Design of LED constant current driving circuit

Mengzhang Cheng฀

Xiamen Institute of Technology

Xinyu Yu
Xiamen Institute of Technology

Research Article

Keywords: Constant Current Driver, Buffer Circuit, Sampling Circuit, Negative Feedback Circuit, Bandgap
Reference

Posted Date: March 20th, 2024

DOI: https://doi.org/10.21203/rs.3.rs-4116065/v1

License:   This work is licensed under a Creative Commons Attribution 4.0 International License.
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Additional Declarations: No competing interests reported.

 Design of LED constant current driving circuit
Mengzhang Cheng， Xinyu Yu *
The High Educational Key Laboratory for Flexible Manufacturing Equipment Integration of Fujian
Province, Xiamen Institute of Technology, Xiamen, Fujian, 361021, P. R. China
e-mail: [email protected]

Abstract

A 3W series LED constant current drive integrated circuit is designed in this paper. The driver can provide a constant
current of 350mA for LED devices with over temperature and over voltage protection. When the power supply voltage
fluctuates within ± 10%, the output driving current changes less than 5%; When the temperature of chip varies between 0
º C and 120 º C, the change in output driving current is less than 5%. The chip includes constant current drive, over
temperature, and over voltage control circuits, as well as high-power driving NMOS devices. The control circuit consists
of a bandgap voltage reference, an error amplifier, a sampling circuit. The bandgap voltage reference provides three
reference voltages that are independent of temperature and power supply voltage; The sampling circuit and operational
amplifier form a negative feedback circuit, allowing the sampling NMOS and power NMOS to operate at the same
temperature and current density, so that the sampling current can more accurately reflect the changes in the output
driving current of the power NMOS, and improve the control accuracy of the output driving current. By using a feedback
control circuit, the sampling current tends to be constant, thereby achieving the goal of controlling the output driving
current. The automatic adjustment of output current is achieved through over temperature and overvoltage circuits,
which not only ensures the continuity of output current but also effectively ensures the safety of LED devices.

Keywords: Constant Current Driver; Buffer Circuit; Sampling Circuit; Negative Feedback Circuit; Bandgap Reference

1. Introduction
In today's increasingly insufficient energy and serious environmental problems, power LEDs are gradually replacing
traditional incandescent and fluorescent lamps as the new generation of lighting sources due to their advantages of high
efficiency, energy conservation, environmental protection, long lifespan, and high reliability. The gradual improvement
of high-power LED performance and the huge lighting commercial market have driven the vigorous development of
LED industry based on lighting systems worldwide, and have also led to significant development in the research and
development of high-efficiency and low-cost lighting LED driver chips. Integrated circuits that can be used as LED
driver power supplies can be divided into three types: constant current drive, charge pump drive, and inductive switching
power supply drive [1]. Due to the fact that the emission rate and intensity of light-emitting diodes are proportional to the
forward current of the diode, constant current source driving LED is the simplest solution to achieve brightness control;
Charge pump driven LED is a power conversion device used as an LED driver, which can generally be used for low-
power LED driving; Inductive switching power supply drives LED using inductors as energy storage devices, which are
generally used to drive LED in a boost mode. The voltage increase value often exceeds that of the charge pump, and due
to its high output voltage, So, most drives are connected in series with LEDs [2].
The three LED driving methods each have their own advantages and disadvantages, and can be applied in different
application area. The charge pump driving method is suitable for low-power LED driving and is easy to integrate, but the
voltage increase cannot be too high; Inductive LED drivers are suitable for high current boost drives, with the conversion
efficiency of over 85%]. The disadvantage is that there is high switching noise and it is difficult to integrate inductors;
Constant current source driving LED is a relatively compromise and optimal driving solution. By using an integrated
constant current source to power the LED, consistency in brightness and chromaticity can be achieved. A 3W LED
driver integrated circuit is designed in this paper, which using 0.6um silicon 5V standard CMOS technology. The
constant current value of the LED driver is 350mA, and the output driving current changes less than 5% when the power
supply voltage changes within ± 10% or the temperature changes within the range of 0 º C to 120 º C [3].
 2. LED driver block
The system block of LED constant current drive is shown in Figure 1. It includes a bandgap voltage reference with three
bandgap voltage reference voltages (1.3V, 0.9V, 0.7V) that are independent of temperature and power supply voltage
changes, an overvoltage and an over temperature protection circuit, a low-power constant current drive, and a control
LED power NMOS. The working voltage of the chip is 5V, and the output driving current is 350mA [4]. In the LED
driver block, the constant current drive circuit is the main block of the entire block, which directly affects the brightness,
lifetime, and other performance of the LED. The main control principle here is amplifies the difference between the
sampling voltage and the reference voltage using an error amplifier, and automatically adjusts the LED driving current
through a negative feedback circuit [5].

