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Nmos

The document outlines the design and simulation setup for NMOS, DGMOS, and TFET devices, including the creation of various silicon and dielectric regions, contact definitions, and refinement placements. It specifies the electrical properties, mesh generation, and simulation parameters necessary for analyzing the devices' performance. Additionally, it includes commands for saving models and plotting results for further evaluation.

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0105ec201049
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21 views16 pages

Nmos

The document outlines the design and simulation setup for NMOS, DGMOS, and TFET devices, including the creation of various silicon and dielectric regions, contact definitions, and refinement placements. It specifies the electrical properties, mesh generation, and simulation parameters necessary for analyzing the devices' performance. Additionally, it includes commands for saving models and plotting results for further evaluation.

Uploaded by

0105ec201049
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as ODT, PDF, TXT or read online on Scribd
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NMOS

(sdegeo:create-rectangle (position 0 0 0) (position 0.1 0.03 0) "Silicon" "region_1")

(sdegeo:create-rectangle (position 0 0.015 0) (position 0.035 0.03 0) "Silicon" "region_2")

(sdegeo:create-rectangle (position 0.035 0.015 0) (position 0.065 0.03 0) "Silicon" "region_3")

(sdegeo:create-rectangle (position 0.065 0.015 0) (position 0.1 0.03 0) "Silicon" "region_4")

(sdegeo:create-rectangle (position 0.035 0.03 0) (position 0.065 0.032 0) "SiO2" "region_5")

(sdegeo:create-rectangle (position 0.035 0.032 0) (position 0.065 0.034 0) "PolySilicon"


"region_6")

(sdegeo:create-rectangle (position 0 0 0) (position 0.1 0.015 0) "Silicon" "region_7")

(sdegeo:define-contact-set "g" 4 (color:rgb 0 0 0 ) "##")

(sdegeo:define-contact-set "s" 4 (color:rgb 0 0 1 ) "##")

(sdegeo:define-contact-set "d" 4 (color:rgb 0 1 0 ) "##")

(sdegeo:set-current-contact-set "g")

(sdegeo:set-contact-edges (list (car (find-edge-id (position 0.05 0.034 0)))) "g")

(sdegeo:set-current-contact-set "s")

(sdegeo:set-contact-edges (list (car (find-edge-id (position 0.0175 0.03 0)))) "s")

(sdegeo:set-current-contact-set "d")

(sdegeo:set-contact-edges (list (car (find-edge-id (position 0.0825 0.03 0)))) "d")

(sdedr:define-refeval-window "RefEvalWin_1" "Rectangle" (position 0 0.015 0) (position 0.035


0.03 0))

(sdedr:define-refeval-window "RefEvalWin_2" "Rectangle" (position 0.035 0.015 0) (position


0.065 0.03 0))

(sdedr:define-refeval-window "RefEvalWin_3" "Rectangle" (position 0.065 0.015 0) (position 0.1


0.03 0))

(sdedr:define-refeval-window "RefEvalWin_5" "Rectangle" (position 0 0 0) (position 0.1 0.015 0))

(sdedr:define-refinement-size "RefinementDefinition_s" 0.005 0.005 0.001 0.001 )

(sdedr:define-refinement-placement "RefinementPlacement_s" "RefinementDefinition_s" (list


"window" "RefEvalWin_1" ) )
(sdedr:define-refinement-size "RefinementDefinition_c" 0.005 0.005 0.001 0.001 )

(sdedr:define-refinement-placement "RefinementPlacement_c" "RefinementDefinition_c" (list


"window" "RefEvalWin_2" ) )

(sdedr:define-refinement-size "RefinementDefinition_d" 0.005 0.005 0.001 0.001 )

(sdedr:define-refinement-placement "RefinementPlacement_d" "RefinementDefinition_d" (list


"window" "RefEvalWin_3" ) )

(sdedr:define-constant-profile "ConstantProfileDefinition_s" "PhosphorusActiveConcentration"


1e+20)

(sdedr:define-constant-profile-placement "ConstantProfilePlacement_s"
"ConstantProfileDefinition_s" "RefEvalWin_1")

(sdedr:define-constant-profile "ConstantProfileDefinition_c" "BoronActiveConcentration" 1e+18)

