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BJT Slide

The document provides an overview of transistors, including their structure, types (npn and pnp), and working principles. It discusses the operation of transistors as amplifiers and switches, as well as various biasing techniques to stabilize their performance. Additionally, it covers transistor connections, current relationships, and includes assignments for further study.

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0% found this document useful (0 votes)
39 views61 pages

BJT Slide

The document provides an overview of transistors, including their structure, types (npn and pnp), and working principles. It discusses the operation of transistors as amplifiers and switches, as well as various biasing techniques to stabilize their performance. Additionally, it covers transistor connections, current relationships, and includes assignments for further study.

Uploaded by

zainarahmans632
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
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Download as PDF, TXT or read online on Scribd
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Analog Electronics

Course No: EEE 2117

Presented by :
Robin Sarker
Lecturer, EEE, KUET

Slide Courtesy: Arefin Ahamed Shuvo, Assistant Professor, EEE,KUET

Khulna University of Engineering & Technology (KUET)


Department of Electrical and Electronic Engineering(EEE) 1
What is a Transistor?
A transistor consists of two P-n junctions formed by sandwiching either P-type or n-type
semiconductor between a pair of opposite types.

There are two types of transistors:


• npn
• pnp
Three Terminals:
• Emitter
• Base
• Collector

Symbols

There are two p-n junctions. Therefore a transistor may be regarded as a combination of two diodes
connected back to back.
Facts to be Remembered
 Middle Section is very thin layer. This is the most important factor in the function of a transistor.

 The Emitter is heavily doped


Base is very lightly doped
n Collector p
Collector is moderately doped

 The Junction between Emitter Base


and Base may be called Emitter-
Base diode and junction p • Very Thin
• Very lightly n
between Collector and Base is Doped
called Collector–Base diode.

 The Emitter-Base diode is


n p
always forward biased. Emitter

 The Collector-Base Diode is always reverse Biased.


Working Principle of Transistor
Working Principle of Transistor(npn)
Working Principle of Transistor(npn)
To understand how a transistor operates, let’s examine what happens inside the npn structure.

The forward bias causes the electrons in the n-type emitter to flow towards the base. This constitutes the
emitter current IE. As these electrons flow through the p-type base, they tend to combine with holes. As
the base is lightly doped and very thin, therefore, only a few electrons (less than 5%) combine with holes
to constitute base current IB. The remainder (more than 95%) cross over into the collector region to
constitute collector current IC. In this way, almost the entire emitter current flows in the collector circuit. It
is clear that emitter current is the sum of collector and base currents.
Working Principle of Transistor(npn)
Transistor Current

Emitter current is the sum of the collector and base currents:


𝐈𝑬 = 𝐈𝑪 + 𝐈𝑩
𝐈𝑬 ≈ 𝐈𝐜 𝐁𝐞𝐜𝐚𝐮𝐬𝐞 𝐈𝐁 𝐢𝐬 𝐧𝐞𝐠𝐥𝐢𝐠𝐢𝐛𝐥𝐲 𝐬𝐦𝐚𝐥𝐥
∴ 𝐈𝑬 > 𝐈𝐜 > 𝐈𝑩
Transistor Connection
Transistor can be connected in a circuit by following three ways:
1. Common Base Connection
2. Common Emitter Connection
3. Common Collector Connection
Common Base Connection:
[Typical value is between 0.9 to 0.99]
Common Base Characteristics
Input Characteristic: Output Characteristic:
Common Emitter Connection:
Ic
Common Emitter Characteristics
Input Characteristic: Output Characteristic:
Common Collector Connection:
Current amplification factor,
Relation between
Transistor As an amplifier
Suppose, A change of 0.1 V signal voltage produces a
change of 1 mA of emitter current

So, 𝐈𝐂 ≈ 𝟏 𝐦𝐀
∴ 𝑽𝑹𝒄 = 5kΩ × 𝟏 𝒎𝑨 = 5 V

Input: Low Resistance (Forward Biased)


Output: High Resistance(Reverse Biased)

Vin = 0.1 V
Vout = 5 V

Gain = 5/0.1 = 50

Basic amplifying action is produced by transferring a current from a low resistance to a high resistance
circuit. Consequently the name transistor is given to the device by combining the two terms:
Transfer+ Resistor = Transistor
Transistor Operating Regions

Transistor works as an amplifier in Active region &


Acts as a Switch in cutoff & saturation region.
Biasing
Biasing
Biasing: The DC voltages applied to a transistor in order to turn it on so that it can amplify the
AC signal.

