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Power MOSFET

Power MOSFETs are high-power transistors used in switching applications due to their efficiency and fast switching speed. They come in various types, including N-channel and P-channel, with N-channel enhancement-mode MOSFETs being the most popular for power switching. Key features include high switching speed, low on-state resistance, and thermal stability, making them suitable for applications like power supplies, motor drives, and audio amplifiers.

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13 views4 pages

Power MOSFET

Power MOSFETs are high-power transistors used in switching applications due to their efficiency and fast switching speed. They come in various types, including N-channel and P-channel, with N-channel enhancement-mode MOSFETs being the most popular for power switching. Key features include high switching speed, low on-state resistance, and thermal stability, making them suitable for applications like power supplies, motor drives, and audio amplifiers.

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nobori7801
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© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
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A Power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a type of transistor

designed to handle high-power levels. It is widely used in switching applications and power
electronic circuits due to its high efficiency, fast switching speed, and ease of control.

MOSFETs can be of different types, including:

• Depletion Mode: Normally ON. Applying the VGS would turn it OFF.

• Enhancement Mode: Normally OFF. Applying the VGS would turn it ON.

• N-channel MOSFETs: positive voltages and currents.

o Electrons are the majority carriers.

o Lower on-state resistance and faster switching compared to P-channel MOSFETs.

o Preferred for high-power applications.

• P-channel MOSFETs: negative voltages and currents.

o Holes are the majority carriers.

o Higher on-state resistance and slower switching.

o Typically used in low-power applications or as complementary switches.

• Low voltage MOSFETs: BVDSS from 0 V to 200 V.

• High voltage MOSFETs: BVDSS greather than 200 V.

N-channel enhancement-mode MOSFETs are the most popular type used in power switching circuits
because of their low RDS(on) (on-state resistance) compared to P-channel MOSFETs.

Working Principle

• Off State (Cutoff): When the gate-to-source voltage (VGS) is less than the threshold voltage
(Vth), the MOSFET remains off, and no current flows between the drain and source.

• On State (Saturation): When VGS exceeds Vth, an inversion layer (channel) forms, allowing
current to flow from the drain to the source.
MOSFET is a voltage controlled device with 3 terminals:

• Gate (electrically insulated from the semiconductor)

• Drain

• Source

When a voltage applied between the Gate and the Source reaches a certain threshold
(VGS(th) or threshold G-S voltage), the device is able to support current conduction between the Drain
and the Source (ID or drain current).

MOSFET simplified structure

When a voltage applied between the Gate and the Source is below VGS(th), the device will withstand a
voltage up to BVDSS (or breakdown voltage).

MOSFETs can be used as a signal amplifier (linear operation) or as a switch in power applications.
Key Features of Power MOSFETs

1. High Switching Speed:

o Power MOSFETs switch on and off quickly, making them ideal for high-frequency
applications.

2. High Input Impedance:

o They have a very high input impedance, which minimizes the gate current required
to control the device.

3. Voltage-Controlled Device:

o Unlike BJTs, which are current-controlled devices, Power MOSFETs are controlled by
voltage applied to the gate terminal.

4. Low On-State Resistance (R DS(on))

o Power MOSFETs have low resistance in the conducting state, reducing conduction
losses.

5. Thermal Stability:

o They have positive temperature coefficients, which means their resistance increases
with temperature, helping in current sharing in parallel configurations.

Characteristics of Power MOSFET

1. Threshold Voltage (Vth)

o The minimum gate-to-source voltage required to turn the MOSFET on.

2. Drain-Source Voltage (VDS):

o The voltage across the drain and source terminals when the MOSFET is in operation.

3. On-State Resistance (RDS(on))


o Resistance between the drain and source in the on state, determining conduction
losses.

4. Maximum Current (I D(max))

o The maximum current the MOSFET can handle without damage.

5. Power Dissipation:

o Power lost due to the on-state resistance and switching transitions.

Advantages of Power MOSFETs

• High efficiency due to low conduction and switching losses.

• Operates at higher frequencies compared to BJTs.

• Simple drive circuitry (voltage control).

• Thermal stability and robustness.

Applications of Power MOSFETs

1. Power Supplies: Used in SMPS (Switch Mode Power Supplies) for high-efficiency power
conversion.

2. Motor Drives: Used in electric vehicle controllers, fans, and industrial motors.

3. Inverters: Used in solar inverters and uninterruptible power supplies (UPS).

4. RF Applications: High-frequency circuits.

5. Audio Amplifiers: For driving large loads with minimal distortion.

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