(sdedr:define-constant-profile-placement "ConstantProfilePlacement_c"
"ConstantProfileDefinition_c" "RefEvalWin_2")

(sdedr:define-constant-profile "ConstantProfileDefinition_d" "PhosphorusActiveConcentration"


1e+20)

(sdedr:define-constant-profile-placement "ConstantProfilePlacement_d"
"ConstantProfileDefinition_d" "RefEvalWin_3")

(sdedr:define-constant-profile "ConstantProfileDefinition_b" "BoronActiveConcentration" 1e+19)

(sdedr:define-constant-profile-placement "ConstantProfilePlacement_b"
"ConstantProfileDefinition_b" "RefEvalWin_5")

;(sde:build-mesh "" "n@node@")

(sde:save-model "/home/caduser/STDB/tmp/nmos/nmos")

(sde:set-meshing-command "snmesh")
(sde:build-mesh "" "/home/caduser/STDB/tmp/nmos/nmos")

File {
* Input Files
*Grid="@tdr@"
Grid="nmos_msh.tdr"
Parameter="sdevice.par"
* Output Files
Current = "nmos"
Plot = "nmos"
Output = "nmos"
}
electrode{
{Name="s" voltage=0}
{Name="d" voltage=1}
{Name="g" voltage=-1 Workfunction=4.2}

*barrier=-0.55}
}
Physics
{
Fermi
EffectiveIntrinsicDensity(OldSlotboom)

Mobility(
DopingDependence
*HighFieldSaturation
Enormal
)
Recombination(
SRH(DopingDependence)
*eAvalanche(CarrierTempDrive)
*hAvalanche(Eparallel)
)

}
Plot{
eDensity hDensity
TotalCurrent/Vector eCurrent/Vector hCurrent/Vector
eMobility hMobility
eVelocity hVelocity
Potential SpaceCharge
Electrostaticpotential
ElectricField/Vector
Doping DonorConcentration AcceptorConcentration
SRH Auger
Band2Band
AvalancheGeneration eAvalancheGeneration hAvalancheGeneration
BandGap
EffectiveBandGap

BandGapNarrowing
Affinity
ConductionBand ValenceBand
}
Math {
RelErrControl
Digits=5
ErRef(electron)=1.e10
ErRef(hole)=1.e10
Notdamped=160
Iterations=1000
DirectCurrent
Method =ILS
-CheckUndefinedModels
}
Solve {
*-- Buildup of initial solution:
*NewCurrentFile=""
Coupled(Iterations=1000){ Poisson }
Coupled{ Poisson Electron Hole }
Quasistationary(
MinStep=1e-36 MaxStep=0.005
Goal{ Name="g" Voltage=1}
Goal{ Name="d" Voltage=1}
){ Coupled{ Poisson Electron Hole }

DGMOS

(sdegeo:create-rectangle (position 0 0 0) (position 0.035 0.015 0) "Silicon" "region_1")

(sdegeo:create-rectangle (position 0.035 0 0) (position 0.065 0.015 0) "Silicon" "region_2")

(sdegeo:create-rectangle (position 0.065 0 0) (position 0.1 0.015 0) "Silicon" "region_3")

(sdegeo:create-rectangle (position 0.035 0.015 0) (position 0.065 0.017 0) "SiO2" "region_4")

(sdegeo:create-rectangle (position 0.035 0.017 0) (position 0.065 0.019 0) "PolySilicon"


"region_5")

(sdegeo:create-rectangle (position 0.035 0 0) (position 0.065 -0.002 0) "SiO2" "region_6")

(sdegeo:create-rectangle (position 0.035 -0.002 0) (position 0.065 -0.004 0) "PolySilicon"


"region_7")
(sdegeo:define-contact-set "source" 4 (color:rgb 1 0 0 ) "##")

(sdegeo:define-contact-set "drain" 4 (color:rgb 1 1 0 ) "##")

(sdegeo:define-contact-set "gate" 4 (color:rgb 1 0 1 ) "##")

(sdegeo:set-current-contact-set "source")

(sdegeo:set-current-contact-set "drain")

(sdegeo:set-current-contact-set "gate")

