American International University- Bangladesh

Faculty of Science and Technology (FST)

Section: Z, Group: 02

LAB REPORT - 01

Determination of Characteristic Curve of a Diode

Submitted by
Name ID Contribution
1. M.Sakib Sadman Arian 23-54986-3 Abstract,Data table & Graph
2. Jarin Tasnim 23-54985-3 Experimental Procedure & Conclusion
3. Md Tahsin Ur Rahman 23-54884-3 Simulation & Analysis
4. Asmaul Husna 23-54988-3 Theory & Calculations.
5. Salman Arefin 22-47262-1 Experimental Data

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Abstract:
The aim of this lab is to understand the behavior and characteristics of a diode by examining its current-voltage (I-V)
relationship in forward bias. Diodes are essential components in electronic circuits, as they control current flow in
one direction. In this experiment, we aim to plot the diode’s forward-bias characteristic curve by gradually applying
voltage and measuring the resulting current.
Using a DC power supply, we will increase the voltage across the diode in small steps, recording the voltage and
corresponding current to observe how the diode's resistance changes with voltage. We will identify key points, such
as the cut-in voltage, where the diode begins to conduct. This experiment provides a hands-on understanding of the
diode’s behavior in forward bias, illustrating its role in circuit design and its response to varying electrical conditions.

Theory:
Diode Structure
The semiconductor diode is created by simply joining an n-type and a p-type material together. It is a pn junction as
shown in Figure 1. As indicated, the pn junction consists of p-type semiconductor material in contact with n- type
semiconductor material.

Figure 1: pn junction diode structure

A variety of semiconductor materials can be used to form pn junctions like silicon, germanium, gallium arsenide,
etc. However, we will concentrate on silicon, as this is the most widely used material in microelectronics. In actual
practice, both the p and n regions are part of the same silicon crystal. The pn junction is formed by creating regions
of different doping (p and n regions) within a single piece of silicon. The material is doped by bringing in
additional atoms (impurities). The impurities can be either donors or acceptors atoms. The words acceptor and
donor can be associated with donating and accepting electrons.

PN Junction
To understand how a pn junction is formed we will start by imagining two separate pieces of semiconductor, one
n-type and the other p-type as shown in Figure 2 (a). Now, we bring the two pieces together to make one piece of
semiconductor. This results in the formation of a pn junction (Figure 2 (b)).

Figure 2: a) separate pieces of p and n materials, b) pn junction.

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 Forward/Reverse-Bias Characteristics
If a negative voltage is applied to the pn junction, the diode is reverse-biased. In response, free holes and electrons
are pulled towards the end of the crystal and away from the junction. The result is that all available carriers are
attracted away from the junction, and the depletion region is extended. There is no current flow through under
such conditions. If the applied voltage is positive, the diode operates in forward bias. This has the effect of
shrinking the depletion region. Now, electrons in the p-type end are attracted to the positive applied voltage, while
holes in the n-type end are attracted to the negative applied voltage.

Diode Characteristics
In the forward bias condition, a cut-in voltage must be overcome for the diode to start conduction. In silicon, this
voltage is about 0.6-0.7 V. In reverse-bias conditions, the current is limited to IS (reverse saturation current). For
higher values of reverse voltages, the junction breaks down. Figure 3 shows the diode I-V characteristics.

Figure 3: Diode IV Characteristics.

Methodology:
The diode will be forward biased from a DC voltage source, starting from 0 V to 1 V in a step of 0.1 V and then
1 V to 10 V in a step of 1 V. The diode voltage and resistor voltage drops will be measured using a multimeter.
If the resistor voltage drop is divided by the resistance of that resistor, then we will get the diode current. Then, a
forward-biased diode curve will be plotted. From this curve, the dynamic resistance of the diode can be obtained.

Equations Required: 𝚐𝑉𝑑

1 𝑑𝐼𝑑 ∆𝐼𝑑
The slope of the forward curve gives the diode conductance, 𝑔 = = 𝑡𝑎𝑛𝜃 = =
𝑑 𝑟𝑑 𝑑𝑉𝑑 ∆𝑉𝑑
The diode’s dynamic resistance, 𝑟 = 𝑑𝑉𝑑
=
∆𝑉𝑑

𝑑 𝑑𝐼𝑑 ∆𝐼𝑑
𝑉𝑑
The diode’s static resistance, 𝑟𝑠 = (for any given point)
𝐼𝑑

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 Apparatus:
SL Apparatus Quantity

1 Diode 1

2 Resistance (1 k ) 1

3 Project Board 1
4 DC Power Supply 1

5 Multimeter 1

Precaution:
The following are some special safety precautions to be taken into consideration when working with diodes:
1. A diode should never be removed or inserted into a circuit with voltage applied.
2. When testing a diode, it should be ensured that the test voltage does not exceed the diode's:
a. Maximum allowable voltage.
b. It should be ensured that a replacement diode is inserted into the circuit in the correct direction.

