Maharashtra State Board of Technical

Education, Mumbai.
Government Polytechnic, Dharashiv.
-----------------------------------------------------------------------------------------------------------------------------------------------------------------------------

Diploma in Electronics & Telecommunication Engineering.

Academic Year : 2024 – 25.
A
Micro Project Report
On :-

“Performance of IGBT”

Submitted By -
Roll Enrollment Name of Student
No. No.
06. 23510250501 Badule Indrajit Irappa
11. 23510250508 Birajdar Basavraj Tukaram
18. 23510250517 Deshpande Gaurav Suhas
30. 23510250530 Gote Sanskar Sachin
34. 23510250535 Jadhav Ganesh Shamrao

ELECTRONICS & TELECOMMUNICATION ENGINEERIG.

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 CERTIFICATE
Certified that this Micro Project Report

“Performance of IGBT”
Is the work of

Roll Enrollment Name of Student Signature

No. No.
06. 23510250501 Badule Indrajit Irappa
11. 23510250508 Birajdar Basavraj Tukaram
18. 23510250517 Deshpande Gaurav Suhas
30. 23510250530 Gote Sanskar Sachin
34. 23510250535 Jadhav Ganesh Shamrao
The students of Semester : Fourth.
Subject Name :- Basic Power Electronics ( BPE – 314363 ) of Diploma in
Electronics and Telecommunication Engineering 2024 -25.
This report is partial fulfillment for the award of the Micro Project,
Diploma in Electronics and Telecommunication Engineering by MSBTE,
Mumbai.
Guide Name :- Mr. Udchan B. S.
Date & Sign :-

S. R. Panke S. L. Andhare
HOD PRINCIPAL

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 INDEX
Sr. Title Page no.
No.
1. Introduction 04
2. Construction 05
3. Working principle 07
4. IGBT characteristics 08
5. Factors affecting IGBT 10
performance
6. Advantages 11
7. Disadvantages 12
8. Applications 13
9. Conclusion 14
10. References 15

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 INTRODUCTION
The Insulated Gate Bipolar Transistor (IGBT) is a power semiconductor
device that combines the advantages of Metal-Oxide-Semiconductor Field-
Effect Transistor (MOSFET) and Bipolar Junction Transistor (BJT). It is
widely used in power electronics applications due to its high efficiency, fast
switching, and capability to handle high voltage and current levels.
This combination allows IGBT to handle high voltage and current levels
while maintaining efficient switching. The symbol of an IGBT reflects its dual
nature, with elements resembling both MOSFET and BJT symbols. It's important
to note that IGBT has largely replaced power BJT in many high-power
applications due to its superior performance characteristics. IGBT offers the best
of both the MOSFET and BJT worlds, making them a crucial component in
various power electronic applications. Their ability to switch high currents
efficiently while maintaining fast switching times has made them essential in
modern electronics.

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CONSTRUCTION

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 The IGBT combines the input characteristics of a MOSFET with the output
characteristics of a BJT, resembling the structure of an N-channel MOSFET and
a PNP BJT in Darlington configuration. Additionally, the resistance of the drift
region can be integrated. In terms of the IGBT's structure, there are multiple
current paths. The primary path is from the collector to the emitter, involving the
sequence: "collector, P+ substrate, N-, P, emitter," which aligns with the PNP
transistor equivalent. There's also a secondary path: "collector, P+ substrate, N-,
P, N+, emitter," which necessitates the inclusion of another NPN transistor, as
illustrated in the figure below.
The IGBT consists of four semiconductor layers arranged to create a P-N-
P-N structure. The collector (C) electrode connects to the P layer, while the
emitter (E) is positioned between the P and N layers. Construction employs a P+
substrate, with an N- layer atop it is forming PN junction J1. Two P regions are
crafted on the N- layer, creating PN junction J2. The gate (G) electrode is
positioned within a gap in the middle of the P region. Metal electrodes serve as
the emitter and gate, with the emitter directly connected to the N+ region and the
gate insulated by a silicon dioxide layer. The P+ layer, referred to as the injector
layer, injects holes into the N- layer, while the N- layer itself is called the drift
region, with its thickness proportional to voltage-blocking capacity.
The upper P layer is known as the body of the IGBT. The N- layer is
designed to establish a current path between the emitter and collector, utilizing a
channel formed beneath the influence of the voltage applied to the gate electrode.
The N- layer is strategically designed to provide a path for the current to flow
between the emitter and collector. This current path is influenced and controlled
by the voltage applied to the gate electrode. By varying this voltage, the IGBT
can regulate the flow of current through the device, making it an essential
component in various power electronics applications.