(sdegeo:define-2d-contact (list (car (find-edge-id (position 0.0175 0.015 0)))) "source")

(sdegeo:define-2d-contact (list (car (find-edge-id (position 0.0825 0.015 0)))) "drain")

(sdegeo:define-2d-contact (list (car (find-edge-id (position 0.05 0.019 0)))) "gate")

(sdegeo:define-2d-contact (list (car (find-edge-id (position 0.05 -0.004 0)))) "gate")

(sdedr:define-refeval-window "RefEvalWin_1" "Rectangle" (position 0 0 0) (position 0.035 0.015


0))

(sdedr:define-refeval-window "RefEvalWin_2" "Rectangle" (position 0.035 0 0) (position 0.065


0.015 0))

(sdedr:define-refeval-window "RefEvalWin_3" "Rectangle" (position 0.065 0 0) (position 0.1


0.015 0))

(sdedr:define-constant-profile "ConstantProfileDefinition_1" "ArsenicActiveConcentration" 1e20)

(sdedr:define-constant-profile-placement "ConstantProfilePlacement_1"
"ConstantProfileDefinition_1" "RefEvalWin_1")

(sdedr:define-constant-profile "ConstantProfileDefinition_2" "BoronActiveConcentration" 1e+18)

(sdedr:define-constant-profile-placement "ConstantProfilePlacement_2"
"ConstantProfileDefinition_2" "RefEvalWin_2")

(sdedr:define-constant-profile "ConstantProfileDefinition_3" "ArsenicActiveConcentration" 1e+20)

(sdedr:define-constant-profile-placement "ConstantProfilePlacement_3"
"ConstantProfileDefinition_3" "RefEvalWin_3")

(sdedr:define-refinement-size "RefinementDefinition_1" 0.01 0.01 0.01 0.01 )


(sdedr:define-refinement-placement "RefinementPlacement_1" "RefinementDefinition_1" (list
"window" "RefEvalWin_1" ) )

(sdedr:define-refinement-size "RefinementDefinition_2" 0.01 0.01 0.01 0.01 )

(sdedr:define-refinement-placement "RefinementPlacement_2" "RefinementDefinition_2" (list


"window" "RefEvalWin_2" ) )

(sdedr:define-refinement-size "RefinementDefinition_3" 0.01 0.01 0.01 0.01 )

(sdedr:define-refinement-placement "RefinementPlacement_3" "RefinementDefinition_3" (list


"window" "RefEvalWin_3" ) )

(sde:save-model "/home/caduser/STDB/tmp/krishanu/krishanu_dgmos_msh")

(sde:set-meshing-command "snmesh")

(sde:build-mesh "" "/home/caduser/STDB/tmp/dgmos")

(system:command "svisual /home/caduser/STDB/tmp/dgmos_msh.tdr &")


File {
* Input Files

Grid="dgmos_msh.tdr"
Parameter="sdevice.par"
* Output Files
Current = "dgmos_des.plt"
Plot = "dgmos_des.tdr"
Output = "dgmos_des.log"
}
electrode{
{Name="source" voltage=0}
{Name="drain" voltage=0}
{Name="gate" voltage=-0.5 Workfunction=4.2}

*barrier=-0.55}
}
Physics
{
Fermi
EffectiveIntrinsicDensity(OldSlotboom)

Mobility(
DopingDependence
*HighFieldSaturation
Enormal
)
Recombination(
SRH(DopingDependence)
*eAvalanche(CarrierTempDrive)
*hAvalanche(Eparallel)
)

}
Plot{
eDensity hDensity
TotalCurrent/Vector eCurrent/Vector hCurrent/Vector
eMobility hMobility
eVelocity hVelocity
Potential SpaceCharge
Electrostaticpotential
ElectricField/Vector
Doping DonorConcentration AcceptorConcentration
SRH Auger
Band2Band
AvalancheGeneration eAvalancheGeneration hAvalancheGeneration
BandGap
EffectiveBandGap

