IGBT

HighspeedIGBTinTrenchandFieldstoptechnology

IGP20N60H3
600Vhighspeedswitchingseriesthirdgeneration

Datasheet

IndustrialPowerControl
 IGP20N60H3
Highspeedswitchingseriesthirdgeneration

HighspeedIGBTinTrenchandFieldstoptechnology

Features: C
TRENCHSTOPTMtechnologyoffering
•verylowturn-offenergy
•lowVCEsat
•lowEMI
•maximumjunctiontemperature175°C G
•qualifiedaccordingtoJEDECfortargetapplications E
•Pb-freeleadplating,halogen-freemouldcompound,RoHS
compliant C
•completeproductspectrumandPSpiceModels:
http://www.infineon.com/igbt/

Applications:

•uninterruptiblepowersupplies
•weldingconverters
•converterswithhighswitchingfrequency

G
C E

KeyPerformanceandPackageParameters
Type VCE IC VCEsat,Tvj=25°C Tvjmax Marking Package
IGP20N60H3 600V 20A 1.95V 175°C G20H603 PG-TO220-3

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TableofContents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical Characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Package Drawing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .12
Testing Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14

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Highspeedswitchingseriesthirdgeneration

Maximumratings
Parameter Symbol Value Unit
Collector-emittervoltage,Tvj≥25°C VCE 600 V
DCcollectorcurrent,limitedbyTvjmax
TC=25°C IC 40.0 A
TC=100°C 20.0
Pulsedcollectorcurrent,tplimitedbyTvjmax ICpuls 80.0 A
Turn off safe operating area
- 80.0 A
VCE≤600V,Tvj≤175°C,tp=1µs
Gate-emitter voltage VGE ±20 V
Short circuit withstand time
VGE=15.0V,VCC≤400V
Allowed number of short circuits < 1000 tSC µs
Time between short circuits: ≥ 1.0s
Tvj=150°C 5
PowerdissipationTC=25°C 170.0
Ptot W
PowerdissipationTC=100°C 85.0
Operating junction temperature Tvj -40...+175 °C
Storage temperature Tstg -55...+150 °C
Soldering temperature,
°C
wave soldering 1.6 mm (0.063 in.) from case for 10s 260
Mounting torque, M3 screw
M 0.6 Nm
Maximum of mounting processes: 3

ThermalResistance
Parameter Symbol Conditions Max.Value Unit
Characteristic
IGBT thermal resistance,
Rth(j-c) 0.88 K/W
junction - case
Thermal resistance
Rth(j-a) 62 K/W
junction - ambient

ElectricalCharacteristic,atTvj=25°C,unlessotherwisespecified
Value
Parameter Symbol Conditions Unit
min. typ. max.
StaticCharacteristic
Collector-emitter breakdown voltage V(BR)CES VGE=0V,IC=2.00mA 600 - - V
VGE=15.0V,IC=20.0A
Tvj=25°C - 1.95 2.40
Collector-emitter saturation voltage VCEsat V
Tvj=125°C - 2.30 -
Tvj=175°C - 2.50 -
Gate-emitter threshold voltage VGE(th) IC=0.29mA,VCE=VGE 4.1 5.1 5.7 V
VCE=600V,VGE=0V
Zero gate voltage collector current ICES Tvj=25°C - - 40.0 µA
Tvj=175°C - - 1500.0
Gate-emitter leakage current IGES VCE=0V,VGE=20V - - 100 nA
Transconductance gfs VCE=20V,IC=20.0A - 10.9 - S

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ElectricalCharacteristic,atTvj=25°C,unlessotherwisespecified
Value
Parameter Symbol Conditions Unit
min. typ. max.
DynamicCharacteristic
Input capacitance Cies - 1100 -
Output capacitance Coes VCE=25V,VGE=0V,f=1MHz - 70 - pF
Reverse transfer capacitance Cres - 32 -
VCC=480V,IC=20.0A,
Gate charge QG - 120.0 - nC
VGE=15V
Internal emitter inductance
measured 5mm (0.197 in.) from LE - 7.0 - nH
case
Short circuit collector current VGE=15.0V,VCC≤400V,
Max. 1000 short circuits IC(SC) tSC≤5µs - - A
Time between short circuits: ≥ 1.0s Tvj=150°C 120

