YM YMP200N08Q

N-Channel Enhancement Mode Power MOSFET

General Description Product Summary
The YMP200N08 uses advanced trench technology and BVDSS typ. 80 V
design to provide excellent RDS(ON) with low gate charge. RDS(ON) typ. 3 mΩ
This device is suitable for use in PWM, load switching and max. 4 mΩ
general purpose applications. ID 200 A

Features
● VDS=80V；ID=200A@ VGS =10V； 100% UIS TESTED!
RDS(ON)< 3 mΩ @ VGS =10V
● Special process technology for high ESD capability
● Special designed for Convertors and power controls
● High density cell design for ultra low Rdson
● Fully characterized Avalanche voltage and current
● Good stability and uniformity with high EAS
● Excellent package for good heat dissipation

Application
● Power switching application
● Hard Switched and High Frequency Circuits TO-247 top view Schematic diagram
● Uninterruptible Power Supply

Package Marking And Ordering Information

Device Marking Device Device Package Reel Size Tape width Quantity
YMP200N08 YMP200N08 TO-247 - - -

Table 1. Absolute Maximum Ratings (TA=25℃)

Parameter Symbol Value Unit
Drain-Source Voltage (VGS=0V） VDS 80 V
Gate-Source Voltage (VDS=0V) VGS ±25 V
Drain Current (DC) at Tc=25℃ ID (DC) 200 A
Drain Current (DC) at Tc=100℃ ID (DC) 130 A
(Note 1)
Drain Current-Continuous@ Current-Pulsed IDM (pluse) 430 A
Maximum Power Dissipation(Tc=25℃) PD 300 W
Derating factor 1.33 W/℃
(Note 2)
Single pulse avalanche energy EAS 2000 mJ
Operating Junction and Storage Temperature Range TJ,TSTG -55 To 175 ℃
Notes 1.Repetitive Rating: Pulse width limited by maximum junction temperature
2.EAS condition：Tj=25℃,VDD=28V,VG=10V,L= 1mH ,R g=25Ω;

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Table 2. Thermal Characteristic

Parameter Symbol Value Unit
Thermal Resistance，Junction-to-Case（Note2) ） RthJC 0.75 ℃/W

Table 3. Electrical Characteristics (TA=25℃unless otherwise noted)

Parameter Symbol Condition Min Typ Max Unit
Off Characteristics
Drain-Source Breakdown Voltage BVDSS VGS=0V ID=250μA 80 V
Zero Gate Voltage Drain Current(Tc=25℃) IDSS VDS=-24V,VGS=0V 1 μA
Gate-Body Leakage Current IDSS VGS=±25V,VDS=0V ±100
10 μA
On Characteristics (Note 3)
Gate Threshold Voltage VGS(th) VDS=VGS,ID=250μA 2 - 4 V
Drain-Source On-State Resistance RDS(ON) VGS=10V, ID=40A 3 4 mΩ
Dynamic Characteristics
Forward Transconductance gFS VDS=25V,ID=40A 50 S
Input Capacitance Clss 5000 PF
VDS=30V,VGS=0V,
Output Capacitance Coss 860 PF
F=1.0MHz
Reverse Transfer Capacitance Crss 480 PF
Total Gate Charge Qg 106 nC
VDS=30V,ID=40A,
Gate-Source Charge Qgs 20 nC
VGS=10V
Gate-Drain Charge Qgd 35 nC
Switching times
Turn-on Delay Time td(on) 34 50 nS
Turn-on Rise Time tr VDD=30V,ID=1A,RL=30Ω 30 46 nS
Turn-Off Delay Time td(off) VGS=10V,RG= 4 Ω 124 200 nS
Turn-Off Fall Time tf 64 116 nS
Source- Drain Diode Characteristics
Source-drain current(Body Diode) ISD 40 A
(Note 3)
Forward on voltage VSD Tj=25℃,ISD=20A,VGS=0V 0.8 1.3 V
(Note 1)
Reverse Recovery Time trr 74 nS
Tj=25℃,IF=40A,di/dt=100A/μs
Reverse Recovery Charge Qrr 140 nC
Forward Turn-on Time ton Intrinsic turn-on time is negligible(turn-on is dominated by LS+LD)
Notes 3.Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%, R G =25 Ω, Starting Tj=25℃

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Test circuit
1）EAS test Circuits

2）Gate charge test Circuit:

3）Switch Time Test Circuit：

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Typical Characteristics

Drain Current
Safe Operation Area

210

ID - Drain Current (A)

ID - Drain Current (A)

VDS - Drain-Source Voltage (V) Tj - Junction Temperature (°C)

Thermal Transient Impedance

Normalized Effective Transient

Square Wave Pulse Duration (sec)

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Typical Characteristics (Cont.)

Output Characteristics Drain-Source On Resistance

225

200

RDS(ON) - On Resistance (mΩ)

175
ID - Drain Current (A)

150

125

100

75

50

25

VDS - Drain-Source Voltage (V) ID - Drain Current (A)

Drain-Source On Resistance Gate Threshold Voltage

RDS(ON) - On - Resistance (MR)

Normalized Threshold Vlotage

VGS - Gate - Source Voltage (V) Tj - Junction Temperature (°C)

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Typical Characteristics (Cont.)

Drain-Source On Resistance Source-Drain Diode Forward

Normalized On Resistance

IS - Source Current (A)

RON@T=25ºC:2.8mΩ

Tj - Junction Temperature (°C) VSD - Source-Drain Voltage (V)

Capacitance Gate Charge

VGS - Gate-Source Voltage (V)
C - Capacitance (pF)

VDS - Drain-Source Voltage (V) QG - Gate Charge (nC)

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