RLab-ECE322L 3

ECE 322L

Team Name:

Semester and year: Spring 2025

FEBRUARY 17, 2025

Table of Contents
Introduction.................................................................................................................................................................. 2
Part1 – Hypothesis..................................................................................................................................................... 2
Hypothesis................................................................................................................................................................ 2
Background.............................................................................................................................................................. 3
Hand Calculation.................................................................................................................................................... 4
Simulation................................................................................................................................................................. 7
Part 2: Plan the experiment.................................................................................................................................11
Part3 – Build and characterize the circuit.....................................................................................................11
Part4- Analyze and discuss the results...........................................................................................................13
Conclusion................................................................................................................................................................... 15

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 Date of Experiment: February 9,2025

Team Members:

Title: Analysis of AC Behavior of MOSFET

Amplifier

Introduction

The main objective of this lab is to analyze the AC behavior of a MOSFET amplifier in both
common-source and common-drain configurations. We aim to verify the theoretical
calculations through DC and AC simulations, determine the voltage gain for both
configurations and then compare the results with hand calculations and experimental
results.

Part1 – Hypothesis

Hypothesis
In this experiment we will analyze the AC behavior of a MOSFET amplifier in two
configurations, common-Source and common-Drain.

1. Behavior of Common-Source Configuration

The Common-Source CS configuration is a voltage amplifier known for providing high

voltage gain with phase inversion. The gain is primarily determined by the transistor's
transconductance gm and the drain resistor RD. The theoretical voltage gain Av of a CS
amplifier is given by,

A v =−gm RD

Where gm is found as,

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 √
gm = 2 K ' n ( WL ) I DQ

The CS amplifier introduces a 180° phase shift between the input and output signals. As the
input voltage at the gate increases, the MOSFET conducts more, causing the output voltage
at the drain to decrease (inversion). The gain is typically high, depending on RD and gm.
However, the gain may reduce at high frequencies due to the parasitic capacitances Cgs,
Cgd. The Common-Source amplifier will exhibit a high voltage gain with a phase inversion of
approximately 180°, and the measured gain will closely match the value predicted by hand
calculations and simulations.

2. Behavior of Common-Drain Configuration

The Common-Drain (CD) configuration, also called a Source-Follower, is a voltage buffer

known for having a voltage gain slightly less than 1 but providing a high input impedance
and low output impedance, making it suitable for impedance matching.
The theoretical gain of a CD amplifier is given by,

gm RS
A v=
1+ g m R S

The CD amplifier has no phase inversion; the output is in-phase with the input. The output
voltage follows the input voltage closely, differing only by the gate-to-source voltage drop
VGS. The gain is approximately 0.95 to 0.99. The slight loss is due to the internal transistor
characteristics and source degeneration. The Common-Drain amplifier will have a voltage
gain slightly less than 1 and will produce an output that is in-phase with the input, with a
minimal drop caused by the gate-to-source voltage difference. The experimental gain should
loosely match the predicted values from hand calculations and simulations.

Background
In this experiment, we study the AC behavior of a MOSFET amplifier using two
configurations: Common-Source CS and Common-Drain CD or Source-Follower. These
configurations are fundamental in analog electronics for signal amplification and buffering.

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  The Common-Source CS amplifier provides high voltage gain with a 180° phase shift,
making it suitable for signal amplification. The gain primarily depends on the
transconductance gm of the MOSFET and the drain resistor RD.

 The Common-Drain CD amplifier, also known as a Source-Follower, provides a

voltage gain close to 1 (unity gain) without phase inversion. It is commonly used for
impedance matching, offering high input impedance and low output impedance.

The experiment involves hand calculations, simulations, and experimental measurements of

gain for both configurations. The results will be compared to understand the differences in
gain, phase shift, and behavior under AC conditions.

Hand Calculation

Figure 1 Circuit Diagram

Given Circuit Parameters

Supply Voltage (Vdd) = 12V

Drain Resistor (Rd) = 6.8kΩ
Source Resistor (Rs) = 560Ω

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Threshold Voltage (VTN) = 1V
Transconductance Parameter (Kn) = 1.825 mA/V²

W/L = 1

I DQ =790 μA

R1 + R2=200 k

Step 1: Determine the Drain Current ID Since required drain voltage is 6V that applied
Kirchhoff's Voltage Law KVL,

V D=V DD−I D R 3

V D=12 V −( 790 μA )( 6.8 kΩ )

V D=6.628 V

Step 2: Determine the Gate-Source Voltage ( V GS ) The MOSFET is in saturation so:

√ 2∗790 μA
1.825 mA / V 2
=V GS−1 V

0.9304=V GS −1V

V GS=1.9304 V

Step 3: Determine the Gate Voltage VG Since:

Also,

V S =I D∗RS

V S =790 μA∗560

V S =0.4424 V

NOW,

V GS=V G−V S

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 V G =V GS +V S

V G =1.9304+0.4424

V G =2.3728 V

V DD∗R 2
V G=
R 1+ R 2

S0,

12∗R2
2.3728=
200 k

Solving for R2,

R2=39.546 kΩ

So,

R1=200 k−39.546 k

R1=160.454 kΩ

Also,

V DS=V D−V S

V DS=6.628−0.4424

V DS=6.1856 V

Now,

2I D
gm =
V GS −V TN

−6
2∗790∗10
gm =
1.9304−1

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 gm =1.698 mS

Common source voltage gain:

A v =−gm∗R D

A v =−11.5464

Common drain voltage gain:

gm RS
A v=
1+ g m R S

−3
1.698∗10 ∗560
A v= −3
1+1.698∗10 ∗560

A v =0.4874

Simulation

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Figure 2 Circuit schematic on Multisim

Figure 3 Running simulation in DC mode

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Figure 4 Schematics made for AC mode

Figure 5 Simulation run for AC mode

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 Figure 6 Frequency simulation

Figure 7 Output taken for common drain at 5V input

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 Figure 8 Output taken for common source configuration at 5V input

Part 2: Plan the experiment

List of Required Equipment and Components:

 MOSFET (BS170)

 Power supply (Vdd = 12V)

 Function generator (High Z, f=1kHz)

 Oscilloscope

 Multimeter

 Resistors: RD=6.8kΩ, RS=560Ω, R1+R2=200kΩ

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List of Tasks:

1. Measure resistance values.

2. Determine the Q-point of the transistor.

3. Configure the circuit for input-output characterization.

4. Measure voltage gain for both configurations.

5. Record raw data and observations.

Team Member Roles:

Timeline:

Part3 – Build and characterize the circuit

Experimental Setup and Circuit Description:

Set up the MOSFET amplifier for both configurations:

 Common-Source (CS): Measure output from the drain.

 Common-Drain (CD): Measure output from the source.

Procedure

 Measured IDQI_{DQ}IDQ and VGSV_{GS}VGS using the multimeter.

 Verified the transistor operates in the saturation region.
 Connected the input from the function generator to the gate.
 Measured the output from the drain.
 Observed a phase-inverted waveform on the oscilloscope.

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 Measured the output from the source.
 Observed an in-phase waveform on the oscilloscope.
 Applied a 1 kHz sine wave from the function generator.
 Recorded the input and output peak-to-peak voltages (Vpp).
 Calculated the gain using,

V out
A v=
V¿

Figure 9 The circuit patched on bread board

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 Figure 10 The waveforms observed on oscilloscope

Figure 11 Voltage measurements

Part4- Analyze and discuss the results

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The table below summarizes the gain results from hand calculations, simulations, and
experimental measurements for both configurations:

Configuration Hand Simulation Experimental Phase Shift

Calculations (Multisim) Measurements

Common- -11.5464 -10.1 180°

Source (CS) (Inverted)

Common-Drain 0.4874 0.4874 0° (In-

(CD) phase)

Common-Source (CS):

The measured gain closely matches the theoretical and simulated values. The slight
deviation is due to parasitic capacitances and instrumental errors. The output waveform is
inverted and shows a higher amplitude, confirming high gain with phase inversion.

Common-Drain (CD):

The gain is very close to unity as expected thus confirming the buffering behavior. The small
drop is due to the gate-to-source voltage V GS. The output waveform follows the input, with a
slight drop due to VGS, showing a gain of approximately 0.4874.

Deviations

Cause Impact on Results

Component Tolerances Slight gain variation due to resistor and MOSFET differences.

Parasitic Capacitances Minor distortion in CS gain especially at higher frequencies.

Measurement Errors Slight differences in peak-to-peak voltages on the

oscilloscope.

Breadboard Additional stray capacitances causing small deviations.

Connections

In CS Configuration slight distortion at higher input amplitudes due to clipping i.e, output
saturating at power supply limits. In CD Configuration there is minimal distortion, but a
small drop due to VGS loss. Simulations showed ideal behavior with negligible losses.
Experimental results had minor deviations due to real-world non-idealities such as internal
MOSFET resistance and cable losses. The observed phase shift in CS and unity gain in CD
matched theoretical predictions, validating the MOSFET amplifier models.

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Conclusion

The experiment had been successfully performed and the behavior of the MOSFET BS170
under common source and common drain configurations is observed. The results of the
hand calculations, simulations and experimental results differ with small values. The
common source configuration provided a high voltage gain with a 180° phase shift thus
confirming its role as a voltage amplifier. The experimental gain was slightly lower than
theoretical values due to component tolerances and parasitic effects but the results closely
aligned with simulations. The Common-Drain configuration produced a voltage gain close to
unity 0.4874 with an in-phase output confirming its function as a voltage buffer for
impedance matching. The small drop from unity gain was due to the gate-to-source voltage
drop VGS. The phase relationships and gain values matched theoretical predictions and the
small differences were dedicated to real-world non-idealities such as measurement errors
breadboard parasitic capacitances and component tolerances.

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