Max17047 Max17050
Max17047 Max17050
PK+ VTT
VBATT (MAX17047 ONLY)
THRM ALRT
Electrical Characteristics
(VBATT = 2.5V to 4.5V, TA = -20°C to +70°C, unless otherwise noted. Typical values are at TA = +25°C.) (Note 2)
SDA
tF
tF tSP tR tBUF
tSU:DAT
tLOW tR tHD:STA
SCL
MAX17047 toc02
MAX17047 toc01
MAX17047 toc03
TA = +70°C TA = +70°C
0.7 8
30 TA = +25°C
6 TA = -20°C
0.6
ACTIVE CURRENT (uA)
25 4 TA = +70°C
0.5 2
TA = +25°C 20
0.4 0
15 TA = -20°C
0.3 -2
10 -4 TA = +25°C
0.2
TA = -20°C -6
5
0.1 -8
0 0 -10
0 1 2 3 4 5 0 1 2 3 4 5 2.2 2.7 3.2 3.7 4.2
VBATT (V) VBATT (V) VBATT (V)
MAX17047 toc05
MAX17047 toc04
0.8
AUXILIARY INPUT ADC ERROR (%)
10 0.6
CURRENT ADC ERROR (mA)
TA = -20°C 0.4
5
0.2 TA = +70°C
0 0
-0.2 TA = +25°C
-50 TA = +25°C TA = +70°C -0.4 TA = -20°C
-0.6
-10
-0.8
-15 -1.0
-2 -1 0 1 2 0 10 20 30 40 50 60 70 80 90 100
CURRENT FORCED (A) AIN RATIO TO VTT (%)
6 4.3
SOC (%), TEMPERATURE (°C)
MAX17047 toc08
MAX17047 toc09
90 8 90 8
C/4 DISCHARGE
80 REFERENCE 6 80 6
C/7 DISCHARGE
STATE OF CHARGE (%)
ERROR (%)
ERROR ERROR
50 0 50 0
40 -2 40 -2
REFERENCE
30 -4 30 SOC -4
20 SOCREP -6 20 -6
10 -8 10 SOCREP -8
0 -10 0 -10
0 2 4 6 8 10 0 2 4 6 8 10
TIME (Hr) TIME (Hr)
70 4 70 3.9
REFERENCE VCELL
60 2 60 3.8
ERROR (%)
VCELL (V)
SOC ERROR
50 0 50 3.7
TEMPERATURE
40 -2 40 3.6
30 -4 30 3.5
C/4 DISCHARGE SOCREP (%)
20 -6 20 3.4
C/7 DISCHARGE REFERENCE SOC (%)
10 C/9 DISCHARGE -8 10 3.3
0 -10 0 3.2
0 5 10 15 0 5 10
TIME (Hr) TIME (Hr)
Pin/Bump Configurations
MAX17050
TOP VIEW
1 2 3
+
VTT 1 + 10 VBATT A AIN SCL CSN
AIN 2 9 THRM
B VBATT
SCL 3 8 ALRT ALRT REG
MAX17047
SDA 4 7 REG
C SDA THRM CSP
EP
CSN 5 6 CSP
WLP
TDFN
Pin/Bump Descriptions
PIN BUMP
NAME FUNCTION
TDFN WLP
Supply Input for Thermistor Bias Switch (MAX17047 Only.) VTT is connected internally to VBATT
1 — VTT on the MAX17050. Connect to supply for ratiometric AIN pin-voltage measurements. In most
applications, connect VTT to VBATT.
Auxiliary Voltage Input. Auxiliary voltage input from external thermal-measurement network. AIN also
2 A1 AIN
provides battery insertion/removal detection. Connect to VBATT, if not used.
3 A2 SCL Serial Clock Input. 2-wire clock line. Input only.
4 C1 SDA Serial Data Input/Out. 2-wire data line. Open-drain output driver.
5 A3 CSN Sense Resistor Connection. System ground connection and sense resistor input.
6 C3 CSP Chip Ground and Sense Resistor Input
7 B3 REG Voltage Regulator Bypass. Connect a 0.1µF capacitor from REG to CSP.
Alert Indication. An open-drain n-channel output used to indicate specified condition thresholds have
8 B2 ALRT been met. A 200kΩ pullup resistor to power rail is required for use as an output. Alternatively, ALRT
can operate as a shutdown input with the output function disabled.
Thermistor Bias Connection. Supply for thermistor resistor-divider. Connect to the high side of the
9 C2 THRM
thermistor/resistor-divider. THRM connects internally to VTT during temperature measurement.
Power-Supply and Battery Voltage-Sense Input. Kelvin connect to positive terminal of battery pack.
10 B1 VBATT
Bypass with a 0.1µF capacitor to CSP.
— — EP Exposed Pad (TDFN Only). Connect to CSP.
Block Diagram
VBATT
ALRT
PK+ IN
32kHz OSCILLATOR
0.1µF ModelGauge m3
2V LDO
ALGORITHM
PK- REG OCV CALCULATION
OUT
VTT CSP
0.1µF (MAX17047 ONLY)
PK+
PK- MAX17047
P MAX17050
REF
THRM
VTHRM - VDETR/VDETF
BATTERY
REMOVAL VBATT
DETECT SDA
REF ADC
AIN I 2C
MUX 12-BIT ADC
INTERFACE SCL
10nF
CSP CSN
10mΩ
RSNS
PK-
PK- SYSTEM GROUND
VOLTAGE CURRENT
OCV CALCULATION OCV TABLE LOOKUP COULOMB COUNTER
OCV TEMPERATURE- OCV OUTPUT % REMAINING OUTPUT mAh OUTPUT
RELAXED TIME
COMPENSATION LEARN
CELL
DETECTION
CAPACITY LEARN
mAh PER %
MIXING ALGORITHM
EMPTY mAh OUTPUT
DETECTION
RemCapMIX
SOCMIX
CURRENT
APPLICATION
EMPTY
COMPENSATION
TEMPERATURE
APPLICATION CELL CHEMISTRY
OUTPUTS: OUTPUTS:
SOCREP OCV
RemCapREP CYCLES
END-OF-CHARGE SOCAV RCELL
DETECTION RemCapAV FullCAPNom
TTE AGE
FullCAP
time in the actual application, the error in the system is combined result eliminates the weaknesses of both the
boundless. The performance of classic coulomb coun- coulomb counter and the VFG, while providing the
ters is dominated by the accuracy of such corrections. strengths of both. A mixing algorithm combines the VFG
Classical voltage-measurement-based SOC estimation capacity with the coulomb counter and weighs each
has poor accuracy due to inadequate cell modeling, but result so that both are used optimally to determine the
does not accumulate offset error over time. battery state. In this way, the VFG capacity result is used
to continuously make small adjustments to the battery
The device includes an advanced VFG, which estimates state, canceling the coulomb-counter drift.
open-circuit voltage (OCV), even during current flow, and
simulates the nonlinear internal dynamics of a lithium-ion The ModelGauge m3 algorithm uses this battery state
(Li+) battery to determine the SOC with improved accu- information and accounts for temperature, battery current,
racy. The model considers the time effects of a battery age, and application parameters to determine the remain-
caused by the chemical reactions and impedance in the ing capacity available to the system.
battery to determine SOC based on table lookup. This SOC The ModelGauge m3 algorithm continually adapts to the
estimation does not accumulate offset error over time. cell and application through independent learning rou-
The ModelGauge m3 algorithm combines a high-accu- tines. As the cell ages, its change in capacity is monitored
racy coulomb counter with a VFG. The complementary and updated and the VFG dynamics adapt based on cell-
voltage behavior in the application.
