PAGE No

Forward ejaD CK DATE

Rs Vp NFBy
shockJoy
IF T I6e a/wT)
Na= woltaae across iode
n re com limaHoD actoCla d
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oard
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ra s
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e diode exponenh al
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threshhold bAeak
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voltage
on
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dejineda
above ohich forward curentfHows
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volfage,hen diode i oD- conduHng,

Cur volfaae de neAAO coi lythTLOK

omp, CV Teduces y 2.3a5v
dT -2S mYT
 PACE Ho.

DATE

Keyerg.ebioo urrenT8
YD
Rr

waen p-n JumcHob is Revere biasod oid

Hh

depletionlory ey
er Coass Toe betrier
heigh abe enooasod

oNVi od
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ony due

l
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LUYye

thermalenuotedwnoh,
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senciivetemper eune2
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ii
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co
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ce cuYen
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under
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keuALlybréaln h uDction
9
 PAGE No.

V-T ebaracherigHc diode

ECma)

T
IF
VBRMOMaESpeoficaienA tuch
to Vs Vo VT

ca notbe exceeded
oHeruoise ldiode would be destsoyed,
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Dopia cmce.
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ce

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ce
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sc resistm
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e
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ce

AV
A Same room Eenup sa me forward eurrent
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diode doubled biuon ha Gamaniwmw

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FbbecE b temp
Jorforuoard urren the
d3 ode TSI. e
Forward erren omog E y de pendenh ob emp
becane I4p to mao y corrier
 PAGE 1o.
DATE

o
T 2
Yo P00 V 2,V decreasepe 1
T 26G 700-G0=6 S0mV.
Vo =
Q VE 25mV
Y= V

I Ne/sT)
losafn)
e

Inoei
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ode, CD CT 1pufier
diode er
a
maze
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en capacitene
ected du to diwai
cD= Z8 7-Carrier te ame
-d bam
uCevduan
iC

towe Ceuatam
 PAGE No

8Tunction
Copacitauce DATE

Inopen ckh PN unetlondiode,both Co od er

pegen depending pon the biaalmg one ob them
domi naHng ,
Fep Co domunaHmg
dom maHn
RBD CT
CT
Re
C due to blockinSob majoritcarrierC
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copn c tooce
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varoctoc diode,jor better pergormom ce

CT
CTil
taer e C meuat be a 6mall

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ae sem cenductor Jevice
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tbe appued eyezfebiayvolge
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= steproded diode
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isdulo the
be
min.
c bmee
aroiage ot
do mimaimå
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ipsbe Poiward iaodiode
CDdoping
 PACElo.

DATE

Swple diode1Kck coithideo diode

AWM Vo= Ov
8Ov I 30V 30mA
1

No=-20
To -20m A

MAA I3omA
30V
T2o

AMA

30v

Y ggs
Yo Op

1Ov
- Yo
bcthoipere
AM
P
40V
D4
 pATE

10K ae 10K

+SV
40k
tV-
SV-
ZDI
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T-O

-.
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.Siple diode uag piachicaldiode

.I
1k

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I=lq,8mA
Yo-O.2Y,

e S
+12Y
56K
Vo= 2V,

872
OV
47Ks
2 Yo

t20V 2-2K
ae
S I--78
 PACE o
DATE

+10VV

O.2 Ge operorefirse
Ge

22K
Vol 4 eYo2
oV S1 4e

Yo
2-2Ke t2 K

2K
1-2
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+1ov
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sT Yoq.9V

A diode hay leakage

enciEin tenpind
rrenot 10A
1 svame 3btem
icreased by 25 C.