BandGapNarrowing
Affinity
ConductionBand ValenceBand
}
Math {
RelErrControl
Digits=5
ErRef(electron)=1.e10
ErRef(hole)=1.e10
Notdamped=160
Iterations=1000
DirectCurrent
Method =ILS
-CheckUndefinedModels
}
Solve {
*-- Buildup of initial solution:
*NewCurrentFile=""
Coupled(Iterations=1000){ Poisson }
Coupled{ Poisson Electron Hole }
Quasistationary(
MinStep=1e-36 MaxStep=0.005
Goal{ Name="gate" Voltage=2}

Goal{ Name="drain" Voltage=1}


){ Coupled{ Poisson Electron Hole }
}
}
TFET
(sdegeo:create-rectangle (position 0 0 0) (position 0.13 0.02 0) "SiO2" "region_1")

(sdegeo:create-rectangle (position 0 0.02 0) (position 0.05 0.04 0) "Silicon" "region_2")

(sdegeo:create-rectangle (position 0.05 0.02 0) (position 0.1 0.04 0) "Silicon" "region_3")

(sdegeo:create-rectangle (position 0.1 0.02 0) (position 0.13 0.04 0) "Silicon" "region_4")

(sdegeo:create-rectangle (position 0.05 0.04 0) (position 0.1 0.042 0) "HfO2" "region_5")

(sdegeo:create-rectangle (position 0.05 0.042 0) (position 0.1 0.055 0) "TiN" "region_6")

(sde:save-model "/home/ec19a1/STDB/tmp/tfet/

(sde:save-model "/home/ec19a1/STDB/tmp/tfet/

(sdegeo:define-contact-set "source" 4 (color:rgb 1 0 0 ) "##")

(sdegeo:set-current-contact-

(sdegeo:define-contact-set "gate" 4 (color:rgb 1 1 0 ) "##")

(sdegeo:set-current-contact-

(sdegeo:define-contact-set "drain" 4 (color:rgb 1 1 1 ) "##")

(sdegeo:set-current-contact-
(sdegeo:set-contact (list (car (find-edge-id (position 0.025 0.04 0)))) "source")

(sdegeo:set-contact (list (car (find-edge-id (position 0.075 0.055 0)))) "gate")

(sdegeo:set-contact (list (car (find-edge-id (position 0.115 0.04 0)))) "drain")

(sdedr:define-refeval-window "RefEvalWin_1" "Rectangle" (position 0 0 0) (position 0.13 0.02 0))

(sdedr:define-refeval-window "RefEvalWin_2" "Rectangle" (position 0 0.02 0) (position 0.05 0.04


0))

(sdedr:define-refeval-window "RefEvalWin_3" "Rectangle" (position 0.05 0.02 0) (position 0.1


0.04 0))

(sdedr:define-refeval-window "RefEvalWin_4" "Rectangle" (position 0.1 0.02 0) (position 0.13


0.04 0))

(sdedr:define-constant-profile "ConstantProfileDefinition_1" "BoronActiveConcentration" 1e+20)

(sdedr:define-constant-

(sdedr:define-constant-profile "ConstantProfileDefinition_2" "

(sdedr:define-constant-

(sdedr:define-constant-profile "ConstantProfileDefinition_3" "

(sdedr:define-constant-

(sdedr:define-refinement-size "RefinementDefinition_1" 0.02 0.02 0.01 0.01 )

(sdedr:define-refinement-

(sdedr:define-refinement-size "RefinementDefinition_2" 0.02 0.02 0.01 0.01 )

(sdedr:define-refinement-

(sdedr:define-refinement-size "RefinementDefinition_3" 0.02 0.02 0.01 0.01 )

(sdedr:define-refinement-

(sdedr:define-refinement-size "RefinementDefinition_4" 0.02 0.02 0.01 0.01 )

(sdedr:define-refinement-

(sdedr:define-refinement-size "RefinementDefinition_4" 0.02 0.02 0.01 0.01 )

(sdedr:define-refinement-

(sde:save-model "/home/ec19a1/STDB/tmp/tfet/
(sde:set-meshing-command "snmesh")

(system:command "svisual /home/ec19a1/STDB/tmp/tfet/

**********************

File {
* Input Files
Grid="tfet_msh.tdr"
Parameter="sdevice.par"

