2N6790

Data Sheet December 2001

3.5A, 200V, 0.800 Ohm, N-Channel Power Features

MOSFET • 3.5A, 200V
The 2N6790 is an N-Channel enhancement mode silicon
• rDS(ON) = 0.800Ω
gate power MOS field effect transistor designed for
applications such as switching regulators, switching • SOA is Power Dissipation Limited
converters, motor drivers, relay drivers, and drivers for high • Nanosecond Switching Speeds
power bipolar switching transistors requiring high speed and
low gate drive power. This device can be operated directly • Linear Transfer Characteristics
from an integrated circuit. • High Input Impedance
• Majority Carrier Device
Ordering Information
• Related Literature
PART NUMBER PACKAGE BRAND
- TB334 “Guidelines for Soldering Surface Mount
2N6790 TO-205AF 2N6790 Components to PC Boards”
NOTE: When ordering, include the entire part number.
Symbol
D

Packaging
JEDEC TO-205AF

DRAIN
(CASE) SOURCE

GATE

©2001 Fairchild Semiconductor Corporation 2N6790 Rev. B

 2N6790

Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified

2N6790 UNITS
Drain to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDS 200 V
Drain to Gate Voltage (RGS = 20kΩ) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VDGR 200 V
Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID 3.5 A
TC = 100oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID 2.25 A
Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM 14 A
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS ±20 V
Continuous Source Current (Body Diode) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IS 3.5 A
Pulse Source Current (Body Diode) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ISM 14 A
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD 20 W
Above TC = 25oC, Derate Linearly . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.16 W/oC
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG -55 to 150 oC
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL 300 oC
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .Tpkg 260 oC
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

NOTE:
1. TJ = 25oC to 125oC.

Electrical Specifications TC = 25oC, Unless Otherwise Specified

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
Drain to Source Breakdown Voltage BVDSS ID = 0.25mA, VGS = 0V 200 - - V
Gate to Threshold Voltage VGS(TH) VGS = VDS, ID = 1.0mA 2 - 4 V
Zero-Gate Voltage Drain Current IDSS VDS = 200V, VGS = 0V - - 250 µA
VDS = 160V, VGS = 0V TC = 125oC - - 1000 µA
Gate to Source Leakage Current IGSS VGS = ±20V, VDS = 0 - - 100 nA
Drain to Source On-Voltage (Note 2) VDS(ON) ID = 3.5A, VGS = 10V - - 2.8 V
Drain to Source On Resistance rDS(ON) ID = 2.25A, VGS = 10V - .5 0.800 Ω
ID = 2.25A, VGS = 10V TC = 125oC - - 1.5 Ω
Diode Forward Voltage VSD IS = 3.5A, VGS = 0V 0.7 - 1.5 V
Forward Transconductance (Note 2) gfs ID = 2.25A, VDS = 5V 1.5 2.25 4.5 S
Input Capacitance CISS VGS = 0V, VDS = 25V 200 450 600 pF
f = 1MHz
Output Capacitance COSS 60 150 300 pF
Reverse-Transfer Capacitance CRSS 15 40 80 pF
Turn-On Delay Time td(ON) ID = 2.25A - - 40 ns
VGS ≅ 74V, RG = 50Ω
Rise Time tr - - 50 ns
Turn-Off Delay Time td(OFF) - - 50 ns
Fall Time tf - - 50 ns
Safe Operating Area SOA VDS = 160V, ID = 125mA 20 - - W
VDS = 5.7V, ID = 3.5A 20 - - W
Thermal Resistance Junction to Case RθJC - - 6.25 oC/W

Thermal Resistance Junction to Ambient RθJA Free Air Operation - - 175 oC/W

Source to Drain Diode Specifications

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
Reverse Recovery Time trr TJ = 150oC, ISD = 3.5A, dlSD/dt = 100A/µs 350 - ns
Reverse Recovered Charge QRR TJ = 150oC, ISD = 3.5A, dlSD/dt = 100A/µs 2.3 - µC
NOTES:
2. Pulse test: pulse width ≤ 300µs, duty cycle ≤ 2%.
3. Repetitive rating: pulse width limited by maximum junction temperature. See Transient Thermal Impedance curve (Figure 3).