IoCT2)=ToCT)(-T)/h
26mA
 PAGE No.
DATE

Tee
The cutlp voltge o eo chdiode iyO.6
ID O.Sv A Find R, Ra,Ra
+0v
R1022
R2Sig
Sv
R
A
2R2 mA
B
SV

roigop

Aoigid
 PAGE o.
DATE
Speclo Tpe ob Diode

Pointcontactdliode*JD a
F
metad sc unctio
diode mos, 100ear earieFodee

I
A tungtaut oiseisform CateugE wiU be.
forminDaidnction
Since he area b Conact verygme9
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2 semi conuctor, Celecholuminscene)
wtsen LED Spropery excibed, he ugla a
eu ted lange no ob maority clue Lo e combingHoo
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20
b
mA
igar
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Qi
oroafd curyenr. gives more
.oithtensi
t
inten
in

hen
when LeD heatedwp emis dul
Codour
 PAGE No.
DATE

In reverge b)ap, LED 0oY KA oD normaldiode

mV
FornarddhsapaJton
Reapon 6e ti
me-Ubec
operaHo uje-ALacp ore hours t
wten Compa ved
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ihanLcD because bSma ler
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mitter
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os a ugtasource

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dynamic ecatteriogobigia
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devics

oom temp.

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colour LED
2
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FA 48
misught with th o0avelengtl
549o A
5490x1O
22Ve
oLno
 PACE o.
DATE
VaractoC diode

Limeay
Hiahly
ly qroded
dopee
diod@
pt NT
8o 1s T

pinciple C Vn
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e wvalentckh otYaraetorloce
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a
o do nolsewuicooave device
I abe called vaniabe capac tem e / voltcap
Appi diyection
generationFM tortonning sp
L resonantckE
Fine tunning
Sel
o eceiver
bdanim AC bridges
paroumeic aupliier It ba Loo nolse
ww wave
powec amplifier fortisatelu
te
com mu coti0n,
 PAGE No.

DATE

It Uume
isolbeESAKI
Diode
diode o tunnel úp tunneldiode

Rs Ls

t'o P-Nunction diode uoit hugh

Basjcally
dopim.It xhibtehepropertytunnein ebbet
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tayer becaunlobigh dopim
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deple ion, th he epee a mas equal to
layercoi
igat speecdcalledtannelinoebtecta
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s iteh,isusi
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t TEba-veresisme
Advalage} smaller insige eaner to fobrico
loconolce
device erylow ADoina
poaiercopsu pHion'economicao

mallervoltageseoin dihio turo

Disadvantage
i no power inelaHon
temialdevice,8o UhenL section
het bectioDond qe ti

alalk
izo
orie
3baihaNaut
 PAOE Na

OATE

ON sheteohmic
R
Limedr Ne R PonebHl

she
when tuaneldiode t's reverged biaaed,urrent
ts tucay t cheaned o th volfage
Tuunel iedeoil exhibit -ve resictomce
opert waenreveased blased
ve resishmceeyTunnel diode sy due to
taunelimoeAtect,AA
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re.sistomce
sktetrom ON
devicechangesits e
to ottshate

I
utoen forsardvolFage ehengesfaom Vpto V
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I
-fof drom
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D ae
decignin selaxcton osdlaROo.
bea CollymicnOwaveB oseiaHee.
b wed voltaqegennaros
For qood tuune diode Larger Iy raiHo
Laroe vo l
hage swio6;E-Vp
 PAGE No

DATE

Tuunel diode com be abricored eter

th GaAs wth Ge,bc neveroi
vnd t Si
Tunnel dibde exhibi multiteeture
poprby
rEripPplevalA propertyi.eany valneab
caresbet?Ip emd I elan beladheivedwit
treeife La relkaq 12bhaa
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pulatcihcuE or nduatnia ppucobie

t
-ve resistamce dexice
designina winowove osciUatoq2
elarloti
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aia neat evice
nomal diode ao Owe

pueemd seitetaina,device
pCATCapufier
aldo arelamche photo diode

APD
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avalanche
alasays epeaedunde(isbevezge biaomode
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suitch Tmu yerysmaliC75nsc)
APDisaake than normalphotoduode
APp caioms
Piber ophC com
a
eh otdconductiviby
ebbect uoitlhavalanche
aeak don,
 PACE Ho.
DATE

Phototransiston

TE Jc

AenighEeb paope sawelenohHaso-n 6em}

ConductoC hen curren lo os
Te con dueHvity ceviconduchDE uCaAy
o

n photosanssto collecto function is

madephoto sensiHve,
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openakd SLoitr