Vdd

Over
Vref1 Voltage Vout1
Bandgap protec- ow power
voltage tion Constant Iset
reference Vref2 current M
Over
tempe-
Vout2 drive
Vref rature
protect

Fig.1 Block of 3W LED Constant Current Driver

3. Design of power NMOS and driving circuit

3.1 Determination of LED equivalent circuit
As the driver of LED, there must be an LED equivalent model. The I-V characteristics of LED with a rated power
of 3W~5W under a power supply voltage of 5V are shown in Figure 2. According to Figure 2, the turn-on voltage of the
LED is around 3V, and when the forward bias VF is 3.5V, its forward current IF is equal to 350mA. Therefore, its
characteristics can be approximated using VF=Vturn_on+ r ˟ IF, and r=1.429Ω can be obtained. Therefore, LEDs ranging
from 3W to 5W can be equivalently connected in series with a 3V voltage source and a 1.429Ω resistor [6].
3.2 Determination of Gate Voltage for Power NMOS
Due to the forward working voltage of the 3W light-emitting diode is 3-3.6V and the power supply voltage is 5V, the
drain voltage of the power NMOS is 1.4V-2V. In order to avoid the impact of process variability and ensure that high-
power NMOS can operate in a saturated region when taking on a LED externally, it is necessary to meet the following
requirements:
VDS 2  VGS 2 − VTH
(1)
VG 2  VD 2 + VTH = VDD − VF + VTH
(2)
From the above equation, it can be seen that to ensure that the V F is between 3V and 3.6V, the power NMOS can operate
in the saturation region, and its gate voltage VG2 needs to meet the following requirements:
VG2  VDD − VF + Vth = 5 − 3.6 + 0.728 = 2.128
(3)
On the one hand, VG2 should be kept as small as possible to ensure that M 2 can work in a deeper saturation area, which
can avoid the situation where M2 immediately leaves the saturation region when the drain voltage of M2 fluctuates
slightly; On the other hand, VG2 should be as large as possible, so that when M2 needs to provide a constant driving
current of 350mA, the W/L ratio of M2 can be appropriately reduced, that is, the area occupied by M 2 can be reduced.
Taking into account the above two factors,VG2=1.3V [7].
3.3 Determination of W/L of power NMOS
After determining the gate voltage of the power NMOS, its W/L ratio is also determined based on its operating current of
350mA. The current formula for NMOS operating in the saturation region is:
 1 W 
I = nCOX   (VGS − VTH )
2
(4)
2 L

Fig.2 I-V characteristics of LED

The ratio (W/L=5250) of the power NMOS can be obtained. In addition, in order to minimize the channel modulation
effect in its saturated operating region, it is necessary to increase the channel length of the power NMOS as much as
possible to ensure the driving current which is relatively constant [8].
3.4 Design of low power constant current drive circuit
The low-power constant current drive circuit is shown in Figure 3. The equivalent model of LED is a 3V voltage source
and a 1.429 resistor connected in series; The power supply voltage is 5V, and the bandgap voltage reference provides a
reference voltage of 1.3V; Error amplifier, M 1, M3, and R1 form voltage series negative feedback; M1 and M2, M4 and
power NMOS M5 form a mirror current source[9]. By comparing and amplifying the sampled voltage and reference
voltage, the voltage series negative feedback of the operational amplifier output voltage is completed to ensure the
stability of the LED driving current of 350mA. Because M1, M2, M3, and M4 are same size, the current flowing through
M1, M2, M3, and M4 is same too. The W/L of power NMOS M5 is 525 times that of M4, and both M4 and M5 operate in
the saturation area, that is, ILED=525Id4. If ILED is constant at 350mA, then Id4=IR1=666.67uA. From IR1=Vref/R1=1.3V/R1,
it can be obtained that R1=1.875K  [10].
Vdd