©2001 Fairchild Semiconductor Corporation 2N6790 Rev. B

 2N6790

Typical Performance Curves Unless Otherwise Specified

1.2 5
POWER DISSIPATION MULTIPLIER

1.0
4

ID, DRAIN CURRENT (A)

0.8
3

0.6
2
0.4

1
0.2

0 0
0 25 50 75 100 125 150 25 50 75 100 125 150
TC , CASE TEMPERATURE (oC) TC, CASE TEMPERATURE (oC)

FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
TEMPERATURE CASE TEMPERATURE

1.0
THERMAL IMPEDANCE

0.5
ZθJC, NORMALIZED

0.2
PDM
0.1 0.1
t1
0.05 t2

0.02 NOTES:
DUTY FACTOR: D = t1/t2
0.01
SINGLE PULSE PEAK TJ = PDM x ZθJC x ZθJC x RθJC + TC
0.01
10-5 10-4 10-3 10-2 0.1 1 10
T1, RECTANGULAR PULSE DURATION (s)

FIGURE 3. MAXIMUM TRANSIENT THERMAL IMPEDANCE

50
OPERATION IN THIS AREA 10V 8V
LIMITED BY rDS(ON) 12 80µs PULSE TEST
ID, DRAIN CURRENT (A)

10 10µs
ID, DRAIN CURRENT (A)

100µs 7V
8
1.0ms
1 VGS = 6V

10ms 4
100ms 5V
TC = 25oC
0.1 TJ = MAX RATED DC 4V
SINGLE PULSE
0.05 0
1 10 100 1000 0 25 50 75 100
VDS, DRAIN TO SOURCE (V) VDS, DRAIN TO SOURCE VOLTAGE (V)

FIGURE 4. FORWARD BIAS SAFE OPERATING AREAS FIGURE 5. OUTPUT CHARACTERISTICS

©2001 Fairchild Semiconductor Corporation 2N6790 Rev. B

 2N6790

Typical Performance Curves Unless Otherwise Specified (Continued)

12 16
80µs PULSE TEST 10V VDS > ID(ON) x rDS(ON) MAX 25oC

ID(ON), ON-STATE DRAIN CURRENT (A)

9V 80µs PULSE TEST -55oC
8V
ID, DRAIN CURRENT (A)

12
VGS = 7V
8 125oC

8
6V

4
5V 4

4V
0
0 2 4 6 8 10 0 2 4 6 8
VDS, DRAIN TO SOURCE VOLTAGE (V) VGS, GATE TO SOURCE VOLTAGE (V)

FIGURE 6. SATURATION CHARACTERISTICS FIGURE 7. TRANSFER CHARACTERISTICS

1.5 2.2
PULSE DURATION = 2.0µs ID = 2A
INITIAL TJ = 25oC
VGS = 10V
rDS(ON), DRAIN TO SOURCE ON

NORMALIZED ON RESISTANCE
VGS = 10V 1.8
RESISTANCE (Ω)

1.0
1.4

VGS = 20V 1.0

0.5

0.6

0 0.2
0 5 10 15 20 -40 0 40 80 120 150
ID, DRAIN CURRENT (A) TJ, JUNCTION TEMPERATURE (oC)

FIGURE 8. DRAIN TO SOURCE ON RESISTANCE vs GATE FIGURE 9. NORMALIZED DRAIN TO SOURCE ON

VOLTAGE AND DRAIN CURRENT RESISTANCE vs JUNCTION TEMPERATURE

1.25 1000
VGS = 0V, f = 1MHz
NORMALIZED DRAIN TO SOURCE

CISS = CGS + CGD

1.15 800 CRSS = CGD
BREAKDOWN VOLTAGE

C, CAPACITANCE (pF)

