PRACTICE PAPER 14 (2024-25)

CHAPTER 14 ELECTRONIC
DEVICES
SUBJECT: PHYSICS MAX. MARKS : 40
CLASS : XII DURATION : 1½ hrs
General Instructions:
(i). All questions are compulsory.
(ii). This question paper contains 20 questions divided into five Sections A, B, C, D and E.
(iii). Section A comprises of 10 MCQs of 1 mark each. Section B comprises of 4 questions of 2 marks
each. Section C comprises of 3 questions of 3 marks each. Section D comprises of 1 question of 5
marks each and Section E comprises of 2 Case Study Based Questions of 4 marks each.
(iv). There is no overall choice.
(v). Use of Calculators is not permitted
SECTION – A
Questions 1 to 10 carry 1 mark each.
1. A pure Si crystal having 5 × 10 28 atoms m–3 is dopped with 1 ppm concentration of antimony. If
the concentration of holes in the doped crystal is found to be 4.5 × 10 9 m–3, the concentration (in
m–3) of intrinsic charge carriers in Si crystal is about
(a) 1.2 × 1015 (b) 1.5 × 1016 (c) 3.0× 1015 (d) 2.0 × 1016

2. The energy required by an electron to jump the forbidden band in silicon at room temperature is
about
(a) 0.01 eV (b) 0.05 eV (c) 0.7 eV (d) 1.1 eV

3. The threshold voltage for a p-n junction diode used in the circuit is 0.7 V. The type of biasing
and current in the circuit are

(a) Forward biasing, 0A (b) Reverse biasing, 0 A

(c) Forward biasing, 5mA (d) Reverse biasing, 2 mA

4. In an extrinsic semiconductor, the number density of holes is 4 × 1020 m –3. If the number
density of intrinsic carriers is 1.2 × 1015 m –3, the number density of electrons in it is:
(a) 1.8 × 109 m–3 (b) 2.4 × 1010 m–3 (c) 3.6 × 109 m–3 (d) 3.2 × 1010 m–3
5. The formation of depletion region in a p-n junction diode is due to:
(a) movement of dopant atoms
(b) diffusion of both electrons and holes
(c) drift of electrons only
(d) drift of holes only.

6. Which one of the following elements will require the highest energy to take out an electron from
them? Pb, Ge, C and Si
(a) Ge (b) C (c) Si (d) Pb

7. At equilibrium, in a p-n junction diode the net current is:

(a) due to diffusion of majority charge carriers
 (b) due to drift of minority charge carriers
(c) zero as diffusion and drift currents are equal and opposite
(d) zero as no charge carriers cross the junction.

8. In an n-type semiconductor, the donor energy level lies:

(a) at the centre of the energy gap
(b) just below the conduction band
(c) just above the valence band
(d) in the conduction band.

In the following questions 9 and 10, a statement of assertion (A) is followed by a statement of
reason (R). Mark the correct choice as:
(a) Both assertion (A) and reason (R) are true and reason (R) is the correct explanation of assertion (A).
(b) Both assertion (A) and reason (R) are true but reason (R) is not the correct explanation of assertion (A).
(c) Assertion (A) is true but reason (R) is false.
(d) Assertion (A) is false but reason (R) is true.

9. Assertion (A): The temperature coefficient of resistance is positive for metals and negative for
p-type semiconductors.
Reason (R): The charge carriers in metals are negatively charged, whereas the majority charge
carriers in p-type semiconductors are positively charged.

10. Assertion (A): The electrical conductivity of a semiconductor increases on doping.

Reason (R): Doping always increases the number of electrons in the semiconductor.

SECTION – B
Questions 11 to 14 carry 2 marks each.
11. Answer the following giving reasons:
(a) A p-n junction diode is damaged by a strong current.
(b) Impurities are added in intrinsic semiconductors.
OR
Draw V–I characteristics of a p–n junction diode. Explain, why the current under reverse bias is
almost independent of the applied voltage up to the critical voltage.
12. Distinguish between an intrinsic semiconductor and p-type semiconductor.
Give reason, why p-type semiconductor crystal is electrically neutral, although nh >> ne?
OR
(a) Carbon and silicon have the same lattice structure. Then why is carbon an insulator but
silicon a semiconductor?
(b) What type of extrinsic semiconductor is formed when
(i) germanium is doped with indium?
(ii) silicon is doped with bismuth?

13. (a) Which charge carriers in intrinsic semiconductor will have conduction?
(b) How does the resistance of a semiconductor change when heated?
OR
Draw the energy band diagram when intrinsic semiconductor (Ge) is doped with impurity atoms of
Antimony (Sb). Name the extrinsic semiconductor so obtained and majority charge carriers in it.

14. (a) Why a pure semiconductor behaves like an insulator at 0 K?

(b) Why is the energy gap much more in silicon than in germanium?
OR
 Answer the following questions.
(i) Can the potential barrier across a p-n junction be measured by simply connecting a voltmeter
across the junction?
(ii) Why are elemental dopants for Silicon or Germanium usually chosen from group 13 or group
15?
SECTION – C
Questions 15 to 17 carry 3 marks each.

