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İzmir Katip Çelebi University Department of Electrical and Electronics Engineering EEE204 Electronics Laboratory

The document outlines a preliminary work assignment for an electronics laboratory course at İzmir Katip Çelebi University, focusing on the Common Base and Common Collector configurations of bipolar junction transistors (BJTs). Students are required to conduct simulations, prepare reports with results and schematics, and submit their findings by a specified deadline. Key tasks include testing BJTs, analyzing input and output characteristics, and understanding voltage and current gains in different configurations.

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18 views11 pages

İzmir Katip Çelebi University Department of Electrical and Electronics Engineering EEE204 Electronics Laboratory

The document outlines a preliminary work assignment for an electronics laboratory course at İzmir Katip Çelebi University, focusing on the Common Base and Common Collector configurations of bipolar junction transistors (BJTs). Students are required to conduct simulations, prepare reports with results and schematics, and submit their findings by a specified deadline. Key tasks include testing BJTs, analyzing input and output characteristics, and understanding voltage and current gains in different configurations.

Uploaded by

mer4canuludag
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
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Download as PDF, TXT or read online on Scribd
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İzmir Katip Çelebi University

Department of Electrical and Electronics Engineering EEE204


Electronics Laboratory
Spring 2023 - 2024Spring 2020
Preliminary Work V
Common Base and Common Collector Configuration
In this preliminary work, properties of Common Base and Common Collector configuration for
bipolar junction transitors will be investigated.
Pre-Lab Report o Please study related topics in
reference notes.
o Prepare report with simulation results and schematics.
o Submit your report until April 21, 23:59 to CANVAS and mail to research assistants’
address.
o Submit your preliminary report individually.
References o

Lecture notes
o Neamen, “Microelectronics Circuit Analysis and Design,” Chapter 5.1, 5.2, 5,3
Questions
1. Explain how you can test a BJT whether it is defected or not. Also propose a method to
determine the type of the BJT (NPN or PNP).
Answer: Testing a Bipolar Junction Transistor (BJT) for defects and determining its type
(NPN or PNP) involves several methods. Firstly, visually inspect the transistor for
physical damage. Then, utilize a multimeter in diode test mode to check the diode
junctions, ensuring proper forward voltage drops for NPN and PNP transistors. Measure
the DC current gain (\(h_{FE}\)) and resistance between terminals to assess functionality.
To determine the transistor type, perform diode tests between the base and other terminals,
identifying forward-biased junctions for NPN and PNP transistors accordingly. Always
consult the datasheet for specific characteristics and test conditions. If a transistor fails
these tests, it is likely defective and should be replaced.
Common-Base Configuration
2. Draw the input characteristics curve (𝐼𝐸 − 𝑉𝐵𝐸) for a typical transistor taking three
different VCE values.

3. Draw the output characteristics curve (IC-VCB) for a typical transistor taking three different
emitter currents. Indicate the cut off, active and saturation regions on the curve.

4. Define the input and output impedance formulas for common-base configuration.
Determine which one is higher.
Answer: In a common-base configuration, it's generally accepted that the input impedance
Zin is higher than the output impedance Zout. This is because the emitter-base junction is
reverse-biased, resulting in a high impedance. On the other hand, the output impedance is
typically lower because the collector-emitter junction is forward-biased, leading to a lower
impedance. Therefore, Zin is higher than Zout.
5. Consider the circuit of Figure 1 and simulate the circuit using Proteus (or another circuit
simulator). Q1 component is 2N3904 Silicon NPN Low Power High Frequency Bipolar
Transistor from BIPOLAR library.

Figure 1 Common Base Configuration

a. For input characteristics, simulate the circuit on Figure 1 record the 𝐼𝐸 and 𝑉𝐸𝐵 values
to Table 1 according to changing 𝑉𝐸𝐸 and 𝑉𝐶𝐶. Comment on results.

Table 1 Input Characteristics


𝑉𝐸𝐸 𝑉𝐶𝐶 = 0𝑉 𝑉𝐶𝐶 = 5𝑉 𝑉𝐶𝐶 = 15𝑉
𝐼𝐸 𝑉𝐸𝐵 𝐼𝐸 𝑉𝐸𝐵 𝐼𝐸 𝑉𝐸𝐵
0V 0 0 0 0.05uV 0uA 0.20uV
5V 0.43mA - 0.65V 1.56uA -4.57V 0.44mA - 0.65V
12V 1.13mA -0.73V 4.24uA -3.87V 1.13mA -0.67V
The input characteristics table demonstrates that as the emitter-to-base voltage Vee
increases, the emitter current Ie rises linearly, while the emitter-to-base voltage Veb
experiences a negative shift. However, variations in collector voltage Vcc have minimal
effect on Ie and Veb except for a discrepancy in Veb values at Vcc=5V which may be due
to measurement or simulation errors. Overall, the circuit exhibits expected behavior, with
Ie showing a clear dependence on Vee while Veb remains relatively stable across different
Vcc settings.
b. For output characteristics, simulate the circuit on Figure 1 record the 𝐼𝐶 and 𝑉𝐶𝐵 values
to Table 2 according to changing 𝐼𝐸 and 𝑉𝐶𝐶. Comment on results.

