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CSIR-NET, IIT-JAM, GATE, JEST, TIFR, BARC, ISRO,

DRDO, RPSC (1st), PGT, BHU, DU, CU, RU, M.Sc.

A. Singh Sir
PHYSICS Minor Test-05
(Assistant Professor (MPPSC)
SRO,Cabinet Seeretariat,
Govt of India)

(Electronics)
Date: 07/08/2023 Time: 90 Min
Max. Marks: 90
Instructions:
1. Attempt all questions. Test paper is carrying total 30 question with 3 marks
each.
2. Read the Questions carefully and mark your appropriate response to the OMR
sheet.
3. All questions have negative marking of 1/3 for each wrong answer.
4. Any other belongings like Book/ Notes / Electronic device etc are not
permitted in the examination hall.
S. Submit your answer sheet (OMR Sheet) to the invigilator before leaving the
examination hall.

1. A40 V dc supply is connected across the network comprising of Zener and

silicon diodes as shown. The regulated voltages Vot, Vo2 and source current I,
are

6VA Ze

40 V Si V Vo2
Yo1
3.3V Ze

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(a) 2.4 V, 5.1 Vand 21.7 mA (b) 3 V, 6 Vand 22.7 mA

(c) 3.3 V, 9.3 Vand 20.5 mA (d) 4v, 10V and 30 mA

2. In the voltage regulator shown in the figure, the load current can vary from
100 mA to 500 mA. Assuming that the Zener knee current is negligibly small
and Zener resistance is zero in the breakdown region), the value of R is

Variable load
12V( sv B 100 to S00 mA

70
(a) 72 (b) 7092 (c) (d) 1402

3. Circuit shown below is a

10 ka
1 nF

2 k2

ov,

(a) Low pass filter with cut-off frequency f = 15.9 kHz

(b) High pass filter with cut-off frequency f=15.9 kHz
(c) High pass filter with cut-off frequency f =79.5 kHz
(d) Low pass filter with cut-off frequency f =79.5 kHz
4. The output voltage of the following adder circuit will be:
10 k2 20 ka
-3VOW W

20 kQ
-3Vo W
10 kQ
44VO W

(a)9/100 (b) 1/10 (c) 1/9 (d) 10

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5. In an n-type Semiconductor the Fermi level lies 0.3 eV below the conduction
band at 300 K. If the temperature is increased to 330 K, where does the new
position of the Fermi level lie?
(a)0.55 eV below the conduction band
(b) 0.44 eV below the conduction band
(c) 0.33 eV belowthe conduction band
(d)0.27 eV below the conduction band

6. In the following limiter circuit, an input voltage VË= 100 sin(100zt) is applied.
Assume that the diode drop is 0.7 V when it is forward biased. The Zener
breakdown voltage is 6.8 V.

Di
D,ZA Vot
zosv

The maximum and minimum values of the output voltage respectively are
(a) 6.1V, -0.7 V (b) 0.7 V, -7.5V (c) 7.5 V, -0.7 V (d) 7.5 V, -7.5 V
7. The Q-point for the Zener diode shown below is

20 v) S3.6 KO

(a) (0.34 mA. 4 V)(b) (0.34 mA. 4.93 V) (c) (0.94 mA, 4 V) (a) (0.94 mA, 4.93 V)

8. In an abrupt p -n junction, the doping concentrations on the p -side and n -

side are N, =9x16 /cc and N, =1x10'°cc . If the p - n junction is increase
biased and the total depletion width is 30m. then the value of depletion width
on the donor side is
(a) 2.7 um (b) 0.3 um (c) 3 um (d) 0.27 m

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9. The peak to peak voltage for the following circuit containinga Si - based
diode is
w

30

301"

(a) 17.3V (b) 29.3V (c) 42.7V (d) 47.0V

10. The reading in the ammeter A is

200ohm
14
300 oh11|
¿100ohm

(a) 0.5454 A (b) 0.4545 A (c) 0.6565 A (d) 0.75 A

11. In the following inverting feedback circuit of an operation amplifier, calculate

the voltage gain. Take R = R2 = Ra = 100k ohm R= R = 10k ohm.
R

R,

(a) -12/11 (b) 12/11 (c) 11/12 (d) -11/12

12. Determine the output voltage

250
500 kn
100 ka

(a) 10(V, - Vi) (b) -10(v-Vi) (c) -10(V, - V2) (d) None of these
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13. For the given zener diode network, the range of load resistance RL that will
maintain output voltage to 10V be: (V=10V, Izm = 32mA)