OCV Estimation and Coulomb-Count Mixing The resulting output from the mixing algorithm does
The core of the ModelGauge m3 algorithm is a mixing not suffer drift from current measurement offset error
algorithm that combines the OCV state estimation with and is more stable than a stand-alone OCV estimation
the coulomb counter. After power-on reset of the IC, algorithm; see Figure 4. Initial accuracy depends on the
coulomb-count accuracy is unknown. The OCV state relaxation state of the cell. The highest initial accuracy is
estimation is weighted heavily compared to the coulomb- achieved with a fully relaxed cell.
count output. As the cell progresses through cycles in the Fuel-Gauge Empty Compensation
application, coulomb-counter accuracy improves and the
As the temperature and discharge rate of an application
mixing algorithm alters the weighting so that the coulomb-
changes, the amount of charge available to the appli-
counter result is dominant. From this point forward, the IC
cation also changes. The ModelGauge m3 algorithm
switches to servo mixing. Servo mixing provides a fixed
distinguishes between remaining capacity of the cell
magnitude continuous error correction to the coulomb
(RemCapMIX) and remaining capacity of the application
count, up or down, based on the direction of error from
(RemCapAV) and reports both results to the user.
the OCV estimation. This allows differences between
the coulomb count and OCV estimation to be corrected Fuel-Gauge Learning and Age Support
quickly. See Figure 3. The device periodically makes internal adjustments to cell
characterization and application information to remove
100% initial error and maintain accuracy as the cell ages. These
adjustments always occur as small undercorrections to
prevent instability of the system and prevent any notice-
OCV AND COULOMB-COUNT
COULOMB-COUNT INFLUENCE SERVO MIXING tain learned accuracy through power loss, the host must
periodically save learned information and then restore
after power is returned. See the Power-Up and Power-On
Reset section for details:
OCV • Full Capacity Available to Application (FullCAP).
INFLUENCE This is the total capacity available to the application
0%
0 0.50 1.00 1.50 2.00 at full. FullCAP is updated near the end of charging
CELL CYCLES when termination is detected. See the End-of-Charge
Detection section.
Figure 3. ModelGauge m3 OCV and Coulomb-Count Mixing
(SHADED AREA)
ModelGauge m3
OCV + COULOMB-COUNT MIXING
MAXIMUM ERROR RANGE
TIME
• Cell Capacity (FullCapNom). This is the total cell Typical Operating Circuit
capacity at full, according to the VFG. This includes The device is designed to mount outside the cell pack
some capacity that is not available to the application that it monitors. Voltage of the battery pack is measured
at high loads and/or low temperature. The device directly at the pack terminals by the VBATT and CSP
periodically compares percent change based on OCV connections. Current is measured by an external sense
measurement vs. coulomb-count change as the cell resistor placed between the CSP and CSN pins. An exter-
charges and discharges. This information allows the nal resistor-divider network allows the device to measure
device to maintain an accurate estimation of the cell’s temperature of the cell pack by monitoring the AIN pin.
capacity in mAh as the cell ages. The THRM pin provides a strong pullup for the resistor-
• Voltage Fuel-Gauge Adaptation. The device divider that is internally disabled when temperature is not
observes the battery’s relaxation response and adjusts being measured.
the dynamics of the VFG. This adaptation adjusts Communication to the host occurs over a standard I2C
the RCOMP0 register during qualified cell relaxation interface. SCL is an input from the host, and SDA is an
events. open-drain I/O pin that requires an external pullup. The
• Empty Learning. The device updates internal data ALRT pin is an output that can be used as an external
whenever cell empty is detected (VCELL < V_empty) interrupt to the host processor if certain application condi-
to account for cell age or other cell deviations from tions are detected. ALRT can also function as an input,
the characterization information. This maintains SOC allowing the host to shut down the device. This pin is
accuracy as the battery ages. also open drain and requires an external pullup resistor.
Figure 5 is the typical operating circuit.
Determining Fuel-Gauge Accuracy
To determine the true accuracy of a fuel gauge, as expe- Multicell Circuit
rienced by end users, the battery should be exercised The MAX17047 can be used in multicell pack applica-
in a dynamic manner. The end-user accuracy cannot be tions. A resistor-divider network divides the pack voltage
understood with only simple cycles. down so that the IC monitors the equivalent voltage of a
To challenge a correction-based fuel gauge, such as a single cell. The MAX9910 buffers the divider output so
coulomb counter, test the battery with partial loading ses- that loading by the MAX17047 does not affect accuracy.
sions. For example, a typical user may operate the device VTT must be connected to a regulated supply in the sys-
for 10min and then stop use for an hour or more. A robust tem to prevent overloading the MAX9910. Contact the
test method includes these kinds of sessions many times factory for a MAX17050 multicell application circuit. See
at various loads, temperatures, and duration. Refer to Figure 6.
Application Note 4799: Cell Characterization Procedure Thermistor Sharing Circuit
for a ModelGauge m3 Fuel Gauge.
The MAX17047 can share the cell thermistor circuit with
Initial Accuracy the system charger. In this circuit, there is a single therm-
The device uses the first voltage reading after power-up istor inside the cell pack and a single bias resistor external
or after cell insertion to determine the starting output of to the cell pack. The device shares the same external
the fuel gauge. It is assumed that the cell is fully relaxed bias as the charger circuit and measurement point on the
prior to this reading; however, this is not always the case. thermistor. In this configuration, each device can measure
If the cell was recently charged or discharged, the volt- temperature individually or simultaneously without inter-
age measured by the device may not represent the true ference. Alternatively, if the bias voltage in the charger
state of charge of the cell, resulting in initial error in the circuit is not available to the device, a separate bias volt-
fuel gauge outputs. In most cases, this error is minor and age on the VTT pin can be used. For proper operation, the
is quickly removed by the fuel gauge algorithm during separate bias voltage must be larger than the minimum
normal operation. operating voltage of the device, but no larger than one
diode drop above the charger circuit bias voltage. The
MAX17050 cannot be operated in his configuration. See
Figure 7.
PK+ VTT
VBATT (MAX17047 ONLY) OPTIONAL OPTIONAL
200kΩ 5kΩ
THRM ALRT
THERMISTOR
OPTIONAL SDA HOST
MEASUREMENT OPTIONAL MAX17047
10kΩ µP
T AIN MAX17050 SCL
REG
OPTIONAL
CSP EP CSN
PROTECTION IC 10kΩ OPTIONAL
0.1µF 0.1µF
NTC 10nF
THERMISTOR 10mΩ
RSNS
PK-
CELL N
4.5V-5.5V
N-1 REGULATOR
MΩ VTT OPTIONAL OPTIONAL
CELL 1 200kΩ 5kΩ
MAX9910 100Ω ALRT
VBATT
PROTECTOR
Recommended Layout 3) CSN and CSP traces should make Kelvin connec-
Proper circuit layout (see Figure 8) is essential for tions to RSNS. The device measures current differ-
measurement accuracy when using the MAX17047/ entially through the CSN and CSP pins. Any shared
MAX17050 ModelGauge m3 ICs. The recommended lay- high-current paths on these traces will affect current-
out guidelines are as follows: measurement gain accuracy. PCB resistance that
cannot be removed can be compensated for during
1) Mount RSNS as close as possible to PACK-. The characterization of the application cell.
device shares both voltage and current measure-
ments on the CSP pin. Therefore, it is important to 4) VBATT capacitor trace loop area should be minimized.
limit the amount of trace resistance between the The device shares the VBATT pin for both voltage mea-
current-sensing resistor and PACK-. surement and IC power. Limiting noise at the VBATT
pin is important to current-measurement accuracy.