* Output Files
Current = "tfet"
Plot = "tfet"
Output = "tfet"
}

electrode{
{Name="source" voltage=0}
{Name="drain" voltage=1}
{Name="gate" voltage=-1}
*barrier=-0.55}
}
Physics
{
Fermi
EffectiveIntrinsicDensity(
Mobility(
DopingDependence
*HighFieldSaturation
Enormal
)
Recombination(
SRH(DopingDependence)
*eAvalanche(CarrierTempDrive)
*hAvalanche(Eparallel)
)
}
Plot{
eDensity hDensity
TotalCurrent/Vector eCurrent/Vector hCurrent/Vector

eMobility hMobility
eVelocity hVelocity
Potential SpaceCharge
Electrostaticpotential
ElectricField/Vector
Doping DonorConcentration AcceptorConcentration
SRH Auger
Band2Band
AvalancheGeneration eAvalancheGeneration hAvalancheGeneration
BandGap
EffectiveBandGap
BandGapNarrowing
Affinity
ConductionBand ValenceBand
}
Math {
RelErrControl
Digits=5
ErRef(electron)=1.e10
ErRef(hole)=1.e10
Notdamped=160
Iterations=1000
DirectCurrent
Method =ILS
-CheckUndefinedModels
}

Solve {
*-- Buildup of initial solution:
*NewCurrentFile=""
Coupled(Iterations=1000){ Poisson }
Coupled{ Poisson Electron Hole }
Quasistationary(
MinStep=1e-36 MaxStep=0.005
Goal{ Name="gate" Voltage=1.5}
Goal{ Name="drain" Voltage=1}
){ Coupled{ Poisson Electron Hole }
}
}

SOI MOSFET
(sdegeo:create-rectangle (position 0 0 0) (position 0.035 0.015 0) "Silicon" "region_2")

(sdegeo:create-rectangle (position 0.035 0 0) (position 0.065 0.015 0) "Silicon" "region_3")

(sdegeo:create-rectangle (position 0.065 0 0) (position 0.1 0.015 0) "Silicon" "region_4")

(sdegeo:create-rectangle (position 0 0.015 0) (position 0.1 0.03 0) "SiO2" "region_5")

(sdegeo:create-rectangle (position 0 0.03 0) (position 0.1 0.04 0) "Silicon" "region_6")

(sdegeo:create-rectangle (position 0.035 0 0) (position 0.065 -0.002 0) "SiO2" "region_7")

(sdegeo:create-rectangle (position 0.035 -0.002 0) (position 0.065 -0.004 0) "PolySilicon"


"region_8")

(sdegeo:define-contact-set "s" 4 (color:rgb 1 0 0 ) "##")

(sdegeo:define-contact-set "g" 4 (color:rgb 1 0 1 ) "##")

(sdegeo:define-contact-set "d" 4 (color:rgb 1 1 0 ) "##")


(sdegeo:set-current-contact-set "s")

(sdegeo:set-current-contact-set "g")

(sdegeo:set-current-contact-set "d")

(sdegeo:define-2d-contact (list (car (find-edge-id (position 0.0175 0 0)))) "s")

(sdegeo:define-2d-contact (list (car (find-edge-id (position 0.05 -0.004 0)))) "g")

(sdegeo:define-2d-contact (list (car (find-edge-id (position 0.0825 0 0)))) "d")

(sdedr:define-refeval-window "RefEvalWin_1" "Rectangle" (position 0 0 0) (position 0.035 0.015


0))

(sdedr:define-refeval-window "RefEvalWin_2" "Rectangle" (position 0.035 0 0) (position 0.065


0.015 0))

(sdedr:define-refeval-window "RefEvalWin_3" "Rectangle" (position 0.065 0 0) (position 0.1


0.015 0))

(sdedr:define-refeval-window "RefEvalWin_4" "Rectangle" (position 0 0.015 0) (position 0.1 0.03


0))

(sdedr:define-refeval-window "RefEvalWin_5" "Rectangle" (position 0 0.03 0) (position 0.1 0.04


0))

(sdedr:define-constant-profile "ConstantProfileDefinition_1" "AntimonyActiveConcentration"


1e+20)

(sdedr:define-constant-profile-placement "ConstantProfilePlacement_1"
"ConstantProfileDefinition_1" "RefEvalWin_1")

