I

V£ERMATA ,JJJAUAJ TJt:CIINOLO<JJCAt INSTITUTE (VJTI)

j('cnf rnl Tcchnologlruf lnsfltu k, M»trnro,htrA State)
Mnt11ng:1, Mumhnl-400 019

EXAM1NA110N ESE - fi:vcu Scmr~f('f'. ~ l DJ\TE C>f?~ 'ti Oj2024 -

SEMESfER &- -
PROGRAM
1 2024
~rm lJ - FVB.T,•ch (I' h·ctr-lcal) j EXAM
TIME ,_({~ \i~ 1~
~ TIM~ •;L_!:(?_\\'f ~~ _ ; 1:i0 mins - - - - - _ MAR-KS '""100 - - - - - - - - 1
t COCR~E_(C,)ur$e t\,dc) H:,sh' Elcrtrnni~s (H5EE1027 I} __ - - - - - - - - - - ~

Instructions: All questions arc Compulsory

Assume suitable uata •if necessary

Q. l a) E~r,lam Hall Effect.

3/ 5 CO:l

b) A ~1!·stal_ diod: having i_ntemal rcsistauce r~= 20.Q is used fo~ half-wave
~ ~5 C0:2
red1ticat1on. It the apphcd voltage V ::: 50 sm wt and load resistance RL = soon,
find ·
i) Im, Ide-, Im1~
ii) a.c. power input and d.c. power output.
iii) d.c.output voltage
iv) effir icncy of rectification.
Q
c) Fvr the Common-Base circuit as sho~n, determine Ic and Yea. Assum
e the 'p C0:3

trar...siscor to be of silicGn.

7
t Re= J.2kn

ll Vcc=18v
V

d) Convert the following - C0:4

i) (110001)2 = (.____,)10
ii) (372)10 = (_~) 8
iii) (B2F) I 6 =- (_____,)8
i·:) (133)!S :; (__)1 0
v) (23)10 = ( h
Q.2 a) Draw and explain V-I characteristics of Zener diode CO:l

b) For a p-njunction diode, prove that- C0:1

Is::::: -Io
Is = reverse current
V✓here,

Q.3
Io = reverse saturation current
a) Derive the expression for efficiency of Half-Wave Rectifier? a; 10 /

;
b) With neat sketch, explain the working of -
i) Centre-tap full wave rectifier.
7 /10

ii) Full-wave bridge rectifier.

 I L,,

Q.4 a) With suitable circuit arrangement, explain the input-output characteristics for C0:3
Common-Emitter Connection? •

b) With suitable diagram explain in detail TransiRtor as an amplifier in CE C0:3

configuration. Also explain, the analysis of collector currents to prove-
le =ic+ le
where> le= totttl collector current
le• a.c. collector cuttenl due to signal
le is d.c. collector curr~nt(zero signal collector current)

a) Using K-Map realize the following expression usit1g minimum number of gates- C0:4
Q.5
~~ Y _ Lm(t ,3,4.5,7,9, 11, 1S) ~ ~
11) Y -lfM( 1,3,5,7,9, I I, I3, 15) (2) .
~o C0:4 .
b) l mplement the fo tlowing -
i) 32: l MUX using 16: 1 MUX.
ii) 1: 16 DeMux using 1:4 DeMux

\
 (?\o\~
1,t;tO/
VEERMATA JIJABAJ TECIINOLOOICAL INS'l'ITU'l'f: (VJTJ) /
[Ccntrnl Tcchnologfcnl ln~tltufc, Mnharnshfra Stafcl
M11tungn, Mumhnl-400 019
.,

EXAMINATION MST - Even March 2024 f)ATE or~

-
I 5/0J/2024
EXAM
SEMESTER & PROGRAM Flrs1 ycnr liTl?ch EC/ EXTC 'frME
-
OI· I 5pm-(J2:45pm
2nd Semester I
I
TlME ALLO\VED l Hour 30 minute MARKS 40
COURSF (Course Code) Basic Electronic~ (RSETI 022T/RSEL1022T)

Instructions: i) All <tucstions arc Compulsory.

ii) Respons~s for all sub qucstlons should be written together.
iii) Draw suitable diagrams, flow chart & graph wherever requires

Marks CC>
o/ ,.J How to differentiate materials as conductors, scmicond~1ctors and Insulators and 5

y
what is the effect of temperature on these materials? 6J •
A Si diode has ls= IOnA operating at 25"C. Calculate va Iuc of I" for forward bias 4-
• of0.6V (consider ri=2 & Yr=26mV) @·
()11 ~ Elaborate how the voltage is being regulated because of zcncr diode, showing it's 5
regulation characteristics. @r
1
~ Detem1ine the de resistance 5
levels for the diode of Fig
loCmA)
yio = 2 mA (low level) 30
-Jl)_o =20 mA (high level)
clvo=-lOV
20
(reverse-biased)

Jo.

t
-IOV I
C, 0.§' 0-• p (V)
-----.··IM v

?}- J Explain the process by which the light is getting emitted through the diode, Also 1

write ad~antages of the same. ~-

Ji Derive expression ofripple factor & e~fhalf wave rectifier. 6 1

@
·i / For the following l'ig, Detenninc the value of de load current.
4 2

£4V
Cfi

Ri- v
20kf2 °

.j( A bndgc rcctiticr circuit, V1,,m~1-=-230V, N2:N 1=I :4, RL =200n, f, =50Hz. Assuming 2
0
all di9des are ideal, detcnninc the quantities:
\)'.. DC output voltage. @ ,
:./.; PIV of diode .
.Y. Output frequency.