2) VBATT trace should make a Kelvin connection to
PACK+. The device shares the VBATT pin for both 5) REG capacitor trace loop area should be minimized.
voltage measurement and IC power. Limiting the The helps filter any noise from the internal regulated
voltage loss through this trace is important to voltage- supply.
measurement accuracy. PCB resistance that cannot 6) There are no limitations on any other IC connection.
be removed can be compensated for during charac- Connections to THRM, ALRT, SDA, SCL, VTT, and
terization of the application cell. AIN, as well as any external components mounted to
these pins, have no special layout requirements.
VBIAS
2.8V < VBIAS < VINTERNAL + 0.6V
THERMISTOR THERMISTOR
INSIDE MAX17047 + CHARGER INSIDE MAX17047 + CHARGER
CELL PACK WITH EXTERNAL BIAS CELL PACK WITH INTERNAL BIAS
PK- PK-
Figure 7. Operating Circuits that Share Pack Thermistor with System Charger
POSITIVE POSITIVE
POWER BUS POWER BUS
PACK+ PACK+
+
VBATT SDA VBATT AIN
VTT
AIN THRM
THRM ALRT SCL
SCL ALRT CVBATT CVBATT
MAX17047
SDA CREG CSP REG CSN
REG REG MAX17050
CSN EP
CSP
CREG
NEGATIVE NEGATIVE
POWER BUS POWER BUS
PACK- PACK-
RSNS RSNS
VCELL SOCMIX
CURRENT RemCapMIX
AverageCurrent SOCAV
AverageTemperature RemCapAV
ModelGauge
TTE ALGORITHM
DesignCap OUTPUTS
AGE
APPLICATION ICHGTerm
SPECIFIC CYCLES
FullSOCThr
OCV
V_empty
FullCAP
ModelGauge ALGORITHM
CHARACTERIZATION FullCapNom
TABLE
FSTAT
QResidual Table
FullCAP
FCTC
CELL
CHARACTERIZATION LearnCFG CYCLES
RCOMP0
INFORMATION
FilterCFG QResidual Table
TempCo
RelaxCFG ALGORITHM RCOMP0 SAVE AND
TempNom
CONFIGURATION RESTORE
TempLim MiscCFG TempCo INFORMATION
V_empty dQacc
AtRate
FullCapNom dPacc
Iavg_empty
RemCapMIX Register (0Fh) the upper byte of the register with a resolution of 1.0%.
The RemCapMIX register holds the calculated remain- Figure 12 shows the SOCREP register format.
ing capacity of the cell before any empty compensation RemCapREP Register (05h)
adjustments are performed. The value is stored in terms of
RemCapREP is a filtered version of the RemCapAV regis-
µVh and must be divided by the application sense-resistor
ter that prevents large jumps in the reported value caused
value to determine remaining capacity in mAh. Figure 11
by changes in the application such as abrupt changes
shows the RemCapMIX register format.
in load current. The value is stored in terms of µVh and
SOCREP Register (06h) must be divided by the application sense-resistor value to
SOCREP is a filtered version of the SOCAV register that determine remaining capacity in mAh. During application
prevents large jumps in the reported value caused by idle periods where the AverageCurrent Register value is
changes in the application such as abrupt changes in load less than ±6 LSbs, RemCapREP does not change. The
current. The register value is stored as a percentage with measured current during this period is still accumulated
a resolution of 0.0039% per LSb. If an 8-bit SOC value is into RemCapMIX and is slowly reflected in RemCapREP
desired, the host can discard the lower byte and use only once cell loading or charging occurs. Figure 13 shows the
RemCapREP register format.
Alternatively, the TTE register can be used to estimate Cycles Register (17h)
time to empty for any given current load. Whenever the The Cycles register accumulates total percent change in
AtRate register is programmed to a negative number, rep- the cell during both charging and discharging. The result
resenting a discharge current, the TTE register displays is stored as a total count of full charge/discharge cycles.
the estimated time to empty for the application based For example, a full charge/discharge cycle results in
on the AtRate register value. Figure 17 shows the TTE the Cycles register incrementing by 100%. The Cycles
register format. register has a full range of 0 to 65535% with a 1% LSb.
Age Register (07h) This register is reset to 0% at power-up. To maintain the
lifetime cycle count of the cell, this register must be peri-
The Age register contains a calculated percentage value
odically saved by the host and rewritten to the device at
of the application’s present cell capacity compared to its
power-up. See the Save and Restore Registers section
expected capacity. The result can be used by the host to
for details. See Figure 19 for the Cycles register format.
gauge the cell’s health as compared to a new cell of the
same type. The result is displayed as a percentage value VFOCV Register (FBh)
from 0 to 256% with a 0.0039% LSb. Figure 18 shows the The VFOCV register contains the raw open-circuit volt-
Age register format. The equation for the register output is: age output of the voltage fuel gauge. This value is used
Age Register = 100% x (FullCAP Register/ in other internal calculations and can be read for debug
DesignCap Register) purposes. The result is a 12-bit value ranging from 2.5V to
5.119V where 1 LSb is 1.25mV. The bottom 4 bits of this
register are don’t care bits. See Figure 20 for the VFOCV
register format.
211 210 29 28 27 26 25 24 23 22 21 20 X X X X
End-of-Charge Detection and AverageCurrent registers, the device can reject false
The device detects the end of a charge cycle when end-of-charge events such as application load spikes or
the application current falls into the band set by the early charge-source removal. See the End-of-Charge
ICHGTerm register value. By monitoring both the Current Detection graph in the Typical Operating Characteristics
and Figure 26.
AVERAGE CURRENT
CURRENT
CHARGING
1.25 x ICHGTerm
0.125 x ICHGTerm
0mA
AVERAGE CURRENT
CHARGING CURRENT
1.25 x ICHGTerm
0.125 x ICHGTerm
0mA
When a proper end-of-charge event is detected, the device detects end of charge if all the following conditions
device learns a new FullCAP register value based on are met:
the RemCapREP output. If the old FullCAP value was • SOCVF > FullSOCThr
too high, it is adjusted downward after the last valid end-
of-charge detection. If the old FullCAP was too low, it is • AND ICHGTerm x 0.125 < Current < ICHGTerm x 1.25
adjusted upward to match RemCapREP. This prevents • AND ICHGTerm x 0.125 < AverageCurrent <
the calculated state of charge from ever reporting a value ICHGTerm x 1.25
greater than 100%. See Figure 27. Values are stored in µV. Multiply the termination current
ICHGTerm Register (1Eh) by the sense resistor to determine the desired register
value. This register has the same range and resolution
The ICHGTerm register allows the device to detect when
as the Current register. Figure 28 shows the ICHGTerm
a charge cycle of the cell has completed. The host should
register format. ICHGTerm defaults to 150mA (03C0h) at
set the ICHGTerm register value equal to the exact
power-up.
