American International University- Bangladesh (AIUB)

Department of Electrical and Electronic Engineering

EEE 2104: Electronic Devices Lab Group #
02
Course Name: Electronic Devices Lab Course Code: EEE 2104
Semester: Fall 2024-2025 Term: Final
Faculty: Ms. Sadia Yasmin Section: Z

Study Of Common Source Enhancement type MOSFET Based Amplifier Circuit

OEL Title:
with Different Loads

SL Student ID # Student Name Obtained Marks

1. 23-54986-3 M.Sakib Sadman Arian
2. 23-54985-3 Jarin Tasnim
3. 23-54884-3 Md Tahsin Ur Rahman
4. 23-54988-3 Asmaul Husna
5. 22-47262-1 Salman Arefin

Assessment Materials and Marks Allocation:

Assessment
COs CO Statement POIs Marks
Materials
Analyze and justify the experimental and simulated outcome using modern Open-Ended
CO1 engineering tool (MULTISIM/ PSIM) to reach substantiated conclusion Laboratory P.d.2.C4 10
such as performance of amplifier circuit, recognizing the constraints. Report

Assessment Rubrics:
No
COs- Excellent Proficient Good Acceptable Unacceptable Secure
Response
POIs [10-9] [8-7] [6-5] [4-3] [2-1] d Ma
[0]

The OEL is
The OEL is The OEL is not
The OEL is developed developed by The OEL is
developed by developed by
by investigating investigating developed by No
investigating a good investigating
varieties number of some research investigating a few Response at
amount of research research literature
research literature literature related research literatures all/copied
literature related to related to
related to electronic to electronic related to electronic from
electronic devices electronic devices
devices and circuits. devices and devices and others/
CO1 and circuits. The and circuits. The
The simulation and circuits. The circuits. The identical
P.d.2.C4 simulation and simulation and
implementation simulation and simulation and submission
implementation implementation
processes are clearly implementation implementation s with gross
processes are clearly processes are not
demonstrated processes are processes are errors/imag
demonstrated with demonstrated with
combining all input demonstrated with demonstrated with e file
some outcomes and any outcomes and
patterns with several some outcomes a few patterns or printed
limited input not for any
practical outcomes. and some input outcomes.
patterns. pattern.
patterns.
Comment
Total marks (10)
s
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Experiment title :
Study Of Common Source Enhancement type MOSFET Based Amplifier Circuit
with Different Loads

Theory:
Designing a common source E-MOSFET amplifier circuit and analyze the gain with
varying the loads. The Metal-Oxide-Semiconductor Field-Effect Transistor
(MOSFET) is a key component in modern electronic circuits due to its ability to
amplify signals with high efficiency and minimal distortion. A MOSFET operates in
three regions: cutoff, triode, and saturation. For amplifier applications, the MOSFET
is typically biased to operate in the saturation region, where it exhibits a nearly constant
drain current for a given gate-to-source voltage (VGS). In a common source
configuration, the input signal is applied to the gate, the output is taken from the drain,
and the source is connected to ground.

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3|Page
4|Page
Methodology:

1. Conduct a literature review on MOSFET operation and amplifier design.

2. Design the Common Source E-MOSFET amplifier circuit with specified
components.
3. Assemble the circuit on a breadboard using the given apparatus.
4. Provide input signals using a function generator and power the circuit with a
10V DC source.
5. Measure the output voltage and voltage gain (Av) for different load resistances
using an oscilloscope.
6. Simulate the circuit using software like Multisim with identical parameters.
7. Compare experimental and simulated results to analyze performance.
8. Discuss findings, limitations, and propose solutions for improvement.

