Laboratory work #8

Task 1. Research of DC circuits with nonlinear elements

The objective of the work is obtaining the skills of experimental research of

direct current circuits with nonlinear elements.

1.1 Preparation for a laboratory work

Repeat the “Nonlinear electric DC circuit” section of discipline.

Answer the questions in writing and do the following assignments:

1) What nonlinear elements are called symmetric and which ones are
asymmetric? Draw their current-voltage characteristics.
2) What is the difference between the static and differential resistances of a
nonlinear element?
3) Draw a circuit for data getting for the current-voltage characteristic of a non-
linear element when the circuit is fed by the smoothly adjustable DC voltage source.
Provide in the circuit diagram necessary measuring instruments.
4) Give an example of a graphical calculation of a circuit with a single volt- age
source (EMF) and nonlinear resistances connected in series.
5) Give an example of a graphical calculation of a circuit with nonlinear
resistances connected in parallel.
6) Give an example of a graphical calculation of a circuit with combined con-
nection of nonlinear elements (series and parallel connection).
7) Give an example of a graphical calculation of a branched circuit with non-
linear elements using the pair of nodes method.

1.2 Procedure of carrying out the work

1.2.1 Assemble an electric circuit for getting the readings to construct the cur-
rent-voltage characteristic of nonlinear element and write down these data to the ta- ble
1.1. Do these actions for three nonlinear elements.
Table 1.1
U, V 0 ±5 ±10 ±15 ±20
I, mA

1.2.2 Assemble an electric circuit with a single voltage source (EMF) and two nonlinear
resistances connected in series. In the circuit should be provided the pos- sibility of
plug in the instruments to measure the current and the voltages across each elements
and power source. Set the EMF of source E = 15…20V and write down the
measurement results.
1.2.3 Assemble an electric circuit with a single voltage source (EMF) and two nonlinear
resistances connected in parallel. In the circuit should be provided the possibility of
plug in the instruments to measure the current and the voltages across each elements
and source. Set the EMF of source E = 15…20V and write down the measurement
results.
 1.2.4 Assemble an electric circuit with a single voltage source (EMF) and
combined connection of nonlinear resistances as shown in figure 1.1. In the circuit
should be provided the possibility of plug in the instruments to measure all currents
and voltages across each element and source. Set the EMF of source E = 15…20V and
write down the measurement results.
1.2.5 Assemble a branched electric circuit with nonlinear resistances, pair of
nodes and two voltage sources as shown in figure 1.2. In the circuit should be pro-
vided the possibility of plug in the instruments to measure all currents and voltages
across each element and voltage between two nodes. Set the EMF of sources: E1 = 20V
and E2 = 10…15V. Write down the measurement results.
2 Figure 1.1 – Circuit with combined connection of nonlinear resistances

Figure 1.2 – Branched circuit with nonlinear resistances and pair of nodes

2.1 Processing the results of experiments

2.1.1 Construct the current-voltage characteristics of three nonlinear elements.

2.1.2 Make the graphical calculation of the scheme in point 1.2.2 and compare
the calculated values with the experimental data.
2.1.3 Make the graphical calculation of the scheme in point 1.2.3 and com-
pare the calculated values with the experimental data.
2.1.4 Make the graphical calculation of the scheme in point 1.2.4 and com-
pare the calculated values with the experimental data.
2.1.5 Make the graphical calculation of the scheme in point 1.2.5 and com-
pare the calculated values with the experimental data.
2.1.6 Make the conclusions by the work done.

Task 2. Diode characteristics

Purpose: The purpose of this laboratory investigation is to determine the voltage

and current characteristics of several P-N junction diodes including the 1N4148 signal
diode, the 1N4004 rectifier diode and the 1N5231B zener diode. Diode signal
processing applications are also introduced including signal clipping and rectification.
Limitations of switching frequency are also investigated.

Upon completion of this lab you should be able to:

  Measure and plot the V-I terminal characteristics of P-N junction diodes.
 Configure an oscilloscope in X-Y mode to display the V-I characteristics of a
diode (curve tracer).
 Determine exponential diode model parameters IS and n from voltage and
current data.
 Compare diode models including the constant-voltage-drop model, the piece-
wise-linear model and the exponential model.
 Use an oscilloscope to display the voltage transfer characteristic of a diode
signal processing circuit.
 Understand diode switching frequency limitations.

