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The document outlines an assignment on microelectronics, focusing on various calculations and analyses related to silicon semiconductors, pn junctions, and diode circuits. It includes tasks such as finding carrier concentrations, calculating current densities, and plotting characteristics for different semiconductor configurations. The assignment is due on April 20, 2025, and is structured into multiple questions covering fundamental concepts in microelectronics.

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Nguyễn Hải Đăng
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6 views

Assignment1

The document outlines an assignment on microelectronics, focusing on various calculations and analyses related to silicon semiconductors, pn junctions, and diode circuits. It includes tasks such as finding carrier concentrations, calculating current densities, and plotting characteristics for different semiconductor configurations. The assignment is due on April 20, 2025, and is structured into multiple questions covering fundamental concepts in microelectronics.

Uploaded by

Nguyễn Hải Đăng
Copyright
© © All Rights Reserved
Available Formats
Download as PDF, TXT or read online on Scribd
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Fundamentals of Microelectronics

Assignment 1
Instructor: Girish Pahwa
TA: Yu-Ling Chang
Submission due date: April 20, 2025

1. Find the equilibrium electron and hole concentrations and the location of the Fermi level for
silicon at 300 K if the silicon contains the following concentrations of shallow dopant atoms:
a. 1×1016 cm-3 boron atoms
b. 3 × 1016 cm-3 arsenic atoms and 2.9 × 1016 cm-3 boron atoms.

2. For an intrinsic silicon semiconductor at 300K, given that the band gap energy is Eg=1.12 eV,
calculate the intrinsic carrier concentration ni .

3.
a. A Si bar 1 μm long and 100 μm2 in cross-sectional area is doped with 1017 cm-3 phosphorus.
Find the current at 300 K with 10 V applied.
b. How long does it take an average electron to drift 1 μm in pure Si at an electric field of 100
V/cm? Repeat for 105 V/m.
Use 𝜇𝑛 = 1350 cm2 /Vs.

4. Consider a silicon sample where the electron concentration varies along the x-direction as:
n(x)=1016 + 5×1015 X (cm−3), 0 ≤ X ≤ 10μm, where X is in micrometers (μm). The electron
mobility is μn=1350 (cm2/V·s), and the diffusivity is related to mobility by Einstein’s relation,
where kT/q=0.02585 (V) at 300K.
a. Compute the diffusion current density Jn,diff at X = 5 μm.
b. If an electric field of 5 V/cm is applied, determine the total electron current density.

5.
a. Sketch the Fermi–Dirac distribution f(E) at room temperature (300 K) and at a lower
temperature such as 150 K. (Qualitative hand drawing).
b. The state distribution in a system is given in the figure below, where each circle represents two
electron states (one is spin-up; one is spin-down). Each electron state can be occupied by one
electron. There is no state below Emin. The Fermi level at 0 K is given. How many electrons are
there in the system?
6. Energy band diagram of a silicon sample at 300K is given below

a. Draw electric potential 𝑉(𝑥).


b. Draw Electric Field 𝜁(𝑥).
c. Does the equilibrium condition prevail? Explain briefly.
d. What are electron and hole concentrations at 𝑥 = 4 µm?
e. What is electron drift current density flowing at 𝑥 = 0?

7. The below figure shows a pn junction, plot (a) charge density, (b) electric field, and (c)
electrostatic potential with respect to this figure.

8. Due to a manufacturing error, the p-side of a pn junction has not been doped. If 𝑁𝐷 = 3 × 1016
cm-3, calculate the built-in potential at T = 300 K.

9. Plot the junction capacitance vs reverse bias voltage (from 0 to 5 V) for a silicon n+-p junction of
area 200 µm2 with 𝑁𝑎 = 5 × 1016 cm-3. Assume n-side Fermi potential, 𝜙𝐹𝑛 = -0.56 V.
10. Consider the circuit shown in Figure(a) for the case in which R = 10 kΩ. The power supply V+
has a dc value of 10 V on which is superimposed a 60-Hz sinusoid of 1-V peak amplitude.
Calculate the diode DC current (ID) and the diode incremental resistance (rd). Assume the diode
to have a 0.7-V drop at 1-mA current. Minimize approximations as much as possible.

11. Figure shows two diodes with reverse saturation currents of 𝐼𝑆1 and 𝐼𝑆2 placed in series

Calculate, 𝐼𝐵 , 𝑉𝐷1, and 𝑉𝐷2 in terms of 𝑉𝐵 , 𝐼𝑆1 , and 𝐼𝑆2 .

12. Plot the I/V characteristic of the circuit shown. Assume 𝑉𝐷,𝑂𝑁 = 0.

13. Assuming that the diodes in the circuits in Figure are ideal, i.e., 𝑉𝐷,𝑂𝑁 = 0 at forward bias, find
the values of the labeled voltage and currents.
14. Plot the output voltage vs input voltage characteristics of the circuits depicted in Figure using an
ideal model for the diodes (𝑉𝐷,𝑂𝑁 = 0). Assume 𝑉𝐵 = 2 V.

15. Figure shows a shunt regulator that utilizes a zener diode whose voltage is 5.1 V at a current of
50 mA and whose incremental resistance is 7-Ω, I =0.25 mA. The diode is fed from a supply of
zener

15-V nominal voltage but can vary by ±1V, through a R(200-Ω) resistor. (a) What is the output
voltage at no load? (b) What is the minimum value of R for which the diode still operates in the
L

breakdown region? Assume supply voltage is at the worst case at 14 V.


16. A 3-V adaptor using a half-wave rectifier must supply a current of 0.5 A with a maximum ripple
of 300 mV. For a frequency of 60 Hz, compute the minimum required smoothing capacitor.

17. A full-wave rectifier is driven by a sinusoidal input 𝑉𝑖𝑛 = 𝑉0 cos(𝜔𝑡), where 𝑉0 = 3 V and 𝜔 =
2𝜋(60 Hz) . Assuming 𝑉𝐷,𝑂𝑁 = 800 mV, determine the ripple amplitude with a 1000 𝜇F
smoothing capacitor and a load resistance of 30 Ω.

18. Beginning with 𝑉𝐷,𝑂𝑁 = 800 mV for each diode, determine the change in 𝑉𝑜𝑢𝑡 if 𝑉𝑖𝑛 changes
from 2.4 V to 2.5 V for the circuits shown in the Figure below.

19. The figure shows a circuit for charging a 12-V battery. If 𝑣𝑠 = 𝑉𝑝 cos(𝜔𝑡) with 𝑉𝑝 = 24 V peak
amplitude, find the fraction of each cycle during which the diode conducts. Also, find the peak
value of the diode current and the maximum reverse-bias voltage that appears across the diode.

20. Plot the currents flowing through D1 and D2 as a function of time if the input is given by 𝑉𝑖𝑛 =
𝑉0 cos(𝜔𝑡) and 𝑉0 > 𝑉𝐷,𝑂𝑁 + 𝑉𝐵1 and −𝑉0 > −𝑉𝐷,𝑂𝑁 − 𝑉𝐵2

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