. ********

I
 VEERMATA JIJABAI TECHNOLOGICAL INSTITUTE (VJTI)
[Central Technologlcal Institute, Maharashtra State]
Matunga, Mumbal-400
;
019

EXAMINATION ESE • Even June 2024 DATE OF e, ?, • tJ 6 • 1-8 L/ '1

EXAM
SEMESTER& F. Y. B.Tech (EC/EXTC), sem-11 TIME 9•\&"' q fr) ,.. \ 1..-• \ffl
PROGRAM
TIME ALLOWED 3 Hours MARKS 100
COURSE (Course Code) Basic Electronlcs (R5ET1022T)

Instructions: i) All questions are Compulsory.

ii) Responses for all sub questions should be written together.
iii) Draw suitable diagrams, flow chart & graph wherever requires

Mark CO
~YFind the value of V 01 and V02 5 1
r-J
>
~
.....
..:.c
,.,., >
>
,-

- ..c "'·
>
C
-,.
::);: ';;.~- *~
V,
I•·

X Determine the de resistance levels 5 1

lr,CmA)
/ & ac resistan.c.e levels for the diode 30
of Fig
~1 0 = 2 mA (low level)
Y..? =20 mA (high level)
..p;V0 =-10 V (reverse-biased)
10

-10 V 2
T - ~1-0--=-o-'--.s-----'-11.11-v" l v 1
-+ I lµA

~Determine the germanium PN junction diode current for the forward bias 5 1
voltage of 0.22 Vat room temp~rature 20°C with reverse saturation
current equal to 1 mA.
, j ( Determine current through each diode in the circuit shown below. 5 1
Assume diodes to be similar.
O . .S kO /
1
-~--+- • -·-- · - ··-<> +

1 Im

I
I
~
:I /in a common base connection, current amplification factor is 0.9, find
current gain in Common Emitter configuration. Also calculate determine
the value of base current If collector current Is 0.9mA
4 2

J>( Determine the following for the Fig.

wrfea 6 2
Q!}Vco, .
~CEO•

? e output of the combinational circuit given _t>elow i: 5 2

00 Of ff fO
A-~ w
00 1 X X 1

8 01 X 1

11

fO 1 X

02 (c) Q2 (d)
& What is the minimal form of the Karna ugh map shown below? Assume 5 2
that X denotes a don't care term.

~~ven f(x, y, w, z) = rm(0, 1, 2, 3, 7, 8, 10) + rd(5, 6, 11, 15), where d 5 3

represents the don't-care condition in Karnaugh maps. Find the minimum
sum of products (SOP) form of f(x, y, w, z) using Karnaugh map.

✓oerive ripple factor and efficiency of Half wave rectifier 5 3

t.9)/'For the emitter bias network of Fig , determine: 10 4

~B• M, ~E• ~ ~E-~•~BC·

 1k.l l-
4»,t4 • lto"-f~
L· If \Jou.+::
P.,
Vu., H E- P~~o
fO.tf F

+o MF
1:7\'tl

✓#De sign 2-input EXCLUSIVE-OR using NANO Gate 6 4

6 4
~The output Y of the given circuit

tfFDtDr[)--o,
~ circuit shown in the following figure has five gates, give the function 8 4

at output of each gate.

A
B
c----:it__,,.
y

~< Consider a bridge rectifier circuit with the diodes to be

ideal, with
0
6 2

following parameters: V1=230V, 50Hz, N2'N 1=¼, RL=200

ii) DC Output
Determine :i}{5raw circuit diagram with given parameters
volta geva fP1v of diode, ~tp ut frequency

CP Compare SR Flip-flop, JK Flip-flop, D Flip-flop and T Flip-flop 8 1

1
hexadecimal: 6
«co nve rt the following octal numbers into binary and
a. 234)8

. (365517)8

I
I
I
I
j
 30 mins
Basic Electronics Class Test 10 marks
( 1)
01) Define Transistor. \Vho invented it, in which year and when?
( l)
02) \Vl1ich arc the four important facts about transistor?
( J)
Q3) Explain the transistor terminals?
( I)
04) Define the following with formula-

i) Current Amplification Factor for co.mmon emitter

(I)
Q5) For common base configuration, derive the expression for col1ector current in terms of

base current and leakage current.

( 1)
Q6) For common collector configuration, derive the relation between a and Y.

07) In a transistor circuit, if le =4.9 mA and IE-= 5mA, What is the value of a ? (I)

08) In a transistor, p=45, the voltage drop across 5kn resistance which is connected in the ( I)

collector circuit is 5 volts. Find the base current? (Draw circuit diagram).

Q9) Give comparison of transistor connections. (2)