(sdedr:define-constant-profile "ConstantProfileDefinition_2" "BoronActiveConcentration" 1e+18)

(sdedr:define-constant-profile-placement "ConstantProfilePlacement_2"
"ConstantProfileDefinition_2" "RefEvalWin_2")

(sdedr:define-constant-profile "ConstantProfileDefinition_3" "ArsenicActiveConcentration" 1e+20)

(sdedr:define-constant-profile-placement "ConstantProfilePlacement_3"
"ConstantProfileDefinition_3" "RefEvalWin_3")

(sdedr:define-constant-profile "ConstantProfileDefinition_5" "BoronActiveConcentration" 1e+17)

(sdedr:define-constant-profile-placement "ConstantProfilePlacement_5"
"ConstantProfileDefinition_5" "RefEvalWin_5")

(sdedr:define-refinement-size "RefinementDefinition_1" 0.01 0.01 0.01 0.01 )


(sdedr:define-refinement-placement "RefinementPlacement_1" "RefinementDefinition_1" (list
"window" "RefEvalWin_1" ) )

(sdedr:define-refinement-size "RefinementDefinition_2" 0.01 0.01 0.01 0.01 )

(sdedr:define-refinement-placement "RefinementPlacement_2" "RefinementDefinition_2" (list


"window" "RefEvalWin_2" ) )

(sdedr:define-refinement-size "RefinementDefinition_3" 0.01 0.01 0.01 0.01 )

(sdedr:define-refinement-placement "RefinementPlacement_3" "RefinementDefinition_3" (list


"window" "RefEvalWin_3" ) )

(sdedr:define-refinement-size "RefinementDefinition_4" 0.01 0.01 0.01 0.01 )

(sdedr:define-refinement-placement "RefinementPlacement_4" "RefinementDefinition_4" (list


"window" "RefEvalWin_4" ) )

(sdedr:define-refinement-size "RefinementDefinition_5" 0.01 0.01 0.01 0.01 )

(sdedr:define-refinement-placement "RefinementPlacement_5" "RefinementDefinition_5" (list


"window" "RefEvalWin_5" ) )

(sde:save-model "/home/caduser/STDB/tmp/krishanu/soi")

(sde:set-meshing-command "snmesh")

(sde:build-mesh "" "/home/caduser/STDB/tmp/krishanu/soi")

(system:command "svisual /home/caduser/STDB/tmp/krishanu/soi_msh.tdr &")

File {

* Input Files

Grid="soi_msh.tdr"

Parameter="sdevice.par"

* Output Files

Current = "soi1"

Plot = "soi1"

Output = "soi1"
}

electrode{

{Name="s" voltage=0}

{Name="d" voltage=1}

{Name="g" voltage=-1 Workfunction=4.2}

*barrier=-0.55}

Physics

Fermi

EffectiveIntrinsicDensity(OldSlotboom)

Mobility(

DopingDependence

*HighFieldSaturation

Enormal

Recombination(

SRH(DopingDependence)

*eAvalanche(CarrierTempDrive)

*hAvalanche(Eparallel)

Plot{
eDensity hDensity

TotalCurrent/Vector eCurrent/Vector hCurrent/Vector

eMobility hMobility

eVelocity hVelocity

Potential SpaceCharge

Electrostaticpotential

ElectricField/Vector

Doping DonorConcentration AcceptorConcentration

SRH Auger

Band2Band

AvalancheGeneration eAvalancheGeneration hAvalancheGeneration

BandGap

EffectiveBandGap

BandGapNarrowing

Affinity

ConductionBand ValenceBand
}

Math {

RelErrControl

Digits=5

ErRef(electron)=1.e10

ErRef(hole)=1.e10

Notdamped=160

Iterations=1000

DirectCurrent

Method =ILS
-CheckUndefinedModels

Solve {

*-- Buildup of initial solution:

*NewCurrentFile=""

Coupled(Iterations=1000){ Poisson }

Coupled{ Poisson Electron Hole }

Quasistationary(

MinStep=1e-36 MaxStep=0.005

Goal{ Name="g" Voltage=1.5}

Goal{ Name="d" Voltage=1}

){ Coupled{ Poisson Electron Hole }

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