Part 1: diode v-i characteristics

Forward Bias Region

1.1. Build the circuit shown in Fig. 1-1 using the 1N4148 diode and a 1kΩ resistor.
Vary V1 from 0 to 10V in appropriate intervals to obtain enough data points to
plot the Forward Bias V-I Characteristic of the diode.

1.2. Measure and record the voltages across the diode (V D) and resistor (VR), and
calculate the current (ID) for each data point. Create a table in your lab notebook
of this data, as shown.

V1 VR VD ID
(Measured) (Measured) (Measured) (Calculated)

• • • •
• • • •
• • • •

NOTES:
 Take more data points at diode voltages between 0.4V and 0.7V volts for
greater accuracy.
 Measure the actual resistance used. The resistors in your kit have a tolerance
of ±5%, so using the nominal value of 1kΩ for R1 would give an uncertainty
in ID of ±5%.
 When making measurements, use the appropriate scale on the DVM to
display as many significant figures as possible for greater accuracy.
 For these measurements, the meter current can be assumed to be negligible if
the input impedance of the meter is at least 10MΩ. Check this and make a
 note of it.

Reverse Bias Region

1.3. In order to measure the Reverse Bias V-I Characteristic of the diode, swap the
direction or polarity of the diode and replace R1 with a 1MΩ resistor as shown in
Fig. 1-2. Sweep the power supply from 0 to 20V in increments of 2V. Record the
voltage drops across D1 and R1, and calculate the current (ID) for each data
point. Use these measurements to plot the Reverse Bias V-I Characteristic of the
diode. NOTE: VD and ID values should be indicated as negative values for
reverse bias.

Part 2: diode v-i characteristics (sweep method)

The sweep method can be used to easily display the V-I characteristic of a diode using
an oscilloscope. Specialized instruments of this type are known as Curve Tracers. If a
curve tracer is available, you most certainly can use one for this part of the experiment.

2.1 Set up the circuit in Figure 1-3 using the 12 V transformer that you will be given
in the lab. The transformer needs to be plugged into on your bench and turned on.
A light on the switch should indicate that power is on.

NOTE: The only ground reference point in the circuit is the scope probe ground.
DO NOT connect any of the transformer leads to ground in this circuit.

2.2 Next, press the “DISPLAY” key on the Oscilloscope and then select “XY
Format” on the screen menu. Set Ch-1 to 200 mV/div and Ch-2 to 2 V/div so you
will obtain an appropriate characteristic curve of the 1N4004 diode. Press the Ch-
 2 menu button, then press the screen “Invert” menu button to “ON”. Turn on the
transformer switch. The waveform should sweep both the forward and reverse
characteristic of the diode. The upper right quadrant should be the forward
characteristic and the lower left, the reverse. Record this waveform then turn off
the transformer switch.

2.3 In the circuit of Figure 1-3, remove the 1N4004 diode and replace it with the
1N5231B, Zener diode. Connect the cathode to point “A” and the anode to point
“B”. Turn on the transformer switch and repeat the above steps in Part 2.2 above,
making oscilloscope adjustments if necessary to obtain an appropriate Zener
characteristic curve. Record this waveform, then turn off the transformer switch.

2.4 How are the V-I characteristics for the 1N4004 and 1N5231B similar? How do
they differ? Can you explain why?

Additional details for each part of this lab are given below:

W1. Graph the overall V-I characteristic for the 1N4148 diode based on your data,
on linear axes with each region of the curve identified, using different voltage
scales for the forward and reverse bias regions.

W2. Derive the exponential model parameters Is and n for your diode based on two
or more of your data points and Shockley’s Diode Equation, presented in class.

W3. Graph Shockley’s diode equation alongside your data using the parameters
derived in part W4. Use a semi-log scale, log(ID) vs. VD, and plot the forward
bias region only. NOTE: Exponential graphs should come out linear on a semi-
log scale.

W4. Compare the three diode models including, the constant voltage drop model, the
piece- wise linear model, and the exponential model and answer the following
questions.

(1) Based on your data, what voltage would you use for a constant voltage drop
model at a diode current of 5mA?

(2) For a piece-wise linear model, what values would you use for V D0 and rD,
at a current of 5mA?

(3) How well do these models predict the diode’s V-I behavior?

(4) Are there any deviations from the model (e.g. at low currents or high
currents)? What are the trade-offs involved with each model? Accuracy?
Ease of use? Etc.

W5. Include graphs from both lab and simulation.

W6. Compare the V-I characteristics for the 1N4004 and 1N5231B. How are they
similar? How do they differ? Explain.