V = 50 V

(a)250 -1.25 kQ (b) 350 Q-1.50kQ (c) 150Q -1.20 kQ

(d) 250 Q-1.50kQ
NGH
14. A parallel diode configuration is shown in figure given below, the value of the
diode currents I; and I, are?
0.33 kS2

10 S Si

(a) I, = 15mA, I, = 15mA (b) I, =14mA, I, =14mA

(c) I = 15mA, I;= 14mA (d) I =14mA, l2=15mA
15. Pure silicon at 300 Khas equal electron and hole concentration of 2 x 101°m.
It is doped by by indium to the extent one part in 10'silicon atom. If thedensity
of silicon is 4 x 109m, then the electron concentration in the doped silicon is
(a) 10°m3 (b) 10'm3 (c) 10°m:3 (d) 101°m
16. If VA-V= 6V, then Vc- Vo is
R 20 V
W

10
10V
R

2A
V
5V

(a) -5V (b) 2V (c) 3V (d) 6 V

17. Consider the circuit as shown below, choose the correct option(s):

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(a) For Vi <0, Vo = v, (b) For V>0, Vo=0

(c) For V,<0, Vo=0 (d) For V>0, V, =-(R /R)V,
18. Consider an op-amp circuit shown in figure, input to the circuit is shown in
figure, Initially voltage across capacitor is zero,
0.1 uF

10 kQ
W
t(ms)

the output waveform will be

V

4 t(ms)

(a) (b)

t(ms)
(c) (d)
19. Two Ge diodes are connected inseries opposition across a5V battery as shown
in figure. Find the voltage across diode Di. Assuming breakdown voltage of
diodes is greater than 5V.
+

D
D

(a) 5 v (b) v (c) 0.018V (d) 4.8

20. The operational amplifier is shown in the figure below. Find the value of i_?

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200 2

V,=2V
R=20 Ve

(a) 102 A (b) 101 A (c) 100 A (d) 105 A

21. In the circuit shown below diodes has cutin voltage of 0.6 V. The diode in ON
S I
state are
D D,

182

(a) only D1 (b) Only D: (c) both D, and D2 (d) None of these
22. For the circuit shown, choose correct result (V, = 0.7 V)?

D,
6V

(a) D, is in reverse bias (b)Vo = 2.3 V

(c) Ds is in reverse bias (d) I= 1.15 mA
23. The light emitting diode (LED), shown in the above figure has avoltage drop of
2V. The current flowing through LED 0s MA (your answer should be
first decimal place)
p+10v
680 2

Radiated light

24. The resistivity of a semiconductor

(a) increases with temperature
(b) decreases with temperature
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 (c) is independent of temperature
(d) is independent of the doping concentration
25. The concentration of electron or holes in an intrinsic semi-conductor is
proportional to
la) (b) (c) exp (d) exp E,
KT KT KT 2KT

Where symbols have their usual meanings

26. In a transistor the current amplification factor a is 0.9. The transistor is
connected in common base configuration. The change in collector current,
when base current changes by 4 mA 0s
(a) 4 mA (b) 12 mA (c) 24 mA (d) 36 mA
27. The current through the ideal diode in the circuit given below is
s062

5092
5S23
(a) 200 mA (b) 181 mA (c) 100 mA (d) 250 mA
28. Foratransistor ß = 50 and base current Ig = 25 A, the emitter current will be:
(a) 2.525 MA (b) 1.275 mA (c) 1.835 mA (d) 1.645 mA
29. If the Si diode and the Ge diode conduct at 0.7 V and 0.3 V respectively, then
the value of output voltage (Vo) and current (1) in the given circuit shall be
Ge

Si
12V S KO

(a) 11.7 Vand 2.34 MA (b) 10.5Vand 2.30 mA

(c) 12.7 V
and 3.24 mA (d) 10.7Vand4.23 mA
30. In the common base mode of a transistor if the 1.95 UA and 50 A, the emitter
current will be:
(a) 2.0 mA (b) 1.90 mA
(c) 2.45 mA (d) 0.05 MA
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