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 WORKING PRINCIPLE
IGBT has three terminals collector (C), emitter (E) and gate (G).
These terminals serve distinct roles in controlling current flow through
the device, collector and emitter are related to the conductance path
whereas the gate terminal is responsible for the controlling of the device
and IGBT Operation. In the operation of an IGBT, the collector-emitter
connection is established with the collector at a positive voltage
compared to the emitter. These forward biases junction J1 and reverse
biases junction J2.
Notably, there is no voltage applied to the gate at this stage. Due to
the reverse bias at J2, the IGBT remains in the off state, preventing any
current flow between the collector and emitter. When a positive gate
voltage (VG) is applied relative to the emitter, negative charges
accumulate beneath the SiO2 layer due to capacitance. As VG increases,
more charges accumulate, forming a layer in the upper P-region when
VG exceeds the threshold voltage.
This layer effectively creates an N-channel that connects the N-
drift region and N+ region. Electrons from the emitter then flow from
the N+ region into the N- drift region, while holes from the collector are
injected from the P+ region into the N- drift region. The excess of both
electrons and holes in the drift region enhances its conductivity, enabling
current conduction. Consequently, the IGBT switches on and allows
current to flow between the collector and emitter.
IGBT can be controlled or turn ON or OFF by simply activating
deactivating the gate terminal. As the positive input voltage is applied
then it will turn ON state and as the input voltage goes zero or negative
then it will be turn OFF - also it has low channel resistance which results
in the smooth flow of current in the device.

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 ❖ IGBT Characteristics :-
➢ V – I Characteristics :-
IGBT differ from BJT in that they are voltage-controlled devices requiring
only a small gate voltage, VGE, to regulate collector current, IC. However, the
gate-emitter voltage, VGE, must surpass the threshold voltage, VGET. The
transfer characteristics of IGBT illustrate the relationship between input voltage,
VGE, and output collector current, IC.
• When VGE is 0V, the device remains off with no IC, and when VGE slightly
increases but stays below VGET, it remains off but may exhibit a leakage
current.
• Once VGE surpasses the threshold, IC begins to rise, turning the device on. As
a unidirectional device, current flows in only one direction.
• IGBT characteristic curves, as depicted in the provided graph, demonstrate the
relationship between collector current, IC, and collector-emitter voltage, VCE,
at different VGE levels.
• At VGE < VGET the GBT is in cut-off mode, resulting in IC = 0 at any VCE.
Beyond VGE > VGET, the IGBT enters the active mode, where IC increases
with rising VCE.
Moreover, for each VGE where VGE1 < VGE2 < VGE3, IC differs. It's crucial
not to exceed the reverse voltage or forward voltage beyond their respective
breakdown limits, as this can lead to uncontrolled current flow.

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➢ Transfer Characteristics :-
The transfer characteristics of IGBT shows the graph between the collector
current and gate emitter voltage i.e. between the IC and VGE . The IGBT
remains in the OFF state as the value of the gate emitter voltage is less than
that of the threshold voltage :

VGE < VGET

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FACTORS AFFECTING IGBT PERFORMANCE

➢ Switching Frequency :-
✓ Higher frequencies lead to increased switching losses.
✓ Trade-off between conduction and switching losses must be
optimized for efficiency.

➢ Gate Drive Circuit :-

✓ Proper gate resistance (Rg) selection ensures controlled switching
behavior.
✓ Insufficient gate drive voltage may cause slow switching and higher
losses.

➢ Temperature Effects :-
✓ Higher temperatures degrade IGBT performance by increasing
VCE(sat) and reducing current-carrying capability.
✓ Thermal runaway can occur if not properly managed.

➢ Parasitic Elements :-
✓ Miller capacitance affects gate control and switching speed.
✓ Stray inductances in the circuit cause voltage overshoots and
ringing, leading to EMI and reliability issues.

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 ADVANTAGES

• Safe Operating device.

• Cost efficient driver circuits.
• IGBTs are smaller in size, easy to handle.
• Highly efficient voltage controlled devices.
• Higher Output Impedance.
• Low switching loss and power loss.
• Less voltage drop.

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 DISADVANTAGES

• IGBTs cannot stop the flow of high reverse voltages.

no secondary breakdown for these transistors.
• Cost effective.
• Low switching speed when compared to other
transistors.
• Low input impedance.
• Switching frequency of IGBTs up to 50KHz less
than BJT and MOSFET.

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 APPLICATIONS
o Industrial motor drives (AC and DC drives).
o Renewable energy systems (solar inverters, wind turbines).
o Electric vehicles (EVs) and hybrid vehicles (traction inverters).
o Power transmission (HVDC systems).
o Welding and induction heating systems.
o Unregulated Power Supply (UPS)
o Switch Mode Power Supplies (SMPS)
o Traction motor control
o Induction heating
o Inverters
o They are designed to combine an isolated-gate FET for control
input and a bipolar power transistor into a single device, enhancing
versatility.

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 CONCLUSION
IGBT are essential in a wide range of applications due to
their versatility. They perform critical functions like regulating
voltage and current, controlling motors, powering devices,
supporting renewable energy systems, and enabling electric
vehicle propulsion systems. In the context of voltage and current
regulation, IGBT are vital for ensuring a consistent and
controlled supply of power. Their capability to handle high
voltages and currents makes them well-suited for applications
demanding precision, such as industrial automation and grid-
connected systems.
Basically it is a switching device which is control like the
MOSFET but it has the output characteristics similar to that of
BJT. It is used in power amplifier and other switching devices
and its operation is not so complex, just depends on the input
terminal voltage to turn it ON and negative or zero input voltage
to turn it OFF. IGBT is free from the second breakdown problem
which usually occurs in the BJT.

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 REFERENCES
o Techknowledge Publications – Basic Power Electronics.
o https://chatgpt,com,
o www.slideshare.net.
o https://openai.com.
o www.scribd.com.

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