charge termination current used in the application. The
AVERAGE CURRENT
CURRENT
CHARGING
1.25 x ICHGTerm
0.125 x ICHGTerm
0mA
AVERAGE CURRENT
CHARGING CURRENT
1.25 x ICHGTerm
0.125 x ICHGTerm
0mA
VE8 VE8 VE6 VE5 VE4 VE3 VE2 VE1 VE0 VR6 VR5 VR4 VR3 VR2 VR1 VR0
Load6 Load5 Load4 Load3 Load2 Load1 Load0 dV4 dV3 dV2 dV1 dV0 dt3 dt2 dt1 dt0
DISCHARGING
dV5 dV6
dV4
CELL dV3
VOLTAGE
dV2
48 TO 96
MINUTES
dt1 dt2 dt3 dt4 dt5 dt6
MSB—ADDRESS LSB—ADDRESS
Filt
0 0 1 0 0 1 1 0 0 LS2 LS1 LS0 0 1 EL
Empty
MSb LSb MSb LSb
LS2:LS0—Learn Stage. See Figure 3 The Learn Stage 0 1 SOC Alerts are generated based on the SOCAV
value controls the influence of the VFG on the mixing register.
algorithm. At power-up, Learn Stage defaults to 0h, mak- 1 0 SOC Alerts are generated based on the SOCMIX
ing the voltage fuel gauge dominate. Learn Stage then register.
advances to 7h over the course of two full cell cycles to
make the coulomb counter dominate. Host software can 1 1 SOC Alerts are generated based on the SOCVF
write the Learn Stage value to 7h to advance to the final register.
stage at any time. Writing any value between 1h and 6h MR4:MR0—Mixing Rate. This value sets the strength of
is ignored. Learn Stage reflects the D5, D6, and D7 bits of the servo mixing rate after the final mixing state has been
the Cycles register. Update the Cycles register to advance reached (> 2.08 complete cycles). The units are MR0 =
to an intermediate state. For example, set Cycles = 160% 6.25µV, giving a range up to 19.375mA with a standard
to advance to Learn Stage 5. 0.010Ω sense resistor. Setting this value to 00000b
EL—Empty Learning. Set this bit to 1 to turn on the Empty disables servo mixing and the IC continues with time-
Learning feature. When enabled, the QResidual table is constant mixing indefinitely. The default setting is 18.75µV
automatically adjusted at each empty event to compen- or 1.875mA with a standard sense resistor.
sate for the age of battery. enBi1—Enable reset on battery-insertion detection. Set
this bit to 1 to force a reset of the fuel gauge whenever a
MiscCFG Register (2Bh) battery insertion is detected based on AIN pin monitoring.
The MiscCFG control register enables various other func- This bit is written to 1 at power-up.
tions of the device. The MiscCFG register default values
should not be changed unless specifically required by the FSTAT Register (3Dh)
application. Figure 34 is the MiscCFG register format: The FSTAT register is a read-only register that monitors
0—Bit must be written 0. Do not write 1. the status of the ModelGauge algorithm. Do not write
to this register location. Figure 35 is the FSTAT register
1—Bit must be written 1. Do not write 0. format:
X—Don’t Care. Bit may read 0 or 1. RelDt—Relaxed cell detection. This bit is set to a 1 when-
SACFG1:SACFG0—SOC Alert Config. SOC Alerts can ever the ModelGauge m3 algorithm detects that the cell is
be generated by monitoring any of the SOC registers as in a fully relaxed state. This bit is cleared to 0 whenever a
follows. SACFG defaults to 00 at power-up: current greater than the Load threshold is detected. See
0 0 SOC Alerts are generated based on the SOCREP Figure 32.
register.
RelDt2—Long Relaxation. This bit is set to a 1 whenever registers calculate their values for the AtRate register
the ModelGauge m3 algorithm detects that the cell has theoretical current instead. The AtRate register holds a
been relaxed for a period of 48 to 96 minutes or longer. two’s-complement 16-bit value. Do not write 8000h to this
This bit is cleared to 0 whenever the cell is no longer in a register. Figure 36 shows the AtRate register format.
relaxed state. See Figure 32.
DNR—Data Not Ready. This bit is set to 1 at cell inser- Power-Up and Power-On Reset
tion and remains set until the output registers have been Any power-on reset (POR) of the device resets all mem-
updated. Afterwards, the IC clears this bit indicating the ory locations to their default POR value. This removes
fuel gauge calculations are now up to date. This takes any custom cell characterization and application data,
between 445ms and 1.845s depending on whether the IC affects ALRT interrupt and shutdown mode settings,
was in a powered state prior to the cell-insertion event. and resets all learned adjustments made by the fuel
gauge. To maintain accuracy of the fuel gauge and reset
EDet—Empty Detection. This bit is set to 1 when the IC
operation settings of the device, the host must reload
detects that the cell empty point has been reached. This
all application memory data and restore all learned fuel-
bit is reset to 0 when the cell voltage rises above the
gauge information. Note that the device may take up to
recovery threshold. See the V_empty register for details.
445ms to completely reset operation after a POR event
X—Don’t Care. This bit is undefined and can be logic 0 occurs. See Figure 37. Saved data should not be restored
or 1. until after this period is over. The following procedure is
recommended:
AtRate Register (04h)
The AtRate register allows host software to estimate 1) Read Status register. If POR = 0, exit.
remaining capacity, SOC, and time to empty for a theo- 2) Wait 600ms for POR operation to fully complete.
retical load current. Whenever the AtRate register is 3) Restore all application register values.
programmed to 0 or a positive value, the device uses A/D
measurements for determining the SOCAV, RemCapAV, 4) Restore fuel gauge learned-value information (see the
and TTE register values. Whenever the AtRate register Save and Restore Registers section).
is programmed to a negative value indicating a hypotheti- 5) Clear POR bit.
cal discharge current, the SOCAV, RemCapAV, and TTE
VBATT
AIN
270ms
A/D
READINGS
175ms
OUTPUT
REGISTERS
CELL
VBATT > VDDMIN
INSERTION
A/D SOC VALUES
MEASUREMENTS UPDATED
COMPLETE
Detection occurs by monitoring the AIN pin voltage com- inserted cell. This process can take up to 1.845s (FTHRM
pared to the THRM pin. Whenever a cell is present, the = 0) or 620ms (FTHRM = 1) from time of insertion. Note
external resistor-divider network sets the voltage of AIN. that the device uses the cell voltage as a starting point
When the cell is removed, the remaining external resistor for the fuel gauge. If the cell voltage is not fully relaxed at
pulls AIN to the THRM pin voltage level. Whenever VAIN time of insertion, the fuel gauge begins with some initial
< VTHRM - VDETF, the device determines that a cell is error. See the Fuel-Gauge Learning and Age Support
present in the application. If VAIN > VTHRM - VDETR, the section for details. The host can disable this feature by
device determines that no cell is present at that time. clearing the enBi1 bit in the MiscCFG register.
Cell Insertion (IC Already Powered) The device can also be configured to alert the host when
cell insertion occurs. When Bei = 1 in the CONFIG regis-
The device is ready to detect a cell insertion if either the
ter, the device generates an interrupt on the ALRT pin at
ETHRM or FTHRM bits of the CONFIG register are set to
the start of the first temperature conversion after insertion.
enable the THRM pin output. See Figure 38. When a cell
This could take up to 1.4s to occur. This feature is useful
insertion is detected, the fuel gauge is reset and all fuel-
if the application uses more than one cell type and the IC
gauge outputs are updated to reflect the SOC of the newly
must be reconfigured at each insertion.