15. Explain with the help of a diagram, how depletion region and potential barrier are formed in a
junction diode. How does (a) an increase in the doping concentration, and (b) biasing across the
junction, affect the width of the depletion layer?
OR
Draw energy band diagrams of n-type and p-type semiconductors at temperature T > 0 K,
depicting the donor and acceptor energy levels. Mention the significance of these levels.

16. Explain the following, giving reasons:

(a) A doped semiconductors is electrically neutral.
(b) In a p - n junction under equilibrium, there is no net current.
(c) In a diode, the reverse current is practically not dependent on the applied voltage.
OR
Explain briefly with the help of necessary diagrams, the forward and the reverse biasing of a p-n
junction diode. Also draw their characteristic curves in the two cases.
17. What will the effect of (i) forward biasing, and (ii) reverse biasing be on the width of depletion
layer in p-n junction diode?
OR
The graph of potential barrier versus width of depletion region for an unbiased diode is shown in
A. In comparison to A, graphs B and C are obtained after biasing the diode in different ways.
Identify the type of biasing in B and C and justify your answer.

SECTION – D
Questions 18 carry 5 marks.

18. Draw a labelled circuit diagram of a full-wave rectifier and briefly explain its working principle.
Give its input and output waveforms.
OR
(a) In the following diagram, which bulb out of B1 and B2 will glow and why?
 (b) Draw a diagram of an illuminated p-n junction solar cell.
(c) Explain briefly the three processes due to which generation of emf takes place in a solar cell.

SECTION – E (Case Study Based Questions)

Questions 19 to 20 carry 4 marks each.
19. A pure semiconductor like Ge or Si, when doped with a small amount of suitable impurity,
becomes an extrinsic semiconductor. In thermal equilibrium, the electron and hole concentration
in it are related to the concentration of intrinsic charge carriers. A p-type or n-type
semiconductor can be converted into a p-n junction by doping it with suitable impurity. Two
processes, diffusion and drift take place during formation of a p-n junction. A semiconductor
diode is basically a p-n junction with metallic contacts provided at the ends for the application of
an external voltage. A p-n junction allows currents to pass only in one direction when it is
forward biased. Due to this property, a diode is widely used to rectify alternating voltages, in
half-wave or full wave configuration.

(i) When Ge is doped with pentavalent impurity, the energy required to free the weakly bound
electron from the dopant is about:
(a) 0.001 eV (b) 0.01 eV (c) 0.72 eV (d) 1.1 eV

(ii) At a given temperature, the number of intrinsic charge carriers in a semiconductor is 2.0 ×
1010 cm–3. It is doped with pentavalent impurity atoms. As a result, the number of holes in it
becomes 8 × 103 cm–3. The number of electrons in the semiconductor is:
(a) 2 × 1024 m–3 (b) 4 × 1023 m–3 (c) 1 × 1022 m–3 (d) 5 × 1022 m–3

(iii) During the formation of a p-n junction:

(a) electrons diffuse from p-region into n-region and holes diffuse from n-region into p-region.
(b) both electrons and holes diffuse from n-region into p-region.
(c) electrons diffuse from n-region into p-region and holes diffuse from p-region into n-region.
(d) both electrons and holes diffuse from p-region into n-region.

(iv) Initially during the formation of a p-n junction:

(a) diffusion current is large and drift current is small.
(b) diffusion current is small and drift current is large.
(c) both the diffusion and the drift currents are large.
(d) both the diffusion and the drift currents are small.
OR
(v) An AC voltage V = 0.5 sin (100pt) volt is applied, in turn, across a half-wave rectifier and a
full-wave rectifier. The frequency of the output voltage across them respectively will be:
(a) 25 Hz, 50 Hz (b) 25 Hz, 100 Hz (c) 50 Hz, 50 Hz (d) 50 Hz, 100 Hz

20. Energy Band Gap: From Bohr’s atomic model, we know that the electrons have well defined
energy levels in an isolated atom. But due to interatomic interactions in a crystal, the electrons of
the outer shells are forced to have energies different from those in isolated atoms. Each energy
level splits into a number of energy levels forming a continuous band. The gap between top of
valence band and bottom of the conduction band in which no allowed energy levels for electrons
can exist is called energy gap.

(i) In an insulator energy band gap is

(a) Eg = 0 (b) Eg < 3 eV (c) Eg > 3 eV (d) None of the above

(ii) In a semiconductor, separation between conduction and valence band is of the order of
(a) 0 eV (b) 1 eV (c) 10 eV (d) 50 eV

(iii) Based on the band theory of conductors, insulators and semiconductors, the forbidden gap is
smallest in
(a) conductors (b) insulators (c) semiconductors (d) All of these

(iv) Carbon, silicon and germanium have four valence electrons each. At room temperature
which one of the following statements is most appropriate ?
(a) The number of free electrons for conduction is significant only in Si and Ge but small in C.
(b) The number of free conduction electrons is significant in C but small in Si and Ge.
(c) The number of free conduction electrons is negligibly small in all the three.
(d) The number of free electrons for conduction is significant in all the three.
OR
(v) Solids having highest energy level partially filled with electrons are
(a) semiconductor (b) conductor (c) insulator (d) none of these