SwitchingCharacteristic,InductiveLoad
Value
Parameter Symbol Conditions Unit
min. typ. max.
IGBTCharacteristic,atTvj=25°C
Turn-on delay time td(on) Tvj=25°C, - 16 - ns
Rise time tr VCC=400V,IC=20.0A, - 20 - ns
VGE=0.0/15.0V,
Turn-off delay time td(off) rG=14.6Ω,Lσ=75nH, - 194 - ns
Fall time tf Cσ=30pF - 11 - ns
Lσ,CσfromFig.E
Turn-on energy Eon Energy losses include “tail” and - 0.45 - mJ
Turn-off energy Eoff diode (IKP20N60H3) reverse - 0.24 - mJ
recovery.
Total switching energy Ets - 0.69 - mJ

SwitchingCharacteristic,InductiveLoad
Value
Parameter Symbol Conditions Unit
min. typ. max.
IGBTCharacteristic,atTvj=175°C
Turn-on delay time td(on) Tvj=175°C, - 16 - ns
Rise time tr VCC=400V,IC=20.0A, - 15 - ns
VGE=0.0/15.0V,
Turn-off delay time td(off) rG=14.6Ω,Lσ=75nH, - 227 - ns
Fall time tf Cσ=30pF - 14 - ns
Lσ,CσfromFig.E
Turn-on energy Eon Energy losses include “tail” and - 0.60 - mJ
Turn-off energy Eoff diode (IKP20N60H3) reverse - 0.36 - mJ
recovery.
Total switching energy Ets - 0.96 - mJ

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Highspeedswitchingseriesthirdgeneration

60 100

50
IC,COLLECTORCURRENT[A]

IC,COLLECTORCURRENT[A]
tp=1µs

40 10 10µs

50µs
TC=80°
30 100µs
TC=110°
200µs
TC=80°
500µs
20 1
TC=110°
DC

10

0 0.1
1 10 100 1000 1 10 100 1000
f,SWITCHINGFREQUENCY[kHz] VCE,COLLECTOR-EMITTERVOLTAGE[V]
Figure 1. Collectorcurrentasafunctionofswitching Figure 2. Forwardbiassafeoperatingarea
frequency (D=0,TC=25°C,Tj≤175°C;VGE=15V)
(Tj≤175°C,D=0.5,VCE=400V,VGE=15/0V,
rG=14,6Ω)

180 40

160 35

140
30
IC,COLLECTORCURRENT[A]
Ptot,POWERDISSIPATION[W]

120
25

100
20
80

15
60

10
40

20 5

0 0
25 50 75 100 125 150 175 25 50 75 100 125 150 175
TC,CASETEMPERATURE[°C] TC,CASETEMPERATURE[°C]
Figure 3. Powerdissipationasafunctionofcase Figure 4. Collectorcurrentasafunctionofcase
temperature temperature
(Tj≤175°C) (VGE≥15V,Tj≤175°C)

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Highspeedswitchingseriesthirdgeneration

80 80

70 VGE=20V 70 VGE=20V

17V 17V
60 60
IC,COLLECTORCURRENT[A]

IC,COLLECTORCURRENT[A]
15V 15V

13V 13V
50 50
11V 11V

9V 9V
40 40
7V 7V

30 5V 30 5V

20 20

10 10

0 0
0 1 2 3 4 5 6 0 1 2 3 4 5 6 7 8
VCE,COLLECTOR-EMITTERVOLTAGE[V] VCE,COLLECTOR-EMITTERVOLTAGE[V]
Figure 5. Typicaloutputcharacteristic Figure 6. Typicaloutputcharacteristic
(Tj=25°C) (Tj=175°C)

70 4.0
Tj=25°C IC=10A
Tj=175°C IC=20A
VCE(sat),COLLECTOR-EMITTERSATURATION[V]