VBATT
UP TO 1.4s
AIN
270ms
A/D
READINGS
175ms
OUTPUT
REGISTERS
VBATT
UP TO
175ms
AIN
270ms
A/D
READINGS
175ms
OUTPUT
REGISTERS
CELL REMOVAL
VBATT (Ber = 1, FTHRM = 1)
AIN
< 100µs
ALRT
OUTPUT
These shutdown entry modes are all programmable if the pin is configured to be logic-low when inactive, the
according to application. Shutdown events are gated external pullup increases current drain.
by the SHDNTIMER register, which allows a long delay The ALRTp bit in the CONFIG register sets the polarity of
between the shutdown event and the actual shutdown. the ALRT pin output. Alerts can be triggered by any of the
By behaving this way, the device takes the best reading following conditions:
of the relaxation voltage.
• Battery removal—(VAIN > VTHRM - VDETR) and bat-
Exiting shutdown: tery removal detection enabled (Ber = 1).
• I2C Wakeup—Any edge on SCL/SDA. • Battery insertion—(VAIN < VTHRM - VDETF) and bat-
• ALRT Wakeup—Any edge on ALRT line and (ALSH = tery insertion detection enabled (Bei = 1).
1 or I2CSH = ALSH = 0). • Over-/undervoltage—VALRT threshold violation
• Reset—IC is power cycled. (upper or lower) and alerts enabled (Aen = 1).
See the Status and Configuration section for detailed • Over-/undertemperature—TALRT threshold violation
descriptions of the SHDNTIMER and CONFIG registers. (upper or lower) and alerts enabled (Aen = 1).
The state of the device when returning to active mode • Over/under SOC—SALRT threshold violation (upper
differs depending on the triggering event. See Figure 40. or lower) and alerts enabled (Aen = 1).
Host software can monitor the POR and Bi status bits to To prevent false interrupts, the threshold registers should
determine what type of event has occurred. be initialized before setting the Aen bit. Alerts generated
by battery insertion or removal can only be reset by clear-
ALRT Function ing the corresponding bit in the Status register. Alerts
The Alert Threshold registers allow interrupts to be gener- generated by a threshold-level violation can be configured
ated by detecting a high or low voltage, a high or low tem- to be cleared only by software, or cleared automatically
perature, or a high or low SOC. Interrupts are generated when the threshold level is no longer violated. See the
on the ALRT pin open-drain output driver. An external pul- CONFIG (1Dh) register description for details of the alert
lup is required to generate a logic-high signal. Note that function configuration.
STATUS
EVENT ACTION
INDICATORS
VALRT Threshold Register (01h) operating range of the Temperature register. At power-up,
The VALRT Threshold register (Figure 41) sets upper the thresholds default to their maximum settings—7F80h
and lower limits that generate an ALRT pin interrupt (disabled). Figure 42 shows the TALRT Threshold register
if exceeded by the VCELL register value. The upper 8 format.
bits set the maximum value and the lower 8 bits set the SALRT Threshold Register (03h)
minimum value. Interrupt threshold limits are selectable
The SALRT Threshold register (Figure 43) sets upper
with 20mV resolution over the full operating range of the
and lower limits that generate an ALRT pin interrupt if
VCELL register. At power-up, the thresholds default to
exceeded by the selected SOCREP, SOCAV, SOCMIX,
their maximum settings—FF00h (disabled).
or SOCVF register values. See the SACFG bits in the
TALRT Threshold Register (02h) MiscCFG register description for details. The upper 8 bits
The TALRT Threshold register sets upper and lower limits set the maximum value and the lower 8 bits set the mini-
that generate an ALRT pin interrupt if exceeded by the mum value. Interrupt threshold limits are selectable with
Temperature register value. The upper 8 bits set the maxi- 1% resolution over the full operating range of the selected
mum value and the lower 8 bits set the minimum value. SOC register. At power-up, the thresholds default to their
Interrupt threshold limits are stored in two’s-complement maximum settings—FF00h (disabled).
format and are selectable with 1°C resolution over the full
MAX7 MAX6 MAX5 MAX4 MAX3 MAX2 MAX1 MAX0 MIN7 MIN6 MIN5 MIN4 MIN3 MIN2 MIN1 MIN0
S MAX6 MAX5 MAX4 MAX3 MAX2 MAX1 MAX0 S MIN6 MIN5 MIN4 MIN3 MIN2 MIN1 MIN0
MAX7 MAX6 MAX5 MAX4 MAX3 MAX2 MAX1 MAX0 MIN7 MIN6 MIN5 MIN4 MIN3 MIN2 MIN1 MIN0
Status and Configuration enable the thermistor bias switch. With a standard 10kΩ
The following registers control operation of the ALRT thermistor, this adds an additional ~200µA to the current
interrupt feature, control transition between active and drain of the circuit. This bit is set to 0 at power-up.
shutdown modes of operation, and provide status updates ETHRM—Enable Thermistor. Set to logic 1 to enable the
to the host processor. automatic THRM output bias and AIN measurement every
1.4s. This bit is set to 1 at power-up.
CONFIG Register (1Dh)
ALSH—ALRT Shutdown. Set to logic 1 and clear the Aen,
The CONFIG register holds all shutdown enable, alert
Ber, and Bei bits to configure the ALRT pin as an input to
enable, and temperature enable control bits. Writing a
control shutdown mode of the device. The device enters
bit location enables the corresponding function within a
shutdown if the ALRT pin is held active for longer than
175.8ms task period. Figure 44 shows the CONFIG reg-
timeout of the SHDNTIMER register. The device enters
ister format.
active mode immediately on the opposite edge of the
0—Bit must be written 0. Do not write 1. ALRT pin. When set to logic 0, the ALRT pin can function
Ber—Enable alert on battery removal. When Ber = 1, as an interrupt output. This bit is set to 0 at power-up.
a battery-removal condition, as detected by the AIN pin Note that if this bit is set to 1, the Bei, Ber, and Aen bits
voltage, triggers an alert. Set to 0 at power-up. Note that should be set to 0 to prevent an alert condition from caus-
if this bit is set to 1, the ALSH bit should be set to 0 to ing the device to enter shutdown mode.
prevent an alert condition from causing the device to enter I2CSH—I2C Shutdown. Set to logic 1 to force the device
shutdown mode. to enter shutdown mode if both SDA and SCL are held low
Bei—Enable alert on battery insertion. When Bei = 1, a for more than timeout of the SHDNTIMER register. This
battery-insertion condition, as detected by the AIN pin also configures the device to wake up on a rising edge
voltage, triggers an alert. Set to 0 at power-up. Note that of either SDA or SCL. Set to 1 at power-up. Note that if
if this bit is set to 1, the ALSH bit should be set to 0 to I2CSH and AINSH are both set to 0, the device wakes up
prevent an alert condition from causing the device to enter an edge of any of the SDA, SCL, or ALRT pins.
shutdown mode. SHDN—Shutdown. Write this bit to logic 1 to force a
Aen—Enable alert on fuel-gauge outputs. When Aen = shutdown of the device after timeout of the SHDNTIMER
1, violation of any of the alert threshold register values register. SHDN is reset to 0 at power-up and upon exiting
by temperature, voltage, or SOC triggers an alert. This bit shutdown mode.
affects the ALRT pin operation only. The Smx, Smn, Tmx, Tex—Temperature External. When set to 1, the fuel
Tmn, Vmx, and Vmn bits are not disabled. This bit is set gauge requires external temperature measurements to
to 0 at power-up. Note that if this bit is set to 1, the ALSH be written from the host. When set to 0, measurements
bit should be set to 0 to prevent an alert condition from on the AIN pin are converted to a temperature value and
causing the device to enter shutdown mode. stored in the Temperature register instead. Tex is set to 1
FTHRM—Force Thermistor Bias Switch. This allows the at power-up.
host to control the bias of the thermistor switch or enable Ten—Enable Temperature Channel. Set to 1 and set
fast detection of battery removal (see the Fast Detection ETHRM or FTHRM to 1 to enable measurements on the
of Cell Removal section). Set FTHRM = 1 to always AIN pin. Ten is set to 1 at power-up.