Table 2 Output Characteristics


𝑉𝐶𝐶 𝐼𝐸 = 0𝑚𝐴 𝐼𝐸 = 1𝑚𝐴 𝐼𝐸 = 2𝑚𝐴
𝐼𝐶 𝑉𝐶𝐵 𝐼𝐶 𝑉𝐶𝐵 𝐼𝐶 𝑉𝐶𝐵
0V 0 0 -0.68mA - 0.04V -0.78mA -0.03V
5V 0 5V - 1mA 4.67V -1.99mA 3.70V
12V 0 12V -1mA 11.7V -1.99mA 10.7V
20V 0 20V - 1mA 19.7V -2mA 18.7V
The output characteristics table depicts the circuit's response to varying collector-to-
emitter currents Ie and collector voltages Vcc .Notably, the collector current Icc remains
nearly constant around -1mA regardless of changes in Ie or Vcc. Additionally, the
collector-to-base voltage Vcb displays minor fluctuations but no distinct trend with
varying Vcc. Overall, these results indicate stable transistor behavior with Ic maintaining
consistency relative to Ie and minimal impact from changes in Vcc on Vcb.
c. Plot input and output characteristics of the circuit on Figure 1 for 𝑉𝐸𝐸 = 12𝑉 and
𝑉𝐶𝐶 = 15𝑉.

Common-Emitter Configuration

6. Draw the input characteristics curve (𝐼𝐸 − 𝑉𝐸𝐶) for a typical transistor taking three
different VCE values.
7. Draw the output characteristics curve (IB-VBC) for a typical transistor taking three
different emitter currents. Indicate the cut off, active and saturation regions on the
curve.

8. Explain how voltage and current gains are calculated, and operation of the emiiter
follower.
Answer: Voltage gain is the ratio of the change in output voltage to the

change in input voltage .It's calculated as Current gain represents

the ratio of the change in output current to the change in input current ,often

denoted as typically referred to as the DC current gain .

The emitter follower is a transistor configuration where the output voltage follows the
input voltage, minus a small voltage drop. It provides unity voltage gain and high input
impedance. This configuration isolates the input and output circuits, making it suitable for
impedance matching and buffering applications.
9. Consider the circuit of Figure 2 and simulate the circuit using Proteus (or another
circuit simulator). Q1 component is 2N3904 Silicon NPN Low Power High Frequency
Bipolar Transistor from BIPOLAR library.

Figure 2 Common EMİTTER Configuration


a. For input characteristics, simulate the circuit on Figure 2 record the 𝐼𝐵 and 𝑉𝐶𝐵
values to Table 3 according to changing 𝑉𝐵𝐵 and 𝑉𝐶𝐶. Comment on results.

Table 3 Input Characteristics


𝑉𝐵𝐵 𝑉𝐶𝐸 = 0𝑉 𝑉𝐶𝐸 = 1𝑉 𝑉𝐶𝐸 = 2𝑉
𝐼𝐵 𝑉𝐶𝐵 𝐼𝐵 𝑉𝐶𝐵 𝐼𝐵 𝑉𝐶𝐵
0V 0 mA 0 mA 0mA 1V 0mA 2V
5V 0.04mA 0.62V 0.01Ma 0.30V 0.01mA 1.29V
12V 0.11mA 0.66V 0.03mA 0.28V 0.03mA 1.27V
20V 0.19mA 0.68V 0.03mA 0.25V 0.06mA 1.25V
The input characteristics of the circuit show that as the base voltage Vbb or the collector
supply voltage Vcc increases, the base current Ib tends to rise while the collector-to-base
voltage Cb decreases. This behavior is consistent with the typical operation of a BJT
transistor in the active region, where higher base currents lead to increased collector
currents and decreased collector-to-base voltages. Overall, the trends observed indicate a
more effective transistor operation with higher input voltages.

b. For output characteristics, simulate the circuit on Figure 2 record the 𝐼𝐸 and 𝑉𝐶𝐸
values to Table 4 according to changing 𝐼𝐵 and 𝑉𝐶𝐶. Comment on results.

Table 4 Output Characteristics


𝑉𝐶𝐶 𝐼𝐵 = 0µ𝐴 𝐼𝐵 = 10µ𝐴 𝐼𝐵 = 100µ𝐴
𝐼𝐸 𝑉𝐶𝐸 𝐼𝐸 𝑉𝐶𝐸 𝐼𝐸 𝑉𝐶𝐸
0V 0 0 0 0.41mV 0
3.11mV
5V 0.05 0.20uV 0.05uA 0.41mV 0.05uA
3.11mV
12V 0.12mA 3uV 0.12uA 0.41mV 0.12uA
3.11mV
20V 0.20 6.20uV 0.20Ua 0.41mV 0.20uA
3.11mV
The output characteristics table reveals that as the base current Ib increases, both the
emitter current Ie and collector current rise accordingly, while the collector-to-emitter
voltage Vce remains relatively constant. Similarly, varying the collector-to-emitter voltage
Vcc doesn't significantly affect Ie or Vce, indicating stable transistor behavior. These
observations align with the expected behavior of a transistor operating in the active region,
where changes in base current control the transistor's amplification while Vce stays
relatively constant due to saturation properties.

c. Plot input and output characteristics of the circuit on Figure 2 for 𝑉𝐵𝐵 = 12𝑉 and
𝑉𝐶𝐶 = 15𝑉.

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