IC=40A
60
3.5
IC,COLLECTORCURRENT[A]

50
3.0

40

2.5

30

2.0
20

1.5
10

0 1.0
5 6 7 8 9 10 11 12 0 25 50 75 100 125 150 175
VGE,GATE-EMITTERVOLTAGE[V] Tj,JUNCTIONTEMPERATURE[°C]
Figure 7. Typicaltransfercharacteristic Figure 8. Typicalcollector-emittersaturationvoltageas
(VCE=20V) afunctionofjunctiontemperature
(VGE=15V)

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Highspeedswitchingseriesthirdgeneration

1000
td(off)
tf
td(on)
tr

td(off)
tf
td(on)
t,SWITCHINGTIMES[ns]

t,SWITCHINGTIMES[ns]
tr

100

100

10 10
0 5 10 15 20 25 30 35 40 5 10 15 20 25 30 35 40 45 50
IC,COLLECTORCURRENT[A] rG,GATERESISTOR[Ω]
Figure 9. Typicalswitchingtimesasafunctionof Figure 10. Typicalswitchingtimesasafunctionofgate
collectorcurrent resistor
(ind.load,Tj=175°C,VCE=400V,VGE=15/0V, (ind.load,Tj=175°C,VCE=400V,VGE=15/0V,
rG=14,6Ω,testcircuitinFig.E) IC=20A,testcircuitinFig.E)

6.0
typ.
min.
VGE(th),GATE-EMITTERTHRESHOLDVOLTAGE[V]

5.5 max.

td(off)
100 tf 5.0
td(on)
t,SWITCHINGTIMES[ns]

tr
4.5

4.0

10 3.5

3.0

2.5

1 2.0
25 50 75 100 125 150 175 0 25 50 75 100 125 150 175
Tj,JUNCTIONTEMPERATURE[°C] Tj,JUNCTIONTEMPERATURE[°C]
Figure 11. Typicalswitchingtimesasafunctionof Figure 12. Gate-emitterthresholdvoltageasafunction
junctiontemperature ofjunctiontemperature
(ind.load,VCE=400V,VGE=15/0V,IC=20A, (IC=0.29mA)
rG=14,6Ω,testcircuitinFig.E)
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Highspeedswitchingseriesthirdgeneration

2.5 2.00
Eoff Eoff
Eon Eon
Ets 1.75 Ets
E,SWITCHINGENERGYLOSSES[mJ]

E,SWITCHINGENERGYLOSSES[mJ]
2.0
1.50

1.25
1.5

1.00

1.0
0.75

0.50
0.5

0.25

0.0 0.00
4 8 12 16 20 24 28 32 36 40 5 10 15 20 25 30 35 40 45 50
IC,COLLECTORCURRENT[A] rG,GATERESISTOR[Ω]
Figure 13. Typicalswitchingenergylossesasa Figure 14. Typicalswitchingenergylossesasa
functionofcollectorcurrent functionofgateresistor
(ind.load,Tj=175°C,VCE=400V,VGE=15/0V, (ind.load,Tj=175°C,VCE=400V,VGE=15/0V,
rG=14,6Ω,testcircuitinFig.E) IC=20A,testcircuitinFig.E)

1.0 1.50
Eoff Eoff
Eon Eon
Ets Ets
1.25
E,SWITCHINGENERGYLOSSES[mJ]

E,SWITCHINGENERGYLOSSES[mJ]

0.8

1.00

0.6

0.75

0.4

0.50

0.2
0.25

0.0 0.00
25 50 75 100 125 150 175 200 250 300 350 400 450
Tj,JUNCTIONTEMPERATURE[°C] VCE,COLLECTOR-EMITTERVOLTAGE[V]
Figure 15. Typicalswitchingenergylossesasa Figure 16. Typicalswitchingenergylossesasa
functionofjunctiontemperature functionofcollectoremittervoltage
(indload,VCE=400V,VGE=15/0V,IC=20A, (ind.load,Tj=175°C,VGE=15/0V,IC=20A,
rG=14,6Ω,testcircuitinFig.E) rG=14,6Ω,testcircuitinFig.E)
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Highspeedswitchingseriesthirdgeneration