Advaoqt) W heu tompared tonofmal transis tor,

10tmes oAk
100 timey highsenci
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o pouoer handl na
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ud e ed e epto cDuplec

Llon Deped entResistorCLDR)

e
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ebhect Y oeLo
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during M .s pe cer
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osdelbwaed ptoeoupler

ouots
oto 9
o5
uwnount e
 PAGE No

pto coupler3 ATE

nlt
Lih Liga
sEnSr
LED Pbeto detechD
LASAR Pboto SCR
LDA
isolated opHcalyconhe cted
Elccsicaly
These devicesare faserthan conventiondevices
wide ly used
widey eydussiad aPpucoHon
Tae optocouplercan sovide beterde
i'solaHontaanwe elechon i
A step q1orded iode abe callecas abrusE
PNunctienaiode,i
D
PN
Lo PLN
PNtiddode,dopimgevesane 4erennt
tpesemi conduchei

Logpia ed pt
shep2Yadedddodearefaare han nona diods

TD hc'lstep maded diode depletion

ebiode
laero ilbe postion ightlydoped eqion

fieldtenSity maumuo
Electeic
uncEion NA
Np
LineaT araded U
iode, ptNT becau
b igherField
dopins, ied
stensi tyCaa ve aoill
iy max.ar feinH
be

LThear eptensity
 PADE

Pfeld E4ectTransisLoC
[FET
JFET 4.932
BTT 1947
UT7 1953
MOSEET-1968
Te epevaion ot FET dependo ipon
elechic field à tenci ta poduced t
channel,
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lege,
couh ol|leddevice
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neg ble a ernalpower consamp Hon 0

I
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fabi

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caed
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carrierdevice
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oithicon 6
ony
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eLLrenh

Excelent terma sbitu ty( dnito

nog ty Cortier)
absene

.
Gain bandwdih psoddu
witbLanqer band width
OJJer
beter reproducHo o 8ima
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16mal
alusay coma,

9ain,xtencempared toJT
FET s a better

Aalass
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bmal sige,
oniep uputieng tat
sifiCoH
n eaaie
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o fabhicae
t

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 I
MOS
o 3Eerinoddevice
4 terinq device,s, Saosete
EET
Ouice-oeu tezvina ctai ch "majoriby
PAGE No.

,,
DATE

.
carierenie tt device..
Dii-termma by otich maoriEy cYIer
eaves the deyice,
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 Claan
Claann
nelc osSsecteme
elccy yexh deuaity
wth o depleHe La ec icen etled
ace eCca
PAGE Ho.

OATE

CeAL
,
Ceaed b ascd co
gET aluayse pealdat20NCLSed biaad
magutucde
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 PAGE No.

DATE

B vy1mg Yos md keepingVGs Cat

t2

I Pinch o t
2
vsla3

A bove ciaarei
YSH C nl ierLaIT to Collector
aa c1 et B charch.

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e
FETan be
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m apLiier,
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on, esi
atnes
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e
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can be definedoo
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w Vas uhese LD O
a mummuu volaaeueVA Ioustud

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pinch
umere Vgs= o abo called
manimum Pinchobb volFage
pinchottvelege is
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to ource volFa
Locus b au pinchebbvol tagep ioparabola
DuiD epinchetbt bo Eh Whe de pleti
on ayer

touchenchottaez became ne
woaletoo
lans eld Ates
e ddiau cmd poinHng
od
to
ityDeag
tlbe seur(e.
 PACE No.

DATE

botly
u ceesimg tbe lsa)n veteae les
pletteLae
cnd cban n el
abm ng ex FeLwe
pinch obt
ep Cbser
er

Te clhanneliexb.ama.ted uppy Ing,Cag

LDe Tpss
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FET s aequane auodevjce
p
Tn JFET de eaav oo pae seG Vau CUHoy
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beca
wndei
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e paasiLG e
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chhau vne

ID i oJunction oy VGs,Yos
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