TYPES OF TRANSISTOR THE FIRST TRANSISTOR

• bipolar junction transistor • In 1947, John Bardeen and Walter Brattain

• unipolar junction transistor devised the first "point contact" transistor.
• field effect transistor
• metal oxide semiconductor TRANSISTOR
• an electronic device made of three layers of
APPLICATIONS OF SCHOTTKY DIODE semiconductor material that can act as an
• Switching Power Supplies insulator and a conductor.
• High Frequency Switching Applications • The three-layered transistor is also known as
• Low-Voltage High-Current the bipolar junction transistor
• AC to DC Converters
• Communication Equipment TRANSISTOR STRUCTURE
• Instrumentation Circuits • A transistor has three doped regions.
• For both types, the base is a narrow region
TYPES OF IR SENSOR sandwiched between the larger collector and
• Passive Infrared Sensor emitter regions.
• Reflective Sensor • The emitter region is heavily doped and its job
• Transmissive Sensor is to emit carriers into the base.
• Proximity Sensor • The base region is very thin and lightly doped.
• Temperature Sensor • Most of the current carriers injected into the
• Spectroscopy Sensor base pass on to the collector.
• Imaging sensor • The collector region is moderately doped and
is the largest of all three regions.
ADVANTAGES OF SEMICONDUCTOR TRANSISTOR
• smaller size TRANSISTOR CONSTRUCTION
• lightweight • BJT is bipolar because both holes (+) and
• rugged electrons (-) will take part in the current flow
• efficient through the device
• no warm-up period • N-type regions contain free electrons
• no heater requirement (negative carriers)
• lower operating voltages • P-type regions contain free holes (positive
carriers)
REGION OF OPERATION OF BJT • 2 types of BJT
• Linear – NPN transistor
• saturation – PNP transistor
• cutoff • The transistor regions are:
– Emitter (E)
APPLICATION OF TUNNEL DIODE – send the carriers into the base region
• High frequency circuits and then on to the collector
• Oscillators – Base (B)
• Switching networks – acts as a control region. It can allow
• Pulse generators none, some, or many carriers to flow
• Amplifiers – Collector (C)
– collects the carriers
 TRANSISTOR OPERATING REGIONS
• ACTIVE – Operating range of the amplifier
o Active Mode Base- Emitter junction is
forward and Base-Collector junction is
reverse biased.
• CUTOFF – The amplifier is basically off. There is
voltage, but little current.
o Cut-off Mode - Both junctions are reverse-
biased
• SATURATION – The amplifier is full on. There is
current, but little voltage
o Saturation Mode Base- Emitter junction is
forward and Base-Collector junction is
forward biased

ADVANTAGES OF TRANSISTORS OVER VACUUM

TUBES
• Smaller and lightweight
• Has no heater requirement or heater loss
• Has rugged construction
• It is more efficient since less power is
absorbed by the device
NPN TRANSISTOR STRUCTURE • It is instantly available for use, requiring no
warm-up period
The collector is lightly doped. • Low operating voltages are possible

The base is thin and is lightly doped.

REASON FOR BIASING
The emitter is heavily doped. • To turn on the device
• To place it in operation of its characteristic
where the device operates mast linearly.
TRANSISTOR BIASING
• The base-emitter (BE) junction is forward- TYPES OF BIAS CIRCUITS
biased • Fixed bias
• The base-collector (BC) junction is reverse- • Self-bias
biased. • Signal Bias

TRANSISTOR CONFIGURATION
• A transistor can be connected in a circuit in

CURRENTS IN A TRANSISTOR the following three ways:

• Emitter current is the sum of the collector and 1) Common Base

base currents: 2) Common Emitter

3) Common Collector

• The collector current is comprised of two

currents:
COMPARISON OF AMPLIFIER CONFIGURATIONS ii) npn transistor
• In each transistor following points are to be
noted
i) There are two junctions, so the transistor
can be considered as two diodes
connected back to back.
ii) There are three terminals.
TRANSISTOR AS AN AMPLIFIER iii)The middle section is thinner than other.
• Amplification is the process of linearly
increasing the amplitude of an electrical TRANSISTOR SYMBOL
signal and is one of the properties of a
transistor.
• A transistor amplifies current because the
collector current is equal to the base current
multiplied by the current gain.
• The base current in s transistor is very small
compared to the collector and emitter • Transistor has three section of doped
currents. semiconductor.
• Because of this the collector current is • The section on one side is called “emitter” and
approximately equal to the emitter current. the opposite side is called “collector”.
• Audio Signal is the electrical signal which is • The middle section is called “base”.
from human voice to an electrical signal.
• Since the component used in amplifying 1. EMITTER
signal is electronics and electronics is a device • The section of one side that supplies
operated in electrical source, audio signal carriers is called the emitter.
must be converted to electrical signal. • The emitter is always forward-biased with
respect to the base so it can supply
carriers.
• For “npn transistor,” emitter supply holes to
its junction.
• For “pnp transistor,” the emitter supplies
electrons to its junction.
2. COLLECTOR
• The section on the other side that collects
TRANSISTOR TYPES the carrier is called a collector.
• BJT - Bipolar Junction Transistor • The collector is always reverse-biased
• UJT - Unipolar Junction Transistor biased respect to the base.
• FET - Field-Effect Transistor • For “npn transistor,” the collector receives
• MOS - Metal Oxide Semiconductor holes to its junction.
• For “pnp transistor,” the collector receives
BIPOLAR JUNCTION TRANSISTORS electrons at its junction.
• The transistor is a three-layer semiconductor 3. BASE
device consisting of either two n-type and one • The middle section, which forms two pn
p-type layers of material or two p-type and junctions between emitter and collector, is
one n-type layer of material. called the Base.
• The former is called an npn transistor, while
the latter is called a pnp transistor TRANSISTOR OPERATION
• So, there are two types of BJT: 1. WORKING OF NPN TRANSISTOR
i) pnp transistor
 • Forward bias is applied to emitter base TRANSISTOR SYMBOLS
junction, and reverse bias is applied to the
collector-base junction.
• The forward bias in the emitter-base
junction causes electrons to move toward
the base. This constitutes emitter current, IE

TRANSISTOR OPERATING MODES

• ACTIVE MODE BASE
- Emitter junction is forward and Base-
Collector junction is reverse biased.
• SATURATION MODE BASE
• As this electrons flow toward p-type base, they - Emitter junction is forward and Base-
try to recombine with holes. As base is lightly Collector junction is forward-biased.
doped only few electrons recombine with • CUT-OFF MODE
holes within the base. - Both junctions are reverse-biased.
• These recombined electrons constitute
small base current.
• The remainder electrons crosses base and
constitute collector current.

2. WORKING OF PNP TRANSISTOR

• Forward bias is applied to emitter base
junction, and reverse bias is applied to the
collector-base junction.
• The forward bias in the emitter-base junction
causes holes to move toward the base. This
constitutes emitter current, IE

• As this holes flow toward n-type base, they try

to recombine with electrons. As base is lightly
doped only few holes recombine with
electrons within the base.
• These recombined holes constitute small
base current.
• The remainder holes crosses base and
constitute collector current.