0 SS TS VS ALRTp AINSH Ten Tex SHDN I2CSH ALSH ETHRM FTHRM Aen Bei Ber
AINSH—AIN Pin Shutdown. Set to 1 to enable device SS—SOC ALRT Sticky. When SS = 1, SOC alerts can
shutdown when the battery is removed. The IC enters only be cleared through software. When SS = 0, SOC
shutdown if the AIN pin remains high (AIN reading > alerts are cleared automatically when the threshold is no
VTHRM - VDETR) for longer than the timeout of the longer exceeded. SS is set to 0 at power-up.
SHDNTIMER register. This also configures the device to
wake up when AIN is pulled low on cell insertion. AINSH TIMER Register (3Eh)
is set to 0 at power-up. Note that if I2CSH and AINSH are This register holds timing information for the fuel gauge.
both set to 0, the device wakes up an edge of any of the It is available to the user for debug purposes. Figure 45
SDA, SCL, or ALRT pins. shows the TIMER register format.
ALRTp—ALRT Pin Polarity. Regardless if ALRT is being SHDNTIMER Register (3Fh)
used as an input or output, if ALRTp = 0, the ALRT pin The SHDNTIMER register sets the timeout period from
is active low; if ALRTp = 1, the ALRT pin is active high. when a shutdown event is detected until the device dis-
ALRTp must be set to 0 to enable fast detection of cell ables the LDO and enters low-power mode. Figure 46
removal. ALRTp is set to 0 at power-up. shows the SHDNTIMER register format.
VS—Voltage ALRT Sticky. When VS = 1, voltage alerts CTR12:CTR0—Shutdown Counter. This register counts
can only be cleared through software. When VS = 0, volt- the total amount of elapsed time since the shutdown trig-
age alerts are cleared automatically when the threshold is ger event. This counter value stops and resets to 0 when
no longer exceeded. VS is set to 0 at power-up. the shutdown timeout completes. The counter LSb is 1.4s.
TS—Temperature ALRT Sticky. When TS = 1, tempera- THR2:THR0—Sets the shutdown timeout period from a
ture alerts can only be cleared through software. When minimum of 45s to a maximum of 1.6h. The default POR
TS = 0, temperature alerts are cleared automatically value of 7h gives a shutdown delay of 1.6h. The equation
when the threshold is no longer exceeded. TS is set to 1 setting the period is:
at power-up.
Shutdown Timeout Period = 175.8ms x 2(8+THR)
20 UNITS: 175.8ms
Figure 45. Timer Register Format (Output)
THR2 THR1 THR0 CTR12 CTR11 CTR10 CTR9 CTR8 CTR7 CTR6 CTR5 CTR4 CTR3 CTR2 CTR1 CTR0
Status Register (00h) SS in the CONFIG register and SACFG in the MiscCFG
The Status register maintains all flags related to alert register. Smn is set to 0 at power-up.
thresholds and battery insertion or removal. Figure 47 Bi—Battery Insertion. This bit is set to a 1 when the
shows the Status register format. device detects that a battery has been inserted into the
POR—Power-On Reset. This bit is set to a 1 when the system by monitoring the AIN pin. This bit must be cleared
device detects that a software or hardware POR event by system software to detect the next insertion event. Bi
has occurred. If the host detects that the POR bit has is set to 0 at power-up.
been set, the device should be reconfigured. See the Vmx—Maximum VALRT Threshold Exceeded. This bit is
Power-Up and Power-On Reset section. This bit must be set to a 1 whenever a VCELL register reading is above the
cleared by system software to detect the next POR event. maximum VALRT value. This bit may or may not need to be
POR is set to 1 at power-up. cleared by system software to detect the next event. See
Bst—Battery Status. This bit is set to 0 when a battery VS in the CONFIG register. Vmx is set to 0 at power-up.
is present in the system and set to 1 when the battery is Tmx—Maximum TALRT Threshold Exceeded. This bit is
removed. Bst is set to 0 at power-up. set to a 1 whenever a Temperature register reading is
Vmn—Minimum VALRT Threshold Exceeded. This bit is above the maximum TALRT value. This bit may or may
set to a 1 whenever a VCELL register reading is below the not need to be cleared by system software to detect the
minimum VALRT value. This bit may or may not need to be next event. See TS in the CONFIG register. Tmx is set to
cleared by system software to detect the next event. See 0 at power-up.
VS in the CONFIG register. Vmn is set to 0 at power-up. Smx—Maximum SOCALRT Threshold Exceeded. This
Tmn—Minimum TALRT Threshold Exceeded. This bit is bit is set to a 1 whenever SOC rises above the maximum
set to a 1 whenever a Temperature register reading is SOCALRT value. This bit may or may not need to be
below the minimum TALRT value. This bit may or may not cleared by system software to detect the next event. See
need to be cleared by system software to detect the next SS in the CONFIG register and SACFG in the MiscCFG
event. See TS in the CONFIG register. Tmn is set to 0 at register. Smx is set to 0 at power-up.
power-up. Br—Battery Removal. This bit is set to a 1 when the
Smn—Minimum SOCALRT Threshold Exceeded. This device detects that a battery has been removed from the
bit is set to a 1 whenever SOC falls below the minimum system. This bit must be cleared by system software to
SOCALRT value. This bit may or may not need to be detect the next removal event. Br is set to 0 at power-up.
cleared by system software to detect the next event. See X—Don’t Care. This bit is undefined and can be logic 0 or 1.
Version Register (21h) range. The resulting data is placed in the VCELL register
The Version register holds a 16-bit value that indicates the every 175.8ms with an LSb value of 0.625mV. Voltages
version of the device. Figure 48 shows the Version register above the maximum register value are reported as the
format. maximum value. The lower 3 bits of the VCELL register are
don’t care bits. Figure 49 shows the VCELL register format.
Voltage Measurement AverageVCELL Register (19h)
While in active mode, the device periodically measures The AverageVCELL register reports an average of VCELL
the voltage between the VBATT and CSP pins over a 2.5V register readings over a configurable 12s to 24min time
to 4.98V range. The resulting data is placed in the VCELL period. See the FilterCFG register description for details on
register every 175.8ms with an LSb value of 0.625mV. setting the time filter. The resulting average is placed in the
Additionally, the device maintains a record of the minimum AverageVCELL register with an LSb value of 0.625mV. The
and maximum voltage measured by the device, and an lower 3 bits of the AverageVCELL register are don’t care
average voltage over a time period defined by the host. bits. The first VCELL register reading after device power-
Contents of the VCELL and AverageVCELL registers are up sets the starting point of the AverageVCELL filter. Note
indeterminate for the first conversion cycle time period that when a cell relaxation event is detected, the averag-
after device power-up. The last values of the VCELL and ing period for the AverageVCELL register changes to the
AverageVCELL registers are maintained when the device period defined by dt3:dt0 in the RelaxCFG register. The
enters shutdown mode. AverageVCELL register reverts back to its normal averag-
VCELL Register (09h) ing period when a charge or discharge current is detected.