DC
M1 M2

R2

Bandgap Vref
In+ In-

out

voltage M3
Vout
reference
M4 M5

R1

Fig.3 Low power constant current drive circuit

4. Design of operational amplifiers and bandgap voltage reference

4.1 Design of bandgap voltage reference
The basic circuit of the bandgap voltage reference is shown in Figure 4. It uses a PNP transistor with a positive
temperature coefficient △Vbe and a negative temperature coefficient Vbe, add together in a certain proportion, to obtain a
reference voltage with a basically zero temperature coefficient. The function of the operational amplifier in the figure is
to place the circuit in deep negative feedback, so that the voltage at points A and B are equal. M2, M4, and M5 form a
current mirror, with equal drain current (I 1=I2=I3=I). Transistor Q1, Q2, and Q3 are substrate PNP transistors for diode
connection, with an area ratio of 8:1:1. Therefore:
I1R1 + VEB1 = VEB 2
(5)
I
Veb = VT ln
Is
(6)
R2
VREF = VT ln ( I s1 I s 2 ) + VEB 3
R1
(7)
Vdd

I1 I2 I3
M2 M4 M5

out

In- In+
V ref
A B

R1 C

R2
Q2 Q1

Q5

Fig.4 Basic Circuit of Bandgap Voltage Reference

Due to the existence of a certain offset voltage VOS in the actual operational amplifier, the actual output voltage is:
R2
VREF = VT ln ( I s1 I s 2 ) − VOS  + VEB 3 (8)
R1 
The voltage offset of an operational amplifier can lead to relatively large reference output voltage errors. In addition to
its own offset, the offset voltage of an operational amplifier also includes voltage offsets caused by power supply voltage
fluctuations and process mismatches, with its own offset playing a major role. In order to reduce reference output voltage
errors, two-stage operational amplifiers should be used, with amplification gain as high as possible.

Using two diodes in series in a bandgap voltage reference circuit is another method to reduce the output reference
voltage error caused by operational amplifier. The complete bandgap voltage reference is shown in Figure 5. The overall
circuit consists of two parts, one is the bandgap core circuit, and the other is a voltage series negative feedback circuit
composed of a single-stage amplifier.
M1~M4, Q1~Q4, R1, and two-stage operational amplifiers form the bandgap reference core circuit, and their working
principle is as described above. The only difference is that Q 1 and Q2, and Q3 and Q4 have equal emission area,
respectively forming a series diode to reduce the impact of operational amplifier offset voltage on output reference
voltage accuracy. The effective area of Q3 is 8 times that of Q1.
M8~M12 constitute a single-stage amplifier; M6 and M7 forms bias circuit for the single-stage amplifier; M5, R2, and Q5
form the bandgap reference voltage output of the bandgap core circuit, where the area of Q 5 is the same as Q1; M13,
R3~R6, form a multi value bias circuit to generate the required output reference voltages of 1.3V, 0.9V, and 0.7V.
In the multi value bias circuit, the C-point voltage is the 1.3V which is bandgap reference voltage output of the bandgap
core circuit, Vref, Vref1, and Vref2 are the bandgap output voltages of 1.3V, 0.9V, and 0.7V, and V C=Vref=1.3V. Therefore,
it can be concluded that:
R5 + R6
Vref 1 = Vref = 0.9V (9)
R4 + R5 + R6
R6
Vref 2 = Vref = 0.7V (10)
R4 + R5 + R6
The simulation results of the output voltage of the bandgap voltage reference circuit changing with temperature are
shown in Figures 6, 7, and 8. The output range of 1.3V, 0.9V, and 0.7V can be controlled within 0.76%, 0.50%, and
0.40%, with the temperature changes from -20 º C to 120 º C . The simulation results of the output voltage of the
bandgap voltage reference circuit varying with the power supply voltage are shown in Figures 9, 10, and 11. The output
range of 1.3V, 0.9V, and 0.7V can be controlled within 0.05%, 0.10%, and 0.10%, with the power supply voltage
changes from 4.5V to 5.5V.
Vdd

