*MOSIS file tsmc-035/t27k_lo_epi-params.

txt

* MOSIS PARAMETRIC TEST RESULTS

*
* RUN: T27K (LO_EPI) VENDOR: TSMC
* TECHNOLOGY: SCN035 FEATURE SIZE: 0.35 microns
*
*
*INTRODUCTION: This report contains the lot average results obtained by MOSIS
* from measurements of MOSIS test structures on each wafer of
* this fabrication lot. SPICE parameters obtained from similar
* measurements on a selected wafer are also attached.*
*
*COMMENTS: TSMC 035

*TRANSISTOR PARAMETERS W/L N-CHANNEL P-CHANNEL UNITS

* MINIMUM 0.6/0.4
* Vth 0.57 -0.81 volts

* SHORT 20.0/0.4
* Idss 466 -207 uA/um
* Vth 0.60 -0.80 volts
* Vpt 9.3 -9.7 volts

* WIDE 20.0/0.4
* Ids0 < 2.5 < 2.5 pA/um

* LARGE 50/50
* Vth 0.56 -0.77 volts
* Vjbkd 8.3 -8.5 volts
* Ijlk <50.0 <50.0 pA
* Gamma 0.64 0.37 V^0.5

* K' (Uo*Cox/2) 94.3 -32.7 uA/V^2

* Low-field Mobility 426.02 147.73 cm^2/V*s

*COMMENTS: Poly bias varies with design technology. To account for mask and
* etch bias use the appropriate value for the parameter XL in your
* SPICE model card.
* Design Technology XL
* ----------------- -------
* SCN4M_SUBM (lambda=0.20) -0.02
* thick oxide -0.06
* TSMC35 0.03
* thick oxide 0.04
* SCN4M (lambda=0.25) -0.12
* thick oxide -0.06
*
*
*FOX TRANSISTORS GATE N+ACTIVE P+ACTIVE UNITS
* Vth Poly >10.0 <-10.0 volts
*
*

*PROCESS PARAMETERS N+ACTV P+ACTV POLY POLY2 MTL1 MTL2 MTL3 UNITS
* Sheet Resistance 3.3 2.6 5.7 0.07 0.07 0.07 ohms/sq
* Contact Resistance 3.5 2.9 4.2 1.08 1.13 ohms
* Gate Oxide Thickness 78 angstrom

*
*PROCESS PARAMETERS MTL4 N\PLY N_WELL UNITS
* Sheet Resistance 0.04 1030 1005 ohms/sq
* Contact Resistance 1.18 ohms

*COMMENTS: N\POLY is N-well under polysilicon.

*CAPACITANCE PARAMETERS N+ACTV P+ACTV POLY M1 M2 M3 M4 N_WELL UNITS

* Area (substrate) 1010 1434 112 31 18 7 -- 56 aF/um^2
* Area (N+active) 4543 41 18 13 10 aF/um^2
* Area (P+active) 4526 aF/um^2
* Area (poly) 64 17 10 7 aF/um^2
* Area (metal1) 39 15 9 aF/um^2
* Area (metal2) 40 14 aF/um^2
* Area (metal3) 36 aF/um^2
* Fringe (substrate) 349 418 47 34 53 14 aF/um
* Fringe (poly) 70 39 30 25 aF/um
* Fringe (metal1) 60 37 29 aF/um
* Fringe (metal2) 54 38 aF/um
* Fringe (metal3) 60 aF/um
* Overlap (N+active) 266 aF/um
* Overlap (P+active) 299 aF/um

*CIRCUIT PARAMETERS UNITS

* Inverters K
* Vinv 1.0 1.22 volts
* Vinv 1.5 1.34 volts
* Vol (100 uA) 2.0 0.26 volts
* Voh (100 uA) 2.0 2.81 volts
* Vinv 2.0 1.44 volts
* Gain 2.0 -20.22
* Ring Oscillator Freq.
* DIV256 (31-stg,3.3V) 163.36 MHz
* D256_THK (31-stg,5.0V) 104.52 MHz
* Ring Oscillator Power
* DIV256 (31-stg,3.3V) 0.16 uW/MHz/gate
* D256_THK (31-stg,5.0V) 0.30 uW/MHz/gate

