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Tutorial 3

The document contains a series of tutorial questions related to semiconductor physics, focusing on doping effects, electron orbits, Fermi level positions, intrinsic carrier concentrations, and conductivity calculations. It includes specific calculations for a Ge sample doped with As, a p-type semiconductor's Fermi level, and the properties of intrinsic Ge and Si at 300K. Additionally, it addresses the Hall effect in N-type Si, requiring calculations of electric field, electric force, and drift velocity of electrons.

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virajbhosale781
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3 views1 page

Tutorial 3

The document contains a series of tutorial questions related to semiconductor physics, focusing on doping effects, electron orbits, Fermi level positions, intrinsic carrier concentrations, and conductivity calculations. It includes specific calculations for a Ge sample doped with As, a p-type semiconductor's Fermi level, and the properties of intrinsic Ge and Si at 300K. Additionally, it addresses the Hall effect in N-type Si, requiring calculations of electric field, electric force, and drift velocity of electrons.

Uploaded by

virajbhosale781
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
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Download as PDF, TXT or read online on Scribd
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Tutorial-3

Q1. A Ge sample is doped with 1014/cm3 As atoms/cm3. What will be the equilibrium hole
concentration? What is the relative position of Fermi level w.r.t intrinsic energy level? [Given: ni =
2.5x1013/cm3]

Q2. Calculate the radius of the electron orbit around the donor in figure below, assuming a ground
state hydrogen‐like orbit in Si. Compare with the Si lattice constant. Use mn* = 0.26 m0 for Si.

Q3. A p‐type semiconductor at 300K has conductivity 100 (Ω‐cm)‐1. The position of the Fermi level
with respect to edge of the conduction band is ____ (in eV). Assume electron state density of
valence band NV = 6 × 1019 cm‐3, μP = 1800 cm2/v‐s and band gap EG = 0.72 eV (Here the position is
represented in eV units i.e. positive if EF above EC it is positive and negative if EC above EF)

Q4. A semiconductor with intrinsic carrier concentration 1 × 1010 cm‐3 at 300°K has both valence and
conduction band effective densities of states NC and NV equal to 1018 cm‐3. Find the value of the
bandgap Eg. Take VT = 25.9 mV

Q5.

(i) The following data are given for an intrinsic Ge at 300K. Calculate the conductivity and resistivity
of the sample? (ni= 2.4 x1019m‐3, μe = 0.39 m2‐V‐1S‐1, μp = 0.19 m2‐V‐1S‐1)

(ii) Find the diffusion co‐efficient of electron in Si at 300 K if μe = 0.19 m2‐V‐1S‐1.

Q6. A strip of N‐type Si experiences a Hall Voltage of 1.7uV at the spacing of 1cm due to a uniform
magnetic field of 2T. Find:

(i) Electric field due to hall effect


(ii) Electric force due to hall effect on electrons
(iii) Drift velocity of electrons

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