I1 I2
M1 M2 M3 M4 M6 M8 M9
M5
M13

out R3

In- In+ V ref

R4
A B

R1 C M10
M11

R2 Vref1
Q2
Q4 R5

Q1 Q3 Q5 M7 M12
Vref2
R6

Bandgap core Single stage differential amplifier

circuit negative feedback circuit

Fig.5 High Performance Bandgap Voltage Reference Circuit

Fig.6 Output Reference Voltage 1.3V Variation with Temperature

Fig.7 Output Reference Voltage 0.9V Variation with Temperature

Fig.8 Output Reference Voltage 0.7V Variation with Temperature

Fig.9 Output Reference Voltage 1.3V Variation with Vdd

 Fig.10 Output Reference Voltage 0.9V Variation with Vdd

Fig.11 Output Reference Voltage 0.7V Variation with Vdd

4.2 Design of operational amplifiers in bandgap voltage reference
The operational amplifier in the bandgap voltage reference is shown in Figure 12. The operational amplifier consists of a bias circuit, a
differential input circuit, and a PMOS load common source amplifier. The power supply voltage is 5V, the frequency compensation
capacitor is CC, and the load capacitor is CL. Due to the use of operational amplifiers as bandgap voltage reference, the requirement for
unit gain bandwidth is not very high. As long as the bandwidth is within the low-frequency, the low-frequency amplification voltage
gain should be as high as possible, not less than 70dB. Figure 13 shows the AC simulation results of the operational amplifier, with a
low-frequency voltage gain of 73.6dB, a phase margin of 76 degrees, and a unit-gain bandwidth of 28.7MHz, meeting the
requirements of the bandgap voltage reference. Figure 14 shows the simulation of the common mode input range of the operational
amplifier, with an input common mode range of 420mV to 4.45V; Figure 15 shows the simulation of the common mode rejection ratio
of the operational amplifier, with a CMRR of 67.1dB at low frequencies; Figure 16 shows the simulation of the operational amplifier
power supply rejection ratio, with a low-frequency PSRR of 69.45dB, meeting the requirements of a bandgap voltage reference.

M1 M2 M7 M12

M4 M3 M8 M9
V In- VIn+
Cc
Vout
CL

M5 M6 M10 M11

M13

R1

Bias circuit Differential input PMOS load common source

‘’
amplifier amplifier

Fig.12 Operational Amplifier Circuit

 Fig.13 AC Simulation of Operational Amplifier

Fig.14 Simulation of Common Mode Input Voltage of Operational Amplifier

Fig.15 Simulation of Common Mode Rejection Ratio of Operational Amplifier

 Fig.16 Simulation of Power Rejection Ratio of Operational Amplifier
4.3 Design of an automatic over temperature current adjustment circuit
In LED driver circuits, when the driving current exceeds the allowable current of the LED, the chip often activates the
LED over current protection circuit, reducing the current in the circuit to zero in a short period of time, achieving the
purpose of protecting the circuit. However, power cut off suddenly is not allowed for LED lighting application.
Therefore, it is necessary to design a circuit that can prevent circuit over temperature without immediately powering off.
A circuit that can automatically adjust the driving current as the circuit over temperature is shown in Figure 17. In Figure
17, the circuit mainly consists of a bandgap voltage reference that provides reference voltages Vref and Vref2, an
operational amplifier, and a switching transistor. In order to isolate the influence of the switching transistor on the
bandgap voltage reference, buffers composed of operational amplifiers are used to the outputs of both bandgap
references. The reference voltage Vref2=0.7V is connect to the positive input of the operational amplifier, and the emitter
of the transistor Q1 is sampled at the negative input of operational amplifier. When the temperature of the chip does not
reach the over temperature protection point, the voltage at the positive input of the operational amplifier is less than the
voltage at the negative of operational amplifier and the output voltage of the operational amplifier is at a low level. The
PMOS M1 conducts, while the NMOS M2 and M3 cut off. The 1.3V reference voltage of the bandgap is sent to the low-
power constant current circuit through M 1, making the power NMOS working in normal. When the temperature exceeds
the over temperature protection point and continues to rise, the Q 1 emitter voltage gradually decreases, and the positive
input voltage of the operational amplifier is higher than the negative input voltage. The operational amplifier outputs a
high level, with PMOS M1 turned off and NMOS M2 and M3 conducting. The bandgap reference voltage Vref is supplied
to a low-power constant current circuit after being reduced in series through two NMOSs and a resistor. Although the
power NMOS is does work, but the output current significantly decreases, achieving the goal of continuously supplying
power and protecting the power NMOS during over temperature. The low-power constant current circuit returns to
normal operation with the temperature returns to working temperature. Connect the over temperature protection circuit to
the low-power constant current circuit, set R1 to 100  , and the temperature range is from 0 º C to 150 º C, the
simulation results are shown in Figure 18, it can be seen that the temperature protection point is 104 º C. After passing
104 º C, the output current of the power NMOS quickly decreases. When the temperature is 120 º C, the output current
remains constant at 83mA..
 Vover_temp
Vref

