Xavier Institute of Engineering
Mahim Causeway, Mahim, Mumbai – 400 016
Vision: “To nurture the joy of excellence in a world of high
technology”
Mission: “To strive to match global standards in Technical Education
by Interaction with Industry, Continuous Staff training and
Development of quality of life”
First Year Engineering
Semester II
Subject Code: BSL 2012
Subject Name – Applied Physics
Applied Physics Laboratory
Laboratory Experiment: 02
Experiment Name: Examining I-V characteristics of pn junction
diodes
Learning Objectives: After successfully completing this experiment in
the Engineering physics laboratory the students
will
Understand working of pn junction diode
Plot I-V characteristics, find knee voltage, static
resistance
Lab Outcome (LO No.):- 02
Program Outcomes 1, 8, 9, 10
(POs) Achieved:-
References:
1. Avadhanulu & Kshirssagar A textbook of Engineering Physics, S. Chand
2. V Rajendran Engineering Physics, McGraw Hill
Format of the experiment report to be written
Blank side Ruled side (everything written by pen)
1. Circuit diagram 1. Title of experiment (above margin)
2. Observation table (written by pen) 2. Aim of the experiment
3. Graph plotting 3. Apparatus of the experiment
4. Calculations (written by pen) 4. Relevant formulae
5. Theory
6. Procedure of the experiment
7. Result
8. Sources of error
STUDY of I-V CHARACTERISTICS OF SEMICONDUCTOR DIODE
AIM:
To perform the forward bias characteristics of given P-N Junction Diodes.
APPARATUS:
P-N Junction Diodes, breadboard, Digital multimeters (at least 2 nos.), resistor, wires.
THEORY:
Extrinsic semiconductors are limited in standalone applications but become highly
functional when p-type and n-type semiconductors form a pn-junction diode. This
diode allows current flow in one direction while opposing it in the reverse direction, a
property called rectifying action. This principle is fundamental in rectifiers, which
convert AC to DC. Nearly all semiconductor devices incorporate at least one pn-
junction, enabling varied applications like variable capacitors (varicaps), oscillators
(tunnel and Gunn diodes), voltage stabilizers (zener diodes), light detectors
(photodiodes), voltage sources (solar cells), and light sources (LEDs and lasers). A
thorough understanding of pn-junctions is crucial for solid-state devices.
The electrical behavior of a diode in a circuit is represented by its V-I characteristics—
a graph of the voltage applied across the diode
versus the resulting current. To plot this, a
forward-biased diode is connected in a
laboratory setup with a DC source,
potentiometer, and resistor. The resistor limits
excessive current to prevent damage, while
the potentiometer varies the applied voltage.
Current is measured with a milliammeter, and
voltage with a voltmeter. The diode’s anode
and cathode correspond to the p- and n-
regions, respectively.
In forward bias, the diode conducts poorly
until the applied voltage exceeds the barrier
Fig. 1
potential, or cut-in voltage (0.7V for silicon,
0.3V for germanium). Beyond this, even small increases in voltage cause rapid current
rise. Exceeding the maximum current rating (e.g., 1A for BY126) risks diode damage.
In reverse bias, the current is minimal (microamps for germanium, nanoamps for
silicon) until breakdown, where it increases sharply with small voltage changes.
CIRCUIT DIAGRAM:
1K or 10 K
Fig. 2
PROCEDURE:
Forward I-V Characteristics of P-N junction Diode.
1) Construct the following circuit for the given junction diodes.
2) Refer to the theory & plot the V-I Characteristics of the given diodes.
3) Calculate static resistance for both diodes from graph at I = ….. mA.
4) Comment on the result.
OBSERVATION TABLE:
For Diode 1
Supply Voltage Voltage Drop across Diode, Current through Diode
𝑽𝑺 (volts) 𝑽𝒇 (…..) 𝑰𝒇 (….)
0
0.3
0.6
0.9
1.2
1.5
2
2.5
3
3.5
4
5
For Diode 2
Supply Voltage Voltage Drop across Diode, Current through Diode
𝑽𝑺 (volts) 𝑽𝒇 (…..) 𝑰𝒇 (…..)
0
0.2
0.4
0.6
0.8
1
1.2
1.5
2
2.5
3
3.5
4
4.5
5
CALCULATIONS:
1. Static resistance for diode 1 = V/I = (unit)
2. Static resistance for diode 2 = V/I = (unit)
RESULT:
1. Cut-in voltage of Diode 1 = ………. (unit)
2. Diode 1 is ……………
3. Cut-in voltage of Diode 2 = ………. (unit)
4. Diode 2 is …………..
5. Static resistance of diode 1 is …… diode 2.
SOURCES OF ERRORS:
