Setup:
• Load the substrate with the bonded die into the wire bonder.
• Set bonding parameters (e.g., ultrasonic power, bonding force).
2. Wire Bonding:
• Use the bonder to attach the wire from the die’s bond pads to the substrate’s
leads.
• Form ball bonds on the die and wedge bonds on the leads.
3. Inspection:
• Inspect the bonds under a microscope for strength and alignment.
• Perform a pull test to verify bond integrity.
Observations
• Record the number of successful bonds and any failures.
• Note the bond shape and wire loop height.
Precautions
• Ensure clean bond pads to avoid weak bonds.
• Adjust bonding parameters to prevent damage to the die.
4 Encapsulation
Objective
To encapsulate the bonded die and wires to protect them from environmental factors.
Exp. 2 - To Study Dicing and Semiconductor Device Packaging 5
Equipment
• Molding machine
• Epoxy molding compound
• Wire-bonded assembly (from Experiment 3)
• Curing oven
Procedure
1. Preparation:
• Preheat the molding compound to 175°C.
• Place the wire-bonded assembly into the mold cavity.
2. Molding:
• Inject the molten epoxy compound into the mold under pressure.
• Allow the mold to cool for 5 minutes.
3. Curing:
• Remove the encapsulated package and cure it in an oven at 175°C for 4 hours.
4. Inspection:
• Check for voids or incomplete filling in the encapsulation.
Observations
• Verify the integrity of the encapsulation.
• Check for any damage to wires or die during molding.
Precautions
• Ensure proper mold alignment to avoid flash.
• Control molding pressure to prevent wire sweep.
Conclusion
These experiments provide hands-on experience with key VLSI packaging processes, in-
cluding wafer dicing, die bonding, wire bonding, and encapsulation. Students should gain
an understanding of the equipment, techniques, and challenges involved in semiconductor
packaging.