In-
Vref

out
In+
Bandgap
voltage M1 M2
reference Vref2 R1
Vref2

In-
R2

out

M3
In+ In-
In+

out
Vout
Q3

Q1
Q2

Fig.17 Automatic regulation circuit for over temperature current

Fig.18 Simulation diagram of automatic regulation of over temperature current

4.4 Design of overvoltage protection circuit
In order to prevent damage of the circuit when the power supply voltage is too high, an overvoltage protection circuit has been
designed. When the power supply voltage exceeds the allowable voltage, the overvoltage protection circuit starts to activate to protect
the chip from damage. Figure 19 is a circuit block of overvoltage protection with voltage division. A reference voltage of Vref1=0.9V
of a bandgap voltage reference is connected to the positive input of the operational amplifier, and the power supply Vin is connected to
the negative input of the operational amplifier through a resistor voltage divider. When the power supply voltage is in normal, the
positive input voltage of the operational amplifier is greater than the negative input voltage, and the output of the operational amplifier
is at a high level. The output of the operational amplifier is connected to the power control switch, and the chip works normally. When
the power supply voltage is too high, the positive input voltage of the operational amplifier is lower than the negative input voltage,
and the output of the operational amplifier is at a low level, the power supply circuit is cut off. The function of NMOS M4 is to prevent
frequent high and low level changes in the operational amplifier, which forms a retardation comparator with the operational amplifier.
When the output of the operational amplifier is high-level, M4 conducting, R3 is shorted When the output of the operational amplifier
is low-level, M4 cuts off, R3 is connected to the circuit, causing the voltage at the negative input of the operational amplifier to be
higher. Keeping the output of the operational amplifier at a low level is equivalent to adding a delay link to the conversion of high and
low levels of the operational amplifier. Figures 20 and 21 are simulation results of overvoltage protection circuits. The voltage Vin
range for setting the overvoltage protection point is 0-2V, Vref1=0.9V. From Figures 20 and 21, it can be seen that the maximum
applied voltage to the drain of the power NMOS is 1V, otherwise the chip may be burned out. From the simulation results, it can be
concluded that when the voltage reaches 1.09V, the output voltage of the operational amplifier changes from high to low, completing
the change from conduction to cut off of the power switch and achieving overvoltage protection. When the voltage gradually drops
from a higher voltage to 0.95V, the operational amplifier flips from a low level to a high level, achieving the process of power supply
voltage from off to on.
 Bandgap V ref1

In+
voltage

out
reference

In-
Vout

V in
DC R1

R2

R3 M4

Fig.19 Overvoltage protection circuit diagram

Fig.20 Overvoltage protection circuit simulation 1

Fig.21 Overvoltage protection circuit simulation 2

5. Overall circuit simulation

The overall circuit block of the 3W series LED constant current drive is shown in Figure 1. Figure 22 shows the
characteristics of the output current changing with temperature. When the temperature changes from 0 º C to 120 º C, the
change in output current is controlled within 5%. Over temperature protection is achieved when the temperature reaches
104 º C; Figure 23 shows the transient simulation results of the circuit. When the power supply voltage is 5V, the output
current of the circuit is 350mA.; Figure 24 shows the characteristics of the output current as a function of the power
supply voltage. It can be seen that when the power supply voltage changes from 4.5V to 5.5V, the change in output
current can be controlled within 5%, which meets the design requirements.

Fig.22 Temperature dependent characteristics of LED output current

Fig.23 Transient Simulation Results of LED Output Current

 Fig.24 Characteristics of LED Output Current Variation with Power Supply Voltage

6. Conclusion

This paper presents the design of a 3W series saturated LED constant current driver chip. The circuit includes a bandgap
voltage reference, negative feedback circuit, current sampling circuit, high-power driving circuit, over temperature
protection circuit, and over voltage protection circuit. The chip design goal is to provide a constant driving current of
350mA for 3W LEDs when power supply voltage or temperature changes. The chip integrates a constant current control
circuit and a power driven NMOS, achieving compatibility design between power devices and control circuits. The
implementation of the bandgap voltage reference circuit of the chip controls the output reference voltage variation within
5% when the working voltage varies between 4.5V and 5.5V or when the temperature varies between 0 º C and 120 º C;
And achieved over temperature and over voltage protection. The control part of the entire chip realizes that when the
power supply voltage fluctuates between ± 10% or the temperature changes between 0 º C and 120 º C, the output
driving current change is controlled within 5%; Over temperature and over voltage protection are achieved.

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