COSS = CDS + CGD

1.05 600

CISS
0.95 400

0.85 200
COSS
CRSS
0.75 0
-40 0 40 80 120 160 0 10 20 30 40 50
TJ, JUNCTION TEMPERATURE (oC) VDS, DRAIN TO SOURCE VOLTAGE (V)

FIGURE 10. NORMALIZED DRAIN TO SOURCE BREAKDOWN FIGURE 11. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
VOLTAGE vs JUNCTION TEMPERATURE

©2001 Fairchild Semiconductor Corporation 2N6790 Rev. B

 2N6790

Typical Performance Curves Unless Otherwise Specified (Continued)

5.0 102
80µs PULSE TEST TJ = -55oC
TJ = 25oC

IDR, REVERSE DRAIN CURRENT (A)

4.25
gfs, TRANSCONDUCTANCE (S)

TJ = 25oC
3.75 TJ = 150oC

3.0 TJ = 125oC
10
2.25

1.50
TJ = 150oC

0.75
TJ = 25oC
0 1
0 2 4 6 8 10 12 14 0 1 2 3 4
ID, DRAIN CURRENT (A) VSD, SOURCE TO DRAIN VOLTAGE (V)

FIGURE 12. TRANSCONDUCTANCE vs DRAIN CURRENT FIGURE 13. SOURCE TO DRAIN DIODE VOLTAGE

20
ID = 7A
VGS, GATE TO SOURCE VOLTAGE (V)

VDS = 160V
15 VDS = 100V
VDS = 40V

10

0
0 4 8 12 16 20
Qg, TOTAL GATE CHARGE (nC)

FIGURE 14. GATE TO SOURCE VOLTAGE vs GATE CHARGE

©2001 Fairchild Semiconductor Corporation 2N6790 Rev. B

 2N6790

Test Circuits and Waveforms

VDS
BVDSS

L tP
VDS

VARY tP TO OBTAIN IAS

+ VDD
REQUIRED PEAK IAS RG
VDD
VGS -
DUT

tP
0V IAS
0
0.01Ω
tAV

FIGURE 15. UNCLAMPED ENERGY TEST CIRCUIT FIGURE 16. UNCLAMPED ENERGY WAVEFORMS

tON tOFF

td(ON) td(OFF)

tr tf
RL VDS
90% 90%

+
VDD 10% 10%
RG
- 0

DUT 90%

VGS 50% 50%

PULSE WIDTH
VGS 10%
0

FIGURE 17. SWITCHING TIME TEST CIRCUIT FIGURE 18. RESISTIVE SWITCHING WAVEFORMS

VDS
CURRENT (ISOLATED
REGULATOR SUPPLY)
VDD

SAME TYPE Qg(TOT)

AS DUT VGS
12V
0.2µF 50kΩ Qgd
BATTERY
0.3µF
Qgs

D
VDS

G DUT
0

IG(REF) S
0
VDS IG(REF)
IG CURRENT ID CURRENT
SAMPLING SAMPLING
RESISTOR RESISTOR 0

FIGURE 19. GATE CHARGE TEST CIRCUIT FIGURE 20. GATE CHARGE WAVEFORMS

©2001 Fairchild Semiconductor Corporation 2N6790 Rev. B

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ACEx™ FAST  OPTOLOGIC™ SMART START™ VCX™
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FACT Quiet Series™ MICROWIRE™ SILENT SWITCHER  UltraFET 
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Definition of Terms

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Advance Information Formative or This datasheet contains the design specifications for
In Design product development. Specifications may change in
any manner without notice.

Preliminary First Production This datasheet contains preliminary data, and

supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.

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any time without notice in order to improve design.

Obsolete Not In Production This datasheet contains specifications on a product

that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.

Rev. H4