Experimental Procedures:
1.The actual value of the 10 k resistor should be measured.
2. The circuit should be connected as shown in Figure 4.

R = 10

Figure 4: Circuit diagram for determining diode characteristics.

3. The DC power supply should be turned on with the voltage control knob set to 0 V.
4. The voltage control knob should be rotated gradually from 0 V to 10 V in steps of 0.1 V and 1 V as shown in
the Table 1.
5. The voltage across the two terminals of the supply voltage, diode, and resistor should be measured for all cases.
6. The measured data should be recorded in Table 1.
7. The power supply should be turned off.
8. The drain current (Id) should be calculated and Table 1 should be fill up.
9.The VD - Id characteristic curve for the diode should be plotted.
10.The knee voltage and static and dynamic resistance of the diode should be determined.

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 Table 1 Data for the Experimental Values
Source Voltage, Es Diode Voltage, VD Resistor Voltage, VR Diode Current, Id
(V) (V) (V) (mA)
0 0 0 0

0.1 0.0812 0.0009 0.00009

0.2 0.1591 0.0038 0.00038

0.3 0.269 0.0222 0.00222

0.4 0.32 0.0523 0.00523

0.5 0.346 0.076 0.0076

0.6 0.378 0.141 0.0141

0.7 0.407 0.265 0.0265

0.8 0.415 0.312 0.0312

0.9 0.428 0.145 0.0415

1 0.439 0.522 0.0522

2 0.489 1.503 0.1503

3 0.51 2.47 0.247

4 0.53 3.41 0.341

5 0.54 4.48 0.448

6 0.55 5.41 0.541

7 0.56 6.45 0.645

8 0.57 7.38 0.738

9 0.58 8.35 0.835

10 0.58 9.35 0.935

11 0.59 10.42 1.042

12 0.59 11.4 1.14

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Characteristic Curve using Experimental Data :

Simulation and Measurement:

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 Table 2 Data For The Simulated Values

0 0 0 0
0.1 0.056854 0.043146 0.004
0.2 0.101693 0.098307 0.009
0.3 0.137349 0.162651 0.016
0.4 0.166286 0.233714 0.023
0.5 0.190308 0.309692 0.03
0.6 0.210699 0.389301 0.038
0.7 0.22825 0.47175 0.047
0.8 0.243656 0.556344 0.055
0.9 0.257355 0.642645 0.064
1 0.269628 0.730372 0.073
2 0.350111 1.65 0.165
3 0.396326 2.604 0.261
4 0.428643 3.571 0.357
5 0.453449 4.547 0.454
6 0.473561 5.526 0.552
7 0.490466 6.51 0.651
8 0.505041 7.495 0.749
9 0.517848 8.48 0.848
10 0.529269 9.471 0.947
11 0.539572 10.46 1.046
12 0.548957 11.451 1.145

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 Characteristic Curve using simulated data:

Discussion:
In this experiment, we studied the I-V characteristics of a diode by gradually applying voltage in forward bias. We
observed that the diode only started conducting after reaching a certain “cut-in” voltage, confirming its
unidirectional conduction behavior.

Our experimental results showed slight deviations from the ideal I-V curve due to practical factors like internal
resistance, temperature fluctuations, and mechanical inaccuracies. These factors impacted the diode's real-world
performance, causing some variation from the expected ideal curve seen in simulations. Nonetheless, we gained
valuable insights into the forward-bias behavior of the diode and the influence of practical conditions on its
performance.

Conclusion:
Through this lab, we successfully achieved our goal of studying the I-V characteristics of a diode. We learned how
a diode responds to different voltage levels and how it controls current flow based on the bias applied. The
experiment provided insight into the diode’s essential role in circuits, especially in directing current flow. This
understanding is valuable for applying diodes in real-life electronic designs, such as rectifiers and signal limiters.

References:
[1] Robert L. Boylestad, Louis Nashelsky, Electronic Devices and Circuit Theory, 9th Edition, 2007-2008
[2] Adel S. Sedra, Kenneth C. Smith, Microelectronic Circuits, Saunders College Publishing, 3rd ed., ISBN: 0-03-
051648-X, 1991.
[3] American International University–Bangladesh (AIUB) Electronic Devices Lab Manual

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