Apparatus:

Components Required:
N-channel E-MOSFET: 2N7000 or IRF540
Drain Resistor (Rd): R2 = 5.5 kΩ
Gate Resistor (Rg): R1 = 1 MΩ
Load Resistor (R3): 10 kΩ
Capacitor C1,C2: 22 µF
DC Voltage Source V1: 10V
Function Generator: 1
Oscilloscope: 1
Multimeter: 1
Breadboard: 1
Connecting Wires: Sufficient
Precaution:

1. MOSFET should never be removed or inserted into a circuit while voltage is

applied.
2. It should be ensured that a replacement MOSFET is inserted into a circuit in the
correct direction.
3. The device leads should be kept in contact with the conductive foam, or a
shorting ring should be connected around the table when storing the MOSFET
4. The applied voltage and current must not exceed the maximum rating of the given
MOSFET.

5|Page
Experimental Procedure:
1. The actual values of the gate and drain resistors are measured.
2. A sinusoidal AC signal of 10 kHz with a 10 mV peak value is applied and the
drain supply voltage VDD is set to 10 V.
3. The input and output signals are observed on the oscilloscope screen in DUAL
mode.
4. An AC signal below the maximum signal-handling capacity of the amplifier is
applied. The input signal frequency is fixed at 10 kHz. The input and output
voltage waveforms are plotted, and the voltage gain (Av) is calculated.
5. From the waveform’s we find the input output peak value. Ensuring the output
is amplified.
6. A potentiometer (0–15 kΩ) is connected as the load resistor. The
potentiometer knob is adjusted, and the output voltages are measured for each
resistance value and the voltage gain (AV) of the amplifier is calculated.
7. The voltage gain (Av) of the amplifier circuit is computed in decibels (𝐴𝑉,𝑑𝐵
=20logAv).
8. Images of the hardware setup, simulation circuit diagrams, and various
waveforms are recorded.
9. The DC power supply, function generator, and oscilloscope are switched off.

Circuit diagram :

6|Page
Experimental Set-Up:

Figure 1: Implementation of hardware circuit.

Figure 2: Experimental Data.

7|Page
Simulation Set-Up:

8|Page
9|Page
Data Table:
Table: Simulated Data
Gain,
Load Resistor, Input voltage, Output Voltage, 𝑉𝑜𝑢𝑡 Gain in dB
RL (k) Vi (mV) Vo (mV) 𝐴𝑣 = 𝐴𝑉,𝑑𝐵 = 20𝑙𝑜𝑔𝐴𝑉
𝑉𝑖𝑛 10

2 19.993 466.327 23.324 27.356

19.981 736.037 36.836 31.325
4
19.957 911.540 45.675 33.193
6
19.853 1034 52.082 34.333
8
19.956 1126 56.424 35.029
10
19.957 1276 63.937 36.115
15

Discussion and Conclusion :

This experiment focused on designing and testing a common source E-MOSFET amplifier to study
how the load resistance affects its gain. The results showed that as the load resistance (RL) increased,
the voltage gain (Av) also increased. For example, when RL changed from 2 kΩ to 15 kΩ, the gain
increased from 23.32 to 63.94, and the gain in decibels rose from 27.36 to 36.12 .
The amplifier worked correctly because the MOSFET was properly biased to stay in the saturation
region. This ensured the input signal was amplified without distortion. The experiment also showed
how the load resistance plays an important role in controlling the gain of the amplifier.
In conclusion, this study helped us understand how to design and optimize a MOSFET amplifier. We
learned that increasing the load resistance improves the gain, but we must also consider the practical
limits of the circuit.

References:
[1] Robert L. Boylestad, Louis Nashelsky, Electronic Devices and Circuit Theory, 9th Edition, 2007-2008
[2] Adel S. Sedra, Kenneth C. Smith, Microelectronic Circuits, Saunders College Publishing,
3rd ed., ISBN: 0-03- 051648-X, 1991.
[3] American International University–Bangladesh (AIUB) Electronic Devices Lab Manual.
[4] David J. Comer, Donald T. Comer, Fundamentals of Electronic Circuit Design, John Wiley &
Sons Canada, Ltd., ISBN: 0471410160, 2002.
[5] J. Keown, ORCAD PSpice and Circuit Analysis, Prentice Hall Press (2001)
[6] Resistor values: https://www.eleccircuit.com/how-to-basic-use-resistor/, accessed on 20 September
2023.

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