16
120V
480V
14

1000
VGE,GATE-EMITTERVOLTAGE[V]

12
Cies
Coes

C,CAPACITANCE[pF]
Cres
10

100
6

0 10
0 20 40 60 80 100 120 140 0 10 20 30
QGE,GATECHARGE[nC] VCE,COLLECTOR-EMITTERVOLTAGE[V]
Figure 17. Typicalgatecharge Figure 18. Typicalcapacitanceasafunctionof
(IC=20A) collector-emittervoltage
(VGE=0V,f=1MHz)

300 15
IC(SC),SHORTCIRCUITCOLLECTORCURRENT[A]

tSC,SHORTCIRCUITWITHSTANDTIME[µs]

250 12

200 9

150 6

100 3

50 0
10 12 14 16 18 20 10 11 12 13 14 15
VGE,GATE-EMITTERVOLTAGE[V] VGE,GATE-EMITTERVOLTAGE[V]
Figure 19. Typicalshortcircuitcollectorcurrentasa Figure 20. Shortcircuitwithstandtimeasafunctionof
functionofgate-emittervoltage gate-emittervoltage
(VCE≤400V,startatTj=25°C) (VCE≤400V,startatTj≤150°C)

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Highspeedswitchingseriesthirdgeneration

1
ZthJC,TRANSIENTTHERMALIMPEDANCE[K/W]

D=0.5
0.2
0.1 0.1
0.05
0.02
0.01
single pulse

0.01

i: 1 2 3 4
ri[K/W]: 0.07041042 0.3070851 0.3198984 0.1871538
τi[s]: 9.6E-5 6.8E-4 0.01084623 0.06925485

0.001
1E-6 1E-5 1E-4 0.001 0.01 0.1 1
tp,PULSEWIDTH[s]
Figure 21. IGBTtransientthermalimpedance
(D=tp/T)

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Highspeedswitchingseriesthirdgeneration

PG-TO220-3

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 IGP20N60H3
Highspeedswitchingseriesthirdgeneration

vGE(t)
90% VGE
a b

a b

t
iC(t)

90% IC
90% IC

10% IC 10% IC
t

vCE(t)

td(off) tf td(on) tr
t

vGE(t)
90% VGE

10% VGE
t
iC(t)

2% IC
t

vCE(t)

2% VCE
t1 t2 t3 t4
t

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 IGP20N60H3
Highspeedswitchingseriesthirdgeneration

RevisionHistory
IGP20N60H3

Revision:2014-03-11,Rev.2.2
Previous Revision
Revision Date Subjects (major changes since last revision)
1.1 2010-02-01 -
1.2 2010-07-26 Preliminary datasheet
2.1 2013-12-09 New value IRmax limit at 175°C
2.2 2014-03-11 Max ratings Vce, Tvj ≥ 25°C

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81726München,Germany
©2014InfineonTechnologiesAG
AllRightsReserved.

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Theinformationgiveninthisdocumentshallinnoeventberegardedasaguaranteeofconditionsorcharacteristics.
Withrespecttoanyexamplesorhintsgivenherein,anytypicalvaluesstatedhereinand/oranyinformationregardingthe
applicationofthedevice,InfineonTechnologiesherebydisclaimsanyandallwarrantiesandliabilitiesofanykind,
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Forfurtherinformationontechnology,deliverytermsandconditionsandprices,pleasecontactthenearestInfineon
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Warnings
Duetotechnicalrequirements,componentsmaycontaindangeroussubstances.Forinformationonthetypesin
question,pleasecontactthenearestInfineonTechnologiesOffice.
TheInfineonTechnologiescomponentdescribedinthisDataSheetmaybeusedinlife-supportdevicesorsystems
and/orautomotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofInfineon
Technologies,ifafailureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlife-support,
automotive,aviationandaerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.Life
supportdevicesorsystemsareintendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustain
and/orprotecthumanlife.Iftheyfail,itisreasonabletoassumethatthehealthoftheuserorotherpersonsmaybe
endangered.

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