*COMMENTS: SUBMICRON

*
 T27K SPICE BSIM3 VERSION 3.1 PARAMETERS

*SPICE 3f5 Level 8, Star-HSPICE Level 49, UTMOST Level 8

* DATE: Sep 18/02

* LOT: T27K WAF: 9001
* Temperature_parameters=Default
.MODEL NMOS NMOS ( LEVEL = 49
+VERSION = 3.1 TNOM = 27 TOX = 7.8E-9
+XJ = 1E-7 NCH = 2.2E17 VTH0 = 0.540486
+K1 = 0.5516489 K2 = 0.0238324 K3 = 4.0027E-3
+K3B = -9.7277466 W0 = 1.840877E-5 NLX = 2.016814E-7
+DVT0W = 0 DVT1W = 0 DVT2W = 0
+DVT0 = 4.5564366 DVT1 = 0.9630947 DVT2 = -0.1923249
+U0 = 433.3697729 UA = -3.92535E-12 UB = 1.547027E-18
+UC = 3.617125E-11 VSAT = 1.832515E5 A0 = 1.142713
+AGS = 0.1549776 B0 = 1.091029E-6 B1 = 5E-6
+KETA = 5.349809E-3 A1 = 0 A2 = 0.3815018
+RDSW = 934.2877955 PRWG = -0.0191681 PRWB = -0.1323085
+WR = 1 WINT = 6.714226E-8 LINT = 0
+XL = -2E-8 XW = 0 DWG = -5.854052E-9
+DWB = 3.137813E-9 VOFF = -0.0934621 NFACTOR = 1.3252139
+CIT = 0 CDSC = 2.4E-4 CDSCD = 0
+CDSCB = 0 ETA0 = 0.9438858 ETAB = -0.0275447
+DSUB = 0.7902402 PCLM = 1.478351 PDIBLC1 = 3.502935E-4
+PDIBLC2 = 4.702685E-3 PDIBLCB = -1E-3 DROUT = 0.0535434
+PSCBE1 = 5.434746E8 PSCBE2 = 3.7809E-5 PVAG = 9.703238E-3
+DELTA = 0.01 RSH = 3.3 MOBMOD = 1
+PRT = 0 UTE = -1.5 KT1 = -0.11
+KT1L = 0 KT2 = 0.022 UA1 = 4.31E-9
+UB1 = -7.61E-18 UC1 = -5.6E-11 AT = 3.3E4
+WL = 0 WLN = 1 WW = 0
+WWN = 1 WWL = 0 LL = 0
+LLN = 1 LW = 0 LWN = 1
+LWL = 0 CAPMOD = 2 XPART = 0.5
+CGDO = 2.66E-10 CGSO = 2.66E-10 CGBO = 1E-12
+CJ = 1.003264E-3 PB = 0.7335577 MJ = 0.3159433
+CJSW = 3.601271E-10 PBSW = 0.6478789 MJSW = 0.1175036
+CJSWG = 1.82E-10 PBSWG = 0.6478789 MJSWG = 0.1175036
+CF = 0 PVTH0 = -0.0237359 PRDSW = -118.0811334
+PK2 = 2.139682E-3 WKETA = -4.981161E-3 LKETA = 6.343167E-4 )
*
.MODEL PMOS PMOS ( LEVEL = 49
+VERSION = 3.1 TNOM = 27 TOX = 7.8E-9
+XJ = 1E-7 NCH = 8.52E16 VTH0 = -0.756216
+K1 = 0.4311779 K2 = -0.0115536 K3 = 54.4562842
+K3B = -5 W0 = 6.577617E-6 NLX = 2.160161E-7
+DVT0W = 0 DVT1W = 0 DVT2W = 0
+DVT0 = 1.072919 DVT1 = 0.5759336 DVT2 = -0.0434365
+U0 = 157.3607079 UA = 1.033456E-10 UB = 2.067525E-18
+UC = -2.19024E-11 VSAT = 1.58892E5 A0 = 0.9227803
+AGS = 0.3618803 B0 = 2.895996E-6 B1 = 5E-6
+KETA = -6.133969E-3 A1 = 1.311699E-4 A2 = 0.799505
+RDSW = 4E3 PRWG = -0.1510998 PRWB = 0.0488607
+WR = 1 WINT = 6.708611E-8 LINT = 0
+XL = -2E-8 XW = 0 DWG = -1.853554E-8
+DWB = 1.078164E-8 VOFF = -0.1255689 NFACTOR = 1.9008141
+CIT = 0 CDSC = 2.4E-4 CDSCD = 0
+CDSCB = 0 ETA0 = 8.542933E-4 ETAB = 0.1410237
+DSUB = 3.693337E-3 PCLM = 4.5683118 PDIBLC1 = 0.1391832
+PDIBLC2 = 4.052383E-4 PDIBLCB = 0.1 DROUT = 0.4219987
+PSCBE1 = 7.936523E10 PSCBE2 = 5E-10 PVAG = 7.0742082
+DELTA = 0.01 RSH = 2.6 MOBMOD = 1
+PRT = 0 UTE = -1.5 KT1 = -0.11
+KT1L = 0 KT2 = 0.022 UA1 = 4.31E-9
+UB1 = -7.61E-18 UC1 = -5.6E-11 AT = 3.3E4
+WL = 0 WLN = 1 WW = 0
+WWN = 1 WWL = 0 LL = 0
+LLN = 1 LW = 0 LWN = 1
+LWL = 0 CAPMOD = 2 XPART = 0.5
+CGDO = 2.99E-10 CGSO = 2.99E-10 CGBO = 1E-12
+CJ = 1.437988E-3 PB = 0.99 MJ = 0.5533161
+CJSW = 4.091637E-10 PBSW = 0.4121793 MJSW = 0.2027948
+CJSWG = 4.42E-11 PBSWG = 0.4121793 MJSWG = 0.2027948
+CF = 0 PVTH0 = 7.063761E-3 PRDSW = -81.4334699
+PK2 = 1.522781E-3 WKETA = 2.442193E-3 LKETA = -4.316214E-3 )
*