While in active mode, the device periodically measures the Figure 50 shows the AverageVCELL register format.
voltage between the VBATT and CSP pins over a 0 to 4.98V
MaxMinVCELL Register (1Bh) at the factory. However, if the application requires, Current
The MaxMinVCELL register maintains the maximum and Register readings can be adjusted by changing the COFF
minimum VCELL register values since the last fuel-gauge and CGAIN register settings.
reset or until reset by the host software. Each time the Additionally, the device maintains a record of the mini-
VCELL register updates, it is compared against these mum and maximum current measured by the device,
values. If VCELL is larger than the maximum or less than and an average current over a time period defined by
the minimum, the corresponding value is replaced with the host. Contents of the Current and AverageCurrent
the new reading. At power-up, the MaxVCELL value is set registers are 0000h until the first conversion cycle time
to 00h (the minimum) and the MinVCELL value is set to period after IC power-up. The last values of the Current
FFh (the maximum). Therefore, both values are changed and AverageCurrent registers are maintained when the IC
to the VCELL register reading after the first update. Host enters shutdown mode.
software can reset this register by writing it to its power-
up value of 00FFh. The maximum and minimum voltages Current Register (0Ah)
are each stored as 8-bit values with a 20mV resolution. While in active mode, the device periodically measures
Figure 51 shows the MaxMinVCELL register format. the voltage between the CSN and CSP pins over a
±51.2mV range. The resulting data is stored as a two’s-
Current Measurement complement value in the Current register every 175.8ms
While in active mode, the device periodically measures with an LSb value of 1.5625µV/RSENSE. Voltages outside
the voltage between the CSN and CSP pins over a the minimum and maximum register values are reported
±51.2mV range. The resulting data is stored as a signed as the minimum or maximum value. Figure 52 shows the
two’s-complement value in the Current register every Current register format and Table 3 shows the Sample
175.8ms with an LSb value of 1.5625µV/RSENSE. All Current register conversions.
devices are calibrated for current-measurement accuracy
MAX7 MAX6 MAX5 MAX4 MAX3 MAX2 MAX1 MAX0 MIN7 MIN6 MIN5 MIN4 MIN3 MIN2 MIN1 MIN0
AverageCurrent Register (0Bh) update. Host software can reset this register by writing it
The AverageCurrent register reports an average of cur- to its power-up value of 807Fh. The maximum and mini-
rent-register readings over a configurable 0.7s to 6.4h time mum voltages are each stored as two’s-complement 8-bit
period. See the FilterCFG register description for details on values with 0.4mV/RSENSE resolution. Figure 54 shows
setting the time filter. The resulting average is placed in the the MaxMinCurrent register format.
AverageCurrent register with an LSb value of 1.5625µV/ CGAIN Register (2Eh)/COFF Register (2Fh)
RSENSE. The first Current register reading after device
The CGAIN and COFF registers adjust the gain and offset
power-up sets the starting point of the AverageCurrent fil-
of the current measurement result. The current measure-
ter. The last value of the AverageCurrent register is main-
ment A/D is factory trimmed to data-sheet accuracy with-
tained when the device enters shutdown mode. Figure 53
out the need for the user to make further adjustments.
shows the AverageCurrent register format.
The default power-up settings for CGAIN and COFF
MaxMinCurrent Register (1Ch) apply no adjustments to the Current register reading. For
The MaxMinCurrent register maintains the maximum specific application requirements, the CGAIN and COFF
and minimum Current register values since the last fuel registers can be used to adjust readings as follows:
gauge reset or until cleared by host software. Each time Current Register = Current A/D Reading x
the Current register updates, it is compared against these (CGAIN Register/16384) + (2 x COFF Register)
values. If the reading is larger than the maximum or less For easiest software compatibility between systems,
than the minimum, the corresponding value is replaced configure CGAIN to keep current LSb resolution at
with the new reading. At power-up, the MaxCurrent value 0.15625mA. A minimum sense resistance of 0.005Ω is
is set to 80h (the minimum) and the MinCurrent value is required due to the maximum range of CGAIN. This pre-
set to 7Fh (the maximum). Therefore, both values are serves resolution of current readings and capacities.
changed to the Current register reading after the first
S MAX6 MAX5 MAX4 MAX3 MAX2 MAX1 MAX0 S MIN6 MIN5 MIN4 MIN3 MIN2 MIN1 MIN0
Both these registers are signed two’s complement. The FTHRM = 0, the active pullup is disabled when temperature
default values of 4000h for CGAIN and 0000h for COFF measurements are complete. This feature limits the time
preserve factory calibration and unit values (1.5625µV). the external resistor-divider network is active and lowers the
Figure 55 shows the CGAIN register format and Figure 56 total amount of energy used by the system.
shows the COFF register format. When Tex = 0 and Ten = 1 in the CONFIG register, the
device converts the AIN register to a temperature using
Temperature Measurement the temperature gain (TGAIN) and temperature offset
While in active mode and Ten = 1 in the CONFIG register, (TOFF) register values:
the device periodically measures the voltage between the
Temperature Register = (AIN Register x
AIN and CSP pins and compares the result to the voltage
TGAIN Register/16384) + (TOFF Register x 2)
of the THRM pin. The device stores the result, a ratiomet-
ric value from 0 to 100%. The resulting data is placed in The resulting value is stored in the Temperature register
the AIN register every 1.4s with an LSb of 0.0122%. each time the AIN register is updated. Additionally, the
device maintains a record of the minimum and maximum
Conversions are initiated by connecting the THRM and
temperature measured by the device, and an average
VTT pins internally. This enables the active pullup to
temperature over a time period defined by the host.
the external voltage-divider network. After the pullup is
Table 4 lists the recommended TGAIN and TOFF register
enabled, the device waits for a settling period of tPRE prior to
values for common NTC thermistors.
making measurements on the AIN pin. When ETHRM = 1,
S 20 2-1 2-2 2-3 2-4 2-5 2-6 2-7 2-8 2-9 2-10 2-11 2-12 2-13 2-14
Table 4. Recommended TGAIN and TOFF Register Values for Common NTC
Thermistors
THERMISTOR R25C (kΩ) BETA RECOMMENDED TGAIN RECOMMENDED TOFF
Semitec
10 3435 E3E1h 290Eh
103AT-2
Fenwal
10 3974 E71Ch 251Ah
197-103LAG-A01
TDK
10 4550 E989h 22B1h
Type F
When Tex = 1 in the CONFIG register, the device does not value. See the TGAIN and TOFF configuration registers.
update the Temperature register based on results from The resulting data is placed in the Temperature register
the AIN pin A/D. Instead, host software must periodically every 1.4s with a resolution of +0.0039°C. If an 8-bit
write the Temperature register with the known application temperature reading is desired, the host can read only
temperature to keep the fuel gauge accurate. the upper byte of the Temperature register with a resolu-
tion of +1.0°C. Contents of the Temperature register are
AIN Register (27h) indeterminate for the first conversion cycle time period
While in active mode and Ten = 1 in the CONFIG register, after device power-up. The last value of the Temperature
the device periodically measures the voltage between register is maintained when the device enters shutdown
pins AIN and CSP and compares the result to the voltage mode. Figure 58 shows the Temperature register format.
of the THRM pin. The device stores the result, a ratio-
metric value from 0 to 100%. The resulting data is placed AverageTemperature Register (16h)
in the AIN register every 1.4s with an LSb of 0.0122%. The AverageTemperature register reports an average of
Contents of the AIN register are indeterminate for the temperature register readings over a configurable 6min
first conversion cycle time period after device power-up. to 12h time period. See the FilterCFG register (29h)
The last value of the AIN register is maintained when the description for details on setting the time filter. The result-
device enters shutdown mode or if Ten = 0 in the CONFIG ing average is placed in the AverageTemperature register
register. Figure 57 shows the AIN register format. with an LSb value of 0.0039°C. The first Temperature
register reading after device power-up sets the starting
Temperature Register (08h) point of the AverageTemperature filter. The last value
While in active mode and Tex = 0 and Ten = 1 in the of the AverageTemperature register is maintained when
CONFIG register, the device converts the AIN regis- the device enters shutdown mode. Figure 59 shows the
ter value into a signed two’s-complement temperature AverageTemperature register format.
2-1 2-2 2-3 2-4 2-5 2-6 2-7 2-8 2-9 2-10 2-11 2-12 2-13 X X X
MaxMinTemperature Register (1Ah) Both these registers are signed two’s complement. These
The MaxMinTemperature register maintains the maximum registers allow for accurate temperature conversions
and minimum Temperature register values since the last when using a variety of external NTC thermistors (see
fuel-gauge reset or until cleared by host software. Each Table 4). Figure 61 shows the TGAIN register format and
time the Temperature register updates, it is compared Figure 62 shows the TOFF register format.
against these values. If the reading is larger than the
maximum or less than the minimum, the corresponding IC Memory Map
values are replaced with the new reading. At power-up, The device has a 256- word linear memory space containing
the MaxTemperature value is set to 80h (minimum) and all user-accessible registers. All registers are 16 bits wide
the MinTemperature value is set to 7Fh (maximum). and are read and written as 2-byte values. When the MSB of
Therefore, both values are changed to the Temperature a register is read, the MSB and LSB are latched simultane-
register reading after the first update. Host software can ously and held for the duration of the Read Data command.
reset this register by writing it to its power-up value of This prevents updates to the LSB during the read, ensur-
807Fh. The maximum and minimum temperatures are ing synchronization between the 2 register bytes.
each stored as two’s complement 8-bit values with 1°C All locations are volatile RAM and lose their data in the
resolution. Figure 60 shows the MaxMinTemperature event of power loss. Data is retained during device shut-
register format. down. Each register has a power-on-reset value that it
defaults to at power-up. Word addresses designated as
TGAIN Register (2Ch)/TOFF Register (2Dh)
reserved return an undetermined when read. These loca-
The TGAIN and TOFF registers adjust the gain and offset tions should not be written.
of the temperature measurement A/D on the AIN pin to
convert the result to a temperature value by the following
equation:
Temperature Register = (AIN Register x
TGAIN Register/16384) + (TOFF Register x 2)
S MAX6 MAX5 MAX4 MAX3 MAX2 MAX1 MAX0 S MIN6 MIN5 MIN4 MIN3 MIN2 MIN1 MIN0
ing the acknowledge bit for presence of the device. More byte it requires with a No Acknowledge. This signals the
complex formats such as the write Data, read Data, and device that control of SDA is to remain with the master
Function command protocols write data, read data, and following the Acknowledge clock.
execute device-specific operations, respectively. All bytes
in each command format require the slave or the host sys- Write Data Protocol
tem to return an Acknowledge bit before continuing with The write Data protocol is used to write to register and
the next byte. Each function command definition outlines shadow RAM data to the IC starting at memory address
the required transaction format. Table 6 applies to the MAddr. Data0 represents the data written to MAddr,
transaction formats. Data1 represents the data written to MAddr + 1, and
DataN represents the last data byte written to MAddr +
Basic Transaction Formats N. The master indicates the end of a write transaction by
Write: S SAddr W A MAddr A DataL A DataH A P sending a STOP or Repeated START after receiving the
A write transaction transfers 1 or more data bytes to the last acknowledge bit:
device. The data transfer begins at the memory address S SAddr W A MAddr A DataL0 A DataH0 A DataL1
supplied in the MAddr byte. Control of the SDA signal is A DataH1 A … DataLN A DataHN A P
retained by the master throughout the transaction, except The MSb of the data to be stored at address MAddr can
for the Acknowledge cycles. be written immediately after the MAddr byte is acknowl-
Read: S SAddr W A MAddr A Sr SAddr R A DataL A DataH N P edged. Because the address is automatically incremented
after the least significant bit (LSb) of each byte is received
write Portion read Portion by the device, the MSb of the data at address MAddr + 1
can be written immediately after the acknowledgment of
A read transaction transfers one or more words from the data at address MAddr. If the bus master continues an
the IC. Read transactions are composed of two parts, a autoincremented write transaction beyond address FFh,
write portion followed by a read portion, and are therefore the device ignores the data. Data is also ignored on writes
inherently longer than a write transaction. The write por- to read-only addresses but not reserved addresses. Do
tion communicates the starting point for the read opera- not write to reserved address locations.
tion. The read portion follows immediately, beginning with
a Repeated START, Slave Address with R/W set to a 1. Read Data Protocol
Control of SDA is assumed by the IC beginning with the The read data protocol is used to read register and shad-
Slave Address Acknowledge cycle. Control of the SDA ow RAM data from the device starting at memory address
signal is retained by the device throughout the transaction, specified by MAddr. Data0 represents the data byte in
except for the Acknowledge cycles. The master indicates memory location MAddr, Data1 represents the data from
the end of a read transaction by responding to the last MAddr + 1, and DataN represents the last byte read by
the master:
Table 6. 2-Wire Protocol Key
S SAddr W A MAddr A Sr SAddr R A DataL0 A
KEY DESCRIPTION KEY DESCRIPTION DataH0 A DataL1 A DataH1 A …DataLN N DataHN N P
S START bit Sr Repeated START
Data is returned beginning with the most significant bit
Slave Address (MSb) of the data in MAddr. Because the address is
SAddr W R/W bit = 0
(7 bit)
automatically incremented after the LSb of each byte
FCmd
Function Command
R R/W bit = 1 is returned, the MSb of the data at address MAddr +1
byte is available to the host system immediately after the
Memory Address acknowledgment of the data at address MAddr. If the bus
MAddr P STOP bit
byte master continues to read beyond address FFh, the device
Data byte written by Data byte returned outputs data values of FFh. Addresses labeled Reserved
Data Data
Master by Slave in the memory map return undefined data. The bus mas-
Acknowledge bit— Acknowledge bit— ter terminates the read transaction at any byte boundary
A A by issuing a No Acknowledge followed by a STOP or
Master Slave
Repeated START.
No Acknowledge— No Acknowledge—
N N
Master Slave
Revision History
REVISION REVISION PAGES
DESCRIPTION
NUMBER DATE CHANGED
0 9/11 Initial release —
Added MAX17050 and added multicell application circuit information, updated
1, 7, 8, 11–41,
1 12/11 schematics, Ordering Information, layout guideline, and Thermistor Sharing Circuit
43, 45
section
Corrected error on TDFN layout diagram in Figure 8 and corrected error of hard-coded
2 4/12 14, 25, 43
bits of the LearnCFG register
Corrected error with FullSOCThr register formatting in Figure 25; corrected error with
3 8/12 TOFF register formatting in Figure 62; added clarification that ALRTp bit must equal 0 20, 30, 34, 42
to enable fast detection of cell removal
4 12/14 Updated Figure 6 12
Updated the Fuel-Gauge Learning and Age Support and LearnCFG Register (28h)
5 4/15 11, 12, 25, 26
sections and Figure 33
6 3/16 Corrected WLP package outline number 46
7 11/16 Updated front page title and applications 1
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are implied. Maxim Integrated reserves the right to change the circuitry and specifications without notice at any time. The parametric values (min and max limits)
shown in the Electrical Characteristics table are guaranteed. Other parametric values quoted in this data sheet are provided for guidance.
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