The DC input establishes an


operating or quiescent point
called the Q-point.

Which point is best?


DC Biasing
Circuits
 Fixed-bias circuit
 Emitter-stabilized bias circuit
 Voltage divider bias circuit
 DC bias with voltage feedback
Fixed
Bias
The Base-Emitter
Loop
From Kirchhoff’s voltage law:

+VCC – IBRB – VBE = 0

Solving for base current:

VCC– VBE
IB = RB
Collector-Emitter
Loop
Collector current:

I C  I B

From Kirchhoff’s voltage law:

VCE  VCC  I C R C
Emitter-Stabilized Bias Circuit

Adding a resistor
(RE) to the emitter
circuit stabilizes the
bias circuit.
Base-Emitter
Loop
From Kirchhoff’s voltage law:
 VCC - I B R B - VBE - I E R E 0

Since IE = ( + 1)IB:

VCC - I B R B – VBE -(  1)I B R E  0

Solving for IB:


VCC -VBE
IB 
R B  (  1)RE
Collector-Emitter Loop
From Kirchhoff’s voltage law:
I R V I R V 0
E E CE C C CC

Since IE  IC:
VCE  VCC – I C (R C  R E )

Also:
VE  I E R E
VC  VCE  VE  VCC - I C R C
VB  VCC – I B R B  VBE  VE
Saturation
Level

The endpoints can be determined from the load line.


VCEcutoff: ICsat:
VCE  VCC VCE  0 V
I C  0 mA VCC
IC 
RC  R E
Emitter-Stabilized Bias Circuit
Improved Biased Stability
• The process of making operating point independent of temperature changes or
variations in transistor parameters is known as stabilisation
Emitter-Stabilized Bias Circuit
Voltage Divider
Bias
This is a very stable bias circuit.

The currents and voltages are nearly


independent of any variations in .
Exact Analysis
DC Bias with Voltage
Feedback
Another way to improve the
stability of a bias circuit is to add
a feedback path from collector to
base.

In this bias circuit the Q-point is


only slightly dependent on the
transistor beta, .
Base-Emitter
Loop
From Kirchhoff’s voltage law:
VCC – ICRC– I B R B – VBE – I E R E  0

Where IB << IC:


I'  I  I  I
C C B C
Knowing IC = IB and IE  IC, the loop
equation becomes:
VCC – I B R C  I B R B  VBE  I B R E  0

Solving for IB:


VCC  VBE
IB 
R B  (RC  R E )
Collector-Emitter Loop

Applying Kirchoff’s voltage law:

RE IE + VCE + I’CRC – VCC = 0

Since I’C IC and IC =IB:

IC(RC + RE) + VCE – VCC =0

Solving for VCE:

VCE = VCC – IC(RC + RE)


Base-Emitter Bias Analysis

Transistor Saturation Level


VCC
ICsat  ICmax 
RC  RE

Load Line Analysis


Cutoff:

VCE  VCC
I C  0mA
The analysis for pnp transistor biasing circuits is the same
as that for npn transistor circuits. The only difference is that
the currents are flowing in the opposite direction.

PNP Transistors
Solution:
Pnp transistor: = 82||16 = 13.38 kΩ

×
= = −3.592 𝑉

𝑉 = −3.592 𝑉
𝑉 = 𝑉 − 𝑉 = -3.592+0.7 = -2.89 V

1/31/2025 56
Load Line Analysis
Load Line Analysis
Load Line Analysis
Design Problem: Given that ICQ = 2 mA and VCEQ = 10 V, determine R1 and RC for
the network
Assignments

Exercise from (i)V.K metha book (9th chapter): 3,5,7,16


(ii) Boylestad (chapter 4): 10,11,18